4v drive nch + pch mosfet4v drive nch + pch mosfet sh8m14 structure dimensions (unit : mm) silicon...
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Data Sheet
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4V Drive Nch + Pch MOSFET SH8M14
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
Application
Switching
Packaging specifications Inner circuitPackage Taping
Code TB
Basic ordering unit (pieces) 2500SH8M14
Absolute maximum ratings (Ta = 25C)
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage VDSS 30 30 V
Gate-source voltage VGSS 20 20 V
Continuous ID 9 7 A
Pulsed IDP 36 28 A
Continuous Is 1.6 1.6 A
Pulsed Isp 36 28 A
W / TOTAL
W / ELEMENT
Channel temperature Tch CRange of storage temperature Tstg C*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Power dissipation PD
Symbol
Type
Source current(Body Diode)
Drain current
Parameter
2.0
55 to 150
UnitLimits
1.4
150
*1
*2
*1
SOP8
(1)
(8) (5)
(4)
(1) Tr1 Source(2) Tr1 Gate(3) Tr2 Source(4) Tr2 Gate(5) Tr2 Drain(6) Tr2 Drain(7) Tr1 Drain(8) Tr1 Drain
∗1 ESD PROTECTION DIODE∗2 BODY DIODE
∗2
∗1
∗2
∗1
(8) (7)
(1) (2)
(6) (5)
(3) (4)
1/10 2011.06 - Rev.A
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Data SheetSH8M14
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS - - 10 A VGS=±20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - - 1 A VDS=30V, VGS=0V
Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA
- 15 21 ID=9A, VGS=10V
- 18 25 ID=9A, VGS=4.5V
20 28 ID=9A, VGS=4V
Forward transfer admittance l Yfs l 5.0 - - S VDS=10V, ID=9A
Input capacitance Ciss - 630 - pF VDS=10V
Output capacitance Coss - 230 - pF VGS=0V
Reverse transfer capacitance Crss - 110 - pF f=1MHz
Turn-on delay time td(on) - 10 - ns ID=4.5A, VDD 15V
Rise time tr - 33 - ns VGS=10V
Turn-off delay time td(off) - 42 - ns RL=3.3
Fall time tf - 10 - ns RG=10
Total gate charge Qg - 8.5 - nC ID=9A, VDD 15V
Gate-source charge Qgs - 2.3 - nC VGS=5V
Gate-drain charge Qgd - 4.0 - nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage VSD - - 1.2 V Is=9A, VGS=0V
*Pulsed
Parameter Conditions
ConditionsParameter
Static drain-source on-stateresistance
RDS (on) m
*
*
*
*
*
*
*
*
*
*
2/10 2011.06 - Rev.A
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Data SheetSH8M14
Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS - - 10 A VGS=20V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - 1 A VDS=30V, VGS=0V
Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA
- 21.5 29.0 ID=7A, VGS=10V
- 29.0 39.0 ID=3.5A, VGS=4.5V
- 31.0 40.8 ID=3.5A, VGS=4.0V
Forward transfer admittance l Yfs l 6.0 - - S VDS=10V, ID=7A
Input capacitance Ciss - 1200 - pF VDS=10V
Output capacitance Coss - 170 - pF VGS=0V
Reverse transfer capacitance Crss - 170 - pF f=1MHz
Turn-on delay time td(on) - 12 - ns ID=3.5A, VDD 15V
Rise time tr - 40 - ns VGS=10V
Turn-off delay time td(off) - 80 - ns RL=4.27
Fall time tf - 65 - ns RG=10
Total gate charge Qg - 18 - nC ID=7A, VDD 15V
Gate-source charge Qgs - 3.5 - nC VGS=5V
Gate-drain charge Qgd - 6.5 - nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage VSD - - 1.2 V Is=7A, VGS=0V
*Pulsed
Parameter Conditions
Conditions
mStatic drain-source on-stateresistance
RDS (on)
Parameter
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
3/10 2011.06 - Rev.A
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Data SheetSH8M14
Electrical characteristic curves (Ta=25C)〈Tr.1(Nch)〉
0
1
2
3
4
5
6
7
8
9
0 0.2 0.4 0.6 0.8 1
Dra
in C
urre
nt :
I D [A
]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=2.5V
