37th annual international nuclear and space radiation...

3 7 t h A n n u a l I n t e r n a t i o n a l

NUCLEAR AND SPACE RADIATION EFFECTS

CONFERENCE

S p o n s o r e d by I E E E / N P S S R a d i a t i o n E f f e c t s C o m m i t t e e

S u p p o r t e d b y

D e f e n s e T h r e a t R e d u c t i o n A g e n c y S a n d i a N a t i o n a l L a b o r a t o r i e s

A i r Fo r c e R e s e a r c h L a b o r a t o r y J e t P r o p u l s i o n L a b o r a t o r y N A S A - G o d d a r d

S I LV E R L E G AC Y

R E N O, N E VA D A

J U LY 2 4 - 2 8 , 2 0 0 0

Conference FacilitiesConference Facilities

Lower Level

Main Level

Exhibits

Expo A Expo B Expo C

Registration andRefreshments

BronzeCatering Silver Gold Platinum

Escalators

Elevator

Elevator

Stairs

Men

Wom

en

Silver Baron Ballrooms andMeeting Rooms

A B C D E

4th Street

5th Street

Center Street

Virginia Street

Sierra Street

West Street Silver Legacy

Casinoand

ConferenceRooms

City CenterPavilion

NSRECExhibits

Entrance

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Pantry

Office

ScheduleSchedule

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Time Monday Tuesday Wednesday Thursday FridayJuly 24 July 25 July 26 July 27 July 28

Time Monday Tuesday Wednesday Thursday FridayJuly 24 July 25 July 26 July 27 July 28

7:157:30

8:15

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9:30

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[7:30] Continental BreakfastExpo Hall Pre-Function Area

[7:30] Continental BreakfastExpo Hall Pre-Function Area

[7:15] Continental BreakfastCity Center Pavilion [7:30] Continental Breakfast

Expo Hall Pre-Function Area[7:30] Continental BreakfastExpo Hall Pre-Function Area

[8:15] Short CourseIntroductionLewis M. CohnExposition Hall B and C

[8:30] PerformanceCharacterization ofWideband DigitalOptical Data TransferSystems for Use in theSpace RadiationEnvironmentRobert A. Reed

[10:00] Break

[10:30] Photonic Deviceswith Complex andMultiple Failure ModesAllan H. Johnston

[12:00] Short Course Lunch

[1:15] Radiation EffectsTesting of Mixed-SignalMicroelectronicsH. Jake Tausch, Jr.

[2:45] Break

[3:15] Radiation EffectsTesting of ProgrammableLogic DevicesLee F. Hoffmann

[4:45] Wrap-up

[5:00] Exam (for studentsrequesting CEU credit only)

[5:30] End of short course

[7:00 to 10:00] Conference Reception Nevada NightsExposition Hall

[8:15] ConferenceOpeningExposition Hall B and C

[8:45] Session A Isolation Technologies

[1:15] Session C Commercial Space Systems

[11:40] Industrial Exhibits LunchCity Center Pavilion

[2:30] BreakCity Center Pavilion

[3:00] Session D Basic Mechanisms

[10:10] Break

[10:30] Session B Space and TerrestrialEnvironments

[5:30] End of Session

[8:15] Invited TalkNevada MiningMr. Russ Fields

[9:15] Session E Hardness Assurance

[9:55] BreakCity Center Pavilion

[10:30] Session F Single Event Effects, Devicesand Integrated Circuits

[11:45] Lunch

[1:15] Session G Dosimetry and Facilities


[2:10] Poster SessionPoster Presentation and BreakExposition Hall A

[5:15 to 11:00] Conference SocialParty on the Ponderosa

[8:15] Invited TalkSpace MedicineDr. Jeffrey Jones

[8:15] Invited TalkThe Promise of SmallDr. Daniel Hastings

[9:15] Session H Photonic Devices andIntegrated Circuits

[9:15] Session J Single Event Effects,Mechanisms and Modeling

[10:10] Break

[10:30] Session H (continued)

[12:10] Lunch

[1:45] Session I (continued)

[2:30] Data WorkshopPoster Presentation and BreakSilver Baron Ballroom A


[5:45 to 7:15] RadiationEffects Committee Open MeetingExposition Hall B and C

[10:10] Break

[10:30] Session J (continued)

[12:30] End of Conference

[6:00 to 10:00] Industrial Exhibit ReceptionCity Center Pavilion

[11:15] Session I Devices and IntegratedCircuits

ContentsContents

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Chairman’s Invitation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1Short Course Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2Short Course . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Course Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Performance Characterization of Wideband Digital Optical Data Transfer Systems for Use in the Space Radiation Environment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5Photonic Devices with Complex and Multiple Failure Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Radiation Effects Testing of Mixed-Signal Microelectronics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Radiation Effects Testing of Programmable Logic Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Technical Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Technical Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Invited Speakers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Late-news Papers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Tuesday, July 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Session A - Isolation Technologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Session B - Space and Terrestrial Environments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Session C - Commercial Space Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Session D - Basic Mechanisms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Wednesday, July 26 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Invited Talk - Nevada Mining . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Session E - Hardness Assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Session F - Single Event Effects, Devices and Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Session G - Dosimetry and Facilities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Poster Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Thursday, July 27 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Invited Talk - Space Medicine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Session H - Photonic Devices and Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Session I - Devices and Integrated Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Data Workshop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Friday, July 28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Invited Talk - The Promise of Small . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Session J - Single Event Effects, Mechanisms and Modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

RESG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36News from the Radiation Effects Steering Group (RESG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Awards. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 381999 NSREC Awards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38IEEE Fellow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 391999 Radiation Effects Award . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Industrial Exhibits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40Conference Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Rooms for Side Meetings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42Messages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42Continental Breakfast and Coffee Breaks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42Radiation Effects Committee Open Meeting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Registration and Travel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43Conference Registration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43Registration Cancellation Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43Hotel Reservations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44Transportation and Directions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

2000 IEEE NSREC and Short Course Registration Form. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 472000 IEEE NSREC Activities Registration Form . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49Social Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51Companion Events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53Local Activities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

Weather and Clothing; Child Care . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 582000 Conference Committee . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59Official Reviewers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60Radiation Effects Steering Group . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 612001 Announcement and First Call for Papers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Chairman’s InvitationChairman’s Invitation

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On behalf of the NPSS Radiation Effects Committee, it is my pleasure to invite you to attend the 37th Annual International Conference on Nuclear and Space RadiationEffects (NSREC) to be held July 24-28, 2000 at the Silver Legacy Resort and Casino,Reno, Nevada. This conference is one of the premier international symposia on radiation effects in electronic materials, devices, circuits and systems. The 2000Conference will continue the tradition of previous NSRE Conferences by offering anoutstanding technical program, a one-day Short Course preceding the technical program, a Radiation Effects Data Workshop, and an Industrial Exhibit. We expectattendance by engineers, scientists, managers, and other interested persons frommany nations. Highlights of the conference are given below and more completedetails are provided in this brochure. Additional conference information can beobtained at www.nsrec.com.

Reno is located about 220 miles northeast of Sacramento and 450 miles northwest ofLas Vegas, near Lake Tahoe. The Reno area offers many recreational opportunities aswell as museums, rodeos, a national bowling center and, of course, casinos.

The technical Program Chairman, Art Campbell (Naval Research Laboratory), andhis program committee, have assembled a very strong program of contributedpapers. These papers have been organized into ten sessions of oral presentations, aposter session and a Radiation Effects Data Workshop. In addition, there will bethree interesting and informative invited talks. A new innovation for this year’s con-ference is the acceptance of summaries by email and the opportunity to present oralpapers using computer graphics.

The theme of this year’s Short Course, organized by Lew Cohn (Defense ThreatReduction Agency), is Radiation Testing Challenges for the New Millennium. TheShort Course will address radiation response testing issues for wideband digital optical data transfer systems, photonic devices and circuits, mixed signal microelec-tronics, and programmable logic devices. The Short Course is scheduled for Monday,July 24.

Thursday afternoon will feature a Radiation Effects Data Workshop, organized byJim Kinnison (Johns Hopkins Applied Physics Lab), consisting of papers emphasiz-ing radiation-effects data on electronic devices, circuit and systems and descriptionsof simulation and radiation test facilities. An Industrial Exhibit on Tuesday andWednesday, organized by Kate Hall Fitzgerald (Lockheed Martin Space Electronicsand Communications), will provide an opportunity for discussions between confer-ence attendees and exhibitors on the latest in radiation-hardened microelectronics,radiation analysis and testing services, simulation tools, and radiation test facilitiesand test equipment. The Industrial Exhibit will be held in the Pavilion, adjacent tothe Silver Legacy.

A variety of entertaining social events have been planned by Local ArrangementsChairman Steve Clark (Air Force Research Laboratory) and his assistant Jeff Black(Mission Research Corporation). The highlight of the social program will be theWednesday evening social, which will be held at the Ponderosa Ranch next to LakeTahoe. All of the Ponderosa attractions will be open and you will be treated to a bar-becue buffet. The companion events will include a trip to historic Virginia City, anearly 1900s fashion show at the Silver Legacy Comedy Club and a cruise aroundLake Tahoe on the M. S. Dixie Paddle Boat. The Monday night social will be held inthe Silver Legacy Exhibition Hall next to the registration area.

The 2000 NSRE Conference Committee looks forward to seeing you in Reno. Thetechnical activities will be outstanding and the social program memorable.

"Welcome to Reno and NSREC 2000.We have an outstanding committeewhich has assembled an excellent tech-nical program and an exciting lineupof social events. Enjoy your week in‘The Biggest Little City in theWorld’."

Ron PeaseGeneral Chairman

Short Course ProgramShort Course Program

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REGISTRATION/CONTINENTAL BREAKFAST

SHORT COURSE INTRODUCTIONLewis M. CohnDefense Threat Reduction Agency

PERFORMANCE CHARACTERIZATION OF WIDEBANDDIGITAL OPTICAL DATA TRANSFER SYSTEMS FOR USEIN THE SPACE RADIATION ENVIRONMENTRobert A. ReedNASA-Goddard Space Flight Center

BREAK

PHOTONIC DEVICES WITH COMPLEX AND MULTIPLEFAILURE MODESAllan H. JohnstonJet Propulsion Laboratory

SHORT COURSE LUNCHEON

RADIATION EFFECTS TESTING OF MIXED-SIGNALMICROELECTRONICSH. Jake Tausch, Jr.Mission Research Corporation

BREAK

RADIATION EFFECTS TESTING OF PROGRAMMABLELOGIC DEVICESLee F. HoffmannHoneywell Space Systems

WRAP-UP

EXAM (only for students requesting CEU credit)

END OF SHORT COURSE

7:30 AM

8:15 AM

8:30 AM

10:00 AM

10:30 AM

12:00 PM

1:15 PM

2:45 PM

3:15 PM

4:45 PM

5:00 PM

5:30 PM

RADIATION TESTING CHALLENGES FOR THE NEW MILLENNIUM

EXPOSITION HALL B AND C - MONDAY, JULY 24

Short CourseShort Course

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COURSE DESCRIPTION

The rapid and continuing evolution of microelectronics and photonics technologyhas made possible near-revolutionary advancements in both satellite and missile sys-tem performance capabilities. We are now entering an era where we can envisionswarms of micro-satellites circling the earth or totally autonomous long-lived mis-sions probing the galaxies all made possible through the use of modern electronics.The use of these advanced technologies will provide unprecedented capability tomonitor the earth’s resources, predict weather patterns, perform peacekeeping mis-sions, support instant communications between any areas of the planet and supportother yet to be conceived missions to serve mankind.

However, the benefits to be derived through the use of these advanced microelec-tronics and photonics comes with a number of challenges. One of the foremost ofthese challenges is the development of technically and cost effective radiation charac-terization and test methods to support the use of these technologies for long livedspace missions and other applications where easy replacement is not an option. Theimpact of our ability to unambiguously determine the long term performance of acomplex circuit or subsystem in a radiation environment will have a pervasive effecton system cost and performance, since this information will influence part selection,determine the design margins to be invoked, the level and the complexity of the test-ing to be accomplished and set boundaries on overall system performance. Thus, itis imperative that we be able to identify and understand the issues and problemsinvolved with the radiation testing of modern electronic and photonic circuits andsubsystems. The topics covered in this course will address many of the issues relatedto the use of existing test methods and the development and implementation of testand characterization strategies for both complex electronic and photonic circuits andsubsystems.

Lew Cohn , the 2000 NSREC Short Course Chairperson, has assembled a team ofexperts to address the issues of radiation testing and characterization. The instruc-tors for this year's Short Course are Dr. Robert Reed of NASA-Goddard Space FlightCenter, Mr. Allan Johnston of Jet Propulsion Laboratory, Mr. Jake Tausch of MRC andMr. Lee Hoffman of the Honeywell Space Systems. The four short course segmentswill be one-hour and fifteen minutes in duration, with a fifteen minute question-and-answer period at the end of each segment. A luncheon will be provided for all regis-tered attendees.

Short CourseShort Course

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CONTINUING EDUCATIONUNITS (CEUs)

As in previous years successful completion of the Short Course will earn an attendee0.6 CEUs endorsed by the IEEE and the International Association for ContinuingEducation and Training (IACET). The IEEE is an authorized CEU sponsor member ofthe IACET. IEEE guidelines for offering CEU credits will be followed. Thus, to qualify for CEU credit a person must be a registered attendee of the Short Course andpass a written examination with a score of 75% or more. The examination will beprovided immediately after the last segment of the Short Course, be open book, andconsist of about 20 multiple choice questions based on the material presented at theShort Course. A certificate of completion will be mailed to all who qualify.

SHORT COURSE CHAIRMAN Lewis M. Cohn received his B.S. and M.S. Degrees in Electrical Engineering in 1965and 1970 from the Milwaukee School of Engineering and Syracuse University respec-tively. Since 1985 he has been a program manager at the Defense Threat ReductionAgency (formally Defense Nuclear Agency) and has been involved in a variety ofefforts to develop and demonstrate technology to radiation harden microelectronicsand devices and semiconductor materials. Prior to his assignment to DTRA heserved as a nuclear engineer in the Naval Sea Systems Command Naval ReactorsGroup. Mr. Cohn has also worked as a design engineer at both General ElectricHeavy Military Electronics Systems and Rockwell International. Mr. Cohn has previ-ously performed a number of functions in conjunction with the NSREC includingchairing Poster, Workshop and Hardness Assurance Sessions and Awards Committeeparticipation. Mr. Cohn has been involved with the publication and presentation ofover 10 papers concerning the effects of radiation on microelectronics.

Lewis M. Cohn

Short Course MondayShort Course Monday

5

Robert Reed will present a discussion of the issues involved concerning the use ofoptical link systems, the impact of radiation on the system components, the responseof the subsystem to various radiation environments and the challenges associatedwith the testing and characterization of the radiation response of these subsystems.As we shall see one must take a holistic approach when dealing with such technolo-gy to ensure that a valid understanding of the radiation degraded performance isascertained.

PERFORMANCE CHARACTERIZATION OF WIDEBAND DIGITALOPTICAL DATA TRANSFER SYSTEMS FOR USE IN THE SPACEENVIRONMENT

Introduction

Brief Summary of the Radiation Environments■ Trapped Radiation Environment■ Transient Radiation Environment

The Optical Link System■ Components Used in Optical Links■ Examples of Optical Link System Configurations■ Monitoring Optical System Performance

Radiation Effect Concerns for Optical Components■ Transmitters■ Detectors■ Optical Coupling Media, Lenses, Optical Fibers, Wavelength Division

Multiplexors and Connectors■ High Speed Support Electronics

Optical System Response to Space Radiation Environments■ System Level Testing■ System Level Assessment■ Mitigation Approaches■ Predicting On-Orbit Performance■ On-Orbit Flight Data

A Look at the Future: Emerging Technologies■ Emerging Optical Data Links■ Emerging Transmitters, Detectors and Fibers■ High Speed Microelectronic Technologies, e.g. SiGe, GaAs, SOI■ Free Space Optical Interconnects

Conclusions

PERFORMANCE CHARACTERIZATION OF WIDEBANDDIGITAL OPTICAL DATA TRANSFER SYSTEMS FOR USE IN THE SPACE RADIATION ENVIRONMENTRobert A. ReedNASA-Goddard Space Flight Center

Robert A. Reed received his B.S. inPhysics from East Tennessee StateUniversity in 1990 and his M.S. andPh.D. in Physics from ClemsonUniversity in 1993 and 1994,respectively. After completion ofhis Ph.D. he worked as a post-doc-toral fellow at the Naval ResearchLaboratory and later worked forHughes Space and Communica-tion. He is currently a researchphysicist at NASA-Goddard SpaceFlight Center where he supportsNASA space flight and researchprograms. His radiation effectsresearch activities include topicssuch as single event effect (SEE)basic mechanisms, SEE and dis-placement damage effects in pho-tonic components and systems, andspace system on-orbit performanceanalysis and prediction techniques.He has published over 30 paperson radiation effects on microelec-tronic and photonic devices andsystems.


6

PHOTONIC DEVICES WITH COMPLEX ANDMULTIPLE FAILURE MODESAllan H. JohnstonJet Propulsion Laboratory

Allan H. Johnston received B.S.and M.S. degrees in physics in 1963and 1983 from the University ofWashington in Seattle. He joinedBoeing Aerospace Company in1965 where he worked on radiationeffects in microelectronics andoptoelectronics for military andspace systems. In 1992 he joinedthe Jet Propulsion Laboratory asradiation effects Group Leader,where he directs research and test-ing activities related to NASAspace projects. His research inter-ests include total dose effects inbipolar and MOS devices, theeffects of device scaling on single-event effects, radiation effects onoptoelectronic devices, and radia-tion-induced latchup. Allan is theauthor or coauthor of more than 60refereed publications. He hasserved as Assistant Guest Editor,Local Arrangements Chair, AwardsChair, Short Course Instructor,Short Course Organizer, andTechnical Program Chair for theIEEE NSREC. He has also servedas member-at-large, and is current-ly the secretary of the RadiationEffects Steering Group. Allanreceived the Distinguished PosterPaper award for the 1987 NSREC,and the Outstanding Paper Awardfor the 1999 NSREC.

Allan Johnston will provide a discussion of the issues involved with the radiation testand characterization of a variety of photonic devices that are now used (or being contemplated for use) in a number of satellite systems. The device and technologytypes to be addressed will include optocouplers, light emitting diodes, optical silicondetectors, optical fiber systems and other novel device structures and technologies.An overview of the radiation environments, as pertaining to these technologies, optoelectronics fundamentals and testing issues will be covered.

