CVD

rGmrHm -TrSm rGmTp0 rGmTp0 rGmTp0

3.1CVDChemical Vapor DepositionCVD (GaAs)(GaAs1-xPx)

CVD()CVD

HgS 1000500 2060John M. Blocher Jr.( Sir CVD) CVD

CVD

/CVDCVD

CVD(HP-CVD)(LP-CVD) (P-CVD) (L-CVD) (MO-CVD)(HT-CVD) (MT-CVD) (LT-CVD)CVD

3.1.1 CVD M-H

CVD M-CC-C[E(M-C)E(C-C)]E(MO)E(OC)MOCVD (Metal-Organic CVD)(M-C)(M-C)---

MOCVD

CVD

CVD ()

Fe2O3

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3.1.2 CVD .

(99)

-GaN

7:2:170%2006180001000500-700

50-51(MCVD)(OVPO)(VAD)(PCVD)

3.1.3 CVD ,() 53 ZnSe

CVD (T2)()ZnSI2ZnI2(T1)()ZnS

CVDCVD1234

CVD1 5001200

CVD2 5001200

CVD31200

CVD4500

CVD5 1000

CVD laser-assisted CVD CVDCVDCVDCVD

CVD SiSiCSiNTiNGaNGaAsTiO2TaO5

CVD (catalytic CVD) catalytic cracking reaction SiCSiC< 300

ECVD ECVD< 1kPa> 1000

1CVD

2EVDH2O

MW-PCVD MW-PCVDSOD

Fabrication of well-aligned CdS nanotubes byCVD-template methodXiao-Ping Shena, Ai-Hua Yuanb, Fei Wanga, Jian-Ming Hongc, Zheng Xua,*a State Key Laboratory of Coordination Chemistry, Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, P. R. Chinab School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, P. R. Chinac Center for Materials Analysis, Nanjing University, Nanjing 210093, P. R. ChinaSolid State Communications 133 (2005) 1922

Abstract:Well-aligned CdS nanotubes have been synthesized within the nanochannels of the porous anodic alumina (PAA) membranes by pyrolyzing cadmium bis(diethyldithiocarbamate) [Cd(S2CNEt2)2] at 400 oC. The nanotubes are composed of pure hexagonal phase polycrystalline CdS. The synthetic route can, in principle, be extended to fabricate other nanotubes of a wide range of semiconductors.Solid State Communications 133 (2005) 1922

Typical experimental:The Commercially available PAA membranes (Whatman Ltd., Anodisc 13) with a nominal pore diameter of 20 nm and thickness of 60 mm were used as templates. The synthesis of CdS nanotubes was carried out in a quartz tube mounted inside a horizontal tube furnace.Solid State Communications 133 (2005) 1922

In a typical experiment, the organometallic precursor (~300 mg) in a ceramic boat was placed at upstream end and the PAA template was placed vertically at the central high-temperature zone of the quartz tube. After evacuating the quartz tube to ~2 Torr, a carrier gas of high-purity N2 flowed via the precursor area toward the template to carry precursor into reaction zone.Solid State Communications 133 (2005) 1922

The gas flow rate and pressure inside the tube were kept respectively at 30 sccm and 20 Torr during the CVD. The system was then heated to 400 oC at the central region of the furnace at a rate of 20 oC min-1 and held at that temperature for 1 h for CVD. The precursor was situated in advance according to the temperature gradient from the center to the ends of the furnace so that its temperature could be held at about 220 oC.Solid State Communications 133 (2005) 1922

After deposition, the temperature of the template was raised to 500 oC at a rate of 2 oC min-1 and maintained for 4 h for annealing. The resulting template was collected after the furnace was cooled to room temperature. The cover layer on the surface of the resulting templates was removed by polishing with 1500 grid sand paper for further characterization.Solid State Communications 133 (2005) 1922

(a) Top-view of well-aligned CdS nanotubes after removing the surface cover layer. (b) Lateral view of CdS nanotube arrays.Solid State Communications 133 (2005) 1922