VGS=10.0V
VGS=4.0V VGS=4.5V
VGS=2.8V VGS=3.0V
Ta=25°C Pulsed
0
1
2
3
4
5
6
7
8
9
0 2 4 6 8 10
Dra
in C
urre
nt :
I D [A
]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
Ta=25°C Pulsed
1
10
100
1000
0.01 0.1 1 10 100
Stat
ic D
rain
-Sou
rce
On-
Stat
e R
esis
tanc
e R
DS
(on)
[mΩ
]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V VGS=4.5V VGS=10V
Ta=25°C Pulsed
1
10
100
1000
0.01 0.1 1 10 100
Stat
ic D
rain
-Sou
rce
On-
Stat
e R
esis
tanc
e R
DS
(on)
[mΩ
]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V pulsed Ta=125°C
Ta=75°C
Ta=25°C Ta=-25°C
1
10
100
1000
0.01 0.1 1 10 100
Stat
ic D
rain
-Sou
rce
On-
Stat
e R
esis
tanc
e R
DS
(on)
[mΩ
]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.5V pulsed
Ta=125°C
Ta=75°C
Ta=25°C Ta=-25°C
1
10
100
1000
0.01 0.1 1 10 100
Stat
ic D
rain
-Sou
rce
On-
Stat
e R
esis
tanc
e R
DS
(on)
[mΩ
]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4V pulsed Ta=125°C
Ta=75°C
Ta=25°C Ta=-25°C
4/10 2011.06 - Rev.A
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Data SheetSH8M14
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10 100
Forw
ard
Tran
sfer
Adm
ittan
ce
Y fs [
S]
Drain Current : ID [A]
Fig.7 Forward Transfer Admittance vs. Drain Current
VDS=10V pulsed
Ta=125°C
Ta=75°C
Ta=25°C Ta=-25°C
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Dra
in C
urrn
t : I
D [A
]
Gate-Source Voltage : VGS [V]
Fig.8 Typical Transfer Characteristics
VDS=10V pulsed
Ta=125°C
Ta=75°C
Ta=25°C Ta=-25°C
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0
Sour
ce C
urre
nt :
Is [A
]
Source-Drain Voltage : VSD [V]
Fig.9 Source Current vs. Source-Drain Voltage
VGS=0V pulsed
Ta=125°C
Ta=75°C
Ta=25°C Ta=-25°C
0
10
20
30
40
50
0 2 4 6 8 10
Stat
ic D
rain
-Sou
rce
On-
Stat
e R
esis
tanc
e R
DS
(on)
[mΩ
]
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
ID=9.0A
ID=4.5A
Ta=25°C Pulsed
1
10
100
1000
10000
0.01 0.1 1 10
Switc
hing
Tim
e : t
[ns]
Drain Current : ID [A]
Fig.11 Switching Characteristics
td(on) tr
td(off)
tf
VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed
0
2
4
6
8
10
0 5 10 15
Gat
e-So
urce
Vol
tage
: V
GS [V
]
Total Gate Charge : Qg [nC]
Fig.12 Dynamic Input Characteristics
Ta=25°C VDD=15V ID=9A Pulsed
5/10 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data SheetSH8M14
10
100
1000
10000
0.01 0.1 1 10 100
Cap
acita
nce
: C [p
F]
Drain-Source Voltage : VDS [V]
FIg.13 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C f=1MHz VGS=0V
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
Dra
in
Cur
rent
: I
D
[ A ]
Drain-Source Voltage : VDS [ V ]
Fig.14 Maximum Safe Operating Area
Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm)
Operation in this area is limited by RDS(on) (VGS = 10V)
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Nor
mal
ized
Tra
nsie
nt T
herm
al R
esis
tanc
e :
r(t)
Pulse width : Pw (s)
FIg.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Ta=25°C Single Pulse : 1Unit
Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a)
6/10 2011.06 - Rev.A
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Data SheetSH8M14
〈Tr.2(Pch)〉
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1
VGS= -2.5V
VGS= -10V VGS= -4.5V VGS= -4.0V
VGS= -3.0V Ta=25°C Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DR
AIN
CU
RR
ENT
: -I D
[A]
DRAIN-SOURCE VOLTAGE : -VDS[V]
0
1
2
3
4
5
6
7
0 2 4 6 8 10
VGS= -2.5V VGS= -3.0V
VGS= -10V VGS= -4.5V VGS= -4.0V
Ta=25°C Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : -VDS[V]
DR
AIN
CU
RR
ENT
: -I D