PHOTONIC DEVICES WITH MULTIPLE AND COMPLEX FAILURE MODES

Introduction

Overview of Radiation Environments ■ Proton and Electron Mix■ Ionization and Displacement Damage■ Energy Dependence■ Test Energies■ Effective Fluence

Radiation Effects in Devices■ Lifetime Damage, Carrier Removal, Transients

Device Test and Characterization Considerations■ Displacement Damage■ Carrier Removal■ Damage Stability■ Light Emission and Absorption

Light Emitting Diodes Test and Characterization Considerations■ LEDs, Laser Diodes, VCSELs

Detectors Test and Characterization Considerations■ Silicon Diodes■ Phototransistors■ PIN Diodes■ III-V Detectors■ IR Detectors

Optocouplers Test and Characterization Considerations■ Digital Optocouplers: Degradation Mechanisms, Characterization Methods■ Linear Optocouplers: Degradation Mechanisms, Characterization Methods

Other Optical Devices Test and Characterization Considerations■ Solar Cells and CCDs

Conclusions


7

Jake Tausch will address the issues and problems associated with the radiation test-ing of mixed-signal microelectronics with specific emphasis on analog-to-digital con-verter circuits. The discussion will include an overview of radiation effects as theypertain to mixed-signal technologies, general testing issues and testing techniquesappropriate to this ubiquitous circuit type.

RADIATION EFFECTS TESTING OF MIXED-SIGNAL MICROELECTRONICS

Introduction

Overview of Radiation Environments and Impact on Mixed-Signal Devices■ Total Ionizing Dose: Parametric and Functional Failure Modes■ Single-Event-Effects: Upset, Transients, Persistent Errors and Latchup

Overview of General Radiation Testing Procedures■ Pre-Irradiation Test plan■ Pre- and Post-Irradiation Characterization■ Critical Parameter Identification and Monitoring■ Documentation

Mixed-Signal Device Test Techniques■ Total Ionizing Dose Irradiation■ Single-Event-Effects

Conclusions

RADIATION EFFECTS TESTING OFMIXED-SIGNAL MICROELECTRONICSH. Jake Tausch, Jr.Mission Research Corporation

Mr. H. Jake Tausch, Jr. received hisB.S. in Electrical Engineering fromthe United States Air ForceAcademy in 1969 and his M.S. inElectrical Engineering from theUniversity of New Mexico in 1973.From 1971 through 1974 Mr. Tauschworked in the transient radiationeffects (TREE) branch of the AirForce Weapons Laboratory, per-forming experimental research onelectronic components. He joinedTektronix Inc in 1974 and from 1974to 1977 designed electronic testequipment for characterizing cus-tom integrated circuits. From 1977through 1983 he worked for BDMwhere, among other things, hedeveloped test systems for charac-terizing radiation effects on compo-nents and systems. From 1983through 1991 he founded and waspresident of Design EngineeringInc., a small business that designedand manufactured specialized sys-tems for radiation effects testing ofelectronic components. He joinedMission Research Corporation in1991 and is currently the Designand Analysis Group Leader. Hisresponsibilities include designingand fabricating specialized elec-tronic test equipment for ionizingradiation effects testing. Mr.Tausch has been a member of IEEEsince 1967 and has authored or co-authored 12 papers relating to radi-ation effects and associated testing.


8

Lee F. Hoffmann received his B.S.in Electrical Engineering fromLouisiana State University in 1983.Since joining Honeywell, Inc., hehas worked in the design anddevelopment of radiation-hard-ened ring laser gyroscopes andaccelerometers, electromagneticpulse test equipment, and morerecently on radiation-hardenedcomputers and interferometricfiber optic gyroscopes. Mr.Hoffmann has significant experi-ence in both weapon and naturalspace radiation effects and designand test techniques. He led thedevelopment of the first, qualified,true no-upset computer for theMinuteMan III program. Morerecently, Mr. Hoffmann has beenthe Systems Survivability Engineeron several satellite and missiledevelopment projects. He hasauthored or coauthored severalpapers at the NSREC and the bien-nial SEE Symposium.

Lee Hoffmann will provide a discussion of the issues and problems associated withthe radiation response characterization and testing of the various types of program-mable logic devices including programmable arrays, simple and complex logicdevices and Field Programmable Gate Arrays (both re- and non- reconfigurable).The discussion will address the pertinent radiation environments, failure modes, teststrategies and future issues.

RADIATION EFFECTS TESTING OF PROGRAMMABLE LOGIC DEVICES

Introduction

Background■ Development of Programmable Logic Devices■ Space Applications

Radiation Effects Overview■ Single-Event-Effects■ Total Ionizing Dose Effects

Radiation Effects Impact on Device Performance■ Configuration Issues■ Functional and Parametric Failure Modes

Radiation Test and Characterization Strategies■ Device Architecture ■ Electrical Performance

Future Trends

Conclusions

RADIATION EFFECTS TESTING OFPROGRAMMABLE LOGIC DEVICESLee F. HoffmannHoneywell Space Systems

Technical ProgramTechnical Program

9

TECHNICAL INFORMATION

The NSREC technical program will consist of contributed oral and poster papers,three invited papers, and a data workshop. All oral sessions will be held in theExposition Hall B and C. Oral papers will be 12 minutes in length with an additionalthree minutes for questions. The Technical Sessions and chairpersons are:

■ Space and Terrestrial EnvironmentsChair: Clive Dyer, DERA

■ Photonic Devices and Integrated CircuitsChair: Paul Marshall, Consultant

■ Isolation TechnologiesChair: John Cressler, Auburn University

■ Single Event Effects, Mechanisms and ModelingChair: Gary Swift, Jet Propulsion Laboratory

■ Single Event Effects, Devices and Integrated CircuitsChair: Karin Johansson, Ericsson Saab Avionics

■ Basic MechanismsChair: Karel Vanheusden, Air Force Research Laboratory

■ Devices and Integrated CircuitsChair: David Hiemstra, MacDonald Dettwiler

■ Commercial Space SystemsChair: Philippe Calvel, Alcatel Espace

■ Hardness AssuranceChair: Bruce Black, Raytheon

■ Dosimetry and FacilitiesChair: Anatoly Rosenfeld, University of Wollongong

Papers that are most effectively presented visually with group discussion will be dis-played from 12:00 PM Tuesday through 5:00 PM Thursday in the Exposition Hall A.Authors will be available to discuss their work during the Poster Session from 2:10 to5:00 PM on Wednesday. The poster chair is Steve Witczak, Sandia NationalLaboratories.

Papers in the workshop are intended to provide radiation response data to scientistsand engineers who use electronic devices in a radiation environment, and for design-ers of radiation-hardened systems. Workshop posters can be previewed from12:00 PM Tuesday through 5:00 PM Thursday in the Silver Baron Ballroom A. TheData Workshop will be held from 2:30 to 5:00 PM Thursday, at which time theauthors will be available to discuss their work. A copy of the Workshop Record willbe mailed to all registered attendees after the conference. The workshop chair is JimKinnison, Johns Hopkins University/Applied Physics Laboratory.

Mr. Russ Fields, president of Nevada Mining Association, will discuss NevadaMining on Wednesday. Dr. Jeffrey Jones, NASA Johnson Space Center, will discussSpace Medicine on Thursday. Dr. Daniel Hastings, MIT, Professor of Aeronautics andAstronautics and Engineering Systems, will discuss The Promise of Small on Friday.

A limited number of late–news papers will be accepted and included in the postersession. The deadline for submitting late–news papers is June 9, 2000. Please submitlate–news papers using the 4–page summary and 35–word abstract format to theTechnical Program Chairman, Art Campbell, Naval Research Laboratory, Code 6820,Building 75, Room 218, 4555 Overlook Avenue, SW, Washington, DC 20375,202-767-9043. Abstracts can be emailed to [email protected] as a PDF fileonly. For further information, please see the NSREC Conference web site atwww.nsrec.com.

"The NSREC 2000 oral and posterpresentations and the data workshopposters will provide to our attendeesthe opportunity to view the very latestresearch results in the areas of nuclearand space radiation effects."

Art Campbell

POSTER SESSION

RADIATION EFFECTS DATA WORKSHOP

INVITED SPEAKERS

LATE-NEWS PAPERS

Technical Program TuesdayTechnical Program Tuesday

10

8:15 AM

8:20 AM

8:40 AM

SESSION A8:45 AM

A-18:55 AM

A-29:10 AM

A-39:25 AM

A-49:40 AM

OPENING REMARKSRon Pease, RLP Research

AWARDS PRESENTATIONKlaus Kerris, Radiation Effects Steering Group Chairman

TECHNICAL SESSION OPENING REMARKSArt Campbell, Naval Research Laboratory

ISOLATION TECHNOLOGIESSESSION INTRODUCTIONChair: John Cressler, Auburn University

Correlation between Co-60 and X-ray Exposures on Radiation-InducedCharge Buildup in Silicon-on-Insulator Buried OxidesJ. R. Schwank, M. R. Shaneyfelt, R. A. Loemker, B. L. Draper, P. E. Dodd, S. C. Witczak, L. C. Riewe, Sandia National Laboratories; V. Ferlet-Cavrois, P. Paillet, J. L. Leray, CEA-DAM Ile-de-France; D. M. Fleetwood, Vanderbilt University

Large differences in charge buildup in SOI buried oxides can result between x-rayand Co-60 irradiations. The effects of bias configuration and substrate type oncharge buildup and hardness assurance issues are explored.

Worst-case Bias during Total Dose Irradiation of SOI TransistorsV. Ferlet-Cavrois, T. Colladant, P. Palliet, J. L. Leray, O. Musseau, CEA/DIF; J. R. Schwank, M. R. Shaneyfelt, Sandia National Laboratories; J. L. Pelloie, J. du Port de Ponsharra, CEA/DTA-LETI

The worst case bias during total dose irradiation of partially depleted SOI transistorsis correlated with the device architecture. Experiments and simulations are used toanalyze SOI back transistor threshold voltage shift and charge trapping in the buriedoxide.

Hole and Electron Trapping in Ion Implanted Thermal Oxides and SIMOXB. J. Mrstik, H. L. Hughes, D. I. Ma, I. P. Isaacson, R. A. Walker, NRL; P. J. McMarr, R. K. Lawrence, SFA

Optically-assisted methods of injecting either electrons or holes into SiO2 layers wereused to determine the effects of ion-implantation on charge trapping dry- and wet-grown thermal oxides and in the buried oxide of SIMOX material.

Single-Event Upset and Snapback in Silicon-on-Insulator DevicesP. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, G. L. Hash, B. L. Draper, P. S. Winokur, Sandia National Laboratories

SEU is studied in SOI transistors and circuits with various body tie structures. Theimportance of impact ionization effects, including single-event snapback, is explored.Implications for hardness assurance testing of SOI integrated circuits are discussed.


11

A-59:55 AM

POSTER PAPERS

PA-1

PA-2

10:10 - 10:30 AMEXP. HALL PRE-FUNCTION AREA

SESSION B10:30 AM

B-110:40 AM

B-210:55 AM

Laser Probing of Bipolar Amplification in 0.25 micron MOS/SOITransistorsO. Musseau, V. Ferlet-Cavois, J. L. Pelloie, CEA; A. B. Campbell, D. McMorrow, NRL; S. Buchner, SFA

The parasitic bipolar amplification in MOS/SOI transistors, which determines theSEU sensitivity of actual devices, has been experimentally measured. This techniqueis relevant for both device physics and hardness assurance.

Thin Box SOI Materials for Applications in Radiation EnvironmentsS. T. Liu, S. Sinha, P. Fechner, D. Torigian, Honeywell; W. C. Jenkins, H. Hughes, NRL

Thin buried oxide (170 nm BOX) SOI materials are investigated for applications inradiation environments. They are total dose radiation tolerant to 300 krads (SiO2)and are evaluated by a 0.25 micron SOI CMOS technology.

Total Ionizing Dose Radiation Performance of a Radiation Hard 0.35 micron CMOS SOI Technology at 77 KW. C. Jenkins, NRL; S. T. Liu, Honeywell

This paper is the first demonstration that 0.35 micron CMOS SOI technology is totalionizing dose radiation hard to 500 krads (SiO2) at 77 K. Contrary to room tempera-ture results, the worst case radiation bias at 77 K is the on-gate bias condition.

BREAK

SPACE AND TERRESTRIAL ENVIRONMENTSSESSION INTRODUCTIONChair: Clive Dyer, DERA

Threshold Determination for Solar Array Sustained ARC ImmunityP. Pelissou, F. Serre, Matra Marconi Space

Destructive secondary arcs resulting from electrostatic charging of high voltage solararrays have led to power losses on GEO spacecraft. Results from irradiation of solarcells elucidate the design requirements for immunity to this effect.

Characterizing Solar Proton Energy Spectra For Radiation EffectsM. A. Xapsos, R. J. Walters, G. P. Summers, NRL; J. L. Barth, E. G. Stassinopoulos,NASA-Goddard Space Flight Center; S. R. Messenger, E. A. Burke, SFA

A new description of solar proton energy spectra is developed based on the Weibulldistribution. When applied to observed spectra and model spectra, new insights areobtained for radiation effects applications.


12

B-311:10 AM

B-411:25 AM

POSTER PAPERS

PB-1

PB-2

PB-3

11:40 - 1:15 PMCITY CENTER PAVILION

Radiation Environment Measurements from CREAM and CREDODuring the Approach to Solar MaximumC. S. Dyer, P. R. Truscott, C. Sanderson, C. Watson, C. L. Peerless, P. Knight, R. Mugford,Space Department DERA; T. Cousins, Defence Research Establishment, Ottawa; R. Noulty, Bubble Technology Industries

Since 1997 new results from the Cosmic Radiation Environment Monitors (CREAMand CREDO) have been obtained in low earth orbit on MIR and highly eccentric orbiton MPTB. These are compared with environment models.

Analysis, Design, and Performance of Electronics in a Deep Space,High Radiation EnvironmentR. Katz, J. Barth, NASA-Goddard Space Flight Center; R. Barto, Spacecraft DigitalElectronics; T. Bickler, P. Fieseler, H. Garrett, A. Johnston, Jet Propulsion Laboratory; S. Jaskulek, JHU/APL

The design of deep space electronics and the analysis of a radiation environment arepresented. Hardening options are analyzed, along with their electronic and missionimpacts. Performance in the Jovian radiation environment is discussed.

Experimental Study of Space Proton Environment Effects on HESSI Detector BackgroundWojtek Hajdas, Norbert Frey, Knud Thomsen, Alex Zehnder, Paul Scherrer Institut

Proton irradiation of titanium and tungsten samples by a simulated SAA spectrum isused to quantify the contribution of induced radioactivity in these materials to thebackground of the HESSI gamma-ray spectrometer in LEO.

Monte-Carlo Simulations of Radiation Effects on ISOCAM on Board the Infrared Space ObservatoryArnaud Claret, Herve Dzitko, CEA

The sensitivity of the ISOCAM infrared camera is limited by glitches caused byimpacts of charged particles. Glitch rates and their spatial and spectral properties arecomputed by Monte-Carlo simulations and compared with observations.

The Relationship Between DSCS III B-7 Surface Charging andGeomagnetic Activity IndicesL. Habash Krause, D. J. Knipp, US Air Force Academy; B. K. Dichter, K. P. Ray, Air Force Research Laboratory

Correlations between DSCS III B-7 surface charging data (both frame and differential)and selected geomagnetic indices are surveyed with the aim of providing nowcastingand forecasting techniques.

INDUSTRIAL EXHIBITS LUNCH


13

SESSION C1:15 PM

C-11:30 PM

C-21:45 PM

C-32:00 PM

C-42:15 PM

POSTER PAPERS

PC-1

COMMERCIAL SPACE SYSTEMSSESSION INTRODUCTIONChair: Philippe Calvel, Alcatel Espace

Observation and Prediction of SEU Rates in the SOHO SatelliteOrbiting Around the Lagrangian PointR. Harboe-Sorensen, E. Daly, F. Teston, F. Vandebussche, P. Perol, H. Dzitko, J. Cretolle,European Space Agency/ESTEC

Single event switch-off events upsets caused by cosmic rays and solar particles havebeen observed in commercial components on the SOHO spacecraft since 1995.Observations are compared with predictions based on ground testing.

Experimentally Evaluating an Automatic Approach for Generating Safety-critical Software with Respect to Transient ErrorsP. Cheynet, B. Nicolescu, R. Velazco, TIMA Laboratory; M. Rebaudengo, M. Sonza Reorda, M. Violante, Politecnico di Torino

This paper deals with a software modification strategy allowing on-line detection oftransient errors. Preliminary results are presented and discussion points out theeffectiveness of this approach.

First Failure Predictions for EPROMs of the Type Flown on the MPTB SatelliteP. J. McNulty, Clemson University; L. Z. Scheick, Jet Propulsion Laboratory (ClemsonUniversity); D. R. Roth, Applied Physics Laboratory

Extreme value analysis applied to ground test data provides a new method for pre-dicting the first bit to fail in array EPROM memory cells exposed to ionizing radia-tion. The method is applied to the ground controls of UVPROMs flown on MPTB.

Prediction of the One Year Thermal Annealing of Irradiated COTSDevices Based on Experimental Isochronal CurvesF. Saigne, Univesite de Reims; L. Dusseau, J. Fesquet, J. Gasiot, CEM2 and UniversityMontpellier; R. Ecoffet, Centre National d’Etudes Spatiales; R. D. Schrimpf, K. F. Galloway, Vanderbilt University

From a single experimental isochronal curve, the one year isothermal behavior ofthree different irradiated commercial Metal Oxide Semiconductor devices is predict-ed and compared with experimental isothermal curves at 60°C and 90°C.

Application-Oriented Radiation Evaluation of Commercial LinearIntegrated CircuitsR. Marec, P. Adell, C. Barillot, O. Mion, Alcatel; C. Chatry, TRAD; R. Ecoffet, Centre National d’Etudes Spatiales

The method for evaluating the radiation susceptibility of commercial analog devicesis presented. We use the notion of tolerable shifts for the design to compare the TIDbehavior. The duration and maximum amplitude criteria and the cross section curveare used to analyze single event effect.


