5m0380r

20
©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev.1.0.5 Features Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Applications SMPS for VCR, SVR, STB, DVD & DVCD SMPS for Printer, Facsimile & Scanner Adaptor for Camcorder Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter Internal Block Diagram #3 VCC 32V 5μA 9V 2.5R 1R 1mA 0.1V + - OVER VOLTAGE S/D + - 7.5V 27V Thermal S/D S R Q Power on reset + - L.E.B S R Q OSC 5V Vref Internal bias Good logic SFET #2 DRAIN #1 GND #4 FB (*#3 VCC) (*#4 FB) (*#1.6.7.8 DRAIN) (*#2 GND) *Asterisk - KA5M0365RN, KA5L0365RN KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) TO-220F-4L 1. GND 2. Drain 3. VCC 4. FB 1 8-DIP 1.6.7.8 Drain 2. GND 3. VCC 4. FB 5. NC

Upload: genaro-santiago-martinez

Post on 19-Jan-2016

10 views

Category:

Documents


0 download

TRANSCRIPT

©2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.5

Features

• Precision Fixed Operating Frequency (100/67/50kHz)

• Low Start-up Current(Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Current Protection

• Over Voltage Protection (Min. 25V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Applications

• SMPS for VCR, SVR, STB, DVD & DVCD

• SMPS for Printer, Facsimile & Scanner

• Adaptor for Camcorder

Description

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consists of a

high voltage power SenseFET and a current mode PWM IC.

Included PWM controller integrates the fixed frequency

oscillator, the under voltage lock-out, the leading edge

blanking, the optimized gate turn-on/turn-off driver, the

thermal shutdown protection, the over voltage protection,

and the temperature compensated precision current sources

for the loop compensation and the fault protection circuitry.

Compared to a discrete MOSFET and a PWM controller or

an RCCsolution, a Fairchild Power Switch(FPS) can reduce

the total component count, design size and weight and at the

same time increase efficiency, productivity, and system

reliability. It has a basic platform well suited for the cost

effective design in either a flyback converter or a forward

converter

Internal Block Diagram

#3 VCC

32V

5µA

9V

2.5R1R

1mA

0.1V+

OVER VOLTAGE S/D

+

7.5V

27V

Thermal S/D

S

RQ

Power on reset

+

−L.E.B

S

RQ

OSC

5VVref

Internalbias

Goodlogic

SFET

#2 DRAIN

#1 GND

#4 FB

(*#3 VCC)

(*#4 FB)

(*#1.6.7.8 DRAIN)

(*#2 GND)

*Asterisk - KA5M0365RN, KA5L0365RN

KA5x03xx-SERIESKA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,

KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R

Fairchild Power Switch(FPS)

