0.4-ghzto 4-ghzquadrature modulator

GND

RF_OUT

15

14

13

RGE PACKAGE(TOP VIEW)

VC

C

GN

D

BB

IN

BB

IP

GN

D

GN

D

24

23

22

21

20

19

GND

1

2

3LOP

4LON

5GND

GN

D

7 8 9B

BQ

N

10 11

BB

QP

GN

D

12

GN

D

18 VCC

17 GND

16

NC

NC

NC

NC

NC

P0024-04

6

TRF370317

www.ti.com SLWS209B –MARCH 2008–REVISED JANUARY 2010

0.4-GHz TO 4-GHz QUADRATURE MODULATORCheck for Samples: TRF370317

1FEATURES APPLICATIONS• Cellular Base Station Transceiver

2• 76-dBc Single-Carrier WCDMA ACPR at –8dBm Channel Power • CDMA: IS95, UMTS, CDMA2000, TD-SCDMA

• TDMA: GSM, IS-136, EDGE/UWC-136• Low Noise Floor: –163 dBm/Hz• Multicarrier GSM• OIP3 of 26.5 dBm• WiMAX: 802.16d/e• P1dB of 12 dBm• 3GPP: LTE• Unadjusted Carrier Feedthrough of –40 dBm• Wireless MAN Wideband Transceivers• Unadjusted Side-Band Suppression of –45 dBc

• Single Supply: 4.5-V–5.5-V Operation• Silicon Germanium Technology• 1.7-V CM at I, Q Baseband Inputs

DESCRIPTIONThe TRF370317 is a low-noise direct quadrature modulator, capable of converting complex modulated signalsfrom baseband or IF directly up to RF. The TRF370317 is a high-performance, superior-linearity device that isideal to RF frequencies of 400 MHz through 4 GHz. The modulator is implemented as a double-balanced mixer.The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving asingle-ended 50-Ω load without any need of external components. The TRF370317 requires a 1.7-Vcommon-mode voltage for optimum linearity performance.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Copyright © 2008–2010, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

http://focus.ti.com/docs/prod/folders/print/trf370317.html

https://commerce.ti.com/stores/servlet/SCSAMPLogon?storeId=10001&langId=-1&catalogId=10001&reLogonURL=SCSAMPLogon&URL=SCSAMPSBDResultDisplay&GPN1=trf370317

VC

C24

GN

D23

BB

IN22

BB

IP21

GN

D20

GN

D20

GN

D19

VCC18

GND17

RF_OUT16

15

14 GND

13

GN

D87

BB

QN

9

BB

QP

10

GN

D11

GN

D12

1

2GND

3LOP

4LON

GND 5

6

0/90

S

NC

NC

B0175-01

NC

NC

NC

TRF370317

SLWS209B –MARCH 2008–REVISED JANUARY 2010 www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be moresusceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

Functional Block Diagram

NOTE: NC = No connection

2 Submit Documentation Feedback Copyright © 2008–2010, Texas Instruments Incorporated

Product Folder Link(s): TRF370317


http://www.go-dsp.com/forms/techdoc/doc_feedback.htm?litnum=SLWS209BB&partnum=TRF370317


TRF370317


DEVICE INFORMATION

TERMINAL FUNCTIONSTERMINAL

I/O DESCRIPTIONNAME NO.

BBIN 22 I In-phase negative input

BBIP 21 I In-phase positive input

BBQN 9 I Quadrature-phase negative input

BBQP 10 I Quadrature-phase positive input

2, 5, 8,11,GND 12, 14, 17, – Ground

19, 20, 23

LON 4 I Local oscillator negative input

LOP 3 I Local oscillator positive input

1, 6, 7, 13,NC – No connect15

RF_OUT 16 O RF output

VCC 18, 24 – Power supply

ABSOLUTE MAXIMUM RATINGS (1)

over operating free-air temperature range (unless otherwise noted)

VALUE (2) UNIT

Supply voltage range –0.3 V to 6 V

TJ Operating virtual junction temperature range –40 to 150 °C

TA Operating ambient temperature range –40 to 85 °C

Tstg Storage temperature range –65 to 150 °C

Human body model (HBM) 75 VESD Electrostatic discharge ratings

Charged device model (CDM) 75 V

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under Recommended OperatingConditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

RECOMMENDED OPERATING CONDITIONSover operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

