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2SD2673 General purpose amplification( 30V , 3A ) Datasheet l Outline Parameter Value SOT-346T SC-96 V CEO 30V I C 3A TSMT3 l Features l Inner circuit 1)A collector current is large. (3A) 2)V CE(sat) :max.250mV at I C =1.5A/I B =30mA l Application LOW FREQUENCY AMPLIFIER l Packaging specifications Part No. Package Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 2SD2673 SOT-346T (TSMT3) 2928 TL 180 8 3000 YZ www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150731 - Rev.002

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Page 1: 2SD2673 : Transistors - Rohmrohmfs.rohm.com/.../datasheet/discrete/transistor/bipolar/2sd2673.pdf · 2SD2673 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values

2SD2673General purpose amplification( 30V , 3A ) Datasheet

llOutline

Parameter Value   SOT-346T  

  SC-96  

VCEO 30V  

IC 3A  

TSMT3  

llFeatures llInner circuit1)A collector current is large. (3A)2)VCE(sat):max.250mV  at IC=1.5A/IB=30mA

llApplication

LOW FREQUENCY AMPLIFIER

llPackaging specifications                                            

Part No. Package Packagesize

Tapingcode

Reel size(mm)

Tape width(mm)

Basicorderingunit.(pcs)

Marking

2SD2673 SOT-346T(TSMT3)

2928 TL 180 8 3000 YZ

                                                                                         

www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150731 - Rev.002

Page 2: 2SD2673 : Transistors - Rohmrohmfs.rohm.com/.../datasheet/discrete/transistor/bipolar/2sd2673.pdf · 2SD2673 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values

2SD2673                                 Datasheet

llAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Values Unit

Collector-base voltage VCBO 30 V

Collector-emitter voltage VCEO 30 V

Emitter-base voltage VEBO 6 V

Collector currentIC 3 A

ICP*1 6 A

Power dissipationPD

*2 0.5 W

PD*3 1.0 W

Junction temperature Tj 150 ℃

Range of storage temperature Tstg -55 to +150 ℃

llElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

Collector-base breakdownvoltage BVCBO IC = 10μA 30 - - V

Collector-emitter breakdownvoltage BVCEO IC = 1mA 30 - - V

Emitter-base breakdown voltage BVEBO IE = 10μA 6 - - V

Collector cut-off current ICBO VCB = 30V - - 100 nA

Emitter cut-off current IEBO VEB = 6V - - 100 nA

Collector-emitter saturation voltage VCE(sat) IC = 1.5A, IB = 30mA - 120 250 mV

DC current gain hFE VCE = 2V, IC = 200mA 270 - 680 -

Transition frequency fT VCE = 2V, IE = -200mA, f = 100MHz

- 200 - MHz

Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz

- 40 - pF

*1 Pw=1ms Single pulse

*2 Each Terminal Mounted on a Reference Land

*3 Mounted on a ceramic board.(25×25×0.8mm)

                                                                                       

www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved. 2/6 20150731 - Rev.002

Page 3: 2SD2673 : Transistors - Rohmrohmfs.rohm.com/.../datasheet/discrete/transistor/bipolar/2sd2673.pdf · 2SD2673 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values

2SD2673       Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.1 Ground Emitter Propagation    Characteristics

Fig.2 Typical Output Characteristics

Fig.3 DC Current Gain vs. Collector    Current (I)

Fig.4 DC Current Gain vs. Collector    Current (II)

                                                                                           

www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved. 3/6 20150731 - Rev.002

Page 4: 2SD2673 : Transistors - Rohmrohmfs.rohm.com/.../datasheet/discrete/transistor/bipolar/2sd2673.pdf · 2SD2673 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values

2SD2673       Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.5 Collector-Emitter Saturation    Voltage vs. Collector Current (I)

Fig.6 Collector-Emitter Saturation    Voltage vs. Collector Current (II)

Fig.7 Base-Emitter Saturation Voltage     vs. Collector Current

Fig.8 Gain Bandwidth Product vs.    Emitter Current

                                                                                           

www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved. 4/6 20150731 - Rev.002

Page 5: 2SD2673 : Transistors - Rohmrohmfs.rohm.com/.../datasheet/discrete/transistor/bipolar/2sd2673.pdf · 2SD2673 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values

2SD2673       Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.9 Emitter Input Capacitance vs.    Emitter-Base Voltage    Collector Output Capacitance vs.    Collector-Base Voltage

Fig.10 Safe Operating Area

                                                                                           

www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved. 5/6 20150731 - Rev.002

Page 6: 2SD2673 : Transistors - Rohmrohmfs.rohm.com/.../datasheet/discrete/transistor/bipolar/2sd2673.pdf · 2SD2673 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values

2SD2673       Datasheet

llDimensions

                                                                                           

www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved. 6/6 20150731 - Rev.002

Page 7: 2SD2673 : Transistors - Rohmrohmfs.rohm.com/.../datasheet/discrete/transistor/bipolar/2sd2673.pdf · 2SD2673 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values