2017 nepp tasks update for ceramic and …...2017 nepp tasks update for ceramic and tantalum...
TRANSCRIPT
2017 NEPP Tasks Update for Ceramic and Tantalum Capacitors
Alexander TeverovskyAS&D, Inc.
Work performed for Parts, Packaging, and Assembly Technologies Office,
NASA GSFC, Code [email protected]
NASA Electronic Parts and Packaging (NEPP) Program
To be presented by A.Teverovsky at the NASA Electronic Parts and Packaging (NEPP) Electronics Technology Workshop, Greenbelt, MD, June 2017.
List of Acronyms
To be presented by A.Teverovsky at the NASA Electronic Parts and Packaging (NEPP) Electronics Technology Workshop, Greenbelt, MD, June 2017.
AF acceleration factor MLCC multilayer ceramic capacitorBME base metal electrode MOR modulus of ruptureDCL direct current leakage PME precious metal electrodeESR Equivalent series resistance QA quality assurance
FPGA field-programmable gate array RB reverse biasHALT highly accelerated life testing S&Q screening and qualification
HT High temperature SMT surface mount technologyHTS high temperature storage TC temperature cyclingIDC inter-digitated capacitor VH Vickers hardnessIFT Indentation Fracture Test WTC wet tantalum capacitor
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Outline Update on tantalum capacitors. Leakage currents, gas generation and case
deformation in wet tantalum capacitors. MnO2 chip capacitors:
• ESR degradation.• Acceleration factors for DCL degradation and failures.• Effect of moisture on degradation of reverse currents. Polymer capacitors. Future work.
Update on ceramic capacitors. Mechanical properties of MLCCs. Failures in BME capacitors with defects. Effect of cracking on degradation of MLCCs at HT. Future work.
To be presented by A.Teverovsky at the NASA Electronic Parts and Packaging (NEPP) Electronics Technology Workshop, Greenbelt, MD, June 2017.
3
Leakage Currents, Gas Generation and Case Deformation in Wets
To be presented by A.Teverovsky at the NASA Electronic Parts and Packaging (NEPP) Electronics Technology Workshop, Greenbelt, MD, June 2017.
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NEPP report (https://nepp.nasa.gov/) contains: Part I. Analysis of leakage currents; Part II. Gas generation, hermeticity, and pressure in the case. Part III. Electrolyte at the glass seal. Part IV. Deformation of cases in high capacitance value wet tantalum capacitors.
Risks of internal leaks: non-oxidized surfaces; corrosion of welds; excessive leakage currents and gas generation.
To reduce failures a special conditioning at HT is recommended.
WTCs with different types of internal seals
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E+2 1.E+3 1.E+4 1.E+5 1.E+6
curr
ent,
A
time, sec
DWG04005 240uF 125V
Anomalies in leakage currents indicate presence of defects
Leakage Currents, Gas Generation and Case Deformation in Wets, Cont’d
To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
5
Multiple (1650) transients did not cause case bulging likely due to H2 outdiffusion through tantalum case.
TC can result in irreversible lid deformation and excessive DCL. To assure reliable operation in vacuum, HTS testing at 150 ºC for
1000 hours is recommended. Glass seal protection in button case capacitors is less effective
compared to the cylinder case parts.
y = 4.2153e0.036x
0
500
1000
1500
2000
2500
3000
0 50 100 150 200
disp
lace
men
t, um
temperature, deg.C
HE3 SN5
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
600
700
800
0 100 200 300 400 500 600
tem
pera
ture
, deg
.C
disp
lace
men
t, um
time, min
HE3 SN5
displ, umtemp, C
Cracking of the seal after exposure to HT
Bulging of the case
ESR Degradation in MnO2 CapacitorsA report (https://nepp.nasa.gov/) includes analysis of environmental factors: vacuum, high temperature storage, temperature cycling, moisture, and soldering.
