CATALOG 2010

355-0036 1414

1414 Shimonomoto, Higashimatsuyama, Sai tama 355-0036, JAPAN

TEL0493-24-6774 FAX0493-24-6715 www.mater ial-sys.com

Toshima Manufactur ing Co.,Ltd.

Contents 3P

4P

5P

6P

7P

8P

9P

10P

11P

12P

13P

14P

Mission

(1)

(2)

(3)

Magnetic Recording and Device Material

03

Ferroelectrics & Electrode Material

04

B-H Nested Butterfly Loops

Sputtering Target

Sputtering Target, PLD Target & Powder

P(L)ZT SBT KN/KT BiNaTiO BiFeO3

HfO2 HfSiO(N) HfO2-Al2O3 La2O3 La2O3-Al2O3

Pt Ir IrO2 SrRuO3 LaNiO3 TiN

DTR

AMF

+Bm

-Bm

+HmH-H

-HmBr

Br :

Hc :

Hc

a

b

c

d

e

f0

Volts

Nested Displacement Loops

60 40 20 20 40 60

Ang

stro

ms

30

25

20

15

10

5

0

-5

-10

-15

40u

30u

20u

10u

C etc.

CoCrPt-SiO2 etc.

Ru etc.

CoZrNb etc.

Nip etc.

Glass, Al

Pinning Layer

Substrate

Intermediate Layer

Soft Under Layer

Over Coat

Magnetic Layer

PMR

DTR

1.5

SBT

PZT

CCPSEM

CCP-

LaNiO3

FePt FePt-SiO2 FePtCu-C CCP

Ru

NiW

TiAlW

C

RuCo

CuCr

Cr

C-Co

Ru-SiO2

CuTi

Al2O3

CrN

Ru-TiO2

FeTa

SiO2

SiCx

Oxide Semiconductor & "TCO" Material

05

Optical & Optoelectronics Material

06

InGaZnO CuAlO2

Cu2O NiO

ZnO SnO

CuCrO2 ZnIr2O4

SrCu2O2

In2O3 ZnO TiO2 SnO2

LED

MgF2 Nb2Ox Al2O3 Ta2O5 TiO2 /SiO2

Ag Al

ITO TiO2:Nb GaN Ag ATO

CuSi GeSbTe

IGZO

100

90

80

70

60

50

40

30

20

10

0300 500 700 900 1100 1300 1500 1700

O2=2%

O2=4%

O2=8%

O2=2% : 86.8nm O2=4% : 111.4nm

O2=2% : 84.4nm

IGZO

Drain

IGZO(50nm)

High-k gate insulator

gate

Source

Mobility : 16.6cm2/Vs, Vth=0.9 V, on/off ratio = 107

10-3

10-4

10-5

10-6

10-7

10-8

10-9

10-10

10-11-1 0 1 2 3 4 5

Gas flow ratio O2/(Ar+O2)(%)

Gate voltage VG-(V)

Dra

in c

urre

nt / D

(A

)

VD = 5V

120

100

80

60

40

20

00 1 2 3 4 5

Drain voltage VD (V)

VG :1-5Vstep1V

Dra

in c

urre

nt / D

(A

)

Nb2OxNb2Ox

DC Nb2O5 TiO2High-n

Nb12O29 Nb2O4.83 99.9% (wt%) Fe0.001Ni0.005Si0.005Ta0.0015 Ti0.0005W0.0005Zr0.0005 4.5(g/cm3)Nb2O54.47g/cm3 4.0(W/mK) 2.0(x10-6/K) 310-2(cm)

Ar/O2 n( k(Target

Size

70nm

85/15

PulseDC3KW

200

405nm 550nm 635nm1550nm405nm 550nm 635nm1550nm

2.57 2.35 2.305 2.221.29E-

03-1.97E-

02-1.38E-

022.54E-

12

Wavelength[nm]

3.5

3

2.5

2

1.5

1

0.5

0

0.25

0.2

0.15

0.1

0.05

0

-0.05300 350 400 450 500 550 600 650 700 750 800At 3.0kW, Ar/O2=85/15 sccm, 70 nm

Sputter RateF15/sec

n k

Power(W)

50

45

40

35

30

25

20

15

10

5

00 1000 2000 3000 4000

Dep

ositi

on R

ate

(/s

ec)

Ar/O2=100/0Ar/O2= 85/15Ar/O2= 90/10

Sputtering Target Sputtering Target

IGZO(1-1-1-4)IGZO(1-1-1-4)

95% DC10-2cm IGZO(2-2-1-7)

Battery & Energy

07

Superconductor

08

""

YBCO

CeO2 Gd2Zr2O7 Ce NiO YSZ

Ni MgO SrTiO3 Al2O3 Mg

GdBCO PrBCO BSCC

sq

O2

1.00E13

1.00E12

1.00E11

1.00E10

1.00E09

1.00E08

1.00E07

1.00E063 4 5 6 7 8

UVUV

O2=4%1200A O2=5%1100A O2=7%1300A

L i 2

LiCoO2 LiMn2O4 LiCo1/3Ni1/3Mn1/3O2 LiFePO4

Si Nb2Ox Li4Ti5O12 NbTiOx

Li3PO4 Li6BaLa2Ta2O12 Li7La3Zr2O12

CuGa CuGaIn CuZnSn CuInTe2

In2S3 ZnS ZnO-MgO ZnO

AZO BZO GZO TiO2:Nb

SiN TiO2 Nb2OxMgF2

BiTe BiSbTe MgSi MnSi CoSb

500mm

100um

mm

um

Ag

Y123RE123

YSZ CeO2 NiO

Ni Ag

XRDGd123

XRDGd2Zr2O72

12000

10000

8000

6000

4000

2000

00 10 20 30 40 50 60 70 80 90 100

2

4500

4000

3500

3000

2500

2000

1500

1000

500

00 10 20 30 40 50 60 70 80 90 100

Sputtering Target, Powder, Paste Sputtering Target, MOCVD Precursor, Powder, Paste