14

2:30 - 3:00 PMCITY CENTER PAVILION

SESSION D3:00 PM

D-13:15 PM

D-23:30 PM

D-33:45 PM

D-44:00 PM

D-54:15 PM

BREAK

BASIC MECHANISMSSESSION INTRODUCTIONChair: Karel Vanheusden, Air Force Research Laboratory

A Spin Dependent Recombination Study of Radiation Induced Pb1 at the(001) Si/SiO2 InterfaceTetsuya D. Mishima, P. M. Lenahan, The Pennsylvania State University

The electronic properties of the (001) Si/SiO2Pb1 centers are quite controversial. Wepresent spin dependent recombination measurements which provide strong evidencethat radiation-induced Pb1 centers have levels around the middle of the Si band gap.

Characterization of X-Ray Radiation Damage in Gate and Isolation Oxides Using Second Harmonic GenerationN. H. Tolk, S. K. Singh, Z. Marka, W. Wang, S. N. Rashkeev, S. T. Pantelides, S. C. Lee, R. D. Schrimpf, D. M. Fleetwood, Vanderbilt University

We report the first second-harmonic-generation (SHG) measurements to characterizeX-ray radiation damage in gate oxides. We find significant differences in the SHGsignal after irradiation.

Reactions of Mobile Hydrogen with the Si-SiO2 InterfaceS. T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University

We report first-principles calculations using realistic interfaces and interpret them inthe context of radiation-induced phenomena. Depending on conditions, H atoms andions may passivate existing defects, induce new defects, or bounce off the interface.

Implant and Anneal Induced Modification of Thermally GrownAmorphous Silicon DioxideB. J. Nicklaw, Vanderbilt University; J. F. Conley, Jr., E. Taw, Dynamic ResearchCorporation; A. M. McFadden, IC Implant Center

The electronic properties of defects in thin SiO2 films that have been modified by ionimplantation and annealing have been investigated experimentally and modeledwith ab-initio calculations.

Low Energy Electron-Excited Nanoscale Luminescence: A Tool to DetectTrap Activation by Ionizing RadiationB. D. White, L. J. Brillson, The Ohio State University; S. C. Lee, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, Vanderbilt University; Y. M. Lee, G. Lucovsky, North Carolina State University

Ultra-thin SiO2/Si gate dielectric structures exposed to heavy X-ray irradiation exhib-it optical emission characteristics of interface traps. Low energy electron-excitedluminescence spectroscopy with nanometer-scale depth resolution yields a character-istic spectral energy and excitation depth dependence.


15

D-64:30 PM

D-74:45 PM

D-85:00 PM

D-95:15 PM

POSTER PAPERS

PD-1

PD-2

Field Dependent Deactivation in Bipolar Devices at Elevated IrradiationTemperaturesS. C. Witczak, J. R. Schwank, M. R. Shaneyfelt, P. S. Winokur, Sandia National Laboratories;R. C. Lacoe, D. C. Mayer, The Aerospace Corporation

Dopant deactivation at 100°C is measured in bipolar Si-SiO2 structures as a functionof irradiation bias. The deactivation occurs most efficiently at small biases in deple-tion and is consistent with passivation and compensation mechanisms involvinghydrogen.

Hydrogen Related Defects in Irradiated SiO2P. E. Bunson, M. Di Ventra, S. T. Pantelides, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University

We use first-principle calculations to investigate the energetics of defects in SiO2 andtheir reactions with hydrogen and discuss their implications for total-dose buildup ofinterface traps.

Total Dose Effects in Composite Nitride-Oxide (NO) Films andOptimizing Composite Layer Thickness for Minimizing Threshold Voltage ShiftS. C. Lee, A. Raparla, Y. F. Li, J. Gasiot, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway,Vanderbilt University; M. Featherby, D. Johnson, Space Electronics Inc.

Total does effects in composite nitride-oxide (NO) films with thicknesses suitable forpower MOSFET applications are studied. An optimum nitride/oxide thickness ratiofor minimizing the threshold voltage shift due to irradiation is suggested.

Electrical Breakdown of Irradiated Oxides During Current-Temperature StressD. M. Fleetwood, Vanderbilt University

Electrical breakdown in thin oxides is assessed by a new bias-temperature ramp tech-nique. No significant effect of radiation exposure on breakdown is observed for highquality thermal and nitrided oxides, up to 20 Mrad(SiO2).

Radiation Induced Depassivation of Latent Plasma DamageL. Pantisano, A. Paccagnella, Universita di Padova; M. G. Valentini, STMicroelectronics; O. Flament, O. Musseau, CEA-DAM; P. G. Fuochi, CNR-France

Ionizing radiation damage of 7 nm-gate oxides depends on the latent oxide damageafter plasma processing. After irradiation, positive and negative charge trapping areboth affected by plasma damage.

Microscopic Mechanisms of Electron Trapping by Self-trapped Holes andProtons in Amorphous SiO2Shashi P. Karna, Karel Vanheusden, Walter M. Shedd, Robert D. Pugh, Air Force ResearchLaboratory; Henry A. Kurtz, Unversity of Memphis; Roderick A. B. Devine, University ofNew Mexico

Quantum mechanical calculations reveal that the oxygen associated self-trappedholes are “localized” while the charge associated with a proton is “distributed” overmany atoms. This accounts for different electron capture characteristics.


16

PD-3

PD-4

PD-5

PD-6

PD-7

Determining Energy Distributions of Interface Traps in Gate Controlled Lateral PNP TransistorsClaude Cirba, H. J. Barnaby, R. D. Schrimpf, Yanfeng Li, Vanderbilt University; Steve Kosier, VTC

A new methodology for charge separation in bipolar technologies is presented.Through the use of measurements on gate controlled lateral PNP bipolar junctiontransistors and device simulations, densities of fixed positive oxide trapped chargeand the energy distribution of interface traps can be calculated for bipolar oxides.

A Mechanism for Enhanced Low-Dose-Rate Degradation in Bipolar TransistorsHarold P. Hjalmarson, Steven C. Witczak, Peter A. Schultz, Duane J. Bowman, Sandia National Laboratories; Daniel M. Fleetwood, Vanderbilt University

A mechanism for enhanced low dose rate sensitivity is described in which the keyprocess is the competition between hydrogen creation of interface traps and dimer-ization. Dimerization dominates at high dose rates, leading to reduced degradation.

Electronic Structure Theory and Mechanisms of Oxide Trapped HoleAnnealing ProcessS. P. Karna, R. D. Pugh, W. M. Shedd, Air Force Research Laboratory; A. C. Pineda, The University of New Mexico; T. R. Oldham, Army Research Laboratory

First-principle quantum mechanical calculations support the Lelis model of reverseannealing in the oxide and provide the first electronic structure explanation of theprocess, suggesting that delocalized holes (E’delta centers) are annealed out permanently.

Use of UV Pre-Irradiation for Diagnostics of Radiation Response of MOS and Bipolar DevicesV. S. Pershenkov, A. S. Tsmibalov, M. N. Levin, V. V. Belakov, Moscow Engineering PhysicsInstitute; V. N. Ulimov, V. V. Emelianov, Research Institute of Scientific Instruments

It is proposed to use the comparison of MOS and bipolar transistor radiationresponse with and without preliminary UV illumination for estimation of effect ofH-related complexes on bulk-oxide and interface trap buildup.

Molecular Hydrogen Influence on Interface Traps Buildup in MOSFETs atSwitching Gate Bias During IrradiationG. I. Zebrev, A. A. Komarov, V. S. Pershenkov, Moscow Engineering Physics Institute

It is shown experimentally, that preliminary exposure of nMOSFETs in hydrogenambient leads to a drastic increase of radiation-induced interface trap density with-out appreciable dependence on gate bias polarity and magnitude during irradiation.


17

PD-8

5:30 PM

p-n-junction Inversion in Neutron Irradiated Silicon DetectorsG. Golan, E. Rabinovich, Holon Academic Institute of Technology; A. Inberg, Axelevitch Y. Rosenwaks, G. Luarsky, A. Seidman, N. Croitoru, Dept. of PhysicalElectronics; P. G. Rancoita, Instituto Nazional di Fisica Nucleare

p+-n-n+ junction inversion in neutron irradiated silicon detectors was directlyobserved using an advanced Contact Potential Difference (CPD) method of AtomicForce Microscopy (AFM). Topographical AFM data and Electron Beam InducedCurrent (EBIC), installed on a conventional Scanning Electron Microscope, confirmthese observations.

END TUESDAY SESSIONS

Technical Program WednesdayTechnical Program Wednesday

18

INVITED TALK8:15 - 9: 15 AM

SESSION E9:15 AM

E-19:25 AM

E-29:40 AM

POSTER PAPERS

PE-1

Nevada MiningRuss Fields, President Nevada Mining Association

Mining is the cornerstone of Nevada’s foundation and history. The presentation willprovide a historical perspective of Nevada mining and current information onNevada’s nation-leading gold industry. Mining remains an important part of thestate’s economy, where gold mines produced in excess of 8 million ounces of gold in1999. This is more than all other U.S. production combined and the third largest pro-duction in the world behind S. Africa and Australia. A PowerPoint tour of a Nevadamining operation will illustrate aspects of Nevada’s modern mining industry.

Russ Fields is President of the Nevada Mining Association, a post he has held sincelate 1997. The Association represents the Nevada mining industry in governmentand public relations and, through its committee structure, addresses regulatory andlegal matters affecting the industry. Nevada is the largest non-fuel mineral producerin the United States. Mr. Fields holds a degree in geology from the University ofNevada, Reno and Masters of business administration, also from UNR. Prior to tak-ing his present position, Mr. Fields served under Governors Bryan and Miller asDirector of the Nevada Department of Minerals, the state agency charged with pro-moting and encouraging the responsible development of Nevada’s mineral resources.Earlier in his career, Mr. Fields held a number of positions in the minerals industry,including chief geologist and manager of exploration. Mr. Fields resides in Reno,Nevada with his wife and three children.

HARDNESS ASSURANCESESSION INTRODUCTIONChair: Bruce Black, Raytheon

Application of Hardness-By-Design Methodology to Radiation-TolerantASIC TechnologiesR. C. Lacoe, J. V. Osborn, S. C. Moss, S. Brown, D. C. Mayer, The Aerospace Corporation

Radiation-tolerant ASIC design is enabled by the trend in commercial microelectron-ics, demonstrated here with new radiation results on a 0.25 µm commercial processutilizing shallow trench isolation, toward increased radiation tolerance.

Origins of Total-Dose Response Variability in LM111 ComparatorsH. J. Barnaby, R. D. Schrimpf, D. M Fleetwood, Vanderbilt University; R. L. Pease, RLP Research; T. Turflinger, P. Cole, J. Krieg, NSWC Crane; M. C. Maher, National Semiconductor

LM111 voltage comparators exhibit a wide range of total-dose-induced degradation.Simulations show this variability may be a natural consequence of the physical structure on the input transistors.

Evaluation of Accelerated Total Dose Testing of Linear Bipolar CircuitsT. Carriere, Matra Marconi Space; R. Ecoffet, Centre National d’Etudes Spatiales; P. Poirot, Consultant

Different part types of linear bipolar technology were irradiated in order to evaluatethe ability of accelerated total dose testing to describe the tolerance at very low doserate. Results confirm that elevated temperature irradiation performed at high doserate is well adapted to define the tolerance at very low dose rate.


19

PE-2

9:55 - 10:30 AMCITY CENTER PAVILION

SESSION F10:30 AM

F-110:45 AM

F-211:00 AM

F-311:15 AM

F-411:30 AM

Experimental Procedure to Predict the Competition Between theDegradation Induced by the Irradiation and the Thermal Annealing ofOxide Trapped Charge on Commercial MOSFET DevicesF. Saigne, LAM Universite de Reims; L. Dusseau, J. Fesquet, J. Gasiot, CEM2 and University Montpellier; R. Ecoffet, Centre National d’Etudes Spatiales; R. D. Schrimpf, K. F. Galloway, Vanderbilt University

A procedure is proposed to predict the long term behavior of commercial MetalOxide Semiconductor Field Effect Transistors devices in ionizing radiation environ-ment. The prediction and experimental results are compared.

BREAK

SINGLE EVENT EFFECTS, DEVICES AND INTEGRATED CIRCUITSSESSION INTRODUCTIONChair: Karin Johansson, Ericsson Saab Avionics

Time-resolved Measurements and Simulations of Particle-induced SingleEvent Effects in Power Semiconductor DevicesGerald Soelkner, Siemens Corporate Research; Peter Voss, EUPEC; Winfried Kaindl, Munich University of Technology

High-energy nucleon-induced current pulses in power diodes were measured withhigh time resolution for non-destructive and destructive events. Correspondingdevice simulations yield the temporal evolution of electric field and charge distributions.

Angular Dependence of DRAM Upset Susceptibility and Implications forTesting and AnalysisSteven M. Guertin, Gary M. Swift, Larry D. Edmonds, Jet Propulsion Laboratory

Heavy-ion irradiations of two types of commercial DRAMs reveal unexpected angu-lar responses. One device’s cross section varied by two orders of magnitude withazimuthal angle. Accurate prediction of space rates requires accommodating thiseffect.

Single-Event-Upset Characterization of a Flash Analog-To-DigitalConverter (AD9058)S. Buchner, SFA (NRL); T. Meehan, A. B. Campbell, K. Clark, D. McMorrow, NRL;E.Petersen, Consultant

Data from a space experiment, accelerator testing and pulsed-laser testing of a flashanalog-to-digital converter (AD9058) are used to elucidate the upset mechanisms andassess models for rate predictions.

Transient Bitflip Injection on Microprocessor-Based Digital ArchitecturesR. Velazco, S. Rezgui, TIMA Laboratory; R. Ecoffet, Centre National d’Etudes Spatiales

A new method of injection transient bitflips on microprocessor-based digital architec-tures, randomly in time and location, is investigated. Experimental results illustratethe potentialities of this new strategy.


20

POSTER PAPERS

PF-1

PF-2

PF-3

PF-4

PF-5

11:45 - 1:15 PM

The Impact of Single Event Gate Rupture in Linear DevicesG. K. Lum, H. O’Donnell, N. Boruta, Lockheed Martin Missiles and Space

By failure analysis tools and circuit modeling, SEGR was uncovered in several analogcircuits. A new approach to assessing the risk of SEGR for a system design will bepresented.

SEU Sensibility of SRAMs to Neutrons or ProtonsG. Hubert, K. Coulie, J-M Palau, B. Sagnes, CEM; M-C Calvet, Aerospatiale Matra Lanceures; S. Fourtine, Aerospatiale Matra Airbus

Neutron/proton-induced SEU in SRAMs are investigated thanks to 3D full celldevice simulations for tracks that do not cross the OFF n-channel MOSFET drain. Itis found that the duration of the ion-induced current pulse strongly depends on thetrack location. As a result, the flipping of the memory cell is delayed, and the criticalcharge involved during the upset is no more constant. A linear relationship betweenthe critical charge and the delay is found and is explained by the contribution of theON p-channel MOSFET.

Application of Laser Testing in Study of SEE Mechanisms in 16-MBIT DRAMSS. Duzellier, D. Falguere, ONERA-DESP; R. Ecoffet, Centre National d’Etudes Spatiales; V. Pouget, P. Fouillat, IXL

A laser experiment has been carried out on the SMJ416400 16Mbit DRAM in order toidentify the mechanism leading to severe row errors. The error signatures observedwith heavy ions are reproduced and related to physical locations on the die. Thequestion of laser to ion equivalence is discussed.

Analysis of Single-Ion Multiple-Bit Upsets on High Density DRAMSS. Kuboyama, N. Nemoto, A. Makihara, S. Matsuda, National Space Development Agency of Japan; T. Hirao, Japan Atomic Energy Research Institute; S. Buchner, SFA; A. B. Campbell, NRL

New types of Multiple-Bit Upset (MBU) modes have been identified in high densityDRAMs (16 Mbit and 64 Mbit). The mechanisms for the new upset modes are pro-posed based on detailed physical bit map analysis.

In-Flight Observations of Multiple-Bit Upset in DRAMsGary M. Swift, Steven M. Guertin, Jet Propulsion Laboratory

In-flight data is examined showing a very high incidence of multiple-bit errors in asolid-state recorder that incorporates error detection and correction. The high MBUrate is shown to be a consequence of the physical selection of memory cell locationsin the recorder architecture.

LUNCH


21

SESSION G1:15 PM

G-11:25 PM

G-21:40 PM

G-31:55 PM

POSTER PAPERS

PG-1

PG-2

DOSIMETRY AND FACILITIESSESSION INTRODUCTIONChair: Anatoly Rosenfeld, University of Wollongong

An Integrated Sensor Using Optically Stimulated Luminescence for In Flight DosimetryL. Dusseau, D. Plattard, G. Polge, G. Ranchoux , F. Saigne, J. Fesquet, J. Gasiot, CEM2 and University Montpellier; R. Ecoffet, Centre National d’Etudes Spatiales

The feasibility of an integrated sensor based on optically stimulated luminescencedosimetry is demonstrated. The principle is detailed and the first calibrations arepresented.

A Computational Technique for Simulations of Energy Deposition byCharged Particles in Complex Small VolumesI.Cornelius, A. B. Rosenfeld, P. D. Bradley, University of Wollongong; R. L. Maughan, Wayne State University

An ion transport code was developed for simulating energy deposition in sensitivevolumes of complex structures by arbitrary energetic ion fields. The code was usedto simulate the response of a SOI microdosimeter in a proton field generated by highenergy neutrons in water converter.

Measurement of the Effective Sensitive Volume of UVPROM Cells Basedon Recombination Effects in Field OxidesL. Z. Scheick, P. J. McNulty, Clemson University

A new method is described for measuring the sensitive volume of a device using aUVPROM. A direct measurement of the dose required to erase the FAMOS cellyields a measurement of the volume of oxide which collects the charge.

Influence of Temperature on Dose Rate Laser Simulation AdequacyP. K. Skorobogatov, A. Y. Nikiforov, A. A. Demidov, V. V. Levin, Specialized ElectronicSystems

The temperature dependence of equivalent dose rate in silicon IC’s under 1.06 µmlaser irradiation is investigated. 2D-numerical modeling and experiments were car-ried out under specialized test structures in the temperature range up to 100°C.

