001-87700 owner: ewoo rev *c tech lead: keer replace eeproms with a superior solution f-ram solution...

001-87700 Owner: EWOORev *C Tech lead: KEER

Replace EEPROMs with a Superior Solution

F-RAM Solution for Smart E-Meters

Presentation: To provide an engineering overview to customers for a Cypress solution.Title slide: To define what the presentation will cover. The subtitle is a one-sentence statement of the key opportunity.


33 million Smart E-Meters will be produced this year, with a 20.7% CAGR through 2017

Electric utilities are demanding more smart functionality from E-MetersTime-of-day usage tracking

Power quality monitoring

Real-time communication

Tamper-detection sensors and alarms

This functionality requires new components–including additional nonvolatile memory–resulting in higher BOM cost and power consumption

Smart E-Meter BOM cost and power consumption are key design parametersHigh demand for Smart E-Meters has increased competition

Utilities demand low-power Smart E-Meters to meet regional regulatory requirements

You require low-cost and low-power nonvolatile memory solutions

Market Vision: To define the market opportunity. Presents compelling data and end product photos relevant to the local market.

Smart E-Meter By Landis + Gyr

E-Meters Are Getting Smarter

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Terms You Will Hear TodaySmart E-MeterAn advanced electric meter that time-stamps and records consumption and device diagnostic data and automatically communicates it to a utility company

Electrically Erasable Programmable Read-Only Memory (EEPROM)A common nonvolatile memory that uses floating-gate technology to store data

Soak TimeThe 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers

Write On Power LossA failsafe method in which an MCU senses system power loss and instantly performs a Page Write of critical data to nonvolatile memory

Write EnduranceThe number of times a nonvolatile memory cell can be rewritten before it wears out

Wear LevelingA method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached

Ferroelectric Random Access Memory (F-RAM)™A fast-write, high-endurance, low-power nonvolatile memory that uses ferroelectric technology to store data

Terms of Art (ToAs): To clearly define for engineers all ToAs used in the presentation.To carefully and fully define Cypress-proprietary ToAs needed to explain our system solution.

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Design Problems Engineers Face1. Smart E-Meters must log all energy consumption and diagnostic dataSmart E-Meter EEPROMs require 5 ms of active power per Page Write for Soak Time

Soak Time requires additional capacitors or batteries to perform a Page Write On Power Loss

2. Typical Smart E-Meter applications exceed the 1 million write-cycle limitation of EEPROMWear Leveling is required to improve the Write Endurance of EEPROM over a Smart E-Meter’s 15-year lifespan

Wear Leveling requires up to 8x the memory density and additional software, increasing cost

3. Utility companies prefer Smart E-Meters with low power budgetsMany utility companies specify a maximum 1-W consumption for a Smart E-Meter

Eliminating Soak Time provides you with a larger power budget for other components

F-RAM solves these problemsRequires no Soak Time, enabling fast write

Requires no additional capacitors or batteries

Provides 100 trillion write cycles (200x the lifespan of a typical Smart E-Meter)

Consumes 2x to 5x less active power than EEPROM

F-RAM offers you an opportunity to replace EEPROMs with a superior solution

Traditional Approach and Challenges: To present the traditional approach and the challenges engineers will face when using it to realize the Market Vision. Ends with a one-sentence segue clearly stating the benefit of the Cypress solution.

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F-RAM Solution: Simple and Superior

Cypress Solution: To introduce CY products and show compellingly how they solve the challenges highlighted on the previous slide. To provide a short, clear list of what to do to get started.

2x EEPROM, up to 8x density for Wear Leveling

2.2-mF capacitor to hold up system for 5 ms per page write for Soak Time

Simplify a complex, EEPROM-based design…

F-RAM pin-to-pin replacement for EEPROM SOIC8

By choosing F-RAM as your nonvolatile memory solution…

To produce superior Smart E-Meters at a lower cost.

