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2N2218A-2N2219A2N2221A-2N2222A

January 1989

HIGH SPEED SWITCHES

The 2N2218A, 2N2219A, 2N2221A and 2N2222Aare silicon planar epitaxial NPN transistors in JedecTO-39 (for 2N2218A and 2N2219A) and in JedecTO-18 (for 2N2221A and 2N2222A) metal cases.They are designed for high-speed switching appli-cations at collector currents up to 500 mA, and fea-ture useful current gain over a wide range of collec-tor current, low leakage currents and low saturationvoltages.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VCBO Collector-base Voltage (I E = 0) 75 V

VCEO Collector-emitter Voltage (I B = 0) 40 V

VEB O Emitter-base Voltage (I C = 0) 6 V

IC Collector Current 0.8 A

P t o t Total Power Dissipation at T am b 25 Cfor 2N2218A and 2N2219Afor 2N2221A and 2N2222Aat T case 25 Cfor 2N2218A and 2N2219Afor 2N2221A and 2N2222A

0.80.5

31.8

WW

WW

T st g Storage Temperature 65 to 200 C

T j Junction Temperature 175 C

2N2218A/2N2219A approved to CECC50002-100, 2N2221A/2N2222A approved toCECC 50002-101 available on request.

DESCRIPTION

TO-39

INTERNAL SCHEMATIC DIAGRAM

TO-18

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ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICB O Collector Cutoff Current(IE = 0)

VCB = 60 VVCB = 60 V Tam b = 150 C

1010

nAA

ICE X Collector Cutoff Current(VBE = 3 V)

VCE = 60 V 10 nA

IE BO Emitter Cutoff Current(IC = 0)

VE B = 3 V 10 nA

IBE X Base Cutoff Current

(VBE = 3 V) VCE = 60 V 20 nA

V(BR) CBO Collector-base BreakdownVoltage (I E = 0)

IC = 10 A 75 V

V(BR) CEO * Collector-emitter BreakdownVoltage (I B = 0)

IC = 10 mA 40 V

V(BR) EBO Emittter-base BreakdownVoltage (I C = 0)

IE = 10 A 6 V

VCE ( sa t ) * Collector-emitter SaturationVoltage

IC = 150 mAIC = 500 mA

IB = 15 mAIB = 50 mA

0.31

VV

VBE ( sa t ) * Base-emitter SaturationVoltage

IC = 150 mAIC = 500 mA

IB = 15 mAIB = 50 mA

0.6 1.22

VV

h F E * DC Current Gain for 2N2218AI

C = 0.1 mA

IC = 1 mAIC = 10 mAIC = 150 mAIC = 500 mAIC = 150 mAIC = 10 mAT am b = 55 C

and 2N2221AV

CE = 10 V

VCE = 10 VVCE = 10 VVCE = 10 VVCE = 10 VVCE = 1 VVCE = 10 V

202535402520

15

120

h F E * DC Current Gain for 2N2219AIC = 0.1 mAIC = 1 mAIC = 10 mAIC = 150 mAIC = 500 mAIC = 150 mAIC = 10 mAT am b = 55 C

and 2N2222AVCE = 10 VVCE = 10 VVCE = 10 VVCE = 10 VVCE = 10 VVCE = 1 VVCE = 10 V

355075

1004050

35

300

* Pulsed : pulse duration = 300 s, duty cycle = 1 %.

