MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2487 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES

• Low On-Resistance

RDS (on) = 1.6 Ω (VGS = 10 V, ID = 4.0 A)

• Low Ciss Ciss = 2 100 pF TYP.

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 900 V

Gate to Source Voltage VGSS ±30 V

Drain Current (DC) ID (DC) ±8.0 A

Drain Current (pulse)* ID (pulse) ±20 A

Total Power Dissipation (Tc = 25 ˚C) PT1 140 W

Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

Single Avalanche Current** IAS 8.0 A

Single Avalanche Energy** EAS 264 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

2SK2487SWITCHING

N-CHANNEL POWER MOS FETINDUSTRIAL USE

Document No. D10283EJ1V0DS00 (1st edition)Date Published August 1995 PPrinted in Japan

PACKAGE DIMENSIONS

(in millimeter)

1.0±0.2

1 2 3

1. Gate2. Drain3. Source4. Fin (Drain)

MP-88

4

15.7 MAX. 3.2±0.2

2.8±0.10.6±0.12.2±0.2

5.45 5.45

4.7 MAX.1.51.

06.

0

7.0

19 M

IN.

20.0

±0.

23.

0±0.

2

4.5±

0.2

BodyDiode

Source

Drain

Gate

© 1995

DATA SHEET

2SK2487

2

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS (on) 1.1 1.6 VGS = 10 V, ID = 4.0 A

Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 3.0 VDS = 20 V, ID = 4.0 A

Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0

Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0

Input Capacitance Ciss 2 100 VDS = 10 V

Output Capacitance Coss 310 VGS = 0

Reverse Transfer Capacitance Crss 60 f = 1 MHz

Turn-On Delay Time td (on) 30 ID = 4.0 A

Rise Time tr 20 VGS = 10 V

Turn-Off Delay Time td (off) 130 VDD = 150 V

Fall Time tf 23 RG = 10 Ω

Total Gate Charge QG 65 ID = 8.0 A

Gate to Source Charge QGS 11 VDD = 450 V

Gate to Drain Charge QGD 29 VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 IF = 8.0 A, VGS = 0

Reverse Recovery Time trr 770 IF = 8.0 A, VGS = 0

Reverse Recovery Charge Qrr 5.0 di/dt = 50 A/µs

UNIT

Ω

V

S

µA

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

µC

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Test Circuit 3 Gate Charge

VGS = 20 - 0 VPG

RG = 25 Ω

50 Ω

D.U.T.L

VDD

Test Circuit 1 Avalanche Capability

PG. RG = 10 Ω

D.U.T.RL

VDD

Test Circuit 2 Switching Time

RG

PG.

IG = 2 mA

50 Ω

D.U.T.RL

VDD

IDVDD

IASVDS

BVDSS

Starting Tch

VGS

0

t = 1 usDuty Cycle ≤ 1 %

VGSWave Form

IDWave Form

VGS

ID

10 %

10 %

0

0

90 %

90 %

90 %

10 %

VGS (on)

ID

ton toff

td (on) tr td (off) tft

2SK2487

3

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

0.1

TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

TC - Case Temperature - ˚C

PT

- Tot

al P

ower

Dis

sipa

tion

- W

0 20 40 60 80 100 120 140 160

140

120

100

80

60

40

20

0.11

1

10

100

10 100 1 000

TC = 25 ˚CSingle Pulse

0 20 30 40

10

1.0

10

100 Pulsed

20

10

0

Pulsed

5 10 15

RDS(on) Lim

ited

Power Dissipation Limited

ID(DC)

ID(pulse)

