3 alp rotondaro smta2012 v2 cored lower tct than bga cored temp -40c to 100c at 1hr cycle time...
TRANSCRIPT
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Advanced Packaging
Antonio L. P. Rotondaro
Centro de Tecnologia da Informação Renato Archer
[email protected]++55-19-3746-6195
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Outline/Agenda
� Introduction
� More Than Moore Era
� Challenges
� 2.5D and 3D Technologies
� SMT Trends
� Q & A
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Looking Into the Future
“I think there is a world marketfor maybe five computers.”
Thomas Watson, chairman of IBM, 1943
“Computers in the future may weigh no more than 1.5 tons. ”
Popular Mechanics, 1949
“There is no reason anyone would want a computer in their home. ”
Ken Olsen, founder of DEC, 1977
“640K ought to be enough for anybody. ”
Bill Gates, 1981
“Prediction is difficult, especially about the future”
Yogi Berra
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Moore´s Law
� Number of components for Minimum Cost doubles/year
� 50 in 1965; 1000 in 1970; 65000 in 1975…
Gordon E. Moore, Electronics, Vol.38, No.8 (1965)
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Ongoing for 45 years...
Gordon E. Moore, Intel Seminar, (2005)
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Market Pull
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Advanced Packaging
� 3D Accelerates
� System-in-packaging (SiP) w/ stacking
� Package-on-package (PoP)
� Total package height (mm): 1.5 (2008) -> 1.2 (2012)
� Optical Accelerates
� Board, Module, Embedded -> Optics Ecosystem
� BW density (Gbps/cm2): 120 (2008) -> 400 (2012)
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More Than Moore Era
R. R. Tummala, IEEE Spectrum, p. 44, (2006)
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Packaging Technology Challenges
� Power Dissipation
� Thermal Issues
� Power Delivery
� Chip – Package – Interaction Crisis
� Larger Die + Organic Carrier + Pb-Free + Weak BEOL = CPI Crisis
� Bandwidth Demand
� I/O Density, Optical Interconnect, 3D Integration
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Chip Carriers
� Glass Ceramic MCM
� Lines/spaces (µm): 125/60 (2008) -> 100/55 (2012)
� Flip-chip pitch (µm): 200 (2008) -> 170 (2012)
� Si Interposer
� TSV pitch (µm): 150 (2008) -> 20 (2012)
� Wafer Thickness (µm): 100 (2008) -> 10 (2012)
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Interconnect & Assembly
� High Performance (Large Die, High I/O, High
Current)
� Pitch: 200µm Pb’d (2008) -> 185µm Pb-free (2012)
� Low Power (Small Die, Low I/O, Low Current)
� Pitch: 200µm Pb-free (2008) -> 125µm Pb-free (2012)
� Wire Bonding
� Bond pitch (µm): 110 (2008) -> 60 (2012)
� Wire diam (µm): Au/23 (2008) -> Au/15; Cu/19 (2012)
� BGA pitch (mm): 0.5 (2008) -> 0.3 (2012)
� Die thickness (µm): 60 (2008) -> 40 (2012)
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2.5D and 3D Technologies
� Bandwidth ☺
� Power ☺
� Power �
� Cooling �
� Testing �
� KGD ☺
� Integration ☺
J.U. Knickerbocker et al., ECTC2012, pg.1068 (2012)
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Terabit/sec 48-channel Optochip
� 20 Gb/s/ch
F.E. Doany et al., ECTC2012, pg.1499 (2012)
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Coreless Substrate� Low z-height for mobile dev
� 4-4-4 cored vs 6+1 coreless
� 1.088mm vs 0.311mm
� Removal of PTH
� Removal of die side caps
M. Manusharow, et al., ECTC2012, pg.892 (2012)
� Re-design and optimization of the Power Distribution
� Total Copper thickness reduction
� Comparable IO performance
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Solder Grid Array (SGA) vs BGA
� SGA by solder paste printing only
� BGA: h = 195µm
� SGA: h = 110µm
� Pitch: 0.5 mm
M.M Hossain, et al., ECTC2012, pg.43 (2012)
� SGA cored lower TCT than BGA cored
� Temp -40C to 100C at 1hr cycle time
� Solder Joint issues
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Process Optimization
� Pb-Free -> Increase in reflow temp
� Reduced Yield margin
� Increase in paste volume
� Controlled by stencil opening
� Uniform collapse and good solder joint
� Reflow atmosphere
� N2 promotes wetting by reducing surface tension and prevents oxidation
� Coreless has higher reliability due to lower
effective shear strain
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Potential of 3D IC Integration
C.-J. Zhan, et al., ECTC2012, pg.548 (2012)
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Antonio L. P. Rotondaro, Ph.D.
Centro de Tecnologia da Informação Renato Archer
[email protected]++55-19-3746-6195
Thank You!
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Boards & Interconnect
� Drilled via aspect ratio: 17 (2008) -> 21 (2012)
� Effective dielectric loss: 0.010 (2008) -> 0.005
(2012)
� BGA via pitch (mm): 1.0 (2008) -> 0.5 (2012) @
>900 I/O
� Pb-free
� Optics with embedded passives