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CST Advanced Training 2004CST Advanced Training 2004@@ DaedeokDaedeok Convention Town (2004.03.24)Convention Town (2004.03.24)

CSTCST EMEM StudioStudioTMTM

:: ExamplesExamples

Chang-Kyun PARK(Ph. D. St.)

Thin Films & Devices (TFD) Lab.Thin Films & Devices (TFD) Lab.

Dept. of Electrical Engineering,Dept. of Electrical Engineering,

Hanyang University @Hanyang University @AnsanAnsan Campus, KOREACampus, KOREA

E-mail:[email protected]

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OOUTLINEUTLINE

Introduction

Example

E-static

Electrometer

CST EMCST EM StudioStudioTMTM v.2.0v.2.0

M-staticRotary Encoder

J-static

Circuit Breaker

Tracking

Electron gun

RJ 45 LAN connectorVariable capacitor

Floating Potential

Field EmitterTapered-type gated FEA

LFEddy current sensor

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TFD Lab.TFD Lab.Hanyang UniversityHanyang UniversityProfessor: JinProfessor: Jin--SeokSeok ParkPark

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TFD Lab.TFD Lab.

TFD Lab.Thin films and devices lab. for electronic displays and communications

http://tfd.hanyang.ac.kr

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CSTCST

EM StudioEM Studio

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MAFIAMAFIA

CSTMAFIA

MAFIA (Maxwells Equations by the Finite Integration Algorithm)

MAFIA is an interactive program package for the computation ofelectromagnetic fields. It is based directly on the fundamental equationsof electromagnetic fields, Maxwells equations.

MAFIA is a modular program, it isdivided in preprocessor,postprocessor and solvers fordifferent special cases of Maxwells

equations

MAFIA includes an optimizer, it runsinteractively as well as in batch orsemi interactive using predefined

command sequences. It has apowerful command language forautomation and optimizingpurposes and an advanced

interactive graphical output withthousands of display options

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MAFIA ModuleMAFIA Module

MAFIA Module

CSTMAFIA

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MAFIAMAFIA

The Following modules are available (I)

CSTMAFIA

M :Preprocessor, includes solid modeler, CAD import, 3D graphics

P:Postprocessor, includes 3D graphics and calculation of deduced

quantities like far field and impedance

S:Static field module, solves electrostatics, magnetostatics, heat flowproblems, stationary current flow problems and electro-quasistaticproblems

T3 :Time domain module, simulates time dependent wavepropagation, most general and versatile in application. Uses Cartesiancoordinates

TS3

:Time domain module, simulates charged particle movement intime dependent fields including the interaction of particles and fields.Uses Cartesian coordinates only

TS2 :Time domain module, simulates charged particle movement in

time dependent fields including the interaction of particles and fieldsin cylinder symmetrical structures

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MAFIAMAFIA

The Following modules are available (II)

CSTMAFIA

E:Frequency domain eigenmode module, finds modes in resonators

and waveguidesW3 :Frequency domain module, covers the whole frequency range

H3 :Thermodynamic module, solving thermodynamic problems in timedomain in either Cartesian or polar coordinate system

T2 :Time domain module, simulates time dependent wave propagationwithin cylinder symmetrical structures. Not yet available under GUI

OO :Optimizer with many built in strategies. Optimizing capabilitiesnot

yet completely available under GUIA3 :Time domain acoustic solver. Not yet available under GUI

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The Simulation MethodThe Simulation Method

Background of the Simulation Method

CSTEM Studio

CST EM STUDIO is a general-purpose electromagnetic simulator basedon the Finite Integration Technique (FIT), first purposed by Weiland in1976/1977.

Finite Integration + PBA(Statics to THz)

Maxwell Grid Equations

E-static

0=

ti

ta

0

t

M-static

J-static

Tracking

Frequency Domain (j>0)

Eigenvalue Problem (j=0)

Implicit

ExplicitTime

Domain

PIC

MAFIA

EMS MWS

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CSTCST EM StudioEM Studio

Example: EExample: E--staticstatic

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SS--static 1: Electrometerstatic 1: Electrometer

Introduction

CSTEM Studio

PEC

This Example deals with the simulation of a simple electrometer device, whichcan be used for voltage measurements. The model used for the electrometerconsists of three parts: the electrometers scale, the ground, and the pointer.