THERMAL DATA

2N2218A2N2219A

2N2221A2N2222A

Rth j - c a seR th j-amb

Thermal Resistance Junction-caseThermal Resistance Junction-ambient

MaxMax

50 C/W187.5 C/W

83.3 C/W300 C/W

2N2218A-2N2219A-2N2221A-2N2222A

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ELECTRICAL CHARACTERISTICS (continued)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

h f e Small Signal Current Gain I C = 1 mA

f = 1 kHzfor 2N2218Afor 2N2219AIC = 10 mAf = 1 kHzfor 2N2218Afor 2N2219A

VCE = 10 V

and 2N2221Aand 2N2222A

VCE = 10 V

and 2N2221Aand 2N2222A

3050

5075

150300

300375

fT Transition F requency I C = 20 mAf = 100 MHzfor 2N2218Afor 2N2219A

VCE = 20 V

and 2N2221Aand 2N2222A

250300

MHzMHz

C EB O Emitter-base Capacitance I C = 0f = 100 kHz

VEB = 0.5 V 25 pF

C CBO Collector-base Capacitance I E = 0f = 100 kHz VCB = 10 V 8 pF

R e ( h i e ) Real Part of InputImpedance

IC = 20 mAf = 300 MHz

VCE = 20 V 60

NF Noise Figure I C = 100 AR 9 = 1 k

VCE = 10 Vf = 1 kHz

4 dB

h ie ** Input Impedance I C = 1 mAfor 2N2218Afor 2N2219AIC = 10 mAfor 2N2218Afor 2N2219A

VCE = 10 Vand 2N2221Aand 2N2222A

VCE = 10 Vand 2N2221Aand 2N2222A

12

0.20.25

3.58

11.25

h re ** Reverse Voltage Ratio I C = 1 mAfor 2N2218Afor 2N2219AIC = 10 mAfor 2N2218Afor 2N2219A

VCE = 10 Vand 2N2221Aand 2N2222A

VCE = 10 Vand 2N2221Aand 2N2222A

5x10 4

8x10 4

2.5x10 4

4x10 4

h o e ** Output Admittance I C = 1 mAfor 2N2218Afor 2N2219AIC = 10 mAfor 2N2218Afor 2N2219A

VCE = 10 Vand 2N2221Aand 2N2222A

VCE = 10 Vand 2N2221Aand 2N2222A

35

1025

1535

100200

SS

SS

t d *** Delay Time IC = 150 mAIB1 = 15 mA

VCC = 30 VVBB = 0.5 V

10 ns

t r*** Rise Time IC = 150 mA

IB1 = 15 mA

VCC = 30 V

VBB = 0.5 V 25 ns

t s *** Storage Time I C = 150 mAIB1 =

VCC = 30 V IB 2 = 15 mA

225 ns

t f*** Fall Time IC = 150 mAIB1 =

VCC = 30 V IB 2 = 15 mA

60 ns

r b b C b c Feedback Time Constant I C = 20 mAf = 31.8 MHz

VCE = 20 V 150 ps

** f = 1 kHz*** see test circuit.

2N2218A-2N2219A-2N2221A-2N2222A

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Contours of Constant Narrow Band Noise Figure. Switching Time vs. Collector Current.

Normalized DC Current Gain. Collector-emitter Saturation Voltage.

2N2218A-2N2219A-2N2221A-2N2222A

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Test Circuit fot t d, tr.

PULSE GENERATOR : TO OSCILLOSCOPE :tr 20 ns t r 5.0nsPW 200 ns Z IN < 100K ZIN = 50 CIN 12pF

Test Circuit fot t d, tr.

PULSE GENERATOR : TO OSCILLOSCOPE :PW 10 s t r < 5.0 nsZIN = 50 ZIN >100 K TC 5.0 ns C IN 12pF

2N2218A-2N2219A-2N2221A-2N2222A

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DIM.mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6 0.260

E 8.5 0.334

F 9.4 0.370

G 5.08 0.200

H 1.2 0.047

I 0.9 0.035

L 45o (typ.)

L

G

I

D A

F E

B

H

TO39 MECHANICAL DATA

P008B

2N2218A-2N2219A-2N2221A-2N2222A

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Nolicense is granted by implication or otherwiseunder any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentionedin this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponentsin life supportdevices or systemswithout expresswritten approval of SGS-THOMSON Microelectonics.

1994 SGS-THOMSON Microelectronics - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

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2N2218A-2N2219A-2N2221A-2N2222A

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