To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
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0
50
100
150
200
250
300
0 200 400 600 800 1000
ESR
, mO
hm
time, hr
HTS 150C CWR29FC686KBGA, DC0703, ESR_max=275 mohm
0
20
40
60
80
100
120
0 200 400 600 800 1000
ESR
, moh
m
time, hr
220uF 10V Mfr.B at 85C 85%RH
Most parametric ESR failures are due to insufficient margin to ESRlimit.MnO2 caps can withstand 1000 hr at 150 °C and at 85 °C/85% RH.AEC-Q200 requirements are much more severe compared to M55365.Compressive stresses after bake reduce delaminations and squeeze
microcracks in cathode layers resulting in reduction of ESR.Swelling of MC and stress relaxation in moisture have opposite effects.
Examples of ESR variations during HTS and humidity testing
Acceleration Factors for DCL Degradation and Failures
To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
7
A report (https://nepp.nasa.gov/) describes catastrophic and parametric failures in Ta capacitors, their mechanisms and AF.
Analysis showed that 5.5 < B < 10.3, 1.42 < Ea <1.66 eV. Parametric degradation is reversible and can be annealed at HT. The mechanism of degradation is attributed to migration of
oxygen vacancies in the dielectric with E ~1.1 eV.
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0 500 1000 1500 2000
curr
ent,
A
time, hr
6.8uF 25V Mfr.A at 125C, 16.6V
SN1 SN2SN3 SN4SN5 SN6Failure
Simulation of TTFs for 6.8uF 25V capacitors
time, hr
cumu
lative
prob
abilit
y, %
1.E+2 1.E+91.E+3 1.E+4 1.E+5 1.E+6 1.E+7 1.E+81
5
10
50
90
99
experimental data
calculation
125C, 16.6V
use conditions55C, 10V
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
init HALT125C35V
bake20hr175C
HALT145C25V
bake10hr175C
bake30hr175C
bake60hr175C
curr
ent@
25V
, 85C
, A
6.8uF 25V capacitors
−×= 1exp
VRVBAF test
V
−×−=
21
11expTTk
EAT aT
Kinetics of Moisture Sorption in MnO2 Capacitors
8To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
( ) ( )
−−−×−+= τ
DttCCCtC exp1)( minmaxmin DdtD ×
=6
2
Spd××
= ~γτ
-0.5
0.5
1.5
2.5
3.5
4.5
0.1 1 10 100 1000
∆C/C
min
, %
time, hr
Capacitors at 22C 85%RH after bake
CC1calcCC6calcMC1calc
10
10.1
10.2
10.3
10.4
0.1 1 10 100
capa
cita
nce,
uF
time, hr
10uF MLCCs at 125C
CC1
MC1
E = 0.5 eV
Ea =0.43eV
0.1
1
10
100
0.002 0.0025 0.003 0.0035 0.004
diffu
sion
del
ay, h
r
1/T, 1/K
CC1
CC6
MC1
MC
CC
Ea=0.36 eV
Ea= 0.33 eV
1
10
100
1000
0.002 0.0025 0.003 0.0035 0.004
char
acte
ristic
tim
e, h
r
1/T, 1/K
CC1CC6MC1
MC
CC
Slugs in tantalum chip capacitors can be used as moisture sensors. A model for C-tvariations has been developed. Bake-out times can be selected based on the characteristic times of the desorption process.
Moisture sorption can be characterized by two time constants
Effect of Moisture on Degradation of Reverse Currents in MnO2 Capacitors
9To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
0
5
10
15
20
25
30
35
0 200 400 600 800 1000 1200 1400 1600
curre
nt, m
A
time, hr
194D at RBS 5V, 75C
air
vacuum
194D effect of humidity at 22C and 4V RB
steady-state current, mA
cumu
lative
prob
abilit
y, %
1.E-2 101.E-1 11
5
10
50
90
99
7% RH
35% RH
85% RH
Degradation under RB strongly depends on presence of moisture in environments and preconditioning.
Oxygen vacancies play important role in formation of protonic species.
xOiO OHVOH +→+ ••• 22••• →++ O
xOO OHOVOH 22
RBS of 10uF 25V capacitors
Polymer Capacitors
10To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
Report “Evaluation of 10V chip polymer tantalum capacitors…” (https://nepp.nasa.gov/) describes issues with low-voltage parts.