VCC Power-supply voltage 4.5 5 5.5 V

THERMAL CHARACTERISTICSPARAMETER TEST CONDITIONS VALUE UNIT

RqJA Thermal resistance, junction-to-ambient High-K board, still air 29.4 °C/W

RqJC Thermal resistance, junction-to-case 18.6 °C/W

Copyright © 2008–2010, Texas Instruments Incorporated Submit Documentation Feedback 3





TRF370317


ELECTRICAL CHARACTERISTICSover operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

DC Parameters

ICC Total supply current (1.7 V CM) TA = 25°C 205 245 mA

LO Input (50-Ω, Single-Ended)

LO frequency range 0.4 4 GHz

fLO LO input power –5 0 12 dBm

LO port return loss 15 dB

Baseband Inputs

VCM I and Q input dc common voltage 1.7

BW 1-dB input frequency bandwidth 350 MHz

Input impedance, resistance 5 kΩZI(single

Input impedance, parallelended) 3 pFcapacitance

ELECTRICAL CHARACTERISTICSover recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 400 MHz at 8 dBm, VinBB = 98mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)

RF Output Parameters


G Voltage gain Output rms voltage over input I (or Q) rms voltage –1.9 dB

P1dB Output compression point 11 dBm

IP3 Output IP3 fBB = 4.5, 5.5 MHz 24.5 dBm

IP2 Output IP2 fBB = 4.5, 5.5 MHz 68 dBm

Carrier feedthrough Unadjusted –38 dBm

Sideband suppression Unadjusted –40 dBc






TRF370317


ELECTRICAL CHARACTERISTICSover recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 945.6 MHz at 8 dBm, VinBB = 98mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)









Output return loss 9 dB

Output noise floor ≥13 MHz offset from fLO; Pout = –5 dBm –163 dBm/Hz

EVM Error vector magnitude (rms) 1 EDGE signal, Pout = –5 dBm (1) 0.64%

(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.











Output noise floor ≥13 MHz offset from fLO; Pout = –5 dBm –162 dBm/Hz


(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.






TRF370317







IP3 Output IP3 fBB = 4.5, 5.5 MHz 23.5 26.5 dBm





Output noise floor ≥13 MHz offset from fLO; Pout = –5 dBm –162.5 dBm/Hz


1 WCDMA signal; Pout = –8 dBm –74Adjacent-channel powerACPR (2) 2 WCDMA signals; Pout = –11 dBm per carrier –68 dBcratio

4 WCDMA signals; Pout = –14 dBm per carrier –67

1 WCDMA signal; Pout = –8 dBm –78Alternate-channel power 2 WCDMA signals; Pout = –11 dBm per carrier –72 dBcratio


(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.(2) Measured with DAC5687 as source generator










Output return loss 8.5 dB

Output noise floor ≥13 MHz offset from fLO ; Pout = –5 dBm –162.5 dBm/Hz

1 WCDMA signal; Pout = –8 dBm –72Adjacent-channel powerACPR (1) 2 WCDMA signal; Pout = –11 dBm per carrier –67 dBcratio


1 WCDMA signal; Pout = –8 dBm –78Alternate-channel power 2 WCDMA signal; Pout = –11 dBm –74 dBcratio


(1) Measured with DAC5687 as source generator






TRF370317











WiMAX 5-MHz carrier, Pout = –8 dBm, LO = 8 dBm –47 dBEVM Error vector magnitude (rms)

WiMAX 5-MHz carrier, Pout = 0 dBm, LO = 8 dBm –45 dB




G Voltage gain Output rms voltage over input I (or Q) rms voltage 0.6 dB

P1dB Output compression point 13.5 dBm





WiMAX 5-MHz carrier, Pout = –8 dBm, LO = 6 dBm –47 dBEVM Error vector magnitude (rms)

WiMAX 5-MHz carrier, Pout = 0 dBm, LO = 6 dBm –43 dB




G Voltage gain Output rms voltage over input I (or Q) rms voltage 0.2 dB











f − Frequency − MHz

−10

−9

−8

−7

−6

−5

−4

−3

−2

−1

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

PO

UT −

Out

put P

ower

− d

Bm

G002

–40°C

25°C

85°C

VIN = 98 mVrms SELO = 8 dBmVCC = 5 V

−20

−15

−10

−5

0

5

10

15

VBB − Baseband Voltage Single-Ended RMS − V

PO

UT −

Out

put P

ower

at 2

.14

GH

z −

dBm

0.01 0.1 1

G001


−10

−9

−8

−7

−6

−5

−4

−3

−2

−1

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

PO

UT −

Out

put P

ower

− d

Bm

G003

VIN = 98 mVrms SELO = 8 dBmTA = 25°C

4.5 V

5 V

5.5 V


−10

−9

−8

−7

−6

−5

−4

−3

−2

−1

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

PO

UT −

Out

put P

ower

− d

Bm

G004

VIN = 98 mVrms SEVCC = 5 VTA = 25°C

–5 dBm

8 dBm

0 dBm

TRF370317


TYPICAL CHARACTERISTICSVCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50

kHz (unless otherwise noted).

