2011 - graz university of technologylampx.tugraz.at/~hadley/memm/lectures15/jul2.pdf · there are...
TRANSCRIPT
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http://en.wikipedia.org/wiki/Moore%27s_law#mediaviewer/File:Transistor_Count_and_Moore%27s_Law_-_2011.svg
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20 nm
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http://www.itrs.net/reports.html
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http://www.imec-nl.nl/nl_en/research/cmore---heterogeneous-integratio.html
CMORE - heterogeneous integration
For pMOS a strained Ge channel and for nMOS a strained InGaAs channel (with high In content) promises to be the best way for further CMOS scaling.
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Graphene
• Graphene transistors (on a Si substrate)Gate length 1 micron
http://ww
w.zdnet.com/ibm
-spins-nanotubes-wire-and-graphene-3040094603/
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http://ww
w.imec.be/ScientificR
eport/SR2011/1414174.htm
l
One of the most promising candidates is the tunnel field-effect transistor (FET), which is a gated-diode operating based on band-to-band tunneling at the junction. The gate voltage changes the distance the electrons need to tunnel.
Tunnel FETs
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There are no technologies (single electron transistors, molecular electronics, superconducting electronics, spintronics, NEMs... ) that can provide performance similar to CMOS at a muchsmaller size scale.
There are presently no transistors cheaper than silicon transistors
Candidates for orders of magnitude improvements of performance are quantum computing and molecular electronics.
Miniaturization ends with CMOS
Institute of Solid State Physics
Peter Hadley
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There are two lengths in an amplifier.
Gain requires leverage
Institute of Solid State Physics
Peter Hadley
If the short length is 1 nm, the long length is 10 nm.
In CMOS the gate insulator is much thinner than the gate length.
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1,4-benzenedithiol
Measuring molecules
Results are unreproducible
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Jiwoong Park, Abhay N. Pasupathy, Jonas I. Goldsmith, Connie Chang, Yuval Yaish, Jason R. Petta, Marie Rinkoski, James P. Sethna, Héctor D. Abruña, Paul L. McEuen, and Daniel C. Ralph, Nature 417 p. 722 (2002).
Molecular electronics
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Easier to make reproducible contacts.
Imaging of individual molecular assemblies possible
Nanowires or nanocrystals of conventional semiconductors
Use big 'molecules' as electronic components
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AFM image of MOPV4 fibers
MOPV
Albert Schenning, Eindhoven
OPV4T
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Phthalocyanine Polyisocyanides
Using templates for self-assembly
Alan Rowan, Nijmegen
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hexabenzocoronenes
Müllen, Mainz
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Carbon nanotube transistors
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After Miniaturization
Increasing the level of self-assembly in a fabrication process will replace miniaturization as a guiding principle for making cheaper circuits.
Molecular transistors must be large molecules. Transistors will have dimensions of ~10 nm
Low current drive of molecular devices will mean they will have to be put in parallel.
Lighting panels and solar cells will be the first self-assembled devices.
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Organic microprocessor
Institute of Solid State PhysicsTechnische Universität Graz
A modern computer has the processing power of a mosquito brain.
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Carbon monoxide man 1 nm
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(Im
ages
: Pau
l Rot
hem
und)
Bottom-up technology
DNA Origami
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Bottom-up technology
Bacterial motor
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Bottom-up technology
Kinesin myosin-actin
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Ribosome linklinklink
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Ribosome linklinklink
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Nanomachines
ATP-ase
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Atomistic Design
Institute for Molecular Manufacturinghttp://www.imm.org/
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New materialssynthesis routes
V.C. Sundar, A.D. Yablon, J. L. Grazul, M. Ilan and J. Aizenberg, "Fibre-optical features of a glass sponge," Nature vol. 424 p. 899 (2003).
Produced at room temperature from sunlight and seawater.
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http://www.physicscentral.com/explore/pictures/algae.cfm
Calcite crystals form photonic crystal
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Lotus effect
Reversible glue
Tough materials
http://www.mrti.utep.edu/Full%20Pages/selfass.htm
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micelles
rod like micelles
Self-Assembly
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Aptamers
Jeong-O Lee, KRICT
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Biotin - Streptavidin
Molecular recognition
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Self-assembly
poly(3-hexylthiophene)polystyrene spheres with a diameter of 500 nm
The future of efficient electronics manufacturing lies in using more self-assembly.
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α - substituted quinquethiophene SAM
SiO2
poly-Si
130 nm
Bottom-up Organic Integrated Circuits
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Institute of Solid State PhysicsTechnische Universität Graz
Organic Integrated Circuits
poly(3-hexylthiophene)E. C.P. Smith, et al., Nature (2008)S. G. J. Mathiessen, Nature Nanotechnology (2009)F. Gholamrezaie, Nanoletters (2010)
inverterring oscillatorcode generator with 300 transistors
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Institute of Solid State PhysicsTechnische Universität Graz
Bottom-up Organic Integrated Circuits
Nature 455, pp. 956-959 (2008)
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15 bit code generator
300 SAMFETs
Bottom-up Organic Integrated Circuits
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Institute of Solid State PhysicsNano Tec Center Weiz
Technische Universität Graz
Photo detectors of inkjet printed HgTe semiconducting nanocrystals
Advanced Materials 19 pp. 3574 - 3578 (2007)
Solution processed devices
Appl. Phys. Lett. 92, 183305 (2008)
Semiconductor nanosphere methyl-substituted laddertype poly(para-phenylene) OLEDs
Emil List
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Solution processedinorganic devices
Sean A. Stauth and BabakA. Parviz, PNAS vol. 103 pp. 13922–13927 (2006)
Institute of Solid State Physics
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Nanometer consortium, Lund Sweden
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Control of Thickness and Orientation of Solution-Grown Silicon Nanowires, Justin D. Holmes, Keith P. Johnston, R. Christopher Doty, Brian A. Korgel, Science 287. pp. 1471 -1473 (2000).
Solution-Grown Silicon Nanowires
Si, Ge, ZnO, CdTe, CdSe
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• Self organization of structures from 100 microns to 0.1 nm• Learn chemistry from biology• Exploit biological infrastructure
– Trees = self assembled solar cells, batteries• Self assemble lithographically produced devices
– lighting panels
Self-assembly of devices will be a key competence
Institute of Solid State Physics