Smart E-Meter by Landis + Gyr

Wear Leveling software algorithm to increase EEPROM Write Endurance

File System

Memory

Controller

Worn Cell

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Design a Smart E-Meter with F-RAM

Smart E-Meter with F-RAM Example F-RAM is used as RAM and ROMPower usage data loggingDiagnostic data loggingCalibration data storageFactory default code storageDynamic tariff data storageDynamic configuration code storage

F-RAM simplifies your designReplaces multiple EEPROMsReduces board capacitanceEliminates Wear Leveling

Serial F-RAM part optionsDensities: 4Kb – 2MbVoltages: 2.0 – 5.5 VInterfaces: SPI: 10 – 40 MHz I2C: 1.0 – 3.4 MHzPackages: SOIC8, EIAJ8, TDFN8

Cypress F-RAM offers you a flexible and simple low-power nonvolatile memory solution

Cypress Solution: To give details on CY products and show compellingly how they solve the challenges highlighted on a previous slide. To provide a short, clear list of what to do to get started.

6b


App Notes: F-RAM for Smart E-Meters SPI Guide for F-RAM

F-RAM Data Protection During Power Cycles

Design ChallengesCapture real-time data instantly on power lossEnsure power to complete a Write On Power LossLog data up to every second over a 15-year product lifespanMinimize the system power budget

F-RAM SolutionRequires no Soak Time to write dataRequires no additional capacitors or batteriesProvides 100 trillion write cyclesConsumes 2x to 5x less active power than EEPROM

F-RAM Value

Suggested Collateral

How To Get Started

Block Diagram


Solution Examples: To give detailed one-page Solution Examples from the field in the specified format.

F-RAM™ Solution Example – Smart E-Meters

Download and view F-RAM App NotesOrder Samples from your distributor: Cypress Distributor ListRegister at Cypress.com to access online technical support

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Microcontroller

LCD

Wired I/O

Wireless Communications

PowerlineCommunications

F-RAM

Voltage Sensor

Current Sensor

Tamper Sensor

4

8

4 2

4

2

Nonvolatile Memory


Cypress F-RAM vs. Competition

F-RAM EEPROM NOR Flash MRAM

SPI Speed 40 MHz 20 MHz 50 MHz 40 MHz

I2C Speed 3.4 MHz 1 MHz N/A N/A

Write Delay 0 ms 5 ms 50 ms 0 ms

Endurance (Write Cycles) 1014 106 105 Unlimited

Endurance (Solution Lifespan)1 3,170 years 2 years 2 months Unlimited

Wear Leveling No Yes Yes No

Active Read / Write Current2 3 mA/3 mA 10 mA/10 mA 8 mA/15 mA 10 mA/27 mA

Sleep Current2 6 µA 3 µA 50 µA 115 µA

Competitive Comparison: To define key features of the Cypress solution and demonstrate its superiority over the Next Best Alternatives (NBA’s). Must be credible and objective to the salesperson and customer.

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1 Conditions: F-RAM writes at a 1-ms interval; EEPROM/Flash writes at a 1-minute interval2 Conditions: Max current, SPI, 10 MHz – 40 MHz, 3 V, 85°C


Competitor

EEPROM: (2x) Atmel AT25512 512kbPrice: $2.821

BOM Integration

5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitorPrice: $0.391

Additional Value

Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 unitsValue Added: $0.10

$2.82

$0.39

$0.39

$0.10

$0.10

$3.31

Competitor

Capacitor for 5-ms Soak Time Page Writes

BOM Integration Value

Wear Leveling Firmware Development

Total Additional Value

Total Value Delivered

Target Cypress Solution: Total Cost:

47% Total Savings:

FM25CL64B-GTR$1.761

$1.55

1 Digikey website 1ku pricing on 7/18/2014EVC Slide: To clearly define the value of the Cypress solution, including BOM integration and unique functionality.

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F-RAM Smart E-Meter Solution Value


Here’s How to Get Started

1. Read our F-RAM Smart E-Meter Application Note (AN87352): www.cypress.com/AN87352

2. Ask your distributor for free samples of 64Kb to 2Mb F-RAM

3. Register to access online technical support: Cypress.com

Smart E-Meter by GE (USA)


11Call to Action: To tell customers how to start their design process.


References and LinksApp Note (AN87352) for F-RAM in Smart E-Meters: www.cypress.com/AN87352

Cypress Serial F-RAM Web Page: www.cypress.com/?id=4566

FM25CL64B-GTR Datasheet: www.cypress.com/?mpn=FM25CL64B-GTR

App Note (AN304) for F-RAM SPI Guide: www.cypress.com/?rID=82691

13References and Links: Provide comprehensive view of resources to assist in learning about and adapting the solution.

001-87700 owner: ewoo rev *c tech lead: keer replace eeproms with a superior solution f-ram solution...

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