OUTPUT POWER OUTPUT POWERvs vs

BASEBAND VOLTAGE FREQUENCY AND TEMPERATURE

Figure 1. Figure 2.

OUTPUT POWER OUTPUT POWERvs vs

FREQUENCY AND SUPPLY VOLTAGE FREQUENCY AND LO POWER

Figure 3. Figure 4.







0

2

4

6

8

10

12

14

16

0 500 1000 1500 2000 2500 3000 3500 4000 4500

P1d

B −

dB

m

G005

85°C–40°C25°C

LO = 8 dBmVCC = 5 V


0

2

4

6

8

10

12

14

16

0 500 1000 1500 2000 2500 3000 3500 4000 4500

P1d

B −

dB

m

G006

4.5 V

LO = 8 dBmTA = 25°C

5.5 V

5 V


0

5

10

15

20

25

30

35

40

0 500 1000 1500 2000 2500 3000 3500 4000 4500

OIP

3 −

dBm

G008

fBB = 4.5, 5.5 MHzLO = 8 dBmVCC = 5 V

–40°C25°C

85°C


0

2

4

6

8

10

12

14

16

0 500 1000 1500 2000 2500 3000 3500 4000 4500

P1d

B −

dB

m

G007

–5 dBm

VCC = 5 VTA = 25°C

0 dBm

8 dBm

TRF370317


TYPICAL CHARACTERISTICS (continued)

VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50kHz (unless otherwise noted).

P1dB P1dBvs vs

FREQUENCY AND TEMPERATURE FREQUENCY AND SUPPLY VOLTAGE

Figure 5. Figure 6.

P1dB OIP3vs vs

FREQUENCY AND LO POWER FREQUENCY AND TEMPERATURE

Figure 7. Figure 8.







0

5

10

15

20

25

30

35

0 500 1000 1500 2000 2500 3000 3500 4000 4500

OIP

3 −

dBm

G009

5 V

fBB = 4.5, 5.5 MHzLO = 8 dBmTA = 25°C

4.5 V 5.5 V

0

5

10

15

20

25

30

35

0 500 1000 1500 2000 2500 3000 3500 4000 4500


OIP

3 −

dBm

G010

–5 dBm

fBB = 4.5, 5.5 MHzVCC = 5 VTA = 25°C

0 dBm

8 dBm


0

10

20

30

40

50

60

70

80

90

100

0 500 1000 1500 2000 2500 3000 3500 4000 4500

OIP

2 −

dBm

G011

fBB = 4.5, 5.5 MHzLO = 8 dBmVCC = 5 V

–40°C

25°C

85°C


0

10

20

30

40

50

60

70

80

90

100

0 500 1000 1500 2000 2500 3000 3500 4000 4500

OIP

2 −

dBm

G012

fBB = 4.5, 5.5 MHzLO = 8 dBmTA = 25°C

4.5 V

5.5 V

5 V

TRF370317




OIP3 OIP3vs vs


Figure 9. Figure 10.

