© electronics ece 1231 chapter 6 the field effect transistor

© Electronics© Electronics ECE 1231ECE 1231

Chapter 6The Field Effect Transistor


MOSFETs vs BJTsBJTs•Three different currents in the device: IC, IB and IE

•Consume a lot of power•Large size device

MOSFETs•Mostly widely used today •Low power•Very small device (nm)•Simple manufacturing process•Only 1 current, ID


MOS Field Effect TransistorMOS Field Effect Transistor

In the MOSFET, the current is controlled by an electric field applied perpendicular to both the semiconductor surface and to the direction of current.

The phenomenon is called the field effect.

The basic transistor principle is that the voltage between two terminals, provides the electric field, and controls the current through the third terminal.

metal

oxide

substrate


Two-Terminal MOS StructureTwo-Terminal MOS Structure

A MOS capacitor with a p-type semiconductor substrate: the top metal terminal, called the gate, is at a negative voltage with respect to the substrate.

A negative charge will exist on the top metal plate and an electric field will be induced.

If the electric field penetratesthe semiconductor, the holes in the p-type semiconductor will experience a force toward the oxide-semiconductor interface and an accumulation layer of holes will exist.



The same MOS capacitor, but with the polarity of the applied voltage reversed.

A positive charge now exists on the topmetal plate and the induced electric field is in the opposite direction.

If the electric field penetrates the semiconductor, holes in the p-type material will experience a force away from the oxide-semiconductor interface.



As the holes are pushed away from the interface, a negative space-charge region is created.

This region of minority carrier electrons is called an electron inversion layer.

The magnitude of the charge in the inversion layer is a function of the applied gate voltage, hence the larger voltage is applied, the wider it becomes


n-Channel Enhancement-Mode MOSFETn-Channel Enhancement-Mode MOSFET

● Transistor Structure

The gate, oxide, and p-type substrate are the same as those of a MOS capacitor.

There are two n-regions, called the source and drain terminal.

The current in a MOSFET is the result of the flow of charge in the inversion layer, called the channel region, adjacent to the oxide-semiconductor interface.

A simplified cross section of a MOSFET with channel length L and channel width W


n-Channel Enhancement-Mode MOSFETn-Channel Enhancement-Mode MOSFET

If a large enough positive voltage gate voltage is applied, an electron inversion layer connects the n-source to the n-drain.

A current can then be generated between the source and drain terminals.

Since a voltage must be applied to the gate to create the inversion charge, this transistor is called an enhancemode MOSFET.

Since the carriers in the inversion layer are electrons, this device is called an n-channel MOSFET (NMOS).


Ideal MOSFET Current-Voltage Ideal MOSFET Current-Voltage

Characteristics – NMOS DeviceCharacteristics – NMOS Device

The threshold voltage of the n-channel MOSFET, denoted as VTH or VTN, is defined as the applied gate voltage needed to create an inversion charge.

If the VGS < VTN, the current in the device is essentially zero.

If the VGS > VTN, a drain-to-source current, ID is generated as an induced electron inversion layer / channel is created




A positive drain voltage creates a reverse-biased drain-to-substrate pn junction, depletion region width increases

At the drain end, the inversion layer bridges the depletion region, providing a path for the current to flow.

So current flows through the channel region, not through a pn junction.

holes experience force same direction of electric field, leaving an electron inversion layer

Direction of Electric field




When vGS < VTN, the drain current is zero.

When vGS > VTN, the channel inversion charge is formed and the drain current increases with vDS.

With a larger gate voltage, a larger inversion charge density is created, and the drain current is greater for a given value of vDS.

● The iD versus vDS characteristics for small values of vDS.




● In the basic MOS structure for vGS > VTN with a small vDS:

The thickness of the inversion channel layer qualitatively indicates the relative charge density.

Which for this case is essentially constant along the entire channel length.


VGS

VDS

S G D

- - - - - - - - - - - - - - - - - - - - - - - - -

+-

+-

VGS = VG – VS

VGD = VG – VD

But VGD = VGS – VDS

= VG – VS – VD +VS

So, if VDS is small, VGD VGS, we have approximately equal distribution of channel inversion layer




When the drain voltage vDS

increases, the voltage drop across the oxide near the drain terminal decreases – no longer uniform distribution.