Results of interest: the capacitance and the torque for different angles of thepointer

The main dimensions of theelectrometer device (unit: cm)

Pointer(PEC, 1,000V)

Scale(Dielectric,=10)

Ground

(PEC, 0V)

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Summary

CSTEM Studio

Meshcells: 294,528

48min, 10secTotal solver

time

Angle

From 20 to 70 (11steps)

Parametersweep

294,528Meshcells

ElectrostaticSolver

Mesh generation

i l

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Potential

CSTEM Studio

E-Field

S i li 1 El

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CSTEM Studio

Torque vsangle

SS i 2 RJ 45 Ct ti 2 RJ 45 C t

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SS--static 2: RJ 45 Connectorstatic 2: RJ 45 Connector

Introduction

CSTEM Studio

This example shows the calculation of the capacitance matrix of a RJ45connection. The model consists of the connector and the corresponding socket,each containing eight wires for the signal transmission. The wires of the socketare fixed to a substrate plate, every other of them additionally connected to a

metallic ground plane. This provides some kind of shielding effect for thetransmission of the wire signals.

Results of interest:capacitance Matrix

SS t ti 2 RJ 45 C tt ti 2 RJ 45 C t

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Define Potential

CSTEM Studio

Potential 1(PCB PEC, 0V)



Potential 4

(PCB PEC, 1V) Potential 5(PCB PEC, 1V)


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Potential

CSTEM Studio

E-Field


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Capacitance Matrix

CSTEM Studio

SS t ti 3 V i bl C itstatic 3: Variable Capacitor

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SS--static 3: Variable Capacitorstatic 3: Variable Capacitor

Introduction

CSTEM Studio

The variable capacitor example demonstrates the parameter sweep feature incombination with the capacitance calculation.

Plate(PCB PEC, 0V)

Plate

(PCB PEC, 1V)

Epsilon

(Dielectric,=100)

Parameter Sweep

SS static 3: Variable Capacitorstatic 3: Variable Capacitor

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Capacitance Vs Alpha

CSTEM Studio

SS--static 3: Variable Capacitorstatic 3: Variable Capacitor

SS static 4: Floating Potentialstatic 4: Floating Potential

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SS--static 4: Floating Potentialstatic 4: Floating Potential

Introduction

CSTEM Studio

This examples demonstrates how to consider floating potentials in anelectrostatic calculation. It consists of four metallic plates and two plates ofhigh dielectric material (relative permittivity 10000). On the two larger metallicplates a potential is defined, the other two metallic plates carry a charge of 0C.

Plate(PCB PEC, -1V)

Plate(PCB PEC, 1V)

PEC

Floating Potential

High dielectric material(relative permittivity 10000)

Applied charge value: 0C


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Result: Electric Field Distributions

CSTEM Studio

1V

-1V

0.469V

-0.469V

0.467V

-0.467V



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CSTEM Studio


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Result: Potential Distributions

CSTEM Studio

1V

-1V

0.469V

0V

0V

-0.469V



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CSTEM Studio


SS--static 5: Field emitterstatic 5: Field emitter

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X-cut Plane

Cathode(0V)

Isolated ElectrodeBallast layer, a-Si

Insulator, SiO2

Gate (30V)

CNT

Anode (50V)

10m

SS-static 5: Field emitterstatic 5: Field emitter


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Material PropertyUnit: m

CNT(PEC)

Diameter: 0.040

Height: 1Tip radius: 0.020

Base: a-Si

Height: 2

Diameter: 0.040

SS static 5: Field emitterstatic 5: Field emitter


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Potential

Unit: m

Cathode(0V)

Gate(30V)

Anode(50V)



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Floating PotentialUnit: m

Isolated Electrode

CNT



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Results: Potential Distribution

Isolated Electrode: 26V

Tip Region: 27V



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Results: Electric Field Distribution

S static 5: Field emitter


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Results: 1D Plot

SS--static 6: Taperedstatic 6: Tapered--type Gatedtype Gated--FEAFEA

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Geometry

Cathode(0V) Inter-dielectric

Ballast layer, a-Si

Insulator, SiO2

Gate (50V)