PW = 100 sµ

1 ms10 ms

TA = –25 ˚C25 ˚C75 ˚C

125 ˚C

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

TC - Case Temperature - ˚C

dT -

Per

cent

age

of R

ated

Pow

er -

%

0 20 40 60 80 100 120 140 160

20

40

60

80

100

TA = –25 ˚C25 ˚C75 ˚C

125 ˚C

2SK2487

4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

rth(t

) - T

rans

ient

The

rmal

Res

ista

nce

- ˚C

/W

FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

ID - Drain Current - A

| yfs |

- For

war

d Tr

ansf

er A

dmitt

ance

- S

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

RD

S(o

n) -

Dra

in t

o S

ourc

e O

n-S

tate

Res

ista

nce

- Ω

0 10

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VG

S(o

ff) -

Gat

e to

Sou

rce

Cut

off

Vol

tage

- V

ID - Drain Current - A

RD

S(o

n) -

Dra

in t

o S

ourc

e O

n-S

tate

Res

ista

nce

- Ω

0.5

1.0

10

0.001

0.01

0.1

1

100

1 000

1 m 10 m 100 m 1 10 100 1 000 10

VDS = 20 VPulsed

1 0.1

1

10

100

10 100

1.0

20 30

Pulsed

1.0

10 100

PulsedVGS = 10 V

0

4

VDS = 10 VID = 1 mA

–50 0 50 100 1500

1

Single PulseTc = 25 ˚C

2.0

Rth(ch-a) = 41.7(˚C/W)

Rth(ch-c) = 0.89(˚C/W)

3

2

1

1.5

µ 100 µ

TA = –25 ˚C25 ˚C75 ˚C

125 ˚CID = 8 A

4 A1.6 A

2SK2487

5

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

RD

S(o

n) -

Dra

in t

o S

ourc

e O

n-S

tate

Res

ista

nce

- Ω

SOURCE TO DRAIN DIODEFORWARD VOLTAGE

VSD - Source to Drain Voltage - V

ISD -

Dio

de F

orw

ard

Cur

rent

- A

CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE

VDS - Drain to Source Voltage - V

Cis

s, C

oss,

Crs

s - C

apac

itanc

e - p

F

SWITCHING CHARACTERISTICS

ID - Drain Current - A

td(o

n), t

r, td

(off

), tf

- Sw

itchi

ng T

ime

- ns

1.00.1

0–50

1.0

0 50 100 150

VGS = 10 VID = 4 A

0.1

0

1

10

100

0.5

Pulsed

101.0

100

1 000

10 000

10 100 1 000

VGS = 0f = 1 MHz

10

100

1 000

1.0 10 100

VG

S -

Gat

e to

Sou

rce

Vol

tage

- V

REVERSE RECOVERY TIME vs.DRAIN CURRENT

ID - Drain Current - A

trr -

Rev

erse

Rec

over

y tim

e - n

s

di/dt = 50 A/ sVGS = 0

µ

100.1

100

1 000

1.0 10 100

1.0 1.5

VDD = 150 VVGS = 10 VRG = 10 Ω

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

Qg - Gate Charge - nC

VD

S -

Dra

in t

o S

ourc

e V

olta

ge -

V

0 20 40 60 80

200

400

600

800

2

4

6

8

10

12

14

16

0

2.0

3.0

4.0

Ciss

Crss

Coss

VDD = 450 V300 V150 V

VGS

VDS

tr

td(on)

tf

td(off)

VGS = 10 V

VGS = 0V

10 000

2SK2487

6

SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOAD

L - Inductive Load - H

IAS -

Sin

gle

Ava

lanc

he C

urre

nt -

ASINGLE AVALANCHE ENERGY DERATING FACTOR

Starting Tch - Starting Channel Temperature - ˚C

Ene

rgy

Der

atin

g Fa

ctor

- %

1.0

025

10

100

µ 1 m 1 m 10 m

VDD = 150 VVGS = 20 V → 0RG = 25 Ω

20

80

120

160

50 75 100 125 150

VDD = 150 VRG = 25 ΩVGS = 20 V → 0IAS 8.0 A

100

60

40

140

IAS = 8 AEAS = 264 mJ

100

≥

2SK2487

7

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

2SK2487

8

No part of this document may be copied or reproduced in any form or by any means without the prior writtenconsent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in thisdocument.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectualproperty rights of third parties by or arising from use of a device described herein or any other liability arisingfrom use of such device. No license, either express, implied or otherwise, is granted under any patents,copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safetymeasures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of eachdevice before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.

The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade,they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.

M4 94.11

[MEMO]

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