2sk3679 - 900v,9a

1

TO-220F

I tem Symbol Ratings UnitDrain-source voltage VDS 900

VDSX *5 900

Continuous drain current ID ±9

Pulsed drain current ID(puls] ±36

Gate-source voltage VGS ±30

Repetitive or non-repetitive IAR *2 9

Maximum Avalanche Energy EAS *1 287.7

Maximum Drain-Source dV/dt dVDS/dt *4 40

Peak Diode Recovery dV/dt dV/dt *3 5

Max. power dissipation PD Ta=25°C 2.16

Tc=25°C 95

Operating and storage Tch +150

temperature range Tstg

Isolation Voltage VISO *6 2

Electrical characteristics (Tc =25°C unless otherwise specified)

Thermalcharacteristics

2SK3679-01MRFUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET

FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof

ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings(Tc=25°C unless otherwise specified)

Item Symbol Test Conditions

Zero gate voltage drain current IDSSVDS=900V VGS=0V

VDS=720V VGS=0V VGS=±30V

ID=4.5A VGS=10V

ID=4.5A VDS=25V

VCC=600V ID=4.5A

VGS=10V

RGS=10 Ω

Min. Typ. Max. UnitsV

V

µA

nA

ΩS

pF

nC

A

V

µs

µC

ns

Min. Typ. Max. Units

Thermal resistanceRth(ch-c) channel to case

Rth(ch-a) channel to ambient

1.316

58.0

°C/W

°C/W

SymbolV(BR)DSS

VGS(th)

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QG

QGS

QGD

IAV

VSD

trrQrr

ItemDrain-source breakdown voltaget

Gate threshold voltage

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutanceInput capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time ton

Turn-off time toff

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Test ConditionsID= 250µA VGS=0V

ID= 250µA VDS=VGS

Tch=25°C

Tch=125°C

VDS=0V

VDS=25V

VGS=0V

f=1MHz

VCC=450V

ID=9A

VGS=10V

L=6.51mH Tch=25°C

IF=9A VGS=0V Tch=25°C

IF=9A VGS=0V-di/dt=100A/µs Tch=25°C

V

V

A

A

V

A

mJ

kV/µs

kV/µs

W

°C

°C

kVrms

900

3.0 5.0

25

250

100

1.22 1.58

5 10

1100 1650

140 210

8 12

25 38

12 18

50 75

12 18

31 46.5

4.5 8

11 16.5

9

0.90 1.50

3.2

15.5

-55 to +150

Outline Drawings [mm]

Equivalent circuit schematic

Super FAP-G Series

*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =<

Gate(G)

Source(S)

Drain(D)

200304

*4 VDS 900V *5 VGS=-30V *6 t=60sec, f=60Hz<=

*1 L=6.51mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C=<

2

Characteristics

2SK3679-01MR FUJI POWER MOSFET

0 5 10 15 200

2

4

6

8

10

12

14

20V

7.0V

10V8.0V

6.5V

6.0V

ID [A

]

VDS [V]

Typical Output CharacteristicsID=f(VDS):80 µs pulse test,Tch=25°C

VGS=5.5V

0 1 2 3 4 5 6 7 8 9 10

0.1

1

10

ID[A

]

VGS[V]

Typical Transfer CharacteristicID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C

0.1 1 10

1

10

gfs

[S]

ID [A]

Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C

0 2 4 6 8 10 12 141.1

1.2

1.3

1.4

1.5

1.6

1.7

7.0V

6.5V

R

DS

(on)

[ Ω

]

ID [A]

Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C

10V

20V

8.0V

6.0VVGS=5.5V

-50 -25 0 25 50 75 100 125 1500

1

2

3

4

5

RD

S(o

n)

[ Ω ]

Tch [°C]

typ.

max.

Drain-Source On-state ResistanceRDS(on)=f(Tch):ID=4.5A,VGS=10V

0 25 50 75 100 125 1500

25

50

75

100

125

150

Allowable Power DissipationPD=f(Tc)

PD

[W]

Tc [°C]

3


-50 -25 0 25 50 75 100 125 1500.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

max.

min.

Gate Threshold Voltage vs. TchVGS(th)=f(Tch):VDS=VGS,ID=250µA

VG

S(t

h) [V

]

Tch [°C]

0 5 10 15 20 25 30 35 40 450

2

4

6

8

10

12

14

Qg [nC]

Typical Gate Charge CharacteristicsVGS=f(Qg):ID=9A,Tch=25°C

VG

S [V

]

720V450V

Vcc= 180V

100

101

102

10-3

10-2

10-1

100

101

C [n

F]

VDS [V]

Typical CapacitanceC=f(VDS):VGS=0V,f=1MHz

Crss

Coss

Ciss

0.00 0.25 0.50 0.75 1.00 1.25 1.500.1

1

10

IF [A

]

VSD [V]

Typical Forward Characteristics of Reverse DiodeIF=f(VSD):80 µs pulse test,Tch=25°C

10-1

100

101

100

101

102

103

Typical Switching Characteristics vs. IDt=f(ID):Vcc=600V,VGS=10V,RG=10 Ω

td(on)

tr

tf

td(off)

t [ns

]

ID [A]

0 25 50 75 100 125 1500

100

200

300

400

500

600

700IAS

=4A

IAS

=9A

IAS

=6A

EA

S [m

J]

starting Tch [°C]

Maximum Avalanche Energy vs. starting TchE(AS)=f(starting Tch):Vcc=90V

4


http://www.fujielectric.co.jp/denshi/scd/

10-8

10-7

10-6

10-5

10-4

10-3

10-2

10-2

10-1

100

101

102

Single Pulse

Maximum Avalanche Current PulsewidthIAV

=f(tAV

):starting Tch=25°C,Vcc=90V

Ava

lan

che

Cu

rre

nt I

AV [

A]

tAV

[sec]

10-6

10-5

10-4

10-3

10-2

10-1

100

10-3

10-2

10-1

100

101

Maximum Transient Thermal ImpedanceZth(ch-c)=f(t):D=0

Zth

(ch

-c)

[°C

/W]

t [sec]

2sk3679 - 900v,9a

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