6.0E-8 A/hr
1.4E-07 A/hr
1.0E-07 A/hr
0.0E+0
5.0E-6
1.0E-5
1.5E-5
2.0E-5
2.5E-5
3.0E-5
0 20 40 60 80 100 120 140 160
curr
ent,
A
time, hr
T530 330uF at 125C 10V
SN2
SN7
SN9 1
10
100
1000
0 2500 5000 7500 10000
ESR
, moh
m
time, hr
HTS at 100C
T510 330uF
T530 150uF
T525 220uF
0.0E+0
5.0E-5
1.0E-4
1.5E-4
2.0E-4
2.5E-4
3.0E-4
3.5E-4
0 200 400 600 800 1000
curre
nt, A
time, hr
220uF 10V at 85C, 10V
Parametric failures are likely to be major issues with polymer caps.QA system developed for MnO2 capacitors is not applicable.Unstable leakage currents that might be more significant in vacuum.Significant degradation of ESR during HTS.
Polymer Capacitors, Cont’d
11To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
One of the most intriguing problems: anomalous transients after HTS
Moisture plays an important role in the mechanism of transients.
Anomalies in long-term transient currents might be due to changes in the trap system of Ta2O5.
More analysis necessary.
1.E-7
1.E-6
1.E-5
1.E-4
1.E-3
1.E-2
1.E-1
-80 -60 -40 -20 0 20 40 60 80 100 120 140
curr
ent,
A
temperature, deg.C
22uF 25V virgin and after HTS at 25V 100sec
virgin
HTS
1.E-8
1.E-7
1.E-6
1.E-5
1.E-4
1.E-3
1.E-2
1.E-1
-80 -60 -40 -20 0 20 40 60 80 100 120 140
curr
ent,
A
temperature, deg.C
22uF 25V virgin and after 85C/85%RH at 25V 100sec
HUM
virgin
1.E-7
1.E-6
1.E-5
1.E-4
1.E-3
1 10 100 1000
curr
ent,
A
time, sec
22uF 25V HTS at 125C
SNu init 70SNu 23hr70SNu 95hr70SNu 311hr70SNu 1007hr70SNu 3009hr70SNu 4012hr70SNu 4996hr70
0
10
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60
0 10 20 30
Vol
tage
, V
time, sec
22uF 25V capacitors after 120hr HTS 125C or 85C/85%RH HTS 1mA
HTS 2mA
HTS 3mA
HTS 4mA
HTS 5mA
HTS 6mA
HTS 8mA
HTS 10mA
HTS 12mA
HTS 14mA
HUM 0.1mA
Future Work on Tantalum Capacitors
To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
MnO2 chip capacitors. Complete current tasks. Reliability acceleration factors for automotive grade capacitors.
Advanced wet capacitors. Effect of HT storage on performance and reliability. Evaluation of SMT wet tantalum capacitors.
Polymer capacitors. Degradation models for HTS and recommendations for S&Q.
Super-capacitors for space application.
12
Mechanical Properties of MLCCs
13To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
Can mechanical characteristics predict robustness of MLCCs under soldering stresses?
Report that is available at https://nepp.nasa.gov/ includes: Flexural Strength Testing of MLCCs. Vickers Hardness Testing. Indentation Fracture Test (IFT).
223bdFLMOR =
AEC-Q200-003
CDR35BX104AKUS, 0.1uF, 50V, size 1825, Mfr.C
MOR, MPa
cumu
lative
prob
abilit
y, %
40 4001001
5
10
50
90
99
initialactivated rosin fluxpolishedmoisture: 160hr, 85% RH, 22Cmoisture: 160hr, 85% RH, 22CTSD350 & moisture
10N5N 2.5N
47
4 7 19 13
58
8
0
100
200
300
400
500
600
1206 1210 1808 1812 1825 2225
char
acte
ristic
MO
R, M
Pa
case size
Effect of case size on MOR
PME
BME
3
Flexural strength method determines tensile strength at the surface. No substantial difference between mechanical characteristics of BME and PME
capacitors. Smaller size MLCCs have greater strength – Benefits of BMEs. Same size capacitors can be used for comparative analysis of the lots. Variations of MOR values from lot to lot might exceed 50%.