OIP2 OIP2vs vs








0

10

20

30

40

50

60

70

80

90

100

0 500 1000 1500 2000 2500 3000 3500 4000 4500


OIP

2 −

dBm

G013

fBB = 4.5, 5.5 MHzVCC = 5 VTA = 25°C

0 dBm

8 dBm

–5 dBm


−60

−50

−40

−30

−20

−10

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

CS

− U

nadj

uste

d C

arrie

r F

eedt

hrou

gh −

dB

m

G014

LO = 8 dBmVCC = 5 V

–40°C

25°C

85°C


−60

−50

−40

−30

−20

−10

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

CS

− U

nadj

uste

d C

arrie

r F

eedt

hrou

gh −

dB

m

G016

VCC = 5 VTA = 25°C

–5 dBm

0 dBm

8 dBm


−60

−50

−40

−30

−20

−10

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

CS

− U

nadj

uste

d C

arrie

r F

eedt

hrou

gh −

dB

m

G015

LO = 8 dBmTA = 25°C

5.5 V

5 V4.5 V

TRF370317




OIP2 UNADJUSTED CARRIER FEEDTHROUGHvs vs



UNADJUSTED CARRIER FEEDTHROUGH UNADJUSTED CARRIER FEEDTHROUGHvs vs









−80

−70

−60

−50

−40

−30

−20

−10

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

SS

− U

nadj

uste

d S

ideb

and

Sup

pres

sion

− d

Bc

G017

LO = 8 dBmPOUT = −3 dBmVCC = 5 V

85°C

25°C

–40°C


−80

−70

−60

−50

−40

−30

−20

−10

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

SS

− U

nadj

uste

d S

ideb

and

Sup

pres

sion

− d

Bc

G018

LO = 8 dBmPOUT = −3 dBmTA = 25°C

5.5 V

5 V

4.5 V


−80

−70

−60

−50

−40

−30

−20

−10

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500

SS

− U

nadj

uste

d S

ideb

and

Sup

pres

sion

− d

Bc

G019

VCC = 5 VPOUT = −3 dBmTA = 25°C

–5 dBm

0 dBm

8 dBm

f − Frequency − GHz

−170

−168

−166

−164

−162

−160

−158

−156

−154

−152

−150

0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

Noi

se a

t 13-

MH

z O

ffset

− d

Bm

/Hz

G020

85°C

–40°C

25°C

VCC = 5 VLO = 8 dBmPOUT = −5 dBm

TRF370317




UNADJUSTED SIDEBAND SUPPRESSION UNADJUSTED SIDEBAND SUPPRESSIONvs vs



UNADJUSTED SIDEBAND SUPPRESSION NOISE AT 13-MHz OFFSET (dBm/Hz)vs vs








POUT − Output Power − dBm

−170

−168

−166

−164

−162

−160

−158

−156

−154

−152

−150

−10−9 −8 −7 −6 −5 −4 −3 −2 −1 0 1 2 3 4 5

Noi

se a

t 13-

MH

z O

ffset

− d

Bm

/Hz

G022

1960 MHz

LO = 8 dBmVCC = 5 V TA = 25°C

2140 MHz

f − Frequency − GHz

−170

−168

−166

−164

−162

−160

−158

−156

−154

−152

−150

0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

Noi

se a

t 13-

MH

z O

ffset

− d

Bm

/Hz

G021

5.5 V

5 V

LO = 8 dBmPOUT = −5 dBmTA = 25°C

4.5 V

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

0

900 920 940 960 980 1000


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G023

85°C

Adj at 942.6 MHzLO = 8 dBmVCC = 5 V

–40°C

25°C

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

0

1910 1930 1950 1970 1990 2010


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G024

85°C

Adj at 1960 MHzLO = 8 dBmVCC = 5 V

–40°C

25°C

TRF370317




NOISE AT 13-MHz OFFSET (dBm/Hz) NOISE AT 13-MHz OFFSET (dBm/Hz)vs vs

FREQUENCY AND SUPPLY VOLTAGE OUTPUT POWER


ADJUSTED CARRIER FEEDTHROUGH ADJUSTED CARRIER FEEDTHROUGHvs vs

FREQUENCY AND TEMPERATURE FREQUENCY AND TEMPERATURE







−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

0

2400 2440 2480 2520 2560 2600


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G026

85°C


–40°C

25°C

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

0

2090 2110 2130 2150 2170 2190


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G025

85°C


–40°C

25°C

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

0

3400 3440 3480 3520 3560 3600


CS

− A

djus

ted

Car

rier

Fee

dthr

ough

− d

Bm

G027

85°C


–40°C

25°C

−80

−70

−60

−50

−40

−30

−20

−10

0

900 920 940 960 980 1000


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G028

25°C

85°C

Adj at 942.6 MHzLO = 8 dBmPOUT = −3 dBmVCC = 5 V

–40°C

TRF370317




ADJUSTED CARRIER FEEDTHROUGH ADJUSTED CARRIER FEEDTHROUGHvs vs



ADJUSTED CARRIER FEEDTHROUGH ADJUSTED SIDEBAND SUPPRESSIONvs vs








−80