ZnOZnO

2x10-2cm 1.2x10-2cmZnO=5.6898%up 99.3%

O2=0 1200AO2=4%1200AO2=5%1100AO2=7%1300A

100

90

80

70

60

50

40

30

20

10

00 500 1000 1500 2000 2500 3000

MOCVD Precursor

09

MOD Coating Solution

10

BST BaTiO3 LiNbO3

SolutionsSolutions

PZT SBT BFO KN/KT Sr2Nb[Ta]2O7

IGZO ZnO

TiO2 LaNiO3

In2O3

RuO2

SnO2 NiO

LSM LSC PCMO LiLaZrO SrTiO3

PrecursorsPrecursors

SEM image of IGZO spincoated film

TG-DTA chart of IGZO coating solution

0.00

-20.00

-40.00

-60.00

-80.00

-100.00

4.00

2.00

0.00

0.0 200.0 400.0 600.0 800.0

TG(%)

DTA(uV/mg)

169.7-26.99mg-83.15%

323.5-31.65mg-97.50%

800.0-32.01mg-98.62%

360.2

115.0

TFT

2000rpm20sec150 5min 450 15min

140nm200nm5003h210E+2cm

Ta

n SiSi:H

Ta

SiIGZO

H

Li

Na

K

Rb

Cs

Fr

Be

Mg

Ca

Sr

Ba

Ra

Sc

Y

Ln

La

Ti V Cr

Zr Nb Mo

Hf Ta W

Ce Pr Nd

Mn Fe Co

Tc Ru Rh

Re Os Ir

Pm Sm Eu

Ni Cu Zn

Pd Ag Cd

Pt Au Hg

Gd Tb Dy

B C

Al Si

Ga Ge

In Sn

Tl Pb

Ho Er

N O F

P S Cl

As Se Br

Sb Te I

Bi Po At

Tm Yb Lu

He

Ne

Ar

Kr

Xe

Rn

Zn

S1mol/lA1-0.5mol/lB0.5-0.33mol/lC0.33-0.25mol/lD0.25-0.2mol/lE0.2-0.15mol/lF0.15-0.1mol/lG:0.1mol/l

Materials m.p.( )Solubility

Toluene Butyl Acetate THF

Zn(TMOD)2 48 S A S

Zn(DPM)2 141 A B A

Zn(IBPM)2 20 A A A

Zn(DIBM)2 80 S A S

Zn(acac)2 138 G G G

InArTG

0%

-20%

-40%

-60%

-80%

-100%0 100 200 300 400 500 600

TG

In(DPM)3 17.87mg

In(DIBM)3 23.33mg

In(IBPM)3 18.14mg

In(TMOD)3 14.55mg

In(acac)3 20.88mg

200

100

5040

30

20

10

2.3 2.4 2.5 2.6

160 140 120

1000/TK-1

CoTMOD3

CoDPM3

CoDIBM3

CoIBPM3

Co

g/cm

2 h

CVDCo

DPM:R=R,=C(CH3)3

DIBM:R=R,=CH(CH3)2

IBPM:R=C(CH3)3, R,=CH(CH3)2

TMOD:R=C(CH3)3, R,=C(CH3)2C2H5

--diketonato complexes

R R,

CC

M

C

O O

n

Analyzing

11

New Material Development & Coating By Commissioning

www.material-sys.com

7

6

5

4

3

2

1

00 50 100 150 200 250 300

Sample Temp.K

x=0.1

x=0.025

x=0.05x=0.15

Res

istiv

ity10

-4 O

hm-m

0

-50

-100

-150

-200

-2500 50 100 150 200 250 300

Sample Temp.K

Sr2-xYxTiO4

x=0.1

x=0.025

x=0.05

x=0.15

See

beck

Coe

f. u

V/K

20

15

10

15

00 50 100 150 200 250 300

Sample Temp.K

x=0.1

x=0.025

x=0.05

x=0.15The

rmal

Con

duct

ivity

W/K

-m

NG

GOOD

NDA

NIKKISO Microtrac MT3000

Rigaku TTR

X(XRD)

-

SII SPS3000

ICP-AES

KEYENCE VE-7800

SEM)

SHIMADZU EDX-720

X(XRF)

MAC Science 2000S

TG-DTA)

HITACHI U-1900

12

20(1945)515 9,900 164(200711) (1) (2) (3) (4) 1414 24,971.48m2 11,417.56m2

Company

20 5 2410 46 3 12 5711 5 4 9 6 9 10 5 11 4 MOCVD12 2 12 7 ISO90011312 9,4161412 MOCVD17 1 9,9001710 KES 218 9 2110

History

Facilities

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4

1

5

2

6

3

13

20102P-P34P-P56P-P78P-P9MOCVDMOD10P-P1112P-P1314P-P15