Parameter Sweep

CNT-Floating Potential (0C)

Monitoring Point

pp ypyp


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45o

68o

90o

Parameter Sweep (Pierce Electrode angle: 90o~12.5o)

Result: Potential Distributions

pp ypyp


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Parameter Sweep (Pierce Electrode angle: 90o~12.5o)

45o

68o

90o


pp ypyp

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SS--static 7: ICPstatic 7: ICP--ReactorReactor

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Simulation of ICP Reactor under DC Bias Conditions

System summary

OS: MS Windows XP V.5.1 SP1 Model: Intel Zeon (SE7505VB2) 2CPU Process: Genuine Intel ~2790Mhz

Memory: 1,024.00MB Graphic Adapter: Quadro4 980XGL

Simulation summary

Tool: CST EM Studio TM v 1.3 (CST

GmbH) Simulation field: Electrostatic Solver Number of nodes: 1,074,480 Mesh generation time: 130 s Solver time: 13 s

Modeling of ICP Reactor Simulation


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Conditions Simulation Results Under 300 V Conditions

Potential distribution Electric Field distribution


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Conditions Simulation Results Under -450 V Conditions

Potential distribution Electric Field distribution

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CSTCST EM StudioEM Studio

Example: MExample: M--staticstatic

MM--static 1: Rotary Encoderstatic 1: Rotary Encoder

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Introduction

CSTEM Studio

In this tutorial a rotary encoder consisting of two iron yokes, a permanentmagnet and two hall sensorsis analyzed.

Both yokes form a magnetic circuit, which is driven by a cylindrical permanentmagnet. Two hall sensors are placed in the air gap between the yokes tomeasure the flux density in the gap. By twisting the yokes the B-field changeslinear with the rotation angle.

Upper Yoke(Iron 1000)

Bottom Yoke(Iron 1000)

Magnet

Hall Sensor

0.2 T| z

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MM--static 1: Rotary Encoderstatic 1: Rotary Encoder

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Parameter Sweep

CSTEM Studio

Field Watch Position

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LF: Eddy Current SensorLF: Eddy Current Sensor

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Introduction

CSTEM Studio

In this example and eddy current sensor is modeled to simulate non-destructivematerial test. You will analyze an eddy current sensor driven by a low frequencycoil generating eddy currents in an aluminum probe plate.

The structure depicted above consists of the sensor, represented by anexcitation current coil embedded in iron material. Below this sensor the probeplate is given as a lossy aluminum material, allowing the flow of eddy current.Inside this plate a material defect is modeled as a gap, which should bedetected by the changing voltage at the coil.

LF: Eddy Current SensorLF: Eddy Current Sensor

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CSTEM Studio

B-Field (0o) Eddy Current (90o)

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SC: Circuit BreakerSC: Circuit Breaker

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Introduction

CSTEM Studio

In this example, you will analyze a circuit breaker consisting of two contactspringsconnected by a bridge.

One matter of concern is the current flow from one contact over the bridge tothe other contact. Therefore two current port are defined for the stationarycurrent solver. After the solver run the fields are visualized and then used as asource field for a subsequent carried out magnetostatic calculation.

Cupper(J-port, -0.05V)

Cupper(J-port, 0.05V)

Contact pad(PEC)

Bridge(PEC)


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CSTEM Studio

Current Density

Loss Power (P):6.856485e+001 [W]R= V2/P=0.1*0.1/P = 1.458473e-4I = P/V = V/R = 685.65 [A]


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CSTEM Studio

H-Field

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CSTCST EM StudioEM StudioExample: TrackingExample: Tracking

SolverSolver

Tracking 1: Electron GunTracking 1: Electron Gun

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Introduction

CSTEM Studio

This example demonstrated how a particle tracking can be performed. Twotypes of field results were used here, an electrostaic field is used to accelerateelectrons being emitted from a cathode and a magnetostatic field which iscaused by a helmholzcoil in order to focus the electron beam.

Anode(PEC, 1000V)

Cathode(PEC, 0V)

Focus coil(0.4A)

Tracking 1: Electron GunTracking 1: Electron Gun

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Particle Source

CSTEM Studio

Emission Site(electron)

Particle Tracking

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