−70

−60

−50

−40

−30

−20

−10

0

1860 1900 1940 1980 2020 2060


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G029

85°C

Adj at 1960 MHzLO = 8 dBmPOUT = −3 dBmVCC = 5 V

–40°C 25°C

−80

−70

−60

−50

−40

−30

−20

−10

0

2040 2080 2120 2160 2200 2240


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G030

85°C


25°C

–40°C

−80

−70

−60

−50

−40

−30

−20

−10

0

2400 2440 2480 2520 2560 2600


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G031

85°C


25°C

–40°C

−80

−70

−60

−50

−40

−30

−20

−10

0

3400 3440 3480 3520 3560 3600


SS

− A

djus

ted

Sid

eban

d S

uppr

essi

on −

dB

c

G032

85°C


25°C

–40°C

TRF370317




ADJUSTED SIDEBAND SUPPRESSION ADJUSTED SIDEBAND SUPPRESSIONvs vs



ADJUSTED SIDEBAND SUPPRESSION ADJUSTED SIDEBAND SUPPRESSIONvs vs








0

5

10

15

20

25

30

35

1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9

VCM − Common-Mode Voltage − V

OIP

3 −

dBm

G033

1960 MHz


2141 MHz

0

10

20

30

40

50

60

70

80

90

1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9

VCM − Common-Mode Voltage − V

OIP

2 −

dBm

G034

1960 MHz


2141 MHz


−90

−87

−84

−81

−78

−75

−72

−69

−66

−63

−60

−20 −18 −16 −14 −12 −10 −8 −6 −4

AC

PR

− A

djac

ent C

hann

el P

ower

Rat

io −

dB

c

G042

ADJ

ALT

Notes: 1. Using TTE’s LE7640T-2.2M-50-720A LPF on Baseband inputs2. Using TI’s DAC5687 as a source generator

Single Carrier, 2140 MHz


−90

−87

−84

−81

−78

−75

−72

−69

−66

−63

−60

−20 −18 −16 −14 −12 −10 −8 −6 −4

AC

PR

− A

djac

ent C

hann

el P

ower

Rat

io −

dB

c

G041

ADJ

ALT

Notes: 1. Using TTE’s LE7640T-2.2M-50-720A LPF on Baseband inputs2. Using TI’s DAC5687 as a source generator

Single Carrier, 1960 MHz

TRF370317




OIP3 OIP2vs vs

COMMON-MODE VOLTAGE COMMON-MODE VOLTAGE


ADJACENT CHANNEL POWER RATIO ADJACENT CHANNEL POWER RATIOvs vs

OUTPUT POWER OUTPUT POWER







OIP2 − dBm

0

5

10

15

20

25

56 58 60 62 64 66 68 70 72

Dis

trib

utio

n −

%

G037OIP3 − dBm

0

10

20

30

40

50

60

24 25 26 27 28 29

Dis

trib

utio

n −

%

G036

SS − Unadjusted Sideband Suppression − dBc

0

5

10

15

20

25

30

−36 −40 −44 −48 −52 −56 −60 −64 −68 −72 −76

Dis

trib

utio

n −

%

G039CS − Unadjusted Carrier Feedthrough − dBm

0

2

4

6

8

10

12

14

16

18

−24 −28 −32 −36 −40 −44 −48 −52 −56 −60 −64

Dis

trib

utio

n −

%

G038

TRF370317




OIP3 at 1960 MHz DISTRIBUTION OIP2 at 1960 MHz DISTRIBUTION


UNADJUSTED CARRIER FEEDTHROUGH UNADJUSTED SIDEBAND SUPPRESSIONat 1960 MHz DISTRIBUTION at 1960 MHz DISTRIBUTION







P1dB − dBm

0

5

10

15

20

25

30

35

11.4 11.6 11.8 12 12.2 12.4

Dis

trib

utio

n −

%

G040

TRF370317




P1dB at 1800 MHz DISTRIBUTION

Figure 41.

APPLICATION INFORMATION AND EVALUATION BOARD

Basic Connections• See Figure 42 for proper connection of the TRF3703 modulator.• Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown

on pins 4, 5, 6, and 7.• Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.• Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).

This should be ac-coupled through a 100-pF capacitor.• Terminate the ac-coupled LON with 50 Ω to GND.• Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.• The differential baseband inputs should be set to the proper common-mode voltage of 1.7V.• RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This

pin should also be ac-coupled through a 100-pF capacitor.• All NC pins can be left floating.

ESD Sensitivity

RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devicesshould be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the ratedlevel. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board(PCB). Follow these guidelines for optimal ESD protection:• Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore,

customers’ ESD precautions should be consistent with these ratings.• The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly

connect the device pins to off-board circuits.