It means that the induced inversion charge density near the drain also decreases.

It causes the slope of the iD versus vDS curve to decrease.

VGD = VGS – VDS


As VDS increases, the channel at the drain end reaches the pinch-off point and the value of VDS that causes the channel to reach this point is called saturation voltage VDSsat

VGD = VGS – VDS sat


At the pinch off point, VGD = VTN

VGD = VGS – VDS sat

VTN = VGS – VDS sat

Hence,

VDSsat = VGS - VTN



Characteristics – NMOS DeviceCharacteristics – NMOS Device When vDS becomes larger than vDS(sat),

the point in the channel at which the inversion charge is just zero moves toward the source terminal.

In the ideal MOSFET, the drain current is constant for vDS > vDS(sat).

This region of the iD versus vDS characteristic is referred to as the saturation region.

The electrons travel through the channel towards the drain but then they are swept by the electric field to the drain contact




The region for which vDS < vDS(sat) is known as the nonsaturation or triode region.

The ideal current-voltage characteristics in this region are described by the equation:

, Kn = conduction parameter




In the saturation region, the ideal current-voltage characteristics for the vGS > VTN are described by the equation:

where

μn = mobility of electrons.

and

Cox = oxide capacitance per unit area.

Can be written in the form: where k′n = μnCox


LIST OF FORMULAS: NMOSTRIODE OR NON-SATURATION REGION

SATURATION REGION

μn = mobility of electrons and Cox = oxide capacitance per unit area.

Where

or


Circuit Symbols and ConventionsCircuit Symbols and Conventions – NMOS enhancement mode

FET is a voltage controlled device meaning the voltage VGS determines the current flowing, ID


● Transistor Structure

The substrate is now n-type and source and drain areas are p-type.

The channel length, channel width, and oxide thickness parameter definitions are the same as those for NMOS device.

Cross section of p-channel enhancement-mode MOSFET

PMOS enhancement mode


● Basic MOSFET Operation

The operation of the p-channel device is the same as that of the n-channel device.

Except the hole is the charge carriers rather than the electron.

A negative gate bias is required to induce an inversion layer of holes in the channel region directly under the oxide.

Electrons experience force opposite direction of electric field, leaving a hole inversion layer

Direction of Electric Field


The threshold voltage for the p-channel device is denoted as VTP.

Since the threshold voltage is defined as the gate voltage required to induce the inversion layer, VTP < 0 for the p-channel enhancement-mode device.

Once the inversion layer has been created, the p-type source region is the source of the charge carrier so that holes flow from the source to drain.


Ideal MOSFET Current-Voltage Characteristics – PMOS DeviceIdeal MOSFET Current-Voltage Characteristics – PMOS Device

The ideal current-voltage characteristics of the PMOS device are essentially the same as those as the NMOS device, but the drain current is out of the drain and vDS is replaced by vSD.

The saturation point is given by vSD(sat) = vSG + VTP.

For the p-channel device biased in the non-saturation (triode) region, the current is given by:

In the saturation region, the current is given by:


Ideal MOSFET Current-Voltage Characteristics – PMOS DeviceIdeal MOSFET Current-Voltage Characteristics – PMOS Device

The parameter Kp is the conduction parameter for the p-channel device is given by:

where W, L, and Cox are the channel width, length, and oxide capacitance per unit area.

The μp is the mobility of holes in the hole inversion layer.

Can be written in the form: where k′p = μpCox

For a p-channel MOSFET biased in the saturation region, we have:


Circuit Symbols and ConventionsCircuit Symbols and Conventions – PMOS enhancement mode


LIST OF FORMULAS: PMOSTRIODE OR NON-SATURATION REGION

SATURATION REGION

μp = mobility of holes and Cox = oxide capacitance per unit area.

Where

or

vSD (sat) vSD

VSG > |VTP |


• NMOSo VTN is POSITIVE

o VGS > VTN to turn on

o Triode/non-saturation region

o Saturation region

o VDSsat = VGS - VTN

• PMOSo VTP is NEGATIVE

o VSG > |VTP| to turn ono Triode/non-saturation

region

o Saturation region

o VSDsat = VSG + VTP

© electronics ece 1231 chapter 6 the field effect transistor

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