1 transistors they are unidirectional current carrying devices with capability to control the...
TRANSCRIPT
1
Transistors
•They are unidirectional current carrying devices with capability to control the current flowing through them
• The switch current can be controlled by either current or voltage
• Bipolar Junction Transistors (BJT) control current by current
• Field Effect Transistors (FET) control current by voltage
•They can be used either as switches or as amplifiers
2
NPN Bipolar Junction Transistor•One N-P (Base Collector) diode one P-N (Base Emitter) diode
3
PNP Bipolar Junction Transistor•One P-N (Base Collector) diode one N-P (Base Emitter) diode
4
NPN BJT Current flow
5
BJT and
•From the previous figure iE = iB + iC
•Define = iC / iE
•Define = iC / iB
•Then = iC / (iE –iC) = /(1- )
•Then iC = iE ; iB = (1-) iE
•Typically 100 for small signal BJTs (BJTs thathandle low power) operating in active region (region where BJTs work as amplifiers)
6
BJT in Active Region
Common Emitter(CE) Connection
• Called CE because emitter is common to both VBB and VCC
7
BJT in Active Region (2)•Base Emitter junction is forward biased
•Base Collector junction is reverse biased
•For a particular iB, iC is independent of RCC
transistor is acting as current controlled current source (iC is controlled by iB, and iC = iB)
• Since the base emitter junction is forward biased, from Shockleyequation
1exp
T
BECSC V
VIi
8
Early Effect and Early Voltage
• As reverse-bias across collector-base junction increases, width of the collector-base depletion layer increases and width of the base decreases (base-width modulation).
• In a practical BJT, output characteristics have a positive slope in forward-active region; collector current is not independent of vCE.
• Early effect: When output characteristics are extrapolated back to point of zero iC, curves intersect (approximately) at a common point vCE = -VA which lies between 15 V and 150 V. (VA is named the Early voltage)
• Simplified equations (including Early effect):
iCI
Sexp
vBE
VT
1v
CE
VA
F
FO1
vCE
VA
iB
IS
FO
expv
BE
VT
Chap 5 - 8
9
BJT in Active Region (3)
•Normally the above equation is never used to calculate iC, iB Since for all small signal transistors vBE 0.7. It is only useful for deriving the small signal characteristics of the BJT.
•For example, for the CE connection, iB can be simply calculated as,
BB
BEBBB R
VVi
or by drawing load line on the base –emitter side
10
Deriving BJT Operating points in Active Region –An Example
In the CE Transistor circuit shown earlier VBB= 5V, RBB= 107.5 k, RCC = 1 k, VCC = 10V. Find IB,IC,VCE, and the transistor power dissipation using the characteristics as shown below
BB
BEBBB R
VVI
By Applying KVL to the base emitter circuit
By using this equation along with the iB / vBE characteristics of the base emitter junction, IB = 40 A
iB
100 A
0
5V vBE
11
Deriving BJT Operating points in Active Region –An Example (2)
By using this equation along with the iC / vCE characteristics of the base collector junction, iC = 4 mA, VCE = 6V
By Applying KVL to the collector emitter circuit
CC
CECCC R
VVI
100A40
mA4
I
I
B
C
Transistor power dissipation = VCEIC = 24 mW
We can also solve the problem without using the characteristicsif and VBE values are known
iC
10 mA
0
20V vCE
100 A
80 A
60 A
40 A
20 A
12
BJT in Cutoff Region
•Under this condition iB= 0
•As a result iC becomes negligibly small
•Both base-emitter as well base-collector junctions may be reverse biased
•Under this condition the BJT can be treated as an off switch
13
BJT in Saturation Region
•Under this condition iC / iB in active region
•Both base emitter as well as base collector junctions are forward biased
•VCE 0.2 V
•Under this condition the BJT can be treated as an on switch
14
•A BJT can enter saturation in the following ways (refer to the CE circuit)
•For a particular value of iB, if we keep on increasing RCC
•For a particular value of RCC, if we keep on increasing iB
•For a particular value of iB, if we replace the transistor with one with higher
BJT in Saturation Region (2)
15
In the CE Transistor circuit shown earlier VBB= 5V, RBB= 107.5 k, RCC = 10 k, VCC = 10V. Find IB,IC,VCE, and the transistor power dissipation using the characteristics as shown below
BJT in Saturation Region – Example 1
Here even though IB is still 40 A; from the output characteristics, IC can be found to be only about 1mA and VCE 0.2V( VBC 0.5V or base collector junction is forward biased (how?))