SMA_END

SMA_END SMA_END

SMA_END

SMA_ENDSMA_END

SMA_END

+C6

4.7uF

+C6

4.7uF

R4

0

R4

0

C3 100pFC3 100pFU1

TRF3703

U1

TRF3703

NC11

GND12

LOP3

LON4

GND25

NC26

NC

37

GN

D3

8

BB

QN

9

BB

QP

10

GN

D4

11

GN

D5

12

NC4 13GND6 14

NC5 15RF_OUT 16

GND7 17VCC1 18

GN

D8

19

GN

D9

20

BB

IP2

1B

BIN

22

GN

D1

02

3V

CC

22

4G

ND

25

R3

0

R3

0

C5

1000pF

C5

1000pF

J1LOP

J1LOP

1

2 3 4 5

C15

5pF

DNI

C15

5pF

DNI

C10

.1uF

DNI C10

.1uF

DNI

R2

0

R2

0

J3BBINJ3

BBIN

1

2 3 4 5

C13

.1uF

DNI

C13

.1uF

DNI

C14

5pF

DNI

C14

5pF

DNI

C12

.1uF

DNI

C12

.1uF

DNI

J5QNJ5QN

1

2 3 4 5

W12POS JUMPER

W12POS JUMPER

12

J7

RF_OUT

J7

RF_OUT

1

2345

W22POS JUMPER

W22POS JUMPER

1 2

C9

1uFDNI

C9

1uFDNI

C8

1uF

DNI

C8

1uF

DNI

C1 100pFC1 100pF

+C7

4.7uF

+C7

4.7uF

J2

LON

J2

LON

1

2 3 4 5

J4

BBIP

J4

BBIP

1

2345

J6QPJ6QP

1

2345

C2 100pFC2 100pF

R1 0R1 0

C11

.1uF

DNI C11

.1uF

DNI

R5

0

R5

0

C4

1000pF

C4

1000pF

S0214-02

TRF370317


NOTE: DNI = Do not install.

Figure 42. TRF3703 EVM Schematic






K001

TRF370317


Figure 43 shows the top view of the TRF3703 EVM board.

Figure 43. TRF3703 EVM Board Layout






16

DAC5687

16

CLK1

RF_OUT

VCXO

Ref Osc

CLK2

CDCM7005Clock Gen

TRF3761PLL

LO Generator

TRF3703I/Q

Modulator

B0176-01

TRF370317


Table 1. Bill of Materials for TRF3703 EVM

Item PartQuantity Value PCB Footprint Mfr Name Mfr Part Number NoteNumber Reference

1 3 C1, C2, C3 100 pF 0402 Panasonic ECJ-0EC1H101J

2 2 C4, C5 1000 pF 0402 Panasonic ECJ-0VC1H102J

3 2 C6, C7 4.7 mF TANT_A KEMET T491A475K016AS

4 0 C8, C9 1 mF 0402 Panasonic ECJ-0EC1H010C_DNI DNI (1)

5 0 C10, C11, 0.1 mF 0402 Panasonic ECJ-0EB1A104K_DNI DNI (1)

C12, C13

6 0 C14, C15 5 pF 0402 Panasonic ECJ-0EC1H050C_DNI DNI (1)

7 7 J1, J2, J3, LOP SMA_SMEL_250x215 Johnson 142-0711-821J4, J5, J6, ComponentsJ7

8 1 R1 0 0402 Panasonic ERJ-2GE0R00X

9 4 R2, R3, R4, 0 0402 Panasonic ERJ-2GE0R00R5

10 1 U1 TRF3703 QFN_24_163x163_0p50m TI TRF370317m

11 2 W1, W2 Jumper_1x2_t HDR_THVT_1x2_100 Samtec HTSW-150-07-L-Shvt

(1) DNI = Do not install.

GSM Applications

The TRF370317 is suited for GSM and multicarrier GSM applications because of its high linearity and low noiselevel over the entire recommended operating range. It also has excellent EVM performance, which makes it idealfor the stringent GSM/EDGE applications.

WCDMA Applications

The TRF370317 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR)and noise density are critically important. Using Texas instruments’ DAC568X series of high-performancedigital-to-analog converters as depicted in Figure 44, excellent ACPR levels were measured with one-, two-, andfour-WCDMA carriers. See Electrical Characteristics, fLO = 1960 MHz and fLO = 2140 MHz for exact ACPRvalues.

