2n3904 transistores npn prop. gral
TRANSCRIPT
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2N3904
Prelim. 7/00
LABSEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: [email protected] Website: http://www.semelab.co.uk
GENERAL PURPOSENPN TRANSISTOR
FOR HIGH RELIABILITYAPPLICATIONS
FEATURES SILICON PLANAR EPITAXIAL NPN
TRANSISTOR CECC SCREENING OPTIONS HIGH SPEED SATURATED SWITCHING
VCBO Collector Base VoltageVCEO Collector Emitter VoltageVEBO Emitter Base VoltageIC Collector CurrentPD Total Device Dissipation @ TA =25C
Derate above 25CRq
JA Thermal Resistance Junction AmbientTSTG , TJ Operating and Storage Temperature Range
60V40V6V
200mA350mW
3.33mW / C300C/W
55 to +175C
MECHANICAL DATADimensions in mm (inches)
TO-18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)
PIN 1 Emitter PIN 2 Base PIN 3 Collector
132
2.54 (0.100)Nom.
0.48 (0.019)0.41 (0.016)
dia.
5.84 (0.230)5.31 (0.209)4.95 (0.195)4.52 (0.178)
5.33
(0.21
0)4.
32 (0
.17
0)12
.7
(0.50
0)m
in.
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2N3904
Prelim. 7/00
LABSEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: [email protected] Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unittd Delay Timetr Rise Timets Storage Timetf Fall Time
ft Current Gain Bandwidth Product
Cob Output Capacitance
Cib Input Capacitance
hie Input Impedancehoe Output Admittancehre Voltage Feedback Ratiohfe Small Signal Current Gain
NF Noise Figure
300
4
8
1 101 40
0.5 8100 400
5
353520050
Parameter Test Conditions Min. Typ. Max. Unit
* Pulse Test: tp 300ms, d 2%.
40606
50500.20.3
0.65 0.850.95
4070100 3006030
IC = 1mA IB = 0IC = 10mA IE = 0IE = 10mA IC = 0VCE = 30VVEB = 3VIC = 10mA IB = 1mAIC = 50mA IB = 5mAIC = 10mA IB = 1mAIC = 50mA IB = 5mA
IC = 0.1mAIC = 1mA
VCE = 1V IC = 10mAIC = 50mAIC = 100mA
V(BR)CEO* Collector Emitter Breakdown VoltageV(BR)CBO Collector Base Breakdown VoltageV(BR)EBO Emitter Base Breakdown VoltageIBL Base Cut-off CurrentICEX Collector Emitter Cut-off Current
VCE(sat) Collector Emitter Saturation Voltage
VBE(sat)* Base Emitter Saturation Voltage
hFE* DC Current Gain
V
nA
V
V
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
VCE = 20V IC = 10mAf = 100MHzVCB = 5V IE = 0f = 1MHzVBE = 0.5V IC = 0f = 1MHz
VCE = 10VIC = 1mAf = 1kHz
VCE = 5V IC = 100mAf = 1kHz RS = 1kW
VCC = 3V VBE = 0.5VIC = 10mA IB1 = 1mAVCC = 3V VBE = 0.5VIB1 = IB2 = 1mA
MHz
pF
pF
kWmhmosx 10-4
dB
ns
SMALL SIGNAL CHARACTERISTICS (TA = 25C unless otherwise stated)
SWITCHING CHARACTERISTICS (TA = 25C unless otherwise stated)