TO-220F-4L

1. GND 2. Drain 3. VCC 4. FB

1

8-DIP

1.6.7.8 Drain2. GND3. VCC4. FB 5. NC

KA5X03XX-SERIES

2

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

Characteristic Symbol Value Unit

KA5H0365R, KA5M0365R, KA5L0365R

Maximum Drain Voltage VD,MAX 650 V

Drain-Gate Voltage (RGS=1MΩ) VDGR 650 V

Gate-Source (GND) Voltage VGS ±30 V

Drain Current Pulsed (1) IDM 12.0 ADC

Continuous Drain Current (TC=25°C) ID 3.0 ADC

Continuous Drain Current (TC=100°C) ID 2.4 ADC

Single Pulsed Avalanche Energy (2) EAS 358 mJ

Maximum Supply Voltage VCC,MAX 30 V

Analog Input Voltage Range VFB -0.3 to VSD V

Total Power DissipationPD 75 W

Derating 0.6 W/°C

Operating Junction Temperature. TJ +160 °C

Operating Ambient Temperature. TA -25 to +85 °C

Storage Temperature Range. TSTG -55 to +150 °C

KA5H0380R, KA5M0380R, KA5L0380R

Maximum Drain Voltage VD,MAX 800 V

Drain-Gate Voltage (RGS=1MΩ) VDGR 800 V

Gate-Source (GND) Voltage VGS ±30 V

Drain Current Pulsed (1) IDM 12.0 ADC

Continuous Drain Current (TC=25°C) ID 3.0 ADC

Continuous Drain Current (TC=100°C) ID 2.1 ADC

Single Pulsed Avalanche Energy (2) EAS 95 mJ

Maximum Supply Voltage VCC,MAX 30 V

Analog Input Voltage Range VFB -0.3 to VSD V

Total Power DissipationPD 75 W

Derating 0.6 W/°C

Operating Junction Temperature. TJ +160 °C

Operating Ambient Temperature. TA -25 to +85 °C

Storage Temperature Range. TSTG -55 to +150 °C

KA5X03XX-SERIES

3

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

Characteristic Symbol Value Unit

KA5M0365RN, KA5L0365RN

Maximum Drain Voltage VD,MAX 650 V

Drain-Gate Voltage (RGS=1MΩ) VDGR 650 V

Gate-Source (GND) Voltage VGS ±30 V

Drain Current Pulsed (1) IDM 12.0 ADC

Continuous Drain Current (Ta=25°C) ID 0.42 ADC

Continuous Drain Current (Ta=100°C) ID 0.28 ADC

Single Pulsed Avalanche Energy (2) EAS 127 mJ

Maximum Supply Voltage VCC,MAX 30 V

Analog Input Voltage Range VFB -0.3 to VSD V

Total Power DissipationPD 1.56 W

Derating 0.0125 W/°C

Operating Junction Temperature. TJ +160 °C

Operating Ambient Temperature. TA -25 to +85 °C

Storage Temperature Range. TSTG -55 to +150 °C

KA5X03XX-SERIES

4

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Note:

Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

Parameter Symbol Condition Min. Typ. Max. Unit

KA5H0365R, KA5M0365R, KA5L0365R

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V

Zero Gate Voltage Drain Current IDSS

VDS=Max. Rating, VGS=0V - - 50 µA

VDS=0.8Max. Rating,

VGS=0V, TC=125°C- - 200 µA

Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω

Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - S

Input Capacitance CissVGS=0V, VDS=25V,

f=1MHz

- 720 -

pFOutput Capacitance Coss - 40 -

Reverse Transfer Capacitance Crss - 40 -

Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A

(MOSFET switching

time is essentially

independent of

operating temperature)

- 150 -

nSRise Time tr - 100 -

Turn Off Delay Time td(off) - 150 -

Fall Time tf - 42 -

Total Gate Charge

(Gate-Source+Gate-Drain)Qg

VGS=10V, ID=1.0A,

VDS=0.5BVDSS (MOSFET

switching time is essentially

independent of

operating temperature)

- - 34

nCGate-Source Charge Qgs - 7.3 -

Gate-Drain (Miller) Charge Qgd - 13.3 -

KA5H0380R, KA5M0380R, KA5L0380R

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 800 - - V

Zero Gate Voltage Drain Current IDSS

VDS=Max. Rating, VGS=0V - - 250 µA

VDS=0.8Max. Rating,

VGS=0V, TC=125°C- - 1000 µA

Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω

Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S

Input Capacitance CissVGS=0V, VDS=25V,

f=1MHz

- 779 -

pFOutput Capacitance Coss - 75.6 -

Reverse Transfer Capacitance Crss - 24.9 -

Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A

(MOSFET switching

time is essentially

independent of

operating temperature)

- 40 -

nSRise Time tr - 95 -

Turn Off Delay Time td(off) - 150 -

Fall Time tf - 60 -

Total Gate Charge

(Gate-Source+Gate-Drain)Qg

VGS=10V, ID=1.0A,

VDS=0.5BVDSS (MOSFET

switching time is

essentially independent of

operating temperature)

- - 34

nCGate-Source Charge Qgs - 7.2 -

Gate-Drain (Miller) Charge Qgd - 12.1 -

S1

R----=

KA5X03XX-SERIES

5

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Note:

Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

Parameter Symbol Condition Min. Typ. Max. Unit

KA5M0365RN, KA5L0365RN

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V

Zero Gate Voltage Drain Current IDSS

VDS=Max. Rating, VGS=0V - - 50 µA

VDS=0.8Max. Rating,

VGS=0V, TC=125°C- - 200 µA

Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω

Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - S

Input Capacitance CissVGS=0V, VDS=25V,

f=1MHz

- 314.9 -

pFOutput Capacitance Coss - 47 -

Reverse Transfer Capacitance Crss - 9 -

Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A

(MOSFET switching

time is essentially

independent of

operating temperature)