[A]
0.001
0.01
0.1
1
10
100
0 1 2 3
VDS= -10V Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Fig.3 Typical Transfer Characteristics
DR
AIN
CU
RR
ENT
: -I D
[A]
GATE-SOURCE VOLTAGE : -VGS[V]
1
10
100
1000
0.1 1 10
VGS= -4.0V VGS= -4.5V VGS= -10V
Ta=25°C Pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : -ID[A]
STAT
IC D
RAI
N-S
OU
RC
E O
N-S
TATE
R
ESIS
TAN
CE
: RD
S( o
n)[mΩ
]
1
10
100
1000
0.1 1 10
VGS= -10V Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : -ID[A]
STAT
IC D
RAI
N-S
OU
RC
E O
N-S
TATE
R
ESIS
TAN
CE
: RD
S( o
n)[mΩ
]
1
10
100
1000
0.1 1 10
VGS= -4.5V Pulsed Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : -ID[A]
STAT
IC D
RAI
N-S
OU
RC
E O
N-S
TATE
R
ESIS
TAN
CE
: RD
S( o
n)[mΩ
]
7/10 2011.06 - Rev.A
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Data SheetSH8M14
1
10
100
1000
0.1 1 10
VGS= -4.0V Pulsed Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : -ID[A]
STAT
IC D
RAI
N-S
OU
RC
E O
N-S
TATE
R
ESIS
TAN
CE
: RD
S( o
n)[mΩ
]
0.1
1
10
100
0.01 0.1 1 10
VDS= -10V Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Fig.8 Forward Transfer Admittance vs. Drain Current
FOR
WAR
D T
RAN
SFER
AD
MIT
TAN
CE
: |Yf
s| [S
]
DRAIN-CURRENT : -ID[A]
0.01
0.1
1
10
100
0 0.5 1 1.5
VGS=0V Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
SOU
RC
E C
UR
REN
T : -
I s [A
]
SOURCE-DRAIN VOLTAGE : -VSD [V]
0
20
40
60
80
100
0 5 10 15
ID= -7.0A
ID= -3.5A
Ta=25°C Pulsed
Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage
STAT
IC D
RAI
N-S
OU
RC
E O
N-S
TATE
R
ESIS
TAN
CE
: RD
S( O
N)[m
Ω]
GATE-SOURCE VOLTAGE : -VGS[V]
1
10
100
1000
10000
0.01 0.1 1 10
tf
td(on)
td(off)
Ta=25°C VDD= -15V VGS= -10V RG=10W Pulsed
tr
Fig.11 Switching Characteristics
SWIT
CH
ING
TIM
E : t
[ns]
DRAIN-CURRENT : -ID[A]
0
2
4
6
8
10
0 10 20 30
Ta=25°C VDD= -15V ID= -7.0A RG=10W Pulsed
Fig.12 Dynamic Input Characteristics
GAT
E-SO
UR
CE
VOLT
AGE
: -V G
S [V
]
TOTAL GATE CHARGE : Qg [nC]
8/10 2011.06 - Rev.A
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Data SheetSH8M14
10
100
1000
10000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25°C f=1MHz VGS=0V
Fig.13 Typical Capacitance vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : -VDS[V]
CA
PAC
ITAN
CE
: C [p
F]
0.01
0.1
1
10
100
1000
0.1 1 10 100
PW = 10ms
DC operation
Operation in this area is limited by RDS(ON) (VGS= -10V)
PW=100us
PW=1ms
Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm)
Fig.14 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE : -VDS[V]
DR
AIN
CU
RR
ENT
: -I D
(A)
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Ta=25°C Single Pulse : 1Unit
Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
PULSE WIDTH : Pw(s)
NO
RM
ARIZ
ED T
RAN
SIEN
T TH
ERM
AL
R
ESIS
TAN
CE
: r (t
)
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Data SheetSH8M14
Measurement circuits
<Tr1(Nch)>
<Tr2(Pch)>
NoticeThis product might cause chip aging and breakdown under the large electrified environment. Please consider to designESD protection circuit.
VGS
RG
VDS
D.U.T.
ID
RL
VDD
90%
90% 90%
10% 10%
50%10%50%
VGS
Pulse width
VDS
ton toff
trtd(on) tftd(off)
VG
VGS
Charge
Qg
Qgs Qgd
VGS
IG(Const.)
VDS
D.U.T.
ID
RL
VDD
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
VGS
RG
VDS
D.U.T.
ID
RL
VDD
90%
90% 90%
10% 10%
10%50% 50%
Pulse Width
VGS
VDS
ton toff
trtd(on) tftd(off)
VG
VGS
Charge
Qg
Qgs Qgd
VGS
IG(Const.)
VDS
D.U.T.
ID
RL
VDD
Fig.3-1 Switching Time Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform
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