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300V Ultra Junction X3-Class HiPerFET™ Power MOSFETs

IXYS now part of Littelfuse

April 2018

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Product Line Introduction (26A – 210A) Featuring benchmark Figure of Merit (on-resistance x gate charge)

Developed using a charge compensation principle and proprietary process technology

Best-in-class Figure of Merit (on-state resistance times gate charge)

Fast recovery body diodes

dv/dt and avalanche ruggedness

Highest efficiencies

High power densities

Easy to design in

Available in international standard packages: TO-3P, TO-220 (overmolded or standard), TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268HV, SOT-227

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Key Technology AdvantagesUltra Junction Technology (combination of charge compensation principle and IXYS process technology)

Benchmark Figure of Merit (RDS(on) x Qg) Low conduction and switching losses Lowest on-state resistances in industry (5.5mΩ in TO-264, 4.6mΩ in SOT-227)

Fast recovery body diode

Low reverse recovery charge QRM and time trr

Able to achieve high efficiency and avoid device failure by removing all leftover energies during high-speed switching

Avalanche and dv/dt ruggedness

Superior avalanche capability Peak diode dv/dt recovery up to 20V/ns Reduces the number of snubbers required

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Available PartsPart Number VDSS

(V)

ID25

(A)

RDS(on)

max.(mΩ)

Qg(on)

typ.(nC)

trr

typ.(ns)

RthJC

max.(°C/W)

Package type

IXFA26N30X3 300 26 66 22 105 0.73 TO-263

IXFP26N30X3 26 66 22 105 0.73 TO-220

IXFY26N30X3 26 66 22 105 0.73 TO-252

IXFA38N30X3 38 50 35 90 0.52 TO-263

IXFP38N30X3 38 50 35 90 0.52 TO-220

IXFP38N30X3M 38 50 35 90 3.7 OVERMOLDED TO-220

IXFA56N30X3 56 27 56 115 0.39 TO-263

IXFH56N30X3 56 27 56 115 0.39 TO-247

IXFP56N30X3 56 27 56 115 0.39 TO-220

IXFP56N30X3M 56 27 56 115 3.5 OVERMOLDED TO-220

IXFA72N30X3 72 19 82 100 0.32 TO-263

IXFH72N30X3 72 19 82 100 0.32 TO-247

IXFP72N30X3 72 19 82 100 0.32 TO-220

IXFP72N30X3M 72 19 82 100 3.5 OVERMOLDED TO-220

IXFQ72N30X3 72 19 82 100 0.32 TO-3P

IXFH100N30X3 100 13.5 122 130 0.26 TO-247

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Available PartsPart Number VDSS

(V)

ID25

(A)

RDS(on)

max.(mΩ)

Qg(on)

typ.(nC)

trr

typ.(ns)

RthJC

max.(°C/W)

Package type

IXFT100N30X3HV 300 100 13.5 122 130 0.26 TO-268HV

IXFH120N30X3 120 11 170 145 0.17 TO-247

IXFT120N30X3HV 120 11 170 145 0.17 TO-268HV

IXFH150N30X3 150 8.3 254 167 0.14 TO-247

IXFK150N30X3 150 8.3 254 167 0.14 TO-264

IXFT150N30X3HV 150 8.3 254 167 0.14 TO-268HV

IXFK210N30X3 210 5.5 375 190 0.1 TO-264

IXFX210N30X3 210 5.5 375 190 0.1 PLUS247

IXFN210N30X3 210 4.6 375 190 0.18 SOT-227

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Applications

Solar micro-inverter

Half-bridge Class-D audio amplifier

Brushed DC motor drive

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Nomenclature

IX F K 210 N 30 X3

3rd Generation Ultra Junction Technology

Voltage rating, 300V

N-channel MOSFET

Current rating, 210A

Package type, TO-264

HiPerFET™ MOSFET

IXYS