Electron Collision Dose EnhancementJohn Solin, Lockheed Martin Missiles and Space

High-Z layers in IC packages and on IC die slow and reflect incident electron fluxesmuch more effectively than low-Z layers. In typical nuclear and space environments,this can enhance the electron collision dose by up to 85%.


22

2:10 - 5:00 PMEXPOSITION HALL A

5:00 PM

POSTER SESSIONAND BREAK

Chair: Steve Witczak, Sandia National Laboratories

END OF WEDNESDAY SESSIONS

Technical Program ThursdayTechnical Program Thursday

23

INVITED TALK8:15 - 9:15 AM

SESSION H9:15 AM

H-19:25 AM

H-29:40 AM

H-39:55 AM


H-410:30 AM

Space MedicineDr. Jeffrey Jones, M.D., NASA Johnson Space Center

The space radiation environment will be reviewed both in low-earth-orbit (LEO) andinterplanetary space with a review of the human dosimetry nomenclature and typesof effects on biological systems at the molecular, cellular and whole-organism levelproducing clinical syndromes. Included will be a discussion of countermeasures aswell as our response plan for radiation contingency.

Dr. Jeffrey Jones, is currently a medical operations physician and flight surgeon atthe NASA Johnson Space Center and an Adjunct Associate Professor at the BaylorCollege of Medicine Urology Department as well as serving in the Navy Reserve as aCommander in the Medical Corps, flight surgeon in the Texas Air National Guardand Aviation Medical Examiner for the FAA. He received a B.A. from TrinityUniversity, San Antonio, Texas, a M.S. from the Univeristy of Texas Medical Branch,and a M.D. for Baylor College of Medicine.

PHOTONIC DEVICES AND INTEGRATED CIRCUITSSESSION INTRODUCTIONChair: Paul Marshall, Consultant

Proton-Induced Changes in CTE for N-Channel CCDs and the Effect onStar Tracker PerformanceG. R. Hopkinson, Sira Electro-Optics Ltd

Proton-induced changes in charge transfer efficiency of two CCD types has beencharacterized in detail and compared with measurements of the shift in position ofartificial star images to determine the impact on star tracker performance.

Displacement Damage Effects in InGaAs CCDs: Experimental Resultsand Semi-Empirical Model PredictionsS. Barde, R. Ecoffet, J. Costeraste, A. Meygret, Centre National d’Etudes Spatiales; X. Huggon, Thomson-TCS

Proton irradiation results are presented for InGaAs CCDs used on the SPOT-4 satel-lite. Mean and extreme dark current values are analyzed and fitted with semi-empir-ical models. Prediction of orbital behavior is in good agreement with flight data.

High Energy Proton-Induced Dark Signal in Silicon Charge CoupledDevicesMark Robbins, Marconi Applied Technologies Limited

The distribution of dark signal in 10 and 60 MeV proton irradiated CCDs is discussedand theory is compared with measurements made on devices with differing pixelsizes. Agreement between measurement and theory is good.

BREAK

Radiation Effects in a CMOS Active Pixel SensorG. R. Hopkinson, Sira Electro-Optics Ltd

A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton andheavy-ion irradiation. Permanent displacement damage effects were seen but totalionizing dose-induced dark current annealed at 1000C.


24

H-510:45 AM

H-611:00 AM

POSTER PAPERS

PH-1

PH-2

SESSION I11:15 AM

I-111:25 AM

Energy Dependence of Proton Damage in AlGaAs Light-Emitting DiodesR. A. Reed, C. J. Marshall, K. A. LaBel, NASA-Goddard Space Flight Center; P. W. Marshall, Consultant; H. S. Kim, Jackson and Tull; Loc Xuan Nguyen, Raytheon

We measure the energy-dependence of proton-induced light emitting diode degrada-tion using a large sample size at each energy. We also present a critical review of theuse of nonionizing energy loss in AlGaAs for on-orbit predictions.

Characterization of Proton Damage in Light-Emitting DiodesA. H. Johnston, T. F. Miyahira, Jet Propulsion Laboratory

Characterization methods for proton damage in LEDs are discussed that include linearization of damage and methods to address injection-enhanced annealing.Wearout (aging) is shown to add to damage produced by displacement effects fromradiation.

Radiation-induced Dark Current in CMOS Active Pixel SensorsM. Cohen, J. P. David, ONERA/DESP

COTS CMOS active pixel sensor arrays have many advantages for space applica-tions. We evaluate the proton-induced dark current means and distributions and theassociated annealing for low and high proton fluences.

Dark Current in Irradiated Silicon Devices: Origin and UniversalDamage FactorJ. R. Srour, D. H. Lo, TRW

Data and analyses are presented which strongly suggest that dark current in irradiat-ed silicon devices is attributable to the divacancy. A universal damage factor is intro-duced which accounts successfully for radiation-induced dark current in any silicondevice.

DEVICES AND INTEGRATED CIRCUITSSESSION INTRODUCTIONChair: Dave Hiemstra, MacDonald Dettwiler

The Effects of Proton Irradiation on the Lateral and Vertical Scaling ofUHV/CVD SiGe HBT BiCMOS TechnologyJohn D. Cressler, Michael C. Hamilton, Gregory S. Mullinax, Ying Li, Guofu Niu, Alabama Microelectronics Science and Technology Center; Cheryl J. Marshall,NASA-Goddard Space Flight Center; Paul W. Marshall, Consultant; Hak S. Kim, Jackson and Tull; Michael J. Palmer, Alvin J. Joseph, Greg Freeman, IBM Microelectronics

We present the first experimental results of the effects of 63 MeV proton irradiationon both the lateral and vertical scaling properties of SiGe HBT BiCMOS technology.Three distinct generations of SiGe technology are examined.


25

I-211:40 AM

I-311:55 AM

12:10 - 1:45 PM

I-41:45 PM

I-52:00 PM

I-62:15 PM

A Comparison of the Effects of Gamma Irradiation on SiGe HBT andGaAs HBT TechnologiesShiming Zhang, Guofu Niu, John D. Cressler, Alabama Microelectronics Science andTechnology Center; Suraj J. Mathew, Micron Technology Inc.; Usha Gogineni, Peter Zampardi, IBM Microelectronics; Steven D. Clark, NSWC Crane; Richard L. Pierson, Rockwell Science Center

A comparison of the effects of gamma irradiation on SiGe HBT technologies is reported. DC, RF and low frequency noise performance are investigated for gammatotal dose up to 1 Mrad (Si).

Total Dose Radiation Response and High Temperature ImprintCharacteristics of C-RAM Resistor ElementsSteve Bernacki, Raytheon; Ken Hunt, Scott Tyson, Air Force Research Laboratory; Steve Hudgens, Boil Pashmakov, Wally Czubatyj, Ovonyx

Chalcogenide thin film elements are being integrated with CMOS structures. Thispaper reports the first total dose and imprint data published on this new technologydemonstrating no effects on chalcogenide films to 1 Mrad (Si).

LUNCH

Statistical and Small Volume Analysis of Radiation Effects on IndividualDRAM CellsL. Z. Scheick, S. M. Guertin, G. M. Swift, Jet Propulsion Laboratory

Ionizing radiation effects on DRAM cell retention time are analyzed statistically forentire devices and individual cells using gamma and proton irradiation, respectively.The results may have profound implication on DRAM survivability in space.

Total Dose Induced Degradation of Bipolar and BiCMOS DifferentialAmplifiersScott Humphrey, Hugh Barnaby, Ron Schrimpf, Vanderbilt University; Steve Kosier, VTC

Differential amplifiers are fundamental elements of digital and analog circuits. Theeffect of total ionizing dose on a differential amplifier is presented. BiCMOS test cir-cuits and SPICE parameter modeling are used to explain circuit response.

Thermal-Stress Effects on Enhanced Low-Dose-Rate Sensitivity of LinearBipolar CircuitsM. R. Shaneyfelt, J. R. Schwank, S. C. Witczak, L. C. Riewe, P. S. Winokur, G. L. Hash,Sandia National Laboratories; R.L. Pease, RLP Research; D.M. Fleetwood, VanderbiltUniversity

Thermal-stress effects are shown to have a significant impact on the enhanced low-dose-rate sensitivity of linear bipolar circuits. Implications of these results on hard-ness assurance testing and mechanisms are discussed.


26

POSTER PAPERS

PI-1

PI-2

PI-3

PI-4

PI-5

Impact of 20 MeV Alpha Ray Irradiation on the AA-band Performance ofAlGaAs Pseudomorphic HEMTsH. Ohyama, K. Kobayashi, Kumamoto National College of Technology; K.Yajima, T. Kato,Mitsubishi Electric Corporation; E. Simoen, C. Claeys, IMEC; Y. Takami, Rikkyo University;M. Yoneoka, H. Sunaga, Takasaki JAERI

The degradations on noise figure and gain as function of frequency of Si-planar-doped AlGaAs pseudomorphic HEMTs by 20 MeV alpha ray are studied for the firsttime, and its possible mechanism is also presented.

Neutron Irradiation Effects in InP/InGaAs Single Heterojunction BipolarTransistorsAlexei Shatalov, S. Subramanian, Oregon State University; A.Dentai, Lucent Technologies

Neutron irradiation effects on InP/InGaAs Single Heterojunction Bipolar Transistorsfor fluences greater than 1013 n/cm2 show considerable current gain degradation andVCE,SAT increase. Physical mechanisms for the observed effects are discussed.

The Effects of Gamma Irradiation on the Residual Phase Noise ofUHV/CVD SiGe HBT'sGuofu Niu, Zhenrong Jin, John D. Cressler, Alabama Microelectronics Science andTechnology Center; Jean B. Juraver, Mattia Borgarino, Robert Plana, Olivier Llopis, LAAS-CNRS; Suraj J. Mathew, Shiming Zhang, Steven D. Clark, NSWC Crane; Alvin J. Joseph, IBM Microelectronics

The excellent phase noise capability of SiGe HBTs is retained after 1 Mrad (Si). Theobserved hardness is attributed to the minor changes of the low frequency noise per-formance and device non-linearity after irradiation.

Circuit Technique for Threshold Voltage Stabilization Using SubstrateBias in Total Dose EnvironmentsJ. Shreedhara, H. J. Barnaby, B. Bhuva, A. Raparla, D. V. Kerns, Jr., S. E. Kerns, VanderbiltUniversity

Total dose tolerance of CMOS circuits can be improved by dynamically adjustingsubstrate voltage. Experimental results show circuits with dynamically adjusted sub-strate voltage which stabilizes threshold voltage exhibit longer lifetime in compari-son with those without.

The Effects of Total Dose Degradation on Wear Out in Advanced FlashMemoriesD. N. Nguyen, L. Z. Scheick, S. M. Guertin, G. M. Swift, A. H. Johnston, Jet PropulsionLaboratory

Total dose test results are reported on advanced 256 Mb flash memory. Ionizing radi-ation decreases the allowable number of erase/write cycles. This is an importantconsideration for applications such as solid state recorders in spacecraft.


27

2:30 - 5:00 PMSILVER BARON BALLROOM A

W-1

W-2

W-3

W-4

DATA WORKSHOPAND BREAK

Chair: Jim Kinnison, Johns Hopkins Applied Physics Laboratory

Operation of the TRIUMF (20-500 MeV) Proton Irradiation FacilityE. W. Blackmore, TRIUMF

Two proton beam lines, which can operate simultaneously into the same experimen-tal area, provide uniform proton beams with a wide range of energies and intensitiesfor single event and radiation damage testing of components.

Continuing Radiation Evaluation of Commercial-Off-The-Shelf Devicesfor Space ApplicationsJ. L. Gorelick, Hughes Space and Communications Company; S. S. McClure, Jet Propulsion Laboratory

Radiation test results are presented for a number of commercial transistors and inte-grated circuits procured in both ceramic and plastic packages. This is part of anongoing evaluation of the suitability of commercial off the shelf devices for spaceapplications.

Destructive Heavy Ion SEE Investigation of 3 IGBT DevicesP. T. McDonald, B. G. Henson, W. J. Stapor, Innovative Concepts Inc.; Mark Harris, Hamilton Sundstrand Aerospace

We performed destructive single event measurements on Semikron, Omnirel, andInfineon 600 and 1200 volt Insulated Gate Bipolar Transistors. Measurement details,observed Single Event Burnout, and Single Event Gate Rupture device cross sectionsare reported.

The Effects of Ionizing Radiation on the Data Retention of StaticRandom Access MemoriesJ. M. Benedetto, A. Jordan, N. LaValley, UTMC Microelectronic Systems

Both 6-transistor and 4-transistor/2-resistor SRAMs are shown to be sensitive to lossstored data following exposure to ionizing radiation. Pre-radiation screening tech-niques and adjusted/modified device specifications can eliminate data retention fail-ures during mission use.


28

W-5

W-6

W-7

W-8

W-9

W-10

Recent Data on Programmable Devices and Related TechnologiesIgor Kleyner, Orbital Sciences Corporation; R. Katz, NASA-Goddard Space Flight Center; J. J. Wang, Actel Corporation

Programmable logic devices are now standard in many spacecraft designs. Thedevices continue to increase in speed and gate count while power consumptiondeclines. Recent radiation test data is compiled in this paper for heavy ion and totaldose tests. Additionally, results from related components of use to the logic designerare included.

A Rad-Hard Analog Cell LibraryDavid R. Hogue, George A. Perry, Steven R. Rumel, Rodney Bonebright, John Holic, James C. Braatz, Mark P. Baze, The Boeing Company

The Jet Propulsion Laboratory Deep Space Systems Technology Program is aimed atincreasing performance and reducing costs of future deep space missions using highlevel integration of digital, analog, and sensor functions known as ”system-on-a-chip” (SOAC).

Co-60 Total Dose Test for 14- and 16-Bit ADCsG. Tomasch, R. Muller, T. Tzscheetzch, Max-Planck-Institut fur Aeronomie; R. Harboe-Sorensen, The European Space Research and Technology Centre

14-bit ADCs AD9243 (Analog Devices), LTC1419 (Linear Technology) and 16-bitADS-937 (DATEL) were irradiated, biased and unbiased, with Co-60 irradiation to 50 krad (Si). Supply currents, reference voltage, Signal-to-Noise-and-Distortion ratio(SINAD) and Standard Deviation were monitored.

Single Event Upset Characterization of the Pentium MMX and CeleronMicroprocessors using Proton IrradiationDavid M. Hiemstra, Allan Baril, MacDonald Dettwiler

Experimental single event upset characterization of the Pentium MMX and Celeronmicroprocessors using proton irradiation is presented. Results are compared withprevious testing on the Pentium MMX and Pentium II microprocessors.

High Total Dose Performance of Various Commercial off the ShelfOperational Amplifiers During IrradiationDavid M. Hiemstra, MacDonald Dettwiler

The performance of various operational amplifiers during irradiation with respect to total dose are presented. These operational amplifiers may be suitable for theextreme radiation environments encountered when orbiting Europa and Io, moons of Jupiter.

SEE Sensitivity Determination of High Density DRAMs with LimitedRange Heavy IonsR. Koga, S. Crain, P. Yu, K. Crawford, The Aerospace Corporation

We have devised a way to measure the SEE sensitivity of plastic encapsulated highdensity DRAMs with the use of limited range heavy ions. The sensitivity at low LETregions is verified by long range light ions.


29

W-11

W-12

W-13

W-14

W-15

W-16

Single Event Transient Sensitivity of Radiation Hardened and COTSVoltage ComparatorsR. Koga, S. H. Crain, K. B. Crawford, The Aerospace Corporation

The single event transient sensitivity of a radiation hardened voltage comparatortype with vertical PNP input transistors is compared with those with older lateraltransistors. The cause of the difference in sensitivity is investigated.

SEU Evaluation of SRAM MemoriesL. Z. Scheick, G. M. Swift, S. M. Guertin, Jet Propulsion Laboratory

SEU cross-sections were obtained for three different SRAM memories. The 1 MbitWhite Electronics WMS128k8, the 256 kbit Austin MT5C2564 and the 256 kbit AustinMT5C2568 SRAMs were tested. The SEU SEL thresholds were also obtained.

Single Event Effects and Total Ionizing Dose Results of a Low VoltageEEPROMP. Hsu, D. Krawzsenek, H. Anthony, C. Land, Space Electronics Inc.

Single Event Effects and Total Ionizing Dose results for a 28LV010 low voltage(3.3 volt) 1 Mbit EEPROM are presented. The results are compared with 5.0 volt datafrom similar 1 Mbit EEPROM’s.

Management of Radiation Issues for Using Commercial Non-HardenedParts on the Integral Spectrometer ProjectE. Vergnault, R. Ecoffet, R Millot, Centre National d’Etudes Spatiales; S. Duzellier, L. Guibert, ONERA; J. P. Chabaud, F. Cotin, CESR

This paper presents a practical example of a new radiation approach consisting of anoptimization of radiation specifications. This philosophy allows to use non hardenedparts and even commercial components on a major satellite.

Radiation Evaluation of Low Power CMOS 12-Bit ADCSG. R. Hopkinson, M. D. Skipper, Sira Electro-Optics Ltd; R. Harboe-Sorensen, ESTEC

Co-60 and heavy ion latch-up tests have been performed on Analog Devices AS9223and Linear Technology LTC1415 12-bit ADCs. The results show that the AD9223 issusceptible to single-event latch-up but that both devices are otherwise suitable foruse in the low dose space environment.

Long-term Prediction of Radiation Induced Losses in Single ModeOptical Fibers Exposed to Gamma Rays Using a Pragmatic ApproachM. Van Uffelen, F. Berghmans, B. Brichard, F. Vos, M. Decreton, SCK-CEN; A. Nowodzinski, J-C Lecompte, F. Le Neve, Ph. Jucker, CEA – Saclay

We have developed an industry-aimed pragmatic method based on a simple modelfor the prediction of radiation induced losses in single mode optical fibers exposed to60Co gamma rays. When environmental and measurement conditions are welldefined, log-term losses could be predicted with a precision of about 15%.


30

Comparison of Flight and Ground Data for Radiation-Induced HighCurrent States in the 68302 MicroprocessorS. H. Crain, W. R. Crain, K. B. Crawford, S. J. Hansel, R. Koga, The Aerospace Corporation

Flight data from the 68302 microprocessor in a variety of orbits have failed to revealevidence of single event latchup or snapback in contradiction to predictions based onstandard models and ground testing.

