7/27/2019 2SC5244A

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Power Transistors

2SC5244, 2SC5244ASilicon NPN triple diffusion mesa type

For horizontal deflection output

Features High breakdown voltage, and high reliability through the use of a

glass passivation layer

High-speed switching

Wide area of safe operation (ASO)

Absolute Maximum Ratings (TC=25C)

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

1500

1600

1500

1600

6

20

30

200

3.5

150

55 to +150

Unit

V

V

V

A

A

W

C

C

2SC5244

2SC5244A

2SC5244

2SC5244A

TC=25C

Ta=25C

Electrical Characteristics (TC=25C)

Parameter

Collector cutoff

current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Storage time

Fall time

Symbol

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

tstg

tf

Conditions

VCB= 1500V, IE= 0

VCB= 1600V, IE= 0

VEB= 5V, IC= 0

VCE= 5V, IC= 10A

IC= 10A, IB= 2.8A

IC= 10A, IB= 2.8A

VCE= 10V, IC= 0.1A, f = 0.5MHz

IC= 12A, IB1= 2.4A, IB2= 4.8A,

Resistance loaded

min

5

typ

3

1.5

0.12

max

1

1

50

12

3

1.5

2.5

0.2

Unit

mA

A

V

V

MHz

s

s

2SC5244

2SC5244A

Unit: mm

1:Base

2:Collector

3:Emitter

TOP3L Package

20.00.5

6.0

10.0

26.0

0.5

20.0

0

.5

1.5

2.5

SolderDip

10.90.5

1 2 3

2.00.3

3.00.3

1.00.2

5.00.3

3.0

4.0

2.0

5.450.3

0.60.2

1.5

2.7

0.3

1.52.0

3.30.2

3.0

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Power Transistors 2SC5244, 2SC5244A

PC Ta IC VCE hFE IC

VCE(sat) IC VBE(sat) IC Area of safe operation, horizontal operation ASO

Rth(t) t

0 16040 12080 14020 100600

240

200

160

120

80

40

220

180

140

100

60

20

(1)

(3)

(2)

(1) TC=Ta

(2) With a 100 100 2mm

Al heat sink

(3) Without heat sink

(PC=3.0W)

Ambient temperature Ta (C)

Collectorpowerdissipation

PC

(W)

0 121082 640

16

12

4

10

14

8

2

6

TC=25C

200mA

600mA

400mA

800mAIB=1000mA

Collector to emitter voltage VCE (V)

CollectorcurrentIC

(A)

0.01 0.1 1 100.1

1

10

100

1000

TC=100C

25C

25C

VCE=5V

Collector current IC (A)

Forwardcurrenttransferratio

hFE

0.1 1 10 1000.3 3 300.01

0.03

0.1

0.3

1

3

10

30

100IC/IB=3.5

100C25C

TC=25C

Collector current IC (A)

Collectorto

emittersaturationvoltage

VCE(sat)

(V)

0.1 1 10 1000.01

0.1

1

10

100IC/IB=3.5

TC=25C

25C100C

Collector current IC (A)

Basetoemittersaturationvoltage

VBE(sat)

(V)

0 20001600400 12008000

50

40

30

20

10

f=64kHz, TC=25C

Area of safe operation forthe single pulse load curvedue to discharge in the

high-voltage rectifier tubeduring horizontal operation