- 11.2 -

nSRise Time tr - 34 -

Turn Off Delay Time td(off) - 28.2 -

Fall Time tf - 32 -

Total Gate Charge

(Gate-Source+Gate-Drain)Qg

VGS=10V, ID=1.0A,

VDS=0.5BVDSS (MOSFET

switching time is

essentially independent of

operating temperature)

11.93

nCGate-Source Charge Qgs - 1.95 -

Gate-Drain (Miller) Charge Qgd 6.85

S1

R----=

KA5X03XX-SERIES

6

Electrical Characteristics (Control Part) (Continued)

(Ta = 25°C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS(water test) process

Characteristic Symbol Test condition Min. Typ. Max. Unit

UVLO SECTION

Start Threshold Voltage VSTART VFB=GND 14 15 16 V

Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V

OSCILLATOR SECTION

Initial Accuracy FOSCKA5H0365R

KA5H0380R90 100 110 kHz

Initial Accuracy FOSC

KA5M0365R

KA5M0365RN

KA5M0380R

61 67 73 kHz

Initial Accuracy FOSC

KA5L0365R

KA5L0365RN

KA5L0380R

45 50 55 kHz

Frequency Change With Temperature (2) - -25°C≤Ta≤+85°C - ±5 ±10 %

Maximum Duty Cycle DmaxKA5H0365R

KA5H0380R62 67 72 %

Maximum Duty Cycle Dmax

KA5M0365R

KA5M0365RN

KA5M0380R

KA5L0365R

KA5L0365RN

KA5L0380R

72 77 82 %

FEEDBACK SECTION

Feedback Source Current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA

Shutdown Feedback Voltage VSD Vfb>6.5V 6.9 7.5 8.1 V

Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA

REFERENCE SECTION

Output Voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V

Temperature Stability (1)(2) Vref/∆T -25°C≤Ta≤+85°C - 0.3 0.6 mV/°C

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit IOVER Max. inductor current 1.89 2.15 2.41 A

PROTECTION SECTION

Over Voltage Protection VOVP VCC>24V 25 27 29 V

Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C

TOTAL STANDBY CURRENT SECTION

Start-up Current ISTART VCC=14V - 100 170 µA

Operating Supply Current

(Control Part Only)IOP VCC<28 - 7 12 mA

KA5X03XX-SERIES

7

Typical Performance Characteristics(SenseFET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

1 100.1

1

10

@Notes: 1. 300 µs Pulse Test

2. TC = 25 oC

VGS

Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0VBottom:4.5V

I D, D

rain

Curr

ent [

A]

VDS, Drain-Source Voltage [V]

2 4 6 8 100.1

1

10

@Notes: 1. V

DS = 30V

2. 300 µs Pulse Test

-25oC25 oC

150 oC

I D, D

rain

Curr

ent [

A]

VGS, Gate-Source Voltage [V]

0 1 2 3 4 50

1

2

3

4

5

6

7

@ Note : Tj=25!

Vgs=10V

Vgs=20V

RDS(

on) ,

["]

Dra

in-S

ourc

e O

n-R

esis

tance

ID,Drain Current [A]0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

@Notes : 1. VGS = 0 V 2. 300 µs Pulse Test

25 oC150 oC

I DR, R

eve

rse D

rain

Curr

ent [

A]

VSD, Source-Drain Voltage [V]

100 1010

100

200

300

400

500

600

700

Crss

Coss

Ciss

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

Capaci

tance

[pF]

VDS, Drain-Source Voltage [V]

0 5 10 15 20 250

2

4

6

8

10

VDS

=520V

VDS

=320V

VDS

=130V

@ Note : ID=3.0A

VG

S,G

ate

-Sourc

e V

olta

ge[V

]

QG,Total Gate Charge [nC]

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

8

Typical Performance Characteristics (Continued)

-50 0 50 100 1500.8

0.9

1.0

1.1

1.2

@ Notes :

1. VGS

= 0V

2. ID = 250µA

TJ, Junction Temperature [oC]

BV

DS

S, (N

orm

ali

zed)

Dra

in-S

ourc

e B

reakd

ow

n V

olta

ge

-50 0 50 100 1500.0

0.5

1.0

1.5

2.0

2.5

@ Notes: 1. V

GS = 10V

2. ID = 1.5 A

TJ, Junction Temperature [oC]

RD

S(o

n),

(No

rma

lized

)

Dra

in-S

ou

rce O

n-R

esi

stan

ce

100 101 102 10310-2

10-1

100

101

102

10 µs

DC

100 µs

1 ms

10 ms

@ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

Operation in This Area

is Limited by R DS(on)

ID , Drain Current [A]

VDS , Drain-Source Voltage [V]

25 50 75 100 125 1500.0

0.5

1.0

1.5

2.0

2.5

3.0

I D, D

rain

Curr

ent [

A]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. ZθJC

(t)=1.25 oC/W Max.