EXEQ I-IV: SEE In-Flight Measurement on the MIR Orbital StationD. Falguere, S. Duzellier, ONERA/CERT-DESP; R. Ecoffet, Centre National d’Etudes Spatiales; I. Tsourilo, NPO Energya

Spaceflight data on single event effects in a variety of devices (e.g. SRAM, DRAM,CPU) carried on the MIR Space Station are compared with predictions based on stan-dard models and ground irradiations.

SEU and TID Testing of the Samsung 128 Mbit and the Toshiba 256 MbitFlash MemoryD. R. Roth, J. D. Kinnison, J. R. Lander, G. S. Bognaski, JHU/APL; K. Chao, SEAKR Engineering; G. M. Swift, Jet Propulsion Laboratory

The Samsung KM29U128T 128 Mbit and the Toshiba TC58256FT/DC 256 Mbit flashmemories were screened for use in the X2000 solid state recorder. Single Event Upset(SEU) and Total Ionizing Dose (TID) results are presented in this paper.

Dose Rate and Bias Dependency of Total Dose Sensitivity of Low DropVoltage RegulatorsS. S. McClure, A. Johnston, Jet Propulsion Laboratory; J. L. Gorelick, Hughes Space andCommunications Company; Ron Pease, RLP Research

Total dose tests of six different low dropout voltage regulators show sensitivity toboth dose rate and bias during exposure. Behavior of critical parameters in differentdose rate and bias conditions is compared and the impact to hardness assurancemethodology is discussed.

Radiation Test Results for Candidate Spacecraft ElectronicsM. V. O’Bryan, C. M. Seidleck, M. A. Carts, Raytheon; K. A. LaBel, R. A. Reed, J. L. Barth,C. J. Marshall, D. K. Hawkins, A. Sanders, J. Forney, NASA-Goddard Space Flight Center; J. W. Howard, H. S. Kim, Jackson and Tull; R. Ladbury, Orbital Sciences Corporation; P. Marshall, Consultant; D. Roth, E. Nhan, J. Kinnison, Applied Physics Laboratory; K. Sahu, S. Kniffin, Unisys Federal Systems

We present data on the susceptibility of a variety of candidate spacecraft electronicsto proton and heavy-ion induced single-event effects (SEE), proton-induced damage,and degradation resulting from total ionizing dose (TID) at low dose rates (0.006 to0.25 rads (Si)/s). Results reported include data on optoelectronics, commercialCMOS and bipolar ICs, mixed signal, and emerging microelectronics technologies.

W-17

W-18

W-19

W-20

W-21


31

A Compendium of Recent Optocoupler Radiation Test DataK. A. LaBel, R. A. Reed, C. J. Marshall, NASA-Goddard Space Flight Center; A. H. Johnston, Jet Propulsion Laboratories; D. L. Oberg, J. L. Wert, Boeing Corporation; G. K. Lum, Lockheed Martin Missiles and Space; M. V. O’Bryan, C. M. Seidleck, L. X. Nguyen, M. A. Carts, Raytheon; J. W. Howard, H. S. Kim, Jackson and Tull; R. Ladbury, Orbital Sciences Corporation; R. Koga, S. Crain, The Aerospace Corporation; J. R. Schwank, G. L. Hash, Sandia National Laboratories; S. Buchner, J. Mann, SFA; L. Simpkins, Naval Research Laboratory; M. D’Ordine, Ball Aerospace

We present a compendium of optocoupler radiation test data including total ionizingdose (TID), Single Event Transient (SET), and proton and neutron damage. Protondamage includes both ionizing and non-ionizing damage mechanisms.

Simulation of Spacecraft Radiation Shielding and Effects using Geant4P. Truscott, F. Lei, C. S. Dyer, DERA; C. Fergurson, R. Gurriaran, University ofSouthampton; P. Nieminen, E. Daly, ESA; J. Apostolakis, S. Giani, CERN; M. G. Pia, CERN, (INFN); L. Urban, CERN, (KFKI); M. Maire, LAPP

This paper describes developments in the new-generation Monte Carlo particle trans-port code, Geant4, that are being sponsored by the European Space Agency to simu-late radiation shielding and effects in spacecraft.

Radiation Damage and Annealing in 1310 nm InGaAsP/InP LasersK. Gill, C. Azevedo, G. Cervelli, R. Grabit, F. Jensed, F. Vasey, CERN

Radiation damage in 1310 nm InGaAsP multi-quantum-well lasers induced by0.75 MeV neutrons is compared with the damage from other radiation sources. Theannealing behavior is then characterized both in terms of temperature and forward-bias current dependence.

High-Energy Electron Effects on Charge Injection DevicesKyle B. Miller, Mike Duncan, Charles Van Houten, Ball Aerospace and TechnologyCorporation; Joe Carbone, CIDTEC Inc.

Charge Injection Devices were tested for transient, total dose, and displacement dam-age effects using high-energy electrons. The devices had acceptable image qualityafter 1 Mrad (Si) and operated during fluxes up to 8 x 109 electrons/cm2-s.

END THURSDAY SESSIONS

RADIATION EFFECTS COMMITTEE OPEN MEETING

W-22

W-23

W-24

W-25

5:00 PM

5:45 - 7:15 PMEXPOSITION HALL B AND C

Technical Program FridayTechnical Program Friday

32

INVITED TALK8:15 - 9:05 AM

SESSION J9:15 AM

J-19:25 AM

The Promise of SmallDr. Daniel Hastings, MIT, Professor of Aeronautics and Astronautics and EngineeringSystems

The world of space is in the throes of an ongoing revolution. Commercial space bysome measures has already overtaken Government space and is having a dramaticimpact on investment in the Government arena. In addition, the technology of smallthings is continuing to dramatically improve the capability of micro and nanosatel-lites. This improvement in capability means that we can envisage an era where smallsatellites are no longer toys but where they can accomplish many of the missions oflarger, expensive satellites. In addition they can accomplish new classes of missionswhich we cannot currently undertake. Part of this will come about by making clus-ters of nanosatellites work together to accomplish the functions of much larger satel-lites. This trend is of course very similar to what has happened in the computerindustry where groups of PCs can now do what only mainframes were able to do.The talk will discuss all of these trends and project a vision for the future based on aspace economy oriented around appropriate mixes of nano, micro and large satel-lites.

Dr. Daniel Hastings is currently Professor of Aeronautics and Astronautics at MIT.He served as Chief Scientist of the Air Force from 1997 to 1999. He received his Ph.D.in 1980 from MIT in Aeronautics and Astronautics. From 1980-1985 he worked forPhysical Sciences Inc. and Oak Ridge National Laboratory in the fields of laser-mate-rial interactions and fusion plasma physics. He has some 30 publications in theseareas. In 1985 he joined the Aeronautics and Astronautics faculty at MIT as anAssistant Professor. His research has concentrated on issues related to spacecraft-environmental interactions, space propulsion, space systems engineering and spacepolicy. He has published some 50 papers and a book in the field of spacecraft-envi-ronment interactions and several papers in space propulsion and space systems. Heis widely recognized for his work on tethers, plasma contactors and high voltage arc-ing on solar arrays. His recent research has concentrated on issues of space systemsand space policy. He is a Fellow of the AIAA and a member of the InternationalAcademy of Astronautics. He is serving as a member of the NASA Space ScienceAdvisory Committee and the National Academy of Engineering Board ofEngineering Education. He is a consultant to the Institute for Defense Analysis andOrbital Sciences Corporation.

SINGLE EVENT EFFECTS, MECHANISMS AND MODELINGSESSION INTRODUCTIONChair: Gary Swift, Jet Propulsion Laboratory

The Effects of Nonphysical Carrier Velocities in High-Gradient SingleEvent Track SimulationsX. W. Zhu, L. W. Massengill, C. R. Cirba, Vanderbilt University

In this paper we discuss the effect of diffusion velocity on the modeling of ion trackstructures in finite-element, device-level SEU charge collection simulations.


33

J-29:40 AM

J-39:55 AM


J-410:30 AM

J-510:45 AM

J-611:00 AM

J-711:15 AM

Theoretical Determination of the Temporal and Spatial Structure ofAlpha-Particle Induced Electron-Hole Pair Generation in SiliconP. Oldiges, R. Dennard, D. Heidel, B. Klaasen, F. Assageraghi, M. Ieong, IBM

Physics-based modeling of the impact ionization process in silicon was performed todetermine the time constraints and radial distribution of electron-hole pairs after ana-particle strike. The implication is the creation of a higher concentration of electron-hole pairs at shorter times that causes stronger shunting effects.

Cosmic Ray Neutron Multiple-Upset Measurements in a 0.6 micronCMOS ProcessPeter Hazucha, Christer Svensson, Electronic Devices Group

A new test chip was designed and fabricated for Multiple Upset (MU) measure-ments. The chips were irradiated with atmospheric-like neutrons at WNR. MU andSEU dependence on the diffusion type (N or P), supply voltage VCC, and criticalcharge QCRIT was measured.

BREAK

Simulation of Single-Event Upsets in an AM2901 Microcontroller CircuitJie Meng, Lloyd Massengill, Bharat L. Bhuva, Vanderbilt University

Using SEUTool (a VHDL-level, probabilistic simulator of single-event fault propaga-tion in combinational circuitry), we have performed a single-event study on theAM2901, a 4-bit microcontroller. Analysis shows interesting general trends for sin-gle-event upset effects in complex combinational/sequential circuits.

Analysis of Single-Event Transients in Analog CircuitsP. Adell, R. D. Schrimpf, H. J. Barnaby, Vanderbilt University; R. Marec, P. Calvel, C. Barillot, O. Mion, Alcatel Space Industries; C. Chatry, TRAD

A new methodology for understanding single-event transient phenomena in analogcircuits is described. Experimental data from the National Semiconductor LM124operational amplifier are used to illustrate the method.

A Model for Single-Event Transients in ComparatorsA. H. Johnston, G. M. Swift, T. F. Miyahira, L. D. Edmonds, Jet Propulsion Laboratory

A model is developed for single-event transients in comparators for a wide range ofinput voltage and output loading conditions, using two different internal mecha-nisms. The results agree with space data in an application on the Cassini spacecraft.

Mechanism For Single-Event Burnout of Bipolar TransistorsS. Kuboyama, T. Suzuki, S. Matsuda, National Space Development Agency of Japan; T. Hirao, Japan Atomic Energy Research Institute

The mechanism for single-event burnout (SEB) of bipolar junction transistors (BJTs)were investigated with extensive experiments and numerical simulations. Theresults indicated that the SEBs were caused by a newly identified regenerative feed-back mechanism without avalanche multiplication effect.


34

J-811:30 AM

J-911:45 AM

J-1012:00 PM

J-1112:15 PM

POSTER PAPERS

PJ-1

Analysis of SEB and SEGR of Super-Junction MOSFET's - The IdealDevice for Space ApplicationS. Huang, G. A. J. Amaratunga, F. Udrea , Cambridge University

The electric field distribution in super junction power MOSFETS is analyzed usinganalytical modeling and numerical simulations. Single-event burnout (SEB) and sin-gle-event gate rupture (SEGR) and studied in this device. This device is much lesssensitive to SEB and SEGR compared to standard power MOSFETS. The physicalmechanism is explained.

Heavy Ion Irradiation of Thin Gate OxidesM. Ceschia, A. Paccagnella, L. Bertodero, Dipartimento di Electtronica e Informatica; A. Candelori, J. Wyss, Universita di Padova; G. Ghidini, STMicroelectronics

Radiation induced Soft Breakdown has been studied on thin gate oxides (4-10 nm).The gate current-voltage characteristics and the gate current time dependence havebeen analyzed and compared with those found in electrically stressed devices.

Charge-Collection Characteristics of Low-Power, Ultra-High Speed,Metamorphic AlSb/InAs High-Electron Mobility Transistors (HEMTs)Dale McMorrow, J. Brad Boos, Ming-Jey Yang, Brian R. Bennett, Joseph S. Melinger, Naval Research Lab; Alvin R. Knudson, Stephen Buchner, SFA

Picosecond laser-induced charge-collection dynamics are measured for a new high-performance InAs-based technology. The mechanisms of charge-collection are dis-cussed and compared to those of GaAs FETs.

An Attempt at Single Event Hardening of SiGe HBT Logic for Operationin the Gigabit per Second Regime: Lessons LearnedPaul Marshall, Marty Carts, NRL/SFA; Arthur Campbell, NRL; Ryan Steward, BarbaraRandall, Barry Gilbert, The Mayo Foundation

This unsuccessful attempt at SEE hardening of SiGe digital logic provides the firstreported indication of the level of sensitivity in this important technology.Characterization over data rate up to 3 Gbps and over a broad range of LETs provides important clues to upset mechanisms and implications for upset rate predictions.

Calculation of Heavy Ions Induced Leakage Current in n-MOSFETsJ. G. Loquet, J. P. David, ONERA; R. Briand, P. Fouillat, IXL-Universite Bordeaux 1

This paper presents a new method to simulate the permanent degradation of an n-MOSFET by a heavy ion and its post-irradiation behavior, and proposes to use it todetermine the sensitivity of future technologies to leakage current induced failures.


35

PJ-2

PJ-3

PJ-4

12:30 PM

Clock Frequency Dependence of Single-Event-Transient InducedMemory UpsetsJ. J. Wang, F. Dhaoui, J. McCollum, W. Wong, B. Cronquist, R. Lambertson, E. Hamdy,Actel Corporation; R. Katz, NASA/Goddard; I. Kleyner, Orbital Sciences Corporation

The Single Event Transient (SET) in a global clock circuit of a FPGA device is investi-gated by experiment and computer simulation. Using a three-dimensional mixed-mode simulator, the window of opportunity for clock-SET induced upsets can bequalified for the upset-rate prediction.

A Digital CMOS Design Technique for SEU HardeningM. P. Baze, Boeing Space and Communications; S.P. Buchner, SFA; Dale McMorrow, NRL

A new cell design technique is described which may be used to create SEU hardenedcircuits. The technique uses isolated well transistors to prevent transients in combi-national logic from reaching the output node.

Simulation of SEE-Induced Charge Collection in UHV/CVD SiGe HBT'sGuofu Niu, John D. Cressler, Alabama Microelectronics Science and Technology Center;Munir Shoga, Hughes Space and Communications; Kay Jobe, Peter Chu, David L. Harame,IBM Microelectronics

This paper presents quasi-3D simulation results of SEE-induced charge collection inUHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant frac-tion of electrons can be collected by the emitter rather than the collector.

END OF CONFERENCE

RESGRESG

What is the Radiation Effects Steering Group?

The annual IEEE International Nuclear and Space Radiation Effects Conference isunique in that for the past 37 years it has been run entirely by volunteers. TheConference General Chairman and his entire Conference Committee (TechnicalProgram, Short Course, Local Arrangements, Finance, Awards) are all full-time scien-tists and engineers who have volunteered to take on the task of bringing you aworld-class technical conference without reimbursement of any kind. Moreover, it isour policy that once a person has done a particular conference job, he or she will notfill that position again for another NSREC. So, our conference committee is not onlystaffed by volunteers; it is staffed entirely by first-time volunteers. We are convincedthat this arrangement is in no small measure responsible for keeping the NSRECfrom having become stale and predictable over the past third of a century. Turningover the entire conference organizing committee each year keeps the conference freshand interesting and encourages the implementation of new ideas.

However, the down side of this management approach could easily be the loss ofcontinuity from year to year. This is where the Radiation Effects Steering Group(RESG) comes into play by providing the long-term experience necessary for keepingthe NSREC on a true course. The RESG consists of seven voting members who areelected by you, the members of the IEEE NPSS Radiation Effects committee to servethree-year terms: the Chairman (who automatically advances to this position afterhaving served for three years as Vice-Chairman), the Vice-Chairman, the Secretary,the Past Chairman (who has already served six years on the RESG as Vice-Chairmanand Chairman), and the three Members-at-Large who serve overlapping three-yearterms. Although it is not a requirement, it is usually true that RESG members willhave served in one or more major NSREC conference committee chairmanships, sothe total number of years of experience on the RESG is considerable.

The current membership of the RESG is listed near the back of this conferencebrochure. We will all be at the conference where we will be easy to recognize by ourdistinctive blue shirts. If you have any issues regarding our conference that youwould like to discuss with the RESG, please feel free to stop any of us during breaksor the social events. We are always interested in hearing from our conference attendees.

Dale G. PlatteterExecutive Vice Chairman

Klaus G. KerrisChairman

NEWS FROM THE RADIATION EFFECTS STEERING GROUP (RESG)

36

RESGRESG

37

The RESG held its annual Fall meeting on October 21 and 22, 1999, at the SilverLegacy Resort in Reno, Nevada. The meeting agenda included reports and plansfrom the chairmen of the 1998 through 2002 NSRECs, as well as discussions of con-ference guidelines and policies.

Ron Schrimpf of Vanderbilt University, 1999 Conference General Chairman, reportedon the 36th annual NSREC which was held July 12-16, 1999, at Norfolk Virginia. Theattendance of 601 was the second highest since 1992, continuing a four-year trend ofrising attendance.

Marty Shaneyfelt, 2001 Conference General Chairman, reported that the 38th annualIEEE NSREC will be held July 16-21 at the Westin Bayshore Hotel in Vancouver,British Columbia; the first time that an NSREC will have been held outside theUnited States. Technical Program Chairwoman Janet Barth of NASA-Goddard andShort Course Organizer Paul Dodd of Sandia, are planning an excellent technical pro-gram. Local arrangements and an extensive social program are being planned by JoeBenedetto of UTMC.

Ken Hunt of the Air Force Research Laboratory, 2002 Conference General Chairman,reported that possible venues of the 2002 NSREC include Phoenix and Scottsdale,Arizona, and Tampa, Florida.

For the most current information on the Nuclear and Space Radiation EffectsConference, please visit our web site at www.nsrec.com.

