˘ˇ ˆ - ase kaohsiung powerpoint - asemtl buildup roadmap 2004 0531 author sha00179 created date...
TRANSCRIPT
Rev. 20040531A
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Rev. 20040531A
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Available Solutions
Category Items Available SolutionsMicro Via 48um, Staggered, StackedVOP Via on PTHPTH 100um, 150 umTenting 45/45 umSAP 20/20 umENIG Electroless Ni/AuSOP Solder on PadEntetic Low Alpha 63/27Leadfree Sn / Ag 3% / Cu 0.5%Core/Leadfree BT HL832LS
Core Halogen Free HL832NX, E679FGB
Dielectric/Leadfree ABF-SH9K
Dielectric/Halogen Free ABF-GX
Structure
Presolder
Material
Fine Pitch
Metal Finish
Rev. 20040531A
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Test Vehicle - FC Substrate SpecificationTest Vehicle - FC Substrate Specification
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Rev. 20040531A
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Stagger via
Stacked via
Via Pad
Via Pad
Via Drill Diameter
Via Pad Size
PTH Pad Size
Via, PTH, Line W/SVia, PTH, Line W/S
151518151820182025Build up
121515151518151820Necking
303540354040404050Core
Line W/S
150175180175180200180200300PTH Pad
707580758010080100150DiameterPTH
65758570801057085108Via Pad
353545404045404548Diameter
YYYYYYYYYStacked
YYYYYYYYYStagger
Via
5+N+55+N+54+N+44+N+44+N+43+N+34+N+43+N+33+N+3Structure
(N=Core Layer)
ProtoAdvancedNormalProtoAdvancedNormalProtoAdvancedNormal
200620052004Year
Flip-Chip IC Substrate Technology Roadmap I (Build-up)
Rev. 20040531A
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SROSRO Pad Size
BumppitchSR width
Bump Pitch
SRO, Bump & Metal FinishSRO, Bump & Metal Finish
max 15max 15max 15max 15max 15max 15max 15max 15max 15Co-planarity
Bump
Metal Finish Solder on Pad /ENIGSolder on Pad /ENIGSolder on Pad /ENIG
90100115100115135115135175Bump Pitch
21+/-821+/-821+/-821+/-821+/-821+/-821+/-821+/-825+/-10THK
707590759010090100130SRO Pad
404560456070607090SROSolder Resist
ProtoAdvancedNormalProtoAdvancedNormalProtoAdvancedNormal
200620052004Year
Flip-Chip IC Substrate Technology Roadmap II (Build-up)
Rev. 20040531A
������ ���������������� Qualification summaryQualification summaryPASS
Cutomer Structure Body Size Die Size Pre-con PCT TCT HAST HTST THT
125~ -55
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125~ -55
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130
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/85%RH 150
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pass 1000X 100hrs 1000hrs
125~ -55
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121
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/100%RH 125~ -55
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130
�
/85%RH 150
�
85
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/85%RH
pass 96hrs 1000X 100hrs 1000hrs 1000hrs
150 ~ -65
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121
�
/100%RH 125 ~ -55
�
130
�
/85%RH 150
�
85
�
/85%RH
pass 96hrs 1000X 100hrs 1000hrs 1000hrs
125~ -55
�
125 ~ -55
�
130
�
/85%RH 150
�
85
�
/85%RH220
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Reflowpass
1000X 100hrs 1000hrs 1000hrs
125~ -55
�
125 ~ -55
�
130
�
/85%RH 150
�
85
�
/85%RH260 �� �� Reflow
pass 1000X 100hrs 1000hrs 1000hrs
125~ -55
�
125 ~ -55
�
130�
/85%RH 150
�
85
�
/85%RH220
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Reflowpass 1000X 100hrs 1000hrs 1000hrs
125~ -55
�
125 ~ -55
�
130
�
/85%RH 150
�
85
�
/85%RH260 �� �� Reflow
pass1000X 100hrs 1000hrs 1000hrs
125~ -55
�
125~ -55�
130
�
/85%RH 150
�
85
�
/85%RH
pass 1000X 100hrs 100hrs 100hrs
125~ -55
�
125 ~ -40
�
130
�
/85%RH 150
�
pass 1000X 168hrs 1000hrs
125~ -55
�
125 ~ -55
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130
�
/85%RH
pass 1000X 168hrs
150~ -65
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150~-65
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130
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/100%RH 150
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pass 500X 96hrs 1000hrs35*35 9.93*6.17
37.5*37.5
40*40
14.5*14.5
Graphic
2+2+2
2+2+2
N/A
40*40 15.3*15.3
14.5*14.5
9.5*9.5 N/AChipSet 2+2+2
Test Vehicle 2+2+2
Graphic
N/A
2+2+2 40*40 14.5*14.5 N/A
40*40
Graphic
2+2+2 31*31 9.7*9.8
N/A3+2+3 10.92*10.85
N/A
2+2+2 31*31 9.7*9.8
40*40 14.5*14.5
N/A
N/A
Graphic
N/A N/AN/AGraphic 2+2+2 35*35 12*12
31*31
Graphic 2+2+2
ASIC 1+2+1
N/A
N/A
On-GoingCustomer Structure Body Size Die Size Pre-con PCT TCT HAST HTST THT
150~ -65�125~ -55
�
130
�
/85%RH 150
�
85
�
/85%RH
Pass 500X pass1000X on going
96hrs pass168hrs on going
500hrs pass1000hrs on going N/A
150~ -65
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121
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/100%RH 125~-55
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130
�
/100%RH 150
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pass 96hrs on going 500X on going 96hrs pass 500hrs passN/AGraphic 2+2+2 37.5*37.5
N/AGraphic 2+2+2 35*35
N/A
Rev. 20040531A
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L/S = 18/12 um
Plating+ Flash Etching
Dry film Adhesion 12um
After Developing
L/S = 15/15 um
After Pretreatment
� Risk:
1.Line edge roughness : Change Film AW to Glass AW .
2.Stripping problem: Modify Stripping machine with add high-pressure set.
Decrease E'less roughness Rz from 10um to 6um
-->Change ABF SH-9K to GX type and modify desmear parameter
Fine Line Technology
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Rev. 20040531A
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2004 Advanced
150um Bump Pitch
2003 HVM
200um Bump Pitch
After Reflow
After Coining
Fine Pitch Technology
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Rev. 20040531A
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2+N structure
One-Side Buildup
2+2+2 structure
Normal Buildup
Advantage:
1.Reduce buildup layer
2.Cost Saving
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New build-up technology
Rev. 20040531A
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60um SRO (Mask design)50um SRO (Mask design)
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Capability Analysis
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35
36
1 2 3 4 5 6
40
50
1 2 3 4 5 6
Rev. 20040531A
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X-section 100X
Lead Free
X-section 500X
Lead Free
Top View
Lead Free
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Capability Analysis
Rev. 20040531A
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Thin Core FC-BGA Capability
50/5090/100Core Layer LW/S
23.75*31.9mm35*35mmPackage Size
250um700umTotal Thickness
40/4030/30Build-up Layer LW/S
PP (60um)ABF (35um)Build-up Dielectric
T CompanyV CompanyCustomer
BT (0.06mm)BT (0.4mm)Core
SR7000SR7000SM
200um215umBump Pitch
StripUnitShipping Type
1+2+11+2+1Layer Structure
Laminate- FCSAP-FCType