2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC

(t)

ZθJC(t) , Thermal Response

t1 , Square Wave Pulse Duration [sec]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

KA5X03XX-SERIES

9

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

100 10110-1

100

101

@Notes: 1. 300µs Pulse Test

2. TC = 25 oC

VGS

Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0VBottom:4.5V

I D, D

rain

Curr

ent [

A]

VDS, Drain-Source Voltage [V]

2 4 6 8 1010-1

100

101

@ Notes: 1. V

DS = 30 V

2. 300 µs Pulse Test

-25 oC25oC

150oC

I D, D

rain

Curr

ent [

A]

VGS, Gate-Source Voltage [V]

0.4 0.6 0.8 1.00.1

1

10

@ Notes: 1. V

GS = 0V

2. 300 µs Pulse Test

25oC150oC

I DR, R

eve

rse D

rain

Curr

ent [

A]

VSD, Source-Drain Voltage [V]

100 1010

100

200

300

400

500

600

700

800

900

1000

Crss

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Capaci

tance

[pF]

VDS, Drain-Source Voltage [V]

0 5 10 15 20 25 300

2

4

6

8

10

@ Note : ID=3.0A

VDS

=640V

VDS

=400V

VDS=160V

VG

S,G

ate

-Sourc

e V

olta

ge[V

]

QG,Total Gate Charge [nC]

0 1 2 3 40

1

2

3

4

5

6

7

8

Vgs=10V

Vgs=20V

@ Note : Tj=25!

Fig3. On-Resistance vs. Drain Current

RD

S(o

n) ,

["]

Dra

in-S

ourc

e O

n-R

esis

tance

ID,Drain Current

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

10

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. ZθJC

(t)=1.25 oC/W Max.

2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC

(t)

ZθJC(t) , Thermal Response

t1 , Square Wave Pulse Duration [sec]

-50 0 50 100 1500.8

0.9

1.0

1.1

1.2

@ Notes :

1. VGS = 0V

2. ID = 250µA

TJ, Junction Temperature [oC]

BV

DS

S, (N

orm

alize

d)

Dra

in-S

ourc

e B

reakd

ow

n V

oltage

-50 0 50 100 1500.0

0.5

1.0

1.5

2.0

2.5

RD

S(o

n),

(Norm

alize

d)

Dra

in-S

ourc

e O

n-R

esi

stance

TJ, Junction Temperature [oC]

@ Notes:

1. VGS = 10V

2. ID = 1.5 A

101 102 10310-2

10-1

100

101

102

100 µs

DC

10 µs

1 ms

10 ms

@ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

Operation in This Area is Limited by R

DS(on)

ID , Drain Current [A]

VDS , Drain-Source Voltage [V]

40 60 80 100 120 1400.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

I D, D

rain

Curr

ent [

A]

TC, Case Temperature [oC]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

KA5X03XX-SERIES

11

Typical Performance Characteristics(SenseFET part) (Continued)

(KA5M0365RN, KA5L0365RN)

100

101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

# Note :

1. 250$ s Pulse Test

2. TC = 25!

I D, D

rain

Cur

rent

[A]

VDS

, Drain-Source Voltage [V]

2 4 6 8 1010

-1

100

101

# Note

1. VDS

= 50V

2. 250$ s Pulse Test

-55!150!

25!

I D , D

rain

Curr

ent [A

]

VGS

, Gate-Source Voltage [V]

0 1 2 3 4 5 6 72.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

VGS

= 20V

VGS

= 10V

# Note : TJ = 25!

RD

S(O

N) [%

],D

rain

-Sour

ce O

n-R

esis

tanc

e

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.410

-1

100

101

25!

150!