OTHER RESG NEWS

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AwardsAwards

1999OUTSTANDINGPAPER AWARD

1999MERITORIOUS

PAPER AWARDS

1999DATA WORKSHOP

PAPER AWARD

SPECIAL RECOGNITION

Angular and Energy Dependence of Proton Upset in OptocouplersAllan Johnston, Tetsuo Miyahira, Gary Swift, Steve Guertin and Larry Edmonds, NASA’s Jet Propulsion Laboratory

A Model of Radiation Induced Leakage Current (RILC) in Ultra-Thin Gate OxidesL. Larcher, University of Modena; A. Paccagnella, M. Ceschia, Universita di Padova; and G. Ghidini, ST Microelectronics

Enhanced Low Dose Rate Sensitivity (ELDRS) of Linear Circuits in a Space EnvironmentJ.L. Titus, D. Emily, J. F. Krieg, T. Turflinger, Naval Sea Systems Command - Crane Div.; R. L. Pease, RLP Research; and A. Campbell, Naval Research Laboratory

BUSFET - A Radiation-Hardened SOI TransistorJ. R. Schwank, M. R. Shaneyfelt, B.L. Draper, and P. E. Dodd, Sandia National Laboratories

Recent Radiation Damage and Single Event Effect Results forMicroelectronicsM. V. O'Bryan and C. M. Seidleck, Raytheon Systems Corp.; K. A. LaBel, R. A. Reed, J. L. Barth, C. J. Marshall, and D. K. Hawkins, NASA/GFSC; J. W. Howard and H. S. Kim, Tull Chartered Engineers; M. Carts, SFA; P. W. Marshall, Consultant; and K. E. Forslund, Alcatel

SDRAM Space Radiation Effects Measurements and AnalysisB. G. Henson, P. T. McDonald, and W. J. Stapor, Innovative Concepts Incorporated

AwardsAwards

39

IEEE FELLOW

1999 RADIATION EFFECTS AWARD

RADIATION EFFECTS AWARD

One member of the radiation effects community was elected to the grade of IEEE Fellow on January 1, 2000.

Ronald D. SchrimpfVanderbilt University

A certificate will be presented to Mr. Schrimpf during the conference opening on Tuesday, July 25.

The 1999 NPSS Radiation Effects Award was presented to James P. Raymond for promoting the IEEE Nuclear and Space Radiation Effects Conference for 34 yearsthrough his example of conference leadership, short course leadership, and outstanding publications describing modeling of microcircuits in high dose-rate environments.

Nominations are currently being accepted for the 2001 IEEE Nuclear and PlasmaSciences Society (NPSS) Radiation Effects Award. The purpose of the award is to rec-ognize individuals who have had a sustained history of outstanding and innovativetechnical and/or leadership contributions to the radiation effects community.

The basis of the award is for individuals who have: (1) a substantial, long–term history of technical contributions that have had major impact on the radiation effectscommunity. Examples include benchmark work that initiated major research anddevelopment activities or a major body of work that provided a solution to a widelyrecognized problem in radiation effects; and/or (2) a demonstrated long–term histo-ry of outstanding and innovative leadership contributions in support of the radiationeffects community. Examples include initiation or development of innovativeapproaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the professional development of the membersof the radiation effects community.

A cash award and plaque will be presented at the IEEE NSREC at Vancouver, BritishColumbia, Canada in July 2001. Nomination forms are available electronically inPDF Format or in Microsoft Word97 format at http://www.nsrec.com/nominate.htm.Additional information can be obtained from Jim Kinnison, Member-at-Large for theRadiation Effects Steering Group. Jim Kinnison can be contacted at 443-778-6169.

Industrial ExhibitsIndustrial Exhibits

40

2000 NSREC’s Industrial Exhibit features the leading suppliers of radiation hardenedproducts, related materials, and services. The exhibit offers companies the opportu-nity to showcase their products, technologies and service to key technical and man-agement personnel associated with electronics used in space vehicles, military elec-tronics, and applications requiring radiation tolerance in harsh environments.

The Industrial Exhibit will be held Tuesday, July 25 and Wednesday, July 26 at theSilver Legacy Resort Hotel’s City Center Pavilion. This year, exhibitors can takeadvantage of increased conference attendee traffic made possible by severalfood/social functions held in the Pavilion. These activities include the IndustrialExhibit Reception, one continental breakfast, one buffet luncheon (Tuesday, 11:40 AMto 1:15 PM) and two conference breaks.

For more information regarding the 2000 NSREC Industrial Exhibit, contact:

Kate Hall Fitzgerald2000 NSREC Exhibits Chairperson(representing Lockheed Martin)703-367-2841 fax: [email protected]

Set-Up: Monday, July 24 1:00 PM – 6:00 PMTuesday, July 25 6:00 AM – 10:00 AM

Show Hours: Tuesday, July 25 11:40 AM - 5:00 PMTuesday, July 25 6:00 PM - 10:00 PM (reception)Wednesday, July 26 7:30 AM - 12:00 PM

Tear-down: Wednesday, July 26 12:00 PM

Please check our website (www.nsrec.com) for a current listing of companies exhibiting at 2000 NSREC.

Actel www.actel.com

Amptek, Inc. www.amptek.com

Babcock, Inc. www.babcockinc.com

Boeing Radiation Effects Laboratory www.boeing.com/asocproducts/radiationlab

Contraves Space AG www.ocag.ch

Data Device Corporation www.ddc-web.com

Defense Microelectronics Activity (DMEA) www.dmea.osd.mil

Directorate for Applied Tech, Test and Simulation 505-679-6692

E.M.P. Consultants 301-869-2317

Kate Hall Fitzgerald

EXHIBIT HALL HOURS

EXHIBITORS

Industrial ExhibitsIndustrial Exhibits

41

Eonic Systems, Inc. www.eonic.com

Honeywell www.ssec.honeywell.com

Integrated Systems Engineering, Inc. www.ise.com

International Rectifier www.irfgs.com

Intersil Corporation www.intersil.com

J.D. Instruments 505-255-9182

J.L. Shepherd and Associates www.jlshepherd.com

Lockheed Martin Space Electronics and Communicationswww.lmco.com/manassas/space

MICROPAC Industries, Inc. www.micropac.com

Mission Research Corporation www.mrcmicroe.com

NASA Marshall Space Flight Center www.see.msfc.nasa.gov

Northrup Grumman http://sensor.northgrum.co

Peregrine Semiconductor Corporation www.peregrine-semi.com

Sandia National Laboratories www.sandia.gov

SILVACO International, Inc. www.silvaco.com

Space Electronics, Inc. www.spaceelectronics.com

Teledyne Electronic Technologies www.teledynemicro.com

TEMIC Semiconductors www.temic-semi.com/nt/ams

UTMC Microelectronic Systems www.utmc.com

Xilinx, Inc. www.xilinx.com

EXHIBITORS

42

Conference InformationConference Information

Several meeting rooms are available for use by NSREC attendees during the confer-ence week at the Silver Legacy Resort. All audiovisual equipment and refreshmentsmust be coordinated through the hotel and are the responsibility of the attendee.Contact ETC Services at 303-770-2055 or send an e-mail message [email protected] to make meeting reservation in advance of the conference.To make a meeting room reservations during the conference, see the NSREC reservation desk.

A message board will be located in the lobby just outside the main conference roomfor all incoming messages during the NSREC Short Course and Technical Sessions.Faxes can be sent and received through the hotel. Costs associated with faxes are theresponsibility of the attendee.

The 2000 NSREC will provide continental style breakfasts and refreshments at breaksduring the NSREC Short Course and Technical Sessions for registered attendees only.Continental breakfasts will begin at 7:30 AM Monday through Friday just outside themain conference room.

An extra attraction this year is a buffet lunch served at the Industrial Exhibit hall inthe Pavilion, across the street from the main conference facility. This will be served toregistered conference attendees only on Tuesday during the lunch break period.

The IEEE NSREC Radiation Effects Committee will hold its Open Meeting in themain conference room from 5:45 PM to 7:15 PM on Thursday, July 27. All conferenceattendees are encouraged to attend the Open Meeting to discuss this and future IEEENSREC Conferences. There will be an election for Junior Member-at-Large on theRadiation Effects Committee. Nominations will be taken from the floor. All NPSSmembers present are eligible to vote. The newly elected Steering Committee mem-bers will be introduced. Refreshments will be provided.

The Silver Legacy Resort has a Business Center located on the floor below the lobbyadjacent to the valet parking pick up. The Center’s hours of operation are 7:00 AM to7:00 PM Monday to Friday, and 8:00 AM to noon on Saturday. Should conferenceparticipants have fax and/or copy needs beyond those hours, the Silver Legacy FrontDesk staff would be happy to assist. Other services available from the BusinessCenter include computer time, computer equipment rental, and secretarial services.Costs associated with the Business Center services are the responsibility of theattendee.

ROOMS FOR SIDE MEETINGS

MESSAGES

775-325-7505FAX: 775-325-7474

CONTINENTAL BREAKFAST AND COFFEE BREAKS

INDUSTRIAL EXHIBIT LUNCH

RADIATION EFFECTS

COMMITTEE OPEN MEETING

BUSINESS CENTER

775-325-7275FAX: 775-325-7474

Registration and TravelRegistration and Travel

43

CONFERENCE REGISTRATION

ETC SERVICES, INC.7731 SOUTH COVE CIRCLE

LITTLETON, CO 80122

303-770-2055FAX: 303-741-5890

REGISTRATIONCANCELLATION POLICY

To pre–register for NSREC, complete the conference registration form enclosed in thisbooklet. Please note that registration fees are higher if payment is received after June 23, 2000.

Mail the Conference registration form with your remittance to ETC Services, Inc.Faxed registrations will be accepted with credit card payment. The registration form,with payment, should be mailed to arrive no later than seven days prior to theConference, or arrangements should be made to hand carry fees for on–site registra-tion. Telephone registrations will not be accepted. You can also register via the inter-net, providing all of the credit card information is included. Visit the NSREC websitefor on-line registration at www.nsrec.com

Registration fees should be made payable to the “2000 IEEE NSREC” and must bein U. S. funds only. Advance payment of registration and activity fees should be byone of the following: (1) check made out in U. S. dollars and drawn on a domestical-ly–located bank, (2) U. S. Money Order, or (3) Mastercard, VISA, or American Expresscredit card. Please note that there is no longer an additional charge for credit cardpayments.

On–site registration for the Conference will be conducted in the registration andrefreshments area across from the Grand Exposition Hall of the Silver LegacyConference Center (refer to map) on the following schedule:

Sunday, July 23 5:00 PM – 9:00 PM

Monday, July 24 7:30 AM – 4:00 PM6:00 PM – 9:00 PM

Tuesday, July 25 7:30 AM – 5:30 PM

Wednesday, July 26 7:30 AM – 3:00 PM

Thursday, July 27 7:30 AM – 3:00 PM

Friday, July 28 7:30 AM – 10:00 AM

A $25 processing fee will be withheld from all refunds. Due to advance financialcommitments, refunds of registration fees requested after June 23, 2000, cannot beguaranteed. Consideration of requests for refunds will be processed after the confer-ence. To request a refund, you must notify ETC Services by FAX at 303-741-5890.


44

HOTEL RESERVATIONS

SILVER LEGACY RESORTRENO, NEVADA

775-329-4777800-687-8733

FAX: 775-325-7177

AIRPORT INFORMATION

TRANSPORTATION ANDDIRECTIONS

PARKING

NSREC technical and social events will be held at the Silver Legacy Resort. The con-ference room rate is $84.00 per night plus tax, double occupancy. There is a $10.00per person charge for third or fourth persons in the room, but children 12 years ofage and under are free. A block of rooms has been set aside at Government per diemrates for U.S. Government attendees. Proof of Government employment is required. TheSilver Legacy is extending the rates from Friday, July 21, 2000 through Saturday, July29, 2000.

Please call the Silver Legacy and ask for the "IEEE Nuclear Space Radiation EffectsConference" block of rooms. Reservations must be guaranteed. The cut-off date forroom reservations is June 23, 2000. After that date, room accommodations will beconfirmed on a space-available basis and the conference rate will not be guaranteed.PLEASE BOOK EARLY!!

The Reno/Tahoe Airport has ten major airlines servicing arrivals and departuresmaking your travel arrangements very flexible. The airport is approximately 5 milesfrom the Silver Legacy Resort.

Upon arrival in Reno, you have a choice of travel. You can take the hotel's free shut-tle from the Airport to the Resort: pick-up is just outside the North exit from the bag-gage claim area and departs every half hour on the quarter hour. Or you can choosea rental car from one of the nine on-site rental agencies. If you are driving from theAirport, it is very easy to find the Resort by exiting the Airport, turn North on U.S.395 towards Susanville (to I-80). Travel approximately 1.5 miles and exit to I-80 W(exit 68); go west 1.3 miles and exit on the Downtown Reno/North Virginia St exit(exit 13), merge onto 8th Street and go to the third set of traffic lights and turn leftonto North Sierra. Travel South about four blocks past 5th Street and enter the freeparking facility to the right.

There is ample free parking in the Silver Legacy Resort complex and an easy accesselevator to the lobby. If for some reason the parking facility is full, the connectinghotels (El Dorado and Circus-Circus) have parking to the south and north respectively.


45

AIRLINE DISCOUNT800-433-5368

I.D. CODE G4540

RENTAL CAR DISCOUNT800-277-7368

GROUP ID NUMBER 6800282

Southwest Airlines is the sole official airline for the 2000 NSREC and is offering a10% discount on most of its already low fares for air travel to and from NSREC. Youor your travel agent may call Southwest Airlines Group and Meetings Reservationsat 800-433-5368 and reference the assigned I.D. Code G4540. Reservations SalesAgents are available 8:00 AM – 5:00 PM Monday through Friday, or 9:30 AM – 3:30PM Saturday and Sunday. You must make reservations five or more days prior totravel to take advantage of this offer.

■ Travel dates are between July 17 -August 3, 2000.Destination is Reno/Tahoe International Airport (RNO) only.

■ Discounts are from all points on Southwest Airlines Route System.NOTE: Additional restrictions may apply on international travel.

■ A 10% discount off unrestricted applicable coach fares with at least five daysadvance reservations/ticketing required.

■ These discounts are valid provided all rules and restrictions are met. Thesediscounts are not combinable with other discounts or promotions.

National Car Rental has been selected as the official rental car agency for the 2000NSREC. For reservations and information call National at 800-277-7368 and mentionGroup ID number 6800282. The rentals are all unlimited miles and the classes andrates can be seen below.

Rental Car Class Daily Weekend (Thu-Sat) Weekly (5-7 days)Per Day Per Day Per Week

Subcompact $24.00 $23.00 $125.00Compact $25.00 $24.00 $129.00Mid-size $29.00 $28.00 $160.00Full-size 4 door $34.00 $33.00 $175.00Full-size 2 door $32.00 $31.00 $170.00Premium $38.00 $37.00 $199.00Mini-van $41.00 $41.00 $199.00

Rates are available for the dates of July 20 through July 31, 2000 and are applicableonly in the Reno area National Car Rental agencies. These rates are non-discountableand may not be used with certificates. Specialty vehicles may need to be guaranteedwith a major credit card at time of reservation.

Standard age, driver and credit card qualification apply. Minimum rental age at mostU.S. locations is 25. National may elect not to rent to any person who does not meetNational’s safe driver criteria, or who has incurred one or more insurance losses withNational. Unless contrary to law, any liability insurance available to the renter orauthorized driver will apply to all rentals under this agreement. Rates do not includetaxes, government or airport fees or optional charges such as refueling servicecharges, Loss Damage Waiver, Personal Accident Insurance/Personal EffectsCoverage, Supplemental Liability Insurance, or any other optional items or services.

47

2000 IEEE NSREC andShort Course Registration Form

Late fee REQUIRED if payment received after June 23, 2000.

Early Late

IEEE Member

Short Course $230 $260 $________

Technical Sessions $285 $360 $________

Non-IEEE Member

Short Course $285 $310 $________


Full-Time Students who are IEEE Members

Short Course $105 $105 $________


TOTAL AMOUNT ENCLOSED: $________

Enclosed is a check or money order in U.S. DOLLARS ONLY, drawn on or payable through a U.S. bank. Payable To: 2000 IEEE NSREC.

Charge registration fees to my credit card:

American Express Master Card Visa

Card No. _____________________________________

Expiration Date________________________________

Signature _____________________________________

If your company or agency is going to pay by check at alater date, please do not complete the credit cardportion of this form. Only one form of paymentis needed.

REGISTRATION FEES

PAYMENT OF FEES

Name___________________________________________Last Name First Name Middle Initial

Name to appear on badge __________________________________

Company/Agency _________________________________

Mailing Address ___________________________________

___________________________________

City ____________________________________________

State___________________Zip Code_________________

Country_________________________________________

Telephone Number________________________________

FAX Number_____________________________________

E-mail Address____________________________________

IEEE MEMBERSHIP

I am an IEEE Member. ___________________________Membership Number

I am not a Member, but I wish to join the IEEE.

Non-members must register at the non-memberrate, but if you join during the conference, you will receivea complimentary half-year membership in IEEE and in theIEEE Nuclear and Plasma Sciences Society.

CANCELLATIONS

A $25 processing fee will be withheld from all refunds.Due to advance financial commitments, refunds of reg-istration fees requested after June 23, 2000, cannot beguaranteed. Consideration of requests for refunds willbe processed after the conference.

Mail or FAX this form and your remittance(payable to 2000 IEEE NSREC) to:

ETC Services, Inc.7731 South Cove Circle

Littleton, CO 80122

303-770-2055 FAX: 303-741-5890

49

2000 IEEE NSRECActivities Registration Form

Mail or FAX this form and your remittance(payable to 2000 IEEE NSREC) to:

ETC Services, Inc.7731 South Cove Circle

Littleton, CO 80122

303-770-2055 FAX: 303-741-5890

Late fee REQUIRED if payment received after June 23, 2000.We strongly encourage early registration; note thatthe number of tickets available after pre-registra-tion for each event is limited. Children must be accom-panied by an adult during all tours and social events.

Number TotalEarly Late Attending Cost

Nevada Nights Conference Reception: Monday, July 24Adult/child $0 $0 ______Child care (age 0-10) $0 $0 ______

Virginia City Tour:Tuesday, July 25Adult/child (age 12 up) $25 $30 ______ $______Child (age 3-11) $15 $18 ______ $______Child (age 0-2) $0 $0 ______

Fashions of the Silver Queen:Wednesday, July 26Adult (Only) $20 $25 ______ $______

Party on the Ponderosa:Wednesday, July 26Adult/child (age 12 up) $30 $35 ______ $______Child (age 3-11) $20 $23 ______ $______Child (age 0-2) $0 $0 ______

Lake Tahoe M.S. Dixie Paddleboat:Thursday, July 27Adult/child (age 12 up) $15 $18 ______ $______Child (age 3-11) $8 $10 ______ $______Child (age 0-2) $0 $0 ______

TOTAL AMOUNT ENCLOSED: $________

Enclosed is a check or money order in U.S. DOLLARS ONLY, drawn on or payable through a U.S. bank. Payable To: 2000 IEEE NSREC.

Charge registration fees to my credit card:

American Express Master Card Visa

Card No. _____________________________________

Expiration Date________________________________

Signature _____________________________________

ACTIVITY FEES

PAYMENT OF FEES

Conference Participant _______________________________________

Company/Agency _________________________________

Address _________________________________________

City ____________________________________________

State___________________Zip Code_________________

Country_________________________________________

Telephone Number________________________________

FAX Number_____________________________________

AccompanyingPersons _________________________________________

Name

Please list ages for children under age 21 only

________________________________________Name Age

________________________________________Name Age

________________________________________Name Age

CANCELLATIONSTo encourage advanced registration for conferencesocial activities, we will refund all activity fees for con-ference attendees and/or their companions who forany reason are unable to attend the conference. Ifyour plans change after your activities registration formis submitted, to receive a refund you must notify ETCServices by FAX at 303-741-5890 no later than July 6(do not FAX changes after Thursday, July 6). Or notifythe conference registration desk when picking up yourregistration materials (but no later than 24 hoursbefore the scheduled activity).

Child care will be provided only during the Monday night ConferenceReception. Child care will be available at no charge for those who pre-register their children by June 15, 2000 (names and ages must be includedon this registration form). If you do not pre-register, we cannot guaranteethere will be space for your child. For those who wish to arrange forchild care at other times during the Conference, contact Ms. Betty Wesleyat Dial-a-Sitter Professional Child Care Services. 775-359-8051.

Social ProgramSocial Program

51

The 2000 NSREC Committee has made arrangements for everyone to enjoy a taste ofthe old west, outdoor grandeur, and high rolling games; fun for every one of all ages.We very strongly encourage you to register as early as possible for the social events.While last minute accommodations can be made, transportation concerns and prepa-rations are necessary to insure the best time for all. Therefore additional tickets willbe limited at the Registration Desk. Late fees apply if payment is received after June23, 2000. Children must be accompanied by an adult during all tours and socialevents.

Short Course ReceptionPlease join us for refreshments in the downstairs Exhibition Hall. The registrationdesk will be open from 5:00 PM to 9:00 PM, and refreshments will be served from6:00 PM to 9:00 PM. So please come register early, enjoy the complimentary food anddrinks, and say hello to everyone whom you may not have seen since last year.

Conference ReceptionIn the downstairs Exposition Hall, Conference attendees and their guests are invitedto renew old acquaintances and make new ones. There will be arcade games, danc-ing, food, drink, and lessons for several of the less known games of chance from thecasino staff. Dress is casual.

Child care will be available at no charge for those who pre-register their children byJune 23, 2000 (names and ages must be included on the Conference registrationform). If you do not pre-register, we cannot guarantee that there will be space foryour child. For those who wish to arrange for child care at other times during theConference, contact Ms. Betty Wesley at Dial-a-Sitter Professional Child CareServices. The telephone number is 775-359-8051.

SUNDAY JULY 236:00 TO 9:00 PM

MONDAY, JULY 247:00 TO 10:00 PM

NEVADA NIGHTS

CHILD CARE

Steve ClarkLocal Arrangements Chairman

Jeff BlackAssistant Local Arrangements

Social ProgramSocial Program

52

Conference SocialDuring the 60’s, one of the most popular television shows was Bonanza. Set on theNorth East Bank of Lake Tahoe, the Ponderosa Ranch was home of the "Bonanza"and "Bonanza: The Return" television series! Visit the Cartwright ranch house! Strolldown Main Street and stop by the Comstock Creamery Ice Cream Parlor, the SilverDollar Saloon and the General Store. Children will enjoy the Barnyard Pettin' Farmand Hoss' Mystery Mine, as well as the Moonshine Shootin' Gallery! Buses will leavethe Silver Legacy Resort’s valet pick up downstairs starting at 5:15 PM with stag-gered departures. The bus ride will take 45-60 minutes. Tour ambassadors will tellyou the local history on your way to the ranch. The route will take everyone througheither Carson City or through Truckee for some scenic views along the way. Upon

WEDNESDAY, JULY 265:15 TO 11:00 PMPARTY ON THE

PONDEROSA

ACTIVITIES CANCELLATION POLICY

© P

onde

rosa

Ran

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arrival, the buses will drop you off for a tour of the ranch house with the Ponderosastaff. When you have finished, you can meander back to the lower section for somesouvenir shopping and sightseeing. There will be multiple buffet lines and plenty ofroom to sit and eat while visiting with your companions and friends. The buffetstarts at 7:00 PM. A live country band will entertain in the Saloon with plenty ofdance floor. Refreshments of all kinds will be provided throughout the evening.Outside fortune tellers, a gunfight show, and games will entertain everyone. Buseswill begin to leave at 9:00 PM, as they completely fill. The final bus departs at 10:00PM. The route back takes you by some fantastic views of Lake Tahoe, then continuesdown the eastern slope for breath-taking views of the Reno/Sparks valley. It is notrecommended that you drive your own vehicle, but parking is available at thePonderosa if you desire. This event is not limited, but pre-registration is highlyencouraged, for transportation planning. Tickets are available for all adults: $30.00(early)/$35.00 (late). Children three years through eleven years old are $20.00(early)/$23.00 (late). Children two and under are free. Dress is casual. We recom-mend walking shoes and a jacket. Temperatures are 65-70° in the evening at this alti-tude of 6500 feet. Please feel free to bring food and drink on the bus as none will beprovided. Strollers can be stored on the bus.

To encourage advance registration for conference social activities, we will refund allactivity fees for conference attendees and/or their companions who for any reasonare unable to attend the conference. If your plans change after your activities regis-tration form is submitted, request your refund by notifying ETC Services by FAX at303-741-5890 but no later than July 6 (do not FAX changes after Thursday, July 6).

Companion EventsCompanion Events

53

TUESDAY, JULY 259:30 AM TO 3:00 PM

VIRGINIA CITY

Get a taste of how this silver boom town and the times have changed since the 1850’s.Visit Virginia City and experience how it used to be during the wild days of the silvermining. Buses will leave from the Silver Legacy Resort’s valet pick up downstairs at9:30 AM and drive you to Virginia City where you can take a trolley tour of the town,join a guided tour of a local mine, and visit the many souvenir shops. You will enjoy

a buffet luncheon on the upper level of the Delta Saloon at 12:00 PM and hear a com-mentator describe the history of Virginia City and the local mining times. The buseswill leave from the front of the Delta Saloon at 2:00 PM to return to the Silver Legacywith time to freshen up for the Tuesday night activities. Dress is casual. Walkingshoes are recommended. Please feel free to bring food and drink on the bus as nonewill be provided. Strollers can be stored on the bus.

Come see what it was like to dress at the turn of the century, 1900 that is! An elegantluncheon will be served at the Silver Legacy Resort’s Sterlings Restaurant starting at11:30 AM. At 1:00 PM, you will be escorted to the hotel’s Comedy Club where youwill enjoy the fashions of the late 1800’s and early 1900’s, narrated by a superb MarkTwain impersonator. There will be no travel, and no fuss… just an enjoyable after-noon. The luncheon is adults only. Please see child care information on page 51.Shorts are not recommended.

WEDNESDAY, JULY 2611:30 AM TO 2:00 PM

LUNCHEON ANDFASHIONS OF THE

SILVER QUEEN

Companion EventsCompanion Events

54

THURSDAY, JULY 2711:45 AM TO 5:15 PM

PADDLE BOAT ON LAKE TAHOE

EXERCISE ROOM AND SWIMMING POOL

LAND AEROBICS AND KICK BOXING AEROBIC

EXERCISE

ACTIVITIES CANCELLATION POLICY

Now that you have seen Lake Tahoe from the shores, ride the M.S. Dixie Paddle Boatfrom the South Shore and see it from the water. The M.S. Dixie Paddle Boat providesyou an opportunity to explore the 22 mile long, 12-mile wide lake and view the beau-ty of the Lake on board Tahoe's newest and largest Mississippi paddlewheeler, com-plete with a glass-bottom for viewing the Lake. Also offered is an exclusive under-

water video, "The Sunken Treasures of Lake Tahoe." Enjoy the beauty of the moun-tains and bays from a totally different perspective. The buses will leave the SilverLegacy Resort’s valet pick up downstairs at 11:45 AM and return from the dock areastarting at 4:15 PM. You will return to the hotel by 5:15 PM to allow plenty of timefor your evening plans. We recommend walking shoes and a jacket. Please feel freeto bring food and drink on the bus as none will be provided. Strollers can be storedon the bus.

Located on the 4th floor of the Silver Legacy Resort is a fully equipped gymnasiumand outdoor swimming pool. There is a nominal fee for the gym, but the pool isavailable to everyone at no cost. Start your morning by working off those extra calo-ries you've enjoyed during the week. There are 20 free passes available to the spa forconference attendees on a first come, first served basis for each day of the conference.Please check at the NSREC Registration Desk for details.

Start your mornings off on a healthy note. Join Dave Bushmire on Tuesday andThursday mornings at 6:30 AM in the Silver Baron Meeting Room E (see map in thebrochure front inside cover for location) for an hour of low impact land aerobics (wesuggest a good quality exercise shoe). On Wednesday morning at 6:30 join Dave inthe Silver Baron Meeting Room E for an hour of kick boxing aerobic exercise. Thisactivity does not entail any contact whatsoever, it is just the newest craze in aerobicexercises. Enjoy the opportunity for improving the quality of your life and learnabout the latest findings concerning the value of land and kick boxing aerobic exercise.

To encourage advance registration for conference social activities, NSREC will refundall activity fees for conference attendees and/or their companions who for any rea-son are unable to attend the conference. If your plans change after your activitiesregistration form is submitted, request a refund by notifying ETC Services by FAX at303-741-5890 but no later than July 6 (do not FAX changes after Thursday, July 6).

Local ActivitiesLocal Activities

55

GENERAL INFORMATION Situated in the majestic Sierra Nevada Mountains, the breathtaking Reno/Sparks/Lake Tahoe area is not your average vacation destination. Minutes from world-famous Lake Tahoe, the Reno-Sparks community abounds with natural beauty andunlimited recreational opportunities. Settled first by the Washoe Indian tribe, Renowas a gathering area used for festivals and ceremonies. In 1859, it first gained promi-nence in Nevada when it was known as "Fuller's Ferry" and later "Lake’s Crossing."Eventually the town grew around the Truckee River as the wagons travelling to theComstock Mine in Virginia City had to load and unload supplies and food. In themid-1800's, Reno's growth was stimulated by the completion of the Central PacificRailroad over the Sierra Nevada Mountains and the mining boom of the ComstockLode. The news of a gold strike brought thousands of gold-rushers to and throughthe area. As the gold veins dwindled, the miners finally discovered that the heavy"blue mud," which fouled their gear and frustrated their efforts to get at the gold,was silver. This discovery helped admit the "Silver State" into the Union and theCivil War. As the Comstock Lode brought the railroad line and thousands of settlersinto the State of Nevada, it dominated the affairs of the state for about 40 years.However, by the turn of the century, the Comstock mine had been 20 years in irre-versible decline. Gold and silver strikes were being made at other places and thepopulation dwindled by 35% between 1880 and 1900. The town officials then beganto consider other ways to promote and exploit the empty land in Reno. Though the"gold-rush fever" is over, mining still "Works for Nevada" as many minerals and oilsare buried deep within the beautiful desert scenery. Known then as a town called the"End of the Track", Reno was incorporated as a city in 1903. The city was thenrenamed after General Jesse Lee Reno, a Union officer of the Civil War.

The tri-property of the Silver Legacy, Circus-Circus, and the El Dorado are three ofthe areas newest casinos and provide plenty of selections of your gaming choice.However, if you desire to try other casinos there are many within walking distance ofthe Silver Legacy Resort and several within minutes driving.

300 North Center Street, 775-334-2695.Just down the street from the Resort is the huge, new stadium where the U.S. nationalmen's and women's bowling tournaments are held. They also have a new 172-seatIMAX Theater with a screen 4 stories tall! Programs vary so check current schedules.

1 mile north of downtown Reno in Rancho San Rafael Park, 1502 Washington St.,775-785-5961.An adventure to explore! Enjoy panning for gold or riding the Log Flume! Visit theDiscovery Room where children can dress up in various period costumes! Also fea-tured are dinosaur exhibits, the Great Basin Mine Slide and a small petting zoo withchickens, sheep, miniature goats and pot belly pigs!

1 mile north of downtown Reno in Rancho San Rafael Park, 1502 Washington St.,775-785-4153.The ranch house museum offers various exhibits including a rare art collection. TheArboretum and Botanical Gardens are a floral retreat in which to relax.

Donner Pass near Truckee, CA, 530-587-3841.The State Park offers guided nature tours, camping facilities, picnic/barbecue areasand public restrooms. The Museum features interesting displays on emigrant lifeand a slide show of the 1846 ordeal of the Donner Party.

CASINOS

NATIONAL BOWLINGSTADIUM

WILBUR D. MAY GREAT BASIN

FAMILY ADVENTURE

WILBUR D. MAY MUSEUM AND ARBORETUM

DONNER MEMORIAL STATE PARK AND

EMIGRANT TRAIL MUSEUM


56

WILD ISLAND FAMILYRECREATION CENTER

DOWNTOWNRIVER WALK

HARRAH’S NATIONALAUTOMOBILE MUSEUM

ANIMAL ARK

Interstate 80 and Sparks Boulevard, 775-331-WILD or 359-2927.This is the ultimate family fun destination complete with video and arcade games,two 18 hole miniature golf courses, three go-cart raceways for all ages, and of course,the Wild Waters Super Slides featuring the Viper and Voodoo Express! MiniatureGolf: 18 holes - $3.95, 36 holes - $5.95. Raceway: Mini-Electric Race Cars - $1.50,Sprint Cars - $2.00, Indy Cars - $3.50.

10 Island Avenue, Downtown Reno (just 3 blocks south of the Silver Legacy Resort),775-334-2077.The area includes three blocks of public plaza featuring native Nevada wildliferelief’s, eight unique fountains, and landscaping all overlooking the Truckee River.

For those of you who wish to walk or jog for exercise, there is a scenic path startingfrom downtown that follows the Truckee River for several miles.

10 Lake St. (corner of Lake and Mill St.), 775-333-9300.This is the most comprehensive public display of automobiles in the WesternHemisphere, featuring more than 200 cars. There are 105,000 square feet on onelevel, located on the Truckee River in downtown Reno. Be sure to see the unique,state-of-the-art theater incorporating film and video with full-size automobile diora-mas in a visual odyssey of the automobile's impact on our life and times. The com-plex also includes landscaped gardens, a riverside cafe with outdoor dining and aMuseum Store. Admission is $7.50 for adults, $6.50 for seniors 62 and over, $2.50 forchildren ages 6-18, and free for children ages 5 and under accompanied by an adult.Hours: 9:30 AM - 5:30 PM, Mon - Sat; 10:00 AM - 4:00 PM, Sun.

1265 Deerlodge Rd., 775-969-3111.Since 1982, Animal Ark has functioned as a nature center where education programsare taught to local school districts, private schools, day care centers, scouts and othergroups. Viewing of the live animals reinforces the learning experience. Visitors gainunderstanding and respect for things that are wild. Hours are daily 10:00 - 4:30.Admission: $6.00 adults, $5.00 seniors and $4.00 children age 3-12, 2 and under arefree. Directions from Reno: take Highway 395 North to exit #78, Red Rock Road.Turn right and drive 11.5 miles. Turn right on Deerlodge, a gravel road, travel onemile to 1265.


57

FLIESCHMANPLANETARIUM

North Virginia Street (above Lawlor Event Center), 775-784-4812.Enjoy entertaining and informa-tive star shows in the Sky DomeTheatre, as well as telescopeviewing weekly! They have aunique gift shop featuringglow-in-the-dark constellationmaps, freeze-dried foods andmuch more! Call for currentstar and dome theatre shows!

Big Meadow - This 16-mile trek starts on the north side of Hwy 89, five miles south ofUs 50/Hwy 89 junction in Meyers. It follows the Mt. Rose trail then continues on toVerdi. Half of the trail is on logging roads, making this an excellent trip for mountainbikers.

Galena Creek - Located at the north entrance of Galena Creek Park on Hwy 431, thistrail climbs up Jones creek to the headwaters of White's Creek. This 8-mile hike isconsidered difficult.

Hobart Reservoir - This path is a continuation of the Marlette Lake trail and is placedon fire roads, making it good for mountain biking. Trout fishing is allowed in thelake. Trail length (including Marlette trail sequence) is 8 miles.

Marlette Lake - This trail begins at Spooner Lake Park on Hwy 28, north of its junc-tion with Hwy 50. This 5-mile hike is moderate.

Mt. Rose - The trailhead is located at the Mt. Rose Summit on the north side ofHwy 431, where a dirt road next to the maintenance building is located. This 12 mileround-trip hike takes you to the top of Mt. Rose and is considered difficult.

Ophir Creek - The path starts at Davis Creek Park, 17 miles south of Reno onHwy 395. The hike follows a canyon leading to two lakes, Rock Lake and Price Lake.This 6-mile hike is considered difficult.

Tahoe Rim Trail – When completed, this trail will cover more than 150 miles alongthe rim of the Tahoe Basin. There are two trailheads at Spooner Summit, one to thenorth and one to the south. Another trailhead is located at Tahoe City.

HIKING AND MOUNTAIN BIKING

TRAILS


58

GOLF COURSES If you would like to play golf, Reno offers many courses. Experience the many fla-vors of golf available in the area.

Brookside Public GC700 South Rock Blvd., Reno, 775-856-6009

Desert Lakes Golf Course4000 Farm District Rd., Fernley, 775-575-GOLF (4653)

Lake Ridge Golf Club1200 Razorback, Reno, 775-825-2200

Northgate Golf Club 1111 Clubhouse Dr., Reno, 775-747-7577

Rosewood Lakes Golf Course6800 Pembroke Dr., Reno, 775-857-2892

Sierra Sage6355 Silver Lake Blvd., Reno, 775-972-1564

Washoe County2601 Arlington Ave., Reno, 775-828-6640

Wildcreek Golf Course3500 Sullivan Lane, Sparks, 775-673-3100

The weather in the local area is usually very comfortable during this time of year.The temperature ranges from a low of approximately 50 degrees to a high of 90degrees. The humidity is around 65% in the morning and very quickly drops toabout 20% in the afternoon. The activities will be very comfortable, but it is recom-mended that you bring a lightweight jacket or windbreaker to break any chill in thehigh altitudes of the area at night. It would be advisable to take notice of the altitude;if you are not used to altitudes above 5000 feet, you should take caution in not overexerting yourself.