223bdFLMOR =Modulus of rupture
Vickers Hardness
14To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
In-situ VH measurements are possible using MLCCs with relatively thick cover plates. P should be low so the depth of the indentation is < 2x the thickness of the cover plate.
No significant difference between PME and BME capacitors. Improvements to reduce errors might allow for revealing
differences in lots.
Hardness is a resistance to indentation.
2854.1
DPVH ×
=
Vickers Hardness Test for PME and BME Capacitors
VH, GPa
cumu
lative
pro
babil
ity, %
7 128 9 10 111
5
10
50
99
BME
PME
90% confidence
y = 191.65x
0
100
200
300
400
500
600
700
0 1 2 3 4
D^2
, um
^2
load, N
Vickers test, LT capacitors
SN1
SN2
SN3
SN4
SN5
Indentation Fracture Test
15To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
IFT can provide useful information regarding robustness of capacitors under soldering conditions, but additional analysis is necessary.
Mechanical testing might be useful for selecting robust parts for manual soldering, but more work is necessary to reduce errors and select criteria.
For critical applications a combination of assembly simulation and special testing might be recommended.
Fracture Toughness: the ability of a material to withstand stresses in the presence of cracks.
IFT technique is the most controversial.
= 5.1
5.0
_ cP
VHEIFT MRξ
0
20
40
60
80
100
120
140
160
180
0 1 2 3 4 5
c^1.
5, (u
m)^
1.5
load, N
PME_L capacitors
PME_L1, 1.7
PME-L2, 1.32
PME_L3, 1.49
PME_L4, 1.20
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
PN 1 PN 2
Kc, M
pa_m
^0.5
PME_V capacitors
SN1 SN2 SN3 SN4 SN5
Failures in BME Capacitors with Defects
16To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
Migration of VO++ is enhanced either by increased E, as in case of
thinning of the dielectric, or by increased µ, as in case of cracks. Catastrophic failures occur when ΦB decreases to ΦBcr. For
capacitors having small, micrometer-size defects ΦBcr is low so catastrophic failures are unlikely.
In the range of typical HALT conditions voltage increases the probability of catastrophic failures to a greater degree compared to temperature. This might result in errors in AFs.
Thermal run-away model
),,(2Bddd ETJrI Φ××= πθRTTVI
dtdTC d
0−−×=×
Φ−=
kTE
kTEATJ sB
S
5.02/3 expexp βµ
17To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
Stretched exponential dependence of ΦB with time.In bulk: τV = 200 hr, (µV ~5×10-15 cm2/Vs)Along the crack: τc ~10 hr (µV ~10-13 cm2/Vs).
Model: accelerated migration of VO++ along the cracks.
Simulations are in reasonable agreement with experimental data.
−−×∆Φ=Φ
γ
τVBB
tt exp1)(
Vd
VV ×
×=
µτ
278.0
0
0.15
0.3
0.45
0.6
0.75
0.9
1.E-8
1.E-7
1.E-6
1.E-5
1.E-4
1.E-3
1.E-2
0.1 1 10 100 1000
∆ΦB,
eV
curre
nt, A
time, hrI defect free I defect 1I total def. 1 I defect 2I total def. 2 DFB_def 1 =0.45eVDFB_def 2 =0.55eV DFB =0.1eV
∆ΦBcr =0.54eV
Effect of Cracking on Degradation of MLCCs at HT
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0.1 1 10 100 1000
curre
nt, A
time, hr
virginfractured
0.33uF/50V at life test
cracks
virgin
Simulation of life testing
Future Work on Ceramic Capacitors
Evaluation of IDC capacitors used for FPGAs.
Comparative analysis of performance and reliability of BME and PME capacitors. Breakdown voltages. Analysis of failures in BME capacitors with defects. Express testing to determine reliability acceleration factors for BME
capacitors. Guidelines for selecting “auto” MLCCs for different project levels.
To be presented by Alexander Teverovsky at the 2017 NASA Electronics Parts and Packaging (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center, Greenbelt, MD, June 26-29, 2017.
18