6 emc simulations of pe systems - cottet

7/22/2019 6 EMC Simulations of PE Systems - COTTET

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ABB GroupJune 2, 2010 | Slide 1

Didier Cottet, Stanislav Skibin, Ivica StevanovicABB Switzerland Ltd., Corporate Research, 28. May 2010

EMC Simulations of Power

Electronic Devices and Systems


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Outline

! Introduction! Numerical Method! Device Simulations! System Simulations!

Conclusion


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IntroductionPE in Power Supply & Distribution

Solar inverters

Photovoltaic

Static excitation systems

Power

stations

SVC Light withenergy storage

Grid stabilization


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AC drives for pumpsHVDC for shoreconnection

Oil platforms


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Generator frequencyconverter

HVDC for shoreconnection

StatComs for grid code

Wind parks


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IntroductionEMC / EMI in Power Electronics

! EMC (compatibility)! Standards compliancy! Switching harmonics / THD

(up to 25th / 40th harmonic)

! Conducted emissions(150 kHz 30 MHz)

! Radiated emissions(30 MHz 1 GHz)

! EMI (interferences)! Malfunction through self disturbance! Performance de-rating

! through load imbalance! through voltage/currents overshoots

! Low ruggedness in short circuit mode! Electric stress through ringing and oscillations


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Outline


Conclusion


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MethodologyPEEC Partial Element Equivalent Circuits

1) 3D geometry descriptionand materials definition

2) Geometry subdivision" Nodes

3) Surface mesh" Node capacitances, C to GND

to other nodes

4) Volume mesh" Node-to-node

resistances, Rself inductances, L

" Mutual inductances, M

5) RLCM-circuit description


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MethodologyModeling Procedures

! 3D Broadband Solution! Time and frequency

domain

! Current and potentialdistributions

! E-/H-fields! Linear elements only! Slow

! 0D Narrowband Solution! Valid around frequencyfextr! Time and frequency

domain

! Nonlinear elements! No current/potential

distributions

! No E-/H-fields! FastSPICE, Simplorer,

Order reduced Z-matrixfor defined frequencyfextr


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Outline


Conclusion


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Simulated DeviceIGBT Power Modules

! Example: HiPak IGBT power module! Rating: 6.5 kV, 2.4 kA! 24 parallel IGBTs! 12 anti-parallel diodes

! EMI related design issues! Dynamic / static current distribution! Short circuit capabilities! EM noise emission! CM coupling through base plate

! Dominant effect! Local disturbances in

IGBT gate voltages, UGE

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ModelingPackage Macro Modeling

! 3D PEEC model! Substrates! Bond wires! Power terminals! Auxiliary terminals

! Extraction of SPICEcompatible Z-matrix(0D narrowband solution)

**********************************************

*** subcircuit for hipak_package v1.0**********************************************

.subckt hipak_package_v1 1 2 3 4 5 6 7 8 9 10

1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26

2728 29 30 31 32 33 34 35 36 37 38

LZ_0 1 i_node0_2 2.25402e-008LZ_1 3 i_node1_2 1.44454e-008

LZ_2 5 i_node2_2 9.15187e-009

LZ_3 7 i_node3_2 2.30544e-008LZ_4 9 i_node4_2 1.48664e-008

.

.

.

KZ_1_0 LZ_1 LZ_0 0.888218KZ_2_0 LZ_2 LZ_0 0.662318

KZ_2_1 LZ_2 LZ_1 0.812005KZ_3_0 LZ_3 LZ_0 0.0200939

KZ_3_1 LZ_3 LZ_1 -0.0428358

.

.

.RZ_0_0 i_node0_2 i_node0_3 0.000948648

HZ_0_1 i_node0_3 i_node0_4 Vam_1 0.000703874

HZ_0_2 i_node0_4 i_node0_5 Vam_2 0.000529978HZ_0_3 i_node0_5 i_node0_6 Vam_3 4.56201e-005

HZ_0_4 i_node0_6 i_node0_7 Vam_4 4.65392e-005

HZ_0_5 i_node0_7 i_node0_8 Vam_5 4.79563e-005.

.

.

Vam_18 i_node18_21 38 dc=0v

.ends


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ModelingCircuit Model

Package

Z-matrix

Gate signal

Load

IGBTs &

diodes

IGBTs &

diodes


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ResultsSwitching Analysis

! Initial design! Asymmetric current sharing

between paralleled IGBTs

"up to 140 % currentovershoot per IGBT

! Optimized design! Symmetric current sharing

between paralleled IGBTs

"max 60 % currentovershoot per IGBT

IGBTs1-4

IGBTs5-8


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ResultsH-Field Coupling Analysis

! Understand coupling effects through visualization ofmagnetic field vectors andcurrent density distributions

! Asymmetric coupling into VGE! Asymmetric terminal current paths! Open coupling loops in gate-emitter paths

(Note: 3D simulation using TLM method, Transmission Line Matrix)


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Outline


Conclusion


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System SimulationsNew Challenges

! Complexity! Number of components

! Number of simulation cases! Physical dimensions

!Availability of input data


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Case StudyMedium Voltage Static Frequency Converter

! Static Frequency Converter! 16 inverter units

(IGCTs, 3-level ANPC)

! 1 common DC bus(~11 m length, +/neutral/-)

! 18 DC link capacitors(film capacitors)

"Distributed, low resistive LC circuit

"Risk of ringing and oscillations

"EM noise and thermal stress of DC link capacitors


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ModelingObjectives

! DC-link system impedance simulation! Identify system resonances! Analysis of individual impedance contributions

(bus bars, junctions, capacitors, cables)

! Design goal: reduce stray inductances


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ModelingBus Bar Thickness vs. Frequency

! Bus bar thickness: t = 2 cm! Frequency of interest: DC to 10 kHz"Skin depth ~ bar thickness

"Need for accurate & efficient volume discretization

"Non-uniform cross-sectional meshing


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Model VerificationSimulations vs. Measurements

"High accuracy with 0D narrowband solution

Impedance measurement setup

short circuit,0D narrowband

meas.sim.

Capacitor cables to bus bar

capacitive load,0D narrowband

meas.sim.


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Model ImprovementAcceleration

! Accurate volumediscretization for skin-and proximity effects

! Large PEEC model! Many ports! Large RL-matrix

in Simplorer

left 7 x intermediate right

! Acceleration throughdivide and conquer(domain decomposition)

! 3 small PEEC model! Few ports! 9 small RL-matrices

in Simplorer


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Model ImprovementFull Model

!9


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Model ImprovementDecomposed (Segmented) Model

!9


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Model ImprