4ac14 int nissan

8/14/2019 4ac14 Int Nissan

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4AC14

Silicon NPN Triple Diffused

Application

Low frequency power amplifier

Outline

SP-10

1, 10 Emitter2, 4, 6, 8 Base3, 5, 7, 9 Collector

1

10

2

1

6

4

8

3

7

5

9

10

ID ID

ID ID


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4AC14

Absolute Maximum Ratings (for each device, Ta = 25C)

Item Symbol Ratings Unit

Collector to base voltage VCBO 150 V

Collector to emitter voltage VCEO 150 V

Emitter to base voltage VEBO 7 V

Collector current IC 5 A

Collector peak current IC(peak) 10 A

Diode current ID 5 A

Collector power dissipation PC*1 4 W

PC*1(TC= 25C) 28

Junction temperature Tj 150 C

Storage temperature Tstg 55 to +150 CNote: 1. 4 devices operation.

Electrical Characteristics (for each device, Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown

voltage

V(BR)CBO 150 V IC= 0.1 mA, IE= 0

Collector to emitter sustainvoltage VCEO(SUS) 150 V IC= 0.2 A, L = 20 mHz, RBE=

Emitter to base breakdown

voltage

V(BR)EBO 7 V IE= 50 mA, IC= 0

Collector cutoff current ICBO 10 A VCB= 120 V, IE= 0

ICEO 10 VCE= 120 V, RBE=

DC current transfer ratio hFE 1000 20000 VCE= 3 V, IC= 3 A*1

Collector to emitter saturation

voltage

VCE(sat) 1.5 V IC= 3 A, IB= 6 mA*1

Base to emitter saturationvoltage

VBE(sat) 2.0 V IC= 3 A, IB= 6 mA*1

C to E diode forward current VD 3.5 V ID= 5 A

Note: 1. Pulse test.


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4AC14

0

CollectorpowerdissipationPc(W)

Maximum Collector Dissipation Curve

50 100 150

2

6

4

4 device operation

3 device operation

2 device operation

1 device operation

Ambient temperature Ta (C)

Note: Collector power dissipation of each devicesis identical.

0

Case temperature TC (C)

CollectorpowerdissipationPc

(W)

Maximum Collector Dissipation Curve

50 100 150

10

30

20

4 device operation

3 device operation

2 device operation

1 device operation

Collector to emitter voltage VCE (V)

Collectorcurren

tIC(A)

0.01

0.1

1.0

100

10

0.3 1.0 3.0 10 30 100 300

Area of Safe Operation

iC(peak)

IC(max)1ms

DCOperation

(TC=25

C)

PW

=10ms

Ta = 25C1 shot pulse

Collector to emitter voltage VCE (V)

CollectorcurrentIC(A)

0

Typical Output Characteristics

1 2 3 4 5

1

2

3

4

5

TC= 25CIB= 0

1 mA

1.5

2

2.5

3.5

4.5

3

4


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4AC14

10

100

1,000

10,000

Collector current IC (A)

DCcurrenttransferratiohFE

0.1 0.3

VCE= 3 V

1.0 3.0 10

DC Current Transfer Ratiovs. Collector Current

Ta=75C

25

C25C

0.1

0.3

1.0

3.0

10


0.1 0.3 1.0 3.0 10Collectortoemittersaturationvolta

ge

VCE

(sat)

(V)

Collector to Emitter Saturation Voltagevs. Collector Current

lC= 500 lB

Ta = 25C

25C

75C


Basetoemittersaturationvoltage

VBE

(sat)

(V)

0.1

0.3

1.0

3.0

10

0.1 0.3 1.0 3.0 10

Base to Emitter Saturation Voltagevs. Collector Current

25C75C

lC= 500 lB

Ta = 25C

Base to emitter voltage VBE (V)

Collectorcu

rrentIC(A)

0

Typical Transfer Characteristics

VCE= 3 V

25C

75C

Ta = 25C

0.4 0.8 1.2 1.6 2.0

1

2

3

4

5


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4AC14

0.02

0.1

10

1.0

Time t

Thermalresistance

j-c

(C/W)

0.01 0.1 1.0 10 (s)

0.01 0.1 1.0 10 (ms)

Transient Thermal Resistance

TC= 25C

10mst

o10s

10s

to10

ms

Emitter to collector diode forward voltage VECF (V)

DiodecurrentID(A)

0

Typical Characteristics ofEmitter to Collector Diode

TC= 25C

0.4 0.8 1.2 1.6 2.0

1

2

3

4

5

Unit: mm

26.5 0.3

1.82 2.54 1.4 1.2 0.55

1.5 0.2

0.55 0.1

4.0 0.2

10.0

0.3

10.5

0.52

.5

1 2 3 4 5 6 7 8 9 10

1 10

Pin No.

Electrode

Note: B:

C:

E:

Base

Collector

Emitter

1

E

2

B

3

C

4

B

5

C

6

B

7

C

8

B

9

C

10

E


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Hitachi CodeJEDECEIAJWeight (reference value)

SP-102.9 g

Un

26.5 0.3

1.82 2.54 1.4 0.55

1.5 0.2

0.55 0.1

4.0 0.2

10.0

0.3

10.5

0.52

.5

1 2 3 4 5 6 7 8 9 10

+0.10.06


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Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third partys rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachis sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause ris

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlfor maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withou

written approval from Hitachi.

7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533

URL NorthAmerica : http:semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htmAsia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htmAsia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htmJapan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167,Tun-Hwa North Road, Taipei (105)Tel: (2) 2718-3666F 886 (2) 2718 8180

Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance CentreHarbour City, Canton Road, Tsim Sha TKowloon, Hong KongTel: (2) 735 9218Fax: (2) 730 0281Telex: 40815 HITEC HXHitachi Europe Ltd.

Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenhead

Hitachi Europe GmbHElectronic components GroupDornacher Strae 3D-85622 Feldkirchen, MunichGermanyTel: (89) 9 9180-0Fax: (89) 9 29 30 00

Hitachi Semiconductor(America) Inc.179 East Tasman Drive,San Jose,CA 95134Tel: (408) 433-1990Fax: (408) 433-0223

For further information write to:


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