Child care will be provided only during the Monday night Conference Reception.Child care will be available at no charge for those who pre-register their children byJune 23, 2000 (names and ages must be included on the conference registration form).If you do not pre-register, we cannot guarantee there will be a space for your child.For those who wish to arrange for child care at other times during the Conference,contact Ms. Betty Wesley at Dial-a-Sitter professional Child Care Services. The tele-phone number is 775-359-8051.

WEATHER ANDCLOTHING

CHILD CARE

2000 Conference Committee2000 Conference Committee

59

General ChairRon PeaseRLP [email protected]

Technical ProgramArt CampbellNaval Research [email protected]

Local ArrangementsSteve ClarkAir Force [email protected]

Short CourseLew CohnDefense Threat [email protected]

PublicityTeresa FarrisUTMC [email protected]

AwardsEugene [email protected]

Industrial ExhibitsKate Hall FitzgeraldLockheed Martin SpaceElectronics [email protected]

Associate EditorMichael XapsosNaval Research [email protected]

Assistant EditorSteve WitczakSandia [email protected]

FinanceGerald HashSandia [email protected]

Guest EditorJanet BarthNASA-Goddard SpaceFlight [email protected]

Official ReviewersOfficial Reviewers

60

Len Adams, ESAJeff Babcock, Texas InstrumentsCatherine Barillot, Alcatel EspaceJanet Barth, NASA-GoddardSteve Bernacki, RaytheonFred Beteman, NISTFrancoise Bezerra, Centre National

d’Etudes SpatialesPeter Bradly, University of WollongongDon Brautigam, Air Force Research

LaboratoryDennis Brown, Naval Research

LaboratorySteve Buchner, SFA/NRLDoug Bush, MacDonald DettwilerJim Cable, Peregrine SemiconductorSteve Clark, NSWC-Crane DivisionThierry Corbiere, TemicCosmo Carlone, University de

SherbrookeJim Coss, Jet Propulsion

Laboratory/RetiredSusan Crain, The Aerospace

CorporationMary d'Ordine, Ball AerospaceEamonn Daly, ESA/ESTECJean Pierre David, ONERA/DESPRalf de Marino, ESARod Devine, CNET - France TelecomPaul Dodd, Sandia National

LaboratoriesHeather Dussault, Air Force Research

LaboratoryLaurent Dusseau, USTL/CEM2 and

University MontpellierSophie Duzillier, ONERA-CERTRobert Ecoffet, Centre National

d’Etudes SpatialesLarry Edmonds, Jet Propulsion

LaboratoryArt Edwards, Air Force Research

LaboratoryDave Emily, NSWC-Crane DivisionFederico Faccio, CernJean Fesquet, CEM2 and University

MontpellierOdile Feuilattre, Dassault ElectronicsOlivier Flament, CEADan Fleetwood, Vanderbilt UniversityChuck Foster, Indiana University

Cyclotron FacilityPascal Fouillat, University of BordeaGeorge Gardiner, LoralJean Gasiot, USTL/CEM2 and

University MontpellierJerry Gorelick, HughesPatric Griffin, Sandia National

Laboratories

Alessandro Paccagnella, PadovaUniversity

Philippe Paillet, CEASok Pantelides, Vanderbilt UniversitySlava Pershenkov, Moscow

Engineering InstituteEd Petersen, ConsultantJames Pickel, PRE AssociatesChristian Poivey, Matra MarconiMarius Pop, MacDonald DettwilerRobert Reed, NASA-GoddardJean-Gregoire Rioux, EMS

TechnologiesDave Roth, Johns Hopkins Applied

Physics LaboratoryFederic Saigne, University of ReimsMark Savage, NSWC-Crane DivisionLeif Scheick, Jet Propulsion LaboratoryHarald Schone, Air Force Research

LaboratoryRon Schrimpf, Vanderbilt UniversityJim Schwank, Sandia National

LaboratoriesJanet Sisterson, Harvard Proton

CyclotronSurinder Seehra, Lockheed MartinSelva Selvakumar, University of

WaterlooFred Sexton, Sandia National

LaboratoriesMarty Shaneyfelt, Sandia National

LaboratoriesWalter Shedd, Air Force Research

LaboratoryMunir Shoga, HughesE. C. Smith, ConsultantGerald Soelkner, SiemensBob Stahlbush, Naval Research

LaboratoryBill Stapor, ICIS. Subramaniam, Oregon State

UniversityDave Sunderland, HughesHenry Tang, IBMJeffrey Titus, NSWC-Crane DivisionRon Travis, RaytheonTom Turflinger, NSWC-Crane DivisionMichael Tverskoy, Univ. of St.

PetersburgAlan Tylka, Naval Research LaboratoryRaoul Velazco, TIMA/CNRSBarry Willits, RaytheonPeter Winokur, Sandia National

LaboratoriesWilliam Whitehead, Bristol AerospaceFrankie Wong, LoralTed Wrobel, Sandia National

LaboratoriesGeun Youk, Inventors' Enterprise

Drew Guckenberger, University ofWaterloo

Reno Harboe-Sorensen, ESAPeter Hazucha, University of

LinköpingDave Heidel, IBM ResearchBill Heidergott, MotorolaBryan Henson, ICIDaniel Heynderickx, IASB-BIRAAndrew Holmes-Siedle, Brunel

UniversityGordon Hopkinson, SIRAJim Howard, NASA-GoddardBill Jenkins, Naval Research LaboratoryKay Jobe, HughesRobert Johnson, RaytheonAllan Johnston, Jet Propulsion

LaboratoryShashi Karna, Air Force Research

LaboratoryRichard Katz, NASA-GoddardAndy Kent, Matra Marconi SpaceShyam Khanna, Defence Research

Establishment OttawaDavid Krawzsenek, Maxwell

Technologies/SEIKen LaBel, NASA-GoddardRon Lacoe, The Aerospace CorporationPat Lenahan, Penn State UniversityMike Liu, HoneywellMark Looper, The Aerospace

CorporationGary Lum, Lockheed MartinJean-Luc Leray, CEAMike Maher, National SemiconductorRenaud Mangeret, Matra MarconiRonan Marec, AlcatelCheryl Marshall, NASA-GoddardSuraj Mathew, Micron TechnologyRichard Maurer, Johns Hopkins

Applied Physics LaboratoryDon Mayer, The Aerospace CorporationPat McDonald, ICIDale McMorrow, Naval Research

LaboratoryPeter McNulty, Clemson UniversityScott Messenger, SFA/NRLKyle Miller, Ball AerospaceSteven Moss, The Aerospace CorporationBernie Mrstik, Naval Research

LaboratoryOlivier Musseau, CEAGuofu Niu, Auburn UniversityEugene Normand, BoeingMike Oldfield, University of SurreyTim Oldham, Army Research

Laboratory

Radiation Effects Steering GroupRadiation Effects Steering Group

61

ChairmanKlaus G. KerrisArmy Research LaboratoryAMSRL-SE-DP2800 Powder Mill RoadAdelphi, MD [email protected]

Senior Member-at-LargeNick W. van VonnoIntersil CorporationP. O. Box 883Mail Stop 58-103Melbourne, FL [email protected]

Past ChairmanPeter S. WinokurSandia National LaboratoriesMS 1083/Department 1727P.O. Box 5800Albuquerque, NM [email protected]

RADECS LiaisonPhilippe M. CalvelAlcatel Espace26 avenue J.-F. ChampollionB.P. 118731037 Toulouse, [email protected]

Vice-Chairman, 2000 ConferenceRonald L. PeaseRLP Research, Inc.1718 Quail Run Ct., NEAlbuquerque, NM [email protected]

AdCom Member (Term exp. Dec. '01)Mark A. HopkinsThe Aerospace CorporationP.O. Box 9045Albuquerque, NM [email protected]

Executive Vice-ChairmanDale G. PlatteterNaval Surface Warfare CenterCode 605, Building 2088300 Highway 361Crane, IN [email protected]

Member-at-LargeJames D. KinnisonJHU/Applied Physics LabMS-23-2-7011100 J. Hopkins RoadLaurel, MD [email protected]

Vice-Chairman, PublicationsDennis B. BrownNRO/AS & T14675 Lee RoadChantilly, VA [email protected]

Special Publications AssignmentPaul V. DressendorferSandia National LaboratoriesMS 1074/Department 1726P.O. Box 5800Albuquerque, NM [email protected]

Vice-Chairman, 2001 ConferenceMarty ShaneyfeltSandia National LaboratoriesMS 1083, Department 1727P.O. Box 5800Albuquerque, NM [email protected]

AdCom Member (Term exp. Dec. '02)Peter S. WinokurSandia National LaboratoriesMS 1083/Department 1727P.O. Box 5800Albuquerque, NM [email protected]

SecretaryAllan H. JohnstonJet Propulsion Laboratory4800 Oak Grove DriveMS 303-220Pasadena, CA [email protected]

Junior Member-at-LargeFred SextonSandia National LaboratoriesMS 0527/Department 1727P.O. Box 5800Albuquerque, NM [email protected]

Vice-Chairman, PublicityTeresa FarrisUTMC Microelectronic Systems4350 Centennial Blvd.Colorado Springs, CO [email protected]

Vice-Chairman, 1999 ConferenceRonald D. SchrimpfVanderbilt UniversityElectrical and ComputerEngineeringP.O. Box 1608, Sta. BNashville, TN 37235615- [email protected]

Vice-Chairman, 2002 ConferenceKenneth K. HuntAir Force Research Laboratory3550 Aberdeen Ave. SEKirtland AFB, NM [email protected]

AdCom Member (Term exp. Dec. '03)Kenneth GallowayVanderbilt UniversitySchool of EngineeringP.O. Box 1826, Stn BNashville, TN [email protected]

63

ANNOUNCEMENT and FIRST CALL FOR PAPERSANNOUNCEMENT and FIRST CALL FOR PAPERS

PAPER SUMMARY DEADLINE: FEBRUARY 2, 2001

The 2001 IEEE International Nuclear and Space Radiation Effects Conference will beheld July 16-20 in Vancouver, B.C., Canada at the Westin Bayshore Hotel. The Con-ference features a technical program consisting of eight to ten sessions of contributedpapers describing the latest observations in radiation effects, an up–to–date ShortCourse on radiation effects offered on July 16, a Radiation Effects Data Workshop,and an Industrial Exhibit. The technical program includes oral and poster sessions.

Papers describing nuclear and space radiation effects on electronic and photonicmaterials, devices, circuits, sensors, and systems, as well as semiconductor process-ing technology and techniques for producing radiation-tolerant (hardened) devicesand integrated circuits, will be presented at this meeting of engineers, scientists, andmanagers. International participation is strongly encouraged.

We are soliciting papers describing significant new findings in the following or related areas:

Basic Mechanisms of Radiation Effects in Electronic Materials and Devices■ Ionizing Radiation Effects■ Materials and Device Effects■ Displacement Damage■ Single-event Charge Collection Phenomena and Mechanisms■ Radiation Transport, Energy Deposition and Dosimetry■ Processing-induced Radiation Effects

Radiation Effects on Electronic and Photonic Devices and Circuits■ MOS, Bipolar and III-V Technologies■ SOI and SOS Technologies■ Optical and Optoelectronic Sensors and Transmitters■ Methods for Hardened Design and Manufacturing■ Modeling of Devices, Circuits and Systems■ Particle Detectors and Associated Electronics for High-energy Accelerators■ Cryogenic Temperature Effects■ Novel Device Structures, such as MEMs

Space and Terrestrial Radiation Effects■ Single-event Phenomena in Devices and Circuits■ Characterization and Modeling of Space and Terrestrial Radiation

Environments■ Spacecraft Charging

Hardness Assurance Technology and Testing■ Testing Techniques, Guidelines and Hardness Assurance Methodology■ Radiation Exposure Facilities

New Developments of Interest to the Radiation Effects Community

www.nsrec.com

Sponsored ByIEEE/NPSS Radiation Effects Committee

Supported ByDefense Threat Reduction AgencySandia National LaboratoriesAir Force Research LaboratoryJet Propulsion LaboratoryNASA Goddard

Conference Committee

General ChairMarty R. ShaneyfeltSandia National Laboratories505-844-6137

Technical ProgramJanet L. BarthNASA/Goddard Space Flight Center301-286-8046

Local ArrangementsJoseph M. BenedettoUTMC Microelectronic Systems719-594-8415

Short CoursePaul E. DoddSandia National Laboratories505-844-1447

PublicityTeresa FarrisUTMC Microelectronic Systems719-594-8035

FinanceMark A. HopkinsThe Aerospace Corporation505-872-6200

AwardsTimothy R. OldhamUS Army Research Laboratory301-394-5429

Industrial ExhibitsDarrell CraigIntersil Corporation321-724-7008

Guest EditorMichael A. XapsosNaval Research Lab202-767-5467

2001 IEEE NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCEShort Course and Radiation Effects Data Workshop

July 16 - 20, 2001Westin Bayshore Hotel

Vancouver, British Columbia, Canada

64

PROCEDURE FOR SUBMITTING SUMMARIESAuthors must conform to the following requirements:1. Mail two paper copies or electronically submit one Adobe Acrobat PDF file

of (a) an abstract no longer than 35 words attached to (b) an informativesummary (appropriate for 12–minute oral or a poster presentation). Thesummary must furnish sufficient details to permit a meaningful review andclearly indicate (a) the purpose of your work, (b) significant results, and(c) how your work advances the state of the art.

2. The summary should be no less than two nor more than four pages inlength, including figures and tables. All figures and tables must be large enoughto be clearly read. Note that this is more than an abstract, but do not exceedfour pages.

3. Type your summary using 11 point or greater type on either U. S. Standard,8.5 in. (21.6 cm) x 11 in. (27.9 cm), or A4, 21 cm x 29.7 cm, white paper, with1 in. (2.5 cm) margins on all four sides. Please include title, names and com-pany affiliations of the authors, and company address (city and state).Underline the name of the author presenting the paper.

4. Obtain all corporate, sponsor, and government approvals and releases neces-sary for presenting your paper at an open–attendance international meeting.

5. Include a cover letter giving (a) the names, complete addresses, telephone and FAX numbers, and e-mail addresses of allauthors, and (b) the session that you prefer for presentation (if you have a preference). Authors are also encouraged to statetheir preference for an oral or poster presentation in the conference, or a poster at the data workshop. However, the final categoryof all papers will be determined by the Technical Program Committee, which is responsible for selecting final papers frominitial submissions.

Papers accepted for oral or poster presentation at the technical program will be eligible for publication in the Conference issueof the IEEE Transactions on Nuclear Science (December 2001), based on a separate submission of a complete paper, and subjectto an independent review after the Conference. Further information will be sent to prospective authors upon acceptance oftheir NSREC summary. It is not necessary to be an IEEE member to present a paper or attend the NSREC. However, weencourage IEEE membership of all NSREC participants.

RADIATION EFFECTS DATA WORKSHOPThe Radiation Effects Data Workshop is a forum for papers on radiation effects data on electronic devices and systems.Workshop papers are intended to provide radiation response data to scientists and engineers who use electronic devices in aradiation environment, and for designers of radiation–hardened systems. Papers describing new simulation or radiation facil-ities are also welcomed. The procedure for submitting a summary to the Workshop is identical to the procedure for submit-ting NSREC summaries. Radiation Effects Data Workshop papers will be published in a Workshop Record and are not candi-dates for publication in the Conference issue of the IEEE Transactions on Nuclear Science.

VANCOUVERVancouver is the largest port and commercial center on Canada's pacificcoast and is a major center for tourism. Vancouver is situated amidst amagnificent natural harbor and the scenery is dominated by the NorthShore Mountains. Vancouver offers many local recreational and culturalattractions including: Gastown, the oldest part of Vancouver whereVictorian street lamps line the red cobblestone streets, Granville Island,which is an eclectic mixture of shopping, theatre and restaurants sur-rounded by False Creek, the third largest China Town in North America,and Stanley Park, a thousand acres of parklands and forest.

Vancouver enjoys mild temperatures year round. The average daytimehigh in July is in the mid 70's F with an average 24 days without precipitation. The newly remodeled Vancouver InternationalAirport serves as Canada's gateway for international visitors and is served by most major airlines. Conference attendees alsohave the option of flying into Seattle, WA and enjoying the scenic 2 1/2-hour drive into Vancouver.

The conference will be held at the award-winning Westin Bayshore Hotel that has 517 rooms and over 48,000 square feet ofmeeting and convention space. The hotel offers expansive views of the mountains, harbor, and city skyline. The hotel is locat-ed only a few steps from the seawall, that serves as a scenic walkway to Stanley Park and the Vancouver Convention andExhibition Center. For more information on everything that Vancouver has to offer please visit the Greater VancouverConvention and Visitors Bureau's web site at www.tourism-vancouver.org.

Paper or PDF Summaries must bereceived by February 2, 2001

Address paper summaries (2 copies) to:

Janet BarthIEEE/NSREC Technical Chairman

NASA/Goddard Space Flight CenterCode 562

Building 11, Room E208CGreenbelt, MD 20771

301-286-8046

Electronic submissions to:

[email protected]

will be accepted as Adobe Acrobat PDF attachments only

Photograph courtesy of Tourism Vancouver

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www.nsrec .com

RENO / TAHOEAIRPORT

Scale in Miles

0 0.5 1

Truckee River

W. 4th St.

E. 4th St.

W. 5th St.

N. Sierra St.

N. V

irginia St.N

. Center St.

West St.

US 395

Interstate 80

N. Sierra St.

N. V

irginia St.

W. 6th St.

W. 3rd St.

Silver Legacy Hotel

Casino and Conference Rooms

City Center Pavilion

Airport shuttle: North end of terminal

Driving directions: North on US 395 Exit Interstate 80 - west Exit Downtown Reno/ North Virginia St. Merge onto 8th St. Left at third set of traffic lights onto North Sierra Past 5th St., enter parking garage on right

I-80

Exit 68

Exit 13Downtown Reno/North Virginia St

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37th annual international nuclear and space radiation...

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