= IC / IB = 1mA/40 A = 25 100
iC
10 mA
0
20V vCE
100 A
80 A
60 A
40 A
20 A
16
BJT in Saturation Region – Example 2
In the CE Transistor circuit shown earlier VBB= 5V, RBB= 43 k, RCC = 1 k, VCC = 10V. Find IB,IC,VCE, and the transistor power dissipation using the characteristics as shown below
Here IB is 100 A from the input characteristics; IC can be found to be only about 9.5 mA from the output characteristics and VCE 0.5V( VBC 0.2V or base collector junction is forward biased (how?))
= IC / IB = 9.5 mA/100 A = 95 100
Note: In this case the BJT is not in very hard saturation
Transistor power dissipation = VCEIC 4.7 mW
17
10 mA
Output Characteristics
iC
0
20V vCE
100 A
80 A
60 A
40 A
20 A
iB
100 A
0
5V vBE
Input Characteristics
BJT in Saturation Region – Example 2 (2)
18
In the CE Transistor circuit shown earlier VBB= 5V, VBE = 0.7V RBB= 107.5 k, RCC = 1 k, VCC = 10V, = 400. Find IB,IC,VCE, and the transistor power dissipation using the characteristics as shown below
BJT in Saturation Region – Example 3
A40R
VVI
BB
BEBBB
By Applying KVL to the base emitter circuit
Then IC = IB= 400*40 A = 16000 A and VCE = VCC-RCC* IC =10- 0.016*1000 = -6V(?)But VCE cannot become negative (since current can flow only from collector to emitter).Hence the transistor is in saturation
19
BJT in Saturation Region – Example 3(2)
Hence VCE 0.2V
IC = (10 –0.2) /1 = 9.8 mA
Hence the operating = 9.8 mA / 40 A = 245
20
BJT Operating Regions at a Glance (1)
21
BJT Operating Regions at a Glance (2)
22
BJT Large-signal (DC) model
23
BJT ‘Q’ Point (Bias Point)
•Q point means Quiescent or Operating point
• Very important for amplifiers because wrong ‘Q’ point selection increases amplifier distortion
•Need to have a stable ‘Q’ point, meaning the the operating point should not be sensitive to variation to temperature or BJT , which can vary widely
24
Four Resistor bias Circuit for Stable ‘Q’ Point
By far best circuit for providing stable bias point
25
Analysis of 4 Resistor Bias Circuit
21
2THB RR
RVccVV
21
21THB RR
RRRR
26
Applying KVL to the base-emitter circuit of the Thevenized Equivalent formVB - IB RB -VBE - IE RE = 0 (1)
Since IE = IB + IC = IB + IB= (1+ )IB (2)
Replacing IE by (1+ )IB in (1), we get
Analysis of 4 Resistor Bias Circuit (2)
EB
BEBB R)1(R
VVI
(3)
If we design (1+ )RE RB (say (1+ )RE 100RB)
ThenE
BEBB R)1(
VVI
(4)
27
Analysis of 4 Resistor Bias Circuit (3)
E
BEBEC R
VVII
(5)And (for large )
Hence IC and IE become independent of !
Thus we can setup a Q-point independent of which tends tovary widely even within transistors of identical part number (For example, of 2N2222A, a NPN BJT can vary between75 and 325 for IC = 1 mA and VCE = 10V)
28
4 Resistor Bias Circuit -Example
A 2N2222A is connected as shown with R1 = 6.8 k, R2 = 1 k, RC = 3.3 k,
RE = 1 k and VCC = 30V. AssumeVBE = 0.7V. Compute VCC and IC for = i)100and ii) 300
29
4 Resistor Bias Circuit –Example (1)i) = 100
V85.318.6
1*30
RR
RVccVV
21
2THB
k872.018.6
1*8.6
RR
RRRR
21
21THB
A92.301*101872.0
7.085.3
R)1(R
VVI
EB
BEBB
ICQ = IB = 3.09 mAIEQ = (1+ )IB = 3.12 mA
VCEQ = VCC-ICRC-IERE = 30-3.09*3.3-3.12*1=16.68V
30
i) = 300
V85.318.6
1*30
RR
RVccVV
21
2THB
k872.018.6
1*8.6
RR
RRRR
21
21THB
A43.101*301872.0
7.085.3
R)1(R
VVI
EB
BEBB
ICQ = 300IB = 3.13 mAIEQ = (1+ )IB = 3.14 mA
VCEQ = VCC-ICRC-IERE = 30-3.13*3.3-3.14*1=16.53V
4 Resistor Bias Circuit –Example (2)
31
4 Resistor Bias Circuit –Example (3)
The above table shows that even with wide variation of the bias points are very stable.