Figure 44. Typical Transmit Setup Block Diagram






R1

R2

R3Id

DAC568x TRF370x

It

Vdd

3.3V

1.7V

Vee

Vdd

R1

R2

R3Id

It

DAC56x2 TRF370x

1.7V

0.7V

Topology 1: DAC Vcm > TRF370x Vcm

Topology 2: DAC Vcm < TRF370x Vcm

S0338-01

TRF370317


DAC-to-Modulator Interface Network

For optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with themodulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit isused to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passivecircuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep theinsertion loss as low as possible to achieve the best dynamic range. Figure 45 shows the passive interconnectcircuit for two different topologies. One topology is used when the DAC (e.g., DAC568x) common mode is largerthan the modulator. The voltage Vee is nominally set to ground, but can be set to a negative voltage to reduce theinsertion loss of the network. The second topology is used when the DAC (e.g., DAC56x2) common mode issmaller than the modulator. Note that this passive interconnect circuit is duplicated for each of the differential I/Qbranches.

Figure 45. Passive DAC-to-Modulator Interface Network

Table 2. DAC-to-Modulator Interface Network Values

Topology 1Topology 2

With Vee = 0 V With Vee = –5 V

DAC Vcm [V] 3.3 3.3 0.7

TRF370x Vcm [V] 1.7 1.7 1.7

Vdd [V] 5 5 5

Vee [V] Gnd –5 N/A

R1 [Ω] 66 56 960

R2 [Ω] 100 80 290

R3 [Ω] 108 336 52

Insertion loss [dB] 5.8 1.9 2.3







−50

−45

−40

−35

−30

−25

−20

1700 1900 2100 2300 2500 2700

Car

rier

Sup

pres

sion

− d

Bm

G035

With BB RC Filter

Without BB RC Filter

TRF370317


DEFINITION OF SPECIFICATIONS

Unadjusted Carrier Feedthrough

This specification measures the amount by which the local oscillator component is suppressed in the outputspectrum of the modulator. If the common mode voltage at each of the baseband inputs is exactly the same andthere was no dc imbalance introduced by the modulator, the LO component would be naturally suppressed. DCoffset imbalances in the device allow some of the LO component to feed through to the output. Because thisphenomenon is independent of the RF output power and the injected LO input power, the parameter isexpressed in absolute power, dBm.

Some improvement to the unadjusted carrier suppression in a localized band is possible by introducing a simpleRF filter in the baseband I/Q paths. The filter topology is a series resistor followed by a shunt capacitor. Forexample, using a series 50-Ω resistor (R2, R3, R4, R5 = 50 Ω) followed by a shunt 4.7-pF capacitor (C10, C11,C12, C13 = 4.7 pF) yields unadjusted carrier suppression improvement around the 2-GHz band. Figure 46 showsthe performance improvement for that filter configuration.

Figure 46. Carrier Suppression Improvement With RC Filter

Adjusted (Optimized) Carrier Feedthrough

This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjustedaround their theoretical value of VCM to yield the maximum suppression of the LO component in the outputspectrum. This is measured in dBm.

Unadjusted Sideband Suppression

This specification measures the amount by which the unwanted sideband of the input signal is suppressed in theoutput of the modulator, relative to the wanted sideband. If the amplitude and phase within the I and Q branch ofthe modulator were perfectly matched, the unwanted sideband (or image) would be naturally suppressed.Amplitude and phase imbalance in the I and Q branches results in the increase of the unwanted sideband. Thisparameter is measured in dBc relative to the desired sideband.

Adjusted (Optimized) Sideband Suppression

This differs from the unadjusted sideband suppression in that the gain and phase of the baseband inputs areiteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This ismeasured in dBc.






f

f

fn

f

f

LO

LSBn

BBn

3rdH/L

2ndH/L

BBn

BBn

BBn

BBn

BBn

BBn

rd

rd

rd

rd

rd

rd

3

2

rd

nd

= Baseband Frequency

= RF Frequency

= 3 Order Intermodulation Product Frequency (High Side/Low Side)

= 2 Order

rd

ndIntermodulation Product (High Side/Low Side)

= Local Oscillator Frequency

= Lower Sideband Frequency

BBn

rd

BBn

BBn

BBn

BBn

BBn

rd

rd

rd

rd

rd

Unw

ante

d Sideb

and

2

Ord

er IM

nd 3Ord

er IM

rd

Des

ired

Signa

l

LSB2 = LO

–fBB2

LSB1 = LO

–fBB1

LO f

= (f

–f

) + LO

2ndL

BB2

BB1

f

= 2f1–

f2

3rdL

f1 = f

+ LO

BB1

f2 = f

+ LO

BB2

f

= 2f2–

f1

3rdH

f

= (f

+ f

) + LO

2ndH

BB2

BB1

M0104-01

TRF370317


Suppressions Over Temperature

This specification assumes that the user has gone though the optimization process for the suppression inquestion, and set the optimal settings for the I, Q inputs. This specification then measures the suppression whentemperature conditions change after the initial calibration is done.