# Note :

1. VGS

= 0V

2. 250$ s Pulse Test

I DR , R

eve

rse D

rain

Curr

ent [A

]

VSD

, Source-Drain Voltage [V]

10-1

100

101

100

200

300

400

500

600

700

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

# Note ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacita

nce

s [pF

]

VDS

, Drain-Source Voltage [V]

0 2 4 6 8 10 120

2

4

6

8

10

12

VDS

= 325V

VDS

= 130V

VDS

= 520V

# Note : ID = 3.0 AV

GS,

Ga

te-S

ou

rce

Vo

lta

ge

[V

]

QG, Total Gate Charge [nC]

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

12

Typical Performance Characteristics (Continued)

( KA5M0365RN, KA5L0365RN)

-50 0 50 100 150

0.90

0.95

1.00

1.05

1.10

1.15

# Note :

1. VGS

= 0 V

2. ID = 250 $ A

BV

DS

S, (N

orm

aliz

ed)

Dra

in-S

ourc

e B

reakdow

n V

oltage

TJ, Junction Temperature [

oC]

-50 0 50 100 150

0.5

1.0

1.5

2.0

2.5

# Note :

1. VGS

= 10 V

2. ID = 1.5 A

RD

S(O

N),

(Norm

aliz

ed)

Dra

in-S

ourc

e O

n-R

esis

tance

TJ, Junction Temperature [

oC]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

100

101

102

10-3

10-2

10-1

100

101

DC10 s

1 s

100 ms

10 ms

1 ms

100 µs

10 µs

Operation in This Area

is Limited by R DS(on)

I D, D

rain

Curr

ent [A

]

VDS

, Drain-Source Voltage [V]

25 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

0.5

I D, D

rain

Cur

rent

[A

]

TC, Case Temperature [? ]

1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000

0.1

1

10

0.05

0.02

0.01

single pulse

0.2

0.1

D=0.5

? Notes :

1. Z? JC

(t) = 80 ? /W Max.

2. Duty Factor, D=t1/t

2

3. TJM

- TC = P

DM * Z

? JC(t)Z

?JC(t

), T

he

rma

l R

esp

on

se

t1, Square Wave Pulse Duration [sec]

KA5X03XX-SERIES

13

Typical Performance Characteristics (Control Part) (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.1 Operating Frequency

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 &00 &25 &50

Fosc

Fig.2 Feedback Source Current

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Operating Current

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Current

0.8

0.85

0.9

0.95

1

1.05

1.1

-25 0 25 50 75 100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig.6 Start Threshold Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstart

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up Current Figure 6. Start Threshold Voltage

Iover

KA5X03XX-SERIES

14

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.7 Stop Threshold Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstop

Fig.8 Maximum Duty Cycle

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Vz

Fig.10 Shutdown Feedback Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vsd

Fig.11 Shutdown Delay Current

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over Voltage Protection

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

KA5X03XX-SERIES

15

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

Fig.13 Soft Start Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vss

Fig.14 Drain Source Turn-on

Resistance

0

0.5

1

1.5

2

2.5

-25 0 25 50 75 100 125 150

Rdson( )

KA5X03XX-SERIES

16

Package Dimensions

TO-220F-4L

KA5X03XX-SERIES

17

Package Dimensions (Continued)

TO-220F-4L(Forming)

KA5X03XX-SERIES

18

Package Dimensions (Continued)

8-DIP

KA5X03XX-SERIES

19

Ordering Information

TU :Non Forming Type

YDTU : Forming type

Product Number Package Marking Code BVDSS FOSC RDS(on)

KA5H0365RTU TO-220F-4L5H0365R 650V 100kHz 3.6Ω

KA5H0365RYDTU TO-220F-4L(Forming)

KA5M0365RTU TO-220F-4L5M0365R 650V 67kHz 3.6Ω

KA5M0365RYDTU TO-220F-4L(Forming)

KA5L0365RTU TO-220F-4L5L0365R 650V 50kHz 3.6Ω

KA5L0365RYDTU TO-220F-4L(Forming)

KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6Ω

KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6Ω

Product Number Package Marking Code BVDSS FOSC RDS(on)

KA5H0380RTU TO-220F-4L5H0380R 800V 100kHz 4.6Ω

KA5H0380RYDTU TO-220F-4L(Forming)

KA5M0380RTU TO-220F-4L5M0380R 800V 67kHz 4.6Ω

KA5M0380RYDTU TO-220F-4L(Forming)

KA5L0380RTU TO-220F-4L5L0380R 800V 50kHz 4.6Ω

KA5L0380RYDTU TO-220F-4L(Forming)

KA5X03XX-SERIES

12/12/02 0.0m 001Stock#DSxxxxxxxx

2002 Fairchild Semiconductor Corporation

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.