= 100 = 300%
Change
VCEQ 16.68 V
16.53 V
0.9 %
ICQ
3.09 mA
3.13 mA
1.29 %
32
Four-Resistor Bias Network for BJT
VEQ
VCC
R1
R1R
2
REQ
R1
R2
R1R
2
R1R
2
VEQ
REQ
IBV
BER
EI
E
412,000IB0.716,000(
F1)I
B
IB
VEQ
VBE
REQ
(F1)R
E
4V-0.7V
1.231062.68 A
IC
FI
B201 A
IE(
F1)I
B204 A
VCE
VCC
RCI
C R
EI
E
VCE
VCC
RC
RF
F
I
C4.32 V
F. A. region correct - Q-point is (201 A, 4.32 V)
F 75
33
Four-Resistor Bias Network for BJT (cont.)
• All calculated currents > 0, VBC = VBE - VCE = 0.7 - 4.32 = - 3.62 V
• Hence, base-collector junction is reverse-biased, and assumption of forward-active region operation is correct.
• Load-line for the circuit is:
VCE
VCC
RC
RF
F
I
C12 38,200I
C
The two points needed to plot the load line are (0, 12 V) and (314 A, 0). Resulting load line is plotted on common-emitter output characteristics.
IB = 2.7 A, intersection of corresponding characteristic with load line gives Q-point.
34
Four-Resistor Bias Network for BJT: Design Objectives
• We know that
• This implies that IB << I2, so that I1 = I2. So base current doesn’t disturb voltage divider action. Thus, Q-point is independent of base current as well as current gain.
• Also, VEQ is designed to be large enough that small variations in the assumed value of VBE won’t affect IE.
• Current in base voltage divider network is limited by choosing I2 ≤ IC/5.
This ensures that power dissipation in bias resistors is < 17 % of total quiescent power consumed by circuit and I2 >> IB for > 50.
IE
VEQ
VBE
REQ
IB
RE
V
EQ V
BE
RE
for REQ
IB(V
EQ V
BE)
35
Four-Resistor Bias Network for BJT: Design Guidelines
• Choose Thévenin equivalent base voltage
• Select R1 to set I1 = 9IB.
• Select R2 to set I2 = 10IB.
• RE is determined by VEQ and desired IC.
• RC is determined by desired VCE.
VCC4
VEQ
VCC2
R1
VEQ
9IB
R2
VCC
VEQ
10IB
RE
VEQ
VBE
IC
RC
VCC
VCE
IC
RE
36
Four-Resistor Bias Network for BJT: Example
• Problem: Design 4-resistor bias circuit with given parameters.• Given data: IC = 750 A, F = 100, VCC = 15 V, VCE = 5 V• Assumptions: Forward-active operation region, VBE = 0.7 V• Analysis: Divide (VCC - VCE) equally between RE and RC. Thus, VE = 5 V and VC = 10 V
RC
VCC
VC
IC
6.67 k
RE
VE
IE
6.60 k
VBV
EV
BE5.7 V
IBI
C
F
7.5 A
I210I
B75.0 A
I19I
B67.5 A
R1
VB
9IB
84.4 k
R2
VCC
VB
10IB
124 k
37
Two-Resistor Bias Network for BJT: Example
• Problem: Find Q-point for pnp transistor in 2-resistor bias circuit with given parameters.• Given data: F = 50, VCC = 9 V• Assumptions: Forward-active operation region, VEB = 0.7 V• Analysis:
9VEB
18,000IB1000(I
CI
B)
9VEB
18,000IB1000(51)I
B
IB9V 0.7V
69,000120 A
IC50I
B6.01 mA
VEC
9 1000(ICI
B)2.88 V
VBC
2.18 VForward-active region operation is correct Q-point is : (6.01 mA, 2.88 V)