Figure 47 shows a simulated output and illustrates the respective definitions of various terms used in this datasheet.

Figure 47. Graphical Illustration of Common Terms






TRF370317


REVISION HISTORY

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (June, 2008) to Revision B Page

• Added electrostatic discharge parameters to Absolute Maximum Ratings table ................................................................. 3

• Added ESD Sensitivity section ........................................................................................................................................... 18

Changes from Original (March 2008) to Revision A Page

• Added ACPR graph to Typical Characteristics based on customers' requests .................................................................. 16

• Added ACPR graph to Typical Characteristics based on customers' requests .................................................................. 16






PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead finish/Ball material

(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TRF370317IRGER ACTIVE VQFN RGE 24 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF370317

TRF370317IRGET ACTIVE VQFN RGE 24 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF370317

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide basedflame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to twolines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

http://www.ti.com/product/TRF370317?CMP=conv-poasamples#samplebuy

http://www.ti.com/product/TRF370317?CMP=conv-poasamples#samplebuy

PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 2

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TRF370317IRGER VQFN RGE 24 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1

TRF370317IRGET VQFN RGE 24 250 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 22-Nov-2018

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TRF370317IRGER VQFN RGE 24 3000 367.0 367.0 38.0

TRF370317IRGET VQFN RGE 24 250 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

www.ti.com 22-Nov-2018

Pack Materials-Page 2

GENERIC PACKAGE VIEW

Images above are just a representation of the package family, actual package may vary.Refer to the product data sheet for package details.

RGE 24 VQFN - 1 mm max heightPLASTIC QUAD FLATPACK - NO LEAD

4204104/H

www.ti.com

PACKAGE OUTLINE

C

SEE TERMINALDETAIL

24X 0.30.2

2.45 0.1

24X 0.50.3

1 MAX

(0.2) TYP

0.050.00

20X 0.5

2X2.5

2X 2.5

A 4.13.9

B

4.13.9

0.30.2

0.50.3

VQFN - 1 mm max heightRGE0024BPLASTIC QUAD FLATPACK - NO LEAD

4219013/A 05/2017

PIN 1 INDEX AREA

0.08 C

SEATING PLANE

1

6 13

18

7 12

24 19

(OPTIONAL)PIN 1 ID

0.1 C A B0.05

EXPOSEDTHERMAL PAD

25 SYMM

SYMM

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

SCALE 3.000

DETAILOPTIONAL TERMINAL

TYPICAL

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MINALL AROUND

0.07 MAXALL AROUND

24X (0.25)

24X (0.6)

( 0.2) TYPVIA

20X (0.5)

(3.8)

(3.8)

( 2.45)

(R0.05)TYP

(0.975) TYP


4219013/A 05/2017

SYMM

1

6

7 12

13

18

1924

SYMM

LAND PATTERN EXAMPLEEXPOSED METAL SHOWN

SCALE:15X

NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented.

25

SOLDER MASKOPENING

METAL UNDERSOLDER MASK

SOLDER MASKDEFINED

EXPOSEDMETAL

METAL

SOLDER MASKOPENING

SOLDER MASK DETAILS

NON SOLDER MASKDEFINED

(PREFERRED)

EXPOSEDMETAL

www.ti.com

EXAMPLE STENCIL DESIGN

24X (0.6)

24X (0.25)

20X (0.5)

(3.8)

(3.8)

4X ( 1.08)

(0.64)TYP

(0.64) TYP

(R0.05) TYP


4219013/A 05/2017

NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations.

25

SYMM

METALTYP

SOLDER PASTE EXAMPLEBASED ON 0.125 mm THICK STENCIL

EXPOSED PAD 25

78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGESCALE:20X

SYMM

1

6

7 12

13

18

1924

IMPORTANT NOTICE AND DISCLAIMER

TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources.TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products.

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright © 2020, Texas Instruments Incorporated

http://www.ti.com/legal/termsofsale.html

http://www.ti.com

0.4-ghzto 4-ghzquadrature modulator

Documents