20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081U.3A

TELEPHONE: (973) 379-2822(212) 227-6008

FAX: (973) 3764060

2N3870 thru 2N3873 (SILICON)

2N3896 thru 2N3899

2N617I thru 2N6174

THYRISTORS

SILICON CONTROLLED RECTIFIERS

, . , designed for industrial and consumer applications such as powersupplies, battery chargers, temperature, motor, light and weldercontrols.

• Economical for a Wide Range of Uses• High Surge Current - IjSM " 350 Amp

• Practical Level Triggering and Holding Characteristics —10mA(Typ)<S>Tc-25°C

• Rugged Construction in Either Pressfit, Stud or IsolatedStud Package

THYRISTORSPNPN

35 AMPERES RMS100-600 VOLTS

CASE 174TO-203

2N3870thru

2N3873,

W tJILJ M

N.I Semi-Conductors reserves the right to change test conditions, parameter limits .-Mid package dimensions without noticeInlbrmation tiimished by NI Scmi-C'unductors is believed to be both accurate and reliable at the lime of going to press. However NISeini-L oiiilutturs .NSUMICS no responsibility tor ;my errors ur mnissitins discuvured in its use NJ Semi-C oildlKlurs uncournges.ii^ii mcrs in \M\\\l il.iia-.hccts ,irecurrcntbefore plncumii

MAXIMUM RATINGS

Riling

•Rtpctilivi Piik Rivrrti Blocking VoMtgt II)ITj • -40 10 »100°CI

1 1") Sin* Wtvt, 50 10 400 Hi, G(tl Optn2N3870, 2N3896, 2N61712M3871.2N3897, 2N61722N3872. 2N3898, 2N61732N3873. 2N3B99, 2N6174

'Non-fltcttitivt P«ik RtvtfMBlocking VoH*gtIi £ 50 mil

2N3870, 2N3899, 2N61712N3871.2N3897, 2N61722N3872, 2N3898, 2N61732N3873, 2N3899, 2M6174

'Forwtrd Currtnl AVG(Tc • -40 to »65°C)(•85°CI

'Pt«k Su'gt CurrintlOnt c/elt, 60 H«| (Tc • »6S°CI

Circuit FutingConudtritioni(Tj'-40lo»1000CIIt • 1.0 to 8.3 mil

•P«ik G«u Powtr

'Avt'iof Gilt Powt'

•Pi»k Foinna Gill Cu"*nt

Pfik G«l« Voltift

'Optrilmg Junction Ttmp«rituriRm9f

'StO'tot Timp«rtiurf R«na<

Stud Torgut 2N1896 thru JN38M• 2N617I thru 2N6174

Symbol

VORM-

VRSM

'TIAVI

"TSM

"

PGMPG(AVGI

IGFMVGM

TJ

T,t,

—

Valul

100200400600

150330660700

2211

350

435

20

0.5

20

10

-4010 »IOO

-4010*150

30

Unit

Volli

Voltl

Amp

Amp

A"

Wlttl

Witt

Amp

Voitioc

'C

in. lb.

•THERMAL CHARACTERISTICS

ChirMttriitk

Tht rm»i Rtmttncf , Junction to CtM2N3870 thru 2N3873. 2N3896 thru 2N38M

2N6171 thru 2N6174

Symbol

«JC

MM

0.91.0

Unit

°C/W

•lAdlttltl JIOIC Rifiltfrtd Otll.

'R«tlngi *pply (or itro or ncgttlv* git* volttg*. O«vlc»l »h«ll not h«v* • potltlv* billipplitd to th« g«tt concurrtntly with ( ntgttlvf pottntlll on th* mod*. Otvicti ihouldnot bt tilted with • conitant currint iourc« lor (orwtrd or r«v*r>« blocking ciptbllilyluch thtt tht voltiot ipplitd ixc««di th* rittd blocking volugt.

pw.iwol £>i-̂ -̂ xN 1 lySfa — ̂ 7 1

P^ »"""— 1-fj— ••"•••

in (°rn« i!',viii "•* iJ l II _!_[,„.

CASE 17B JliPHMll

2N3896 / -̂ =thru V*;1!*' S ™

2N3899 n5£

•ffl^ft„„'"' -ii- W 1 I

twf™r n ""ilUlooi CASE 236L J .' "»«

*,» ^^ 2N6171Jin — si^-wnwm thrui n» inruL .—&) 2N6174

ELECTRICAL CHARACTERISTICS

At Maximum Ratings Unless Otherwise Specified and at Indicated CaM Temperature (Tc)

CHARACTERISTIC SYMBOL

LIMITS

FOR ALL TYPESUnless Otherwise Specified

MIN. TYP. MAX.

UNITS

Peak Off-State Current:(Gate open, TQ = 100°C)

Forward Current (lQOM> at VD = VDROM !DOMReverse Current <IROM> »* VR * VRROM

2N3870, 2N3896, S6420A2N3871, 2N3897, S6420B IRQM2N3872, 2N3898, S642002N3873, 2N3899, S6420M,S6400N, S6410N,S6420N

Instantaneous On-State Voltage:i-r - 69 A (peak), TC = 25°C VT

iT » 100 A (peak), Tc • 25°C

DC Gate Trigger Voltage:VD * 12 V (dc), RL = 30 n, Tc a-400C VGT

VD = 12 V (dc), RL - 30 n, Tc = 26°CFor other case temperatures

DC Gate Trigger Current:VD « 12 V (dc), RL = 30 n, Tc - 40°CVD = 12 V(dc), RL=30n,T c = 25°CFor other case temperatures

Instantaneous Holding Current:Gate open,Tc = 25°CFor other case temperatures

0.20.250.3

0.35

2*2.5*3*

4"

mA

1.71.8S"2.1

1.5 3"2 '

4625

80*40 mA

0.5 30 70 mA

Gate Controlled Turn-On Time:(Delay Time + Rise Time)For VD = VOROM, IGT «= 200 mA, tr = 0.1 /js,IT = 30 A (peak), Tc * 25°C (See Fig. 12 & 14.! 1.2S

Circuit Commutated Turn-Off Time:

VD " VDROM' 'T * 1^ ^- Pulse deration-50/;s, dv/dt * 20 V//LIS, -di/dt

= -30 A/MS, IGT = 20° ™A. Tc" We(See Fig. 15.) 20 40

/is

Critical Rate of Rise of Off-State Voltage:VD~ ^DROM' exponential voltage rise,Gate open, Tr ~ 100°C (See Fig. 16.)

dv/dt10 100

Thermal Resistance, Junction-to-Case:Steady-State

Press-fit & stud typesIsolated-stud types

0.9'1

"C/W

•In accordance with JEDEC registration data filed for th* JGOEC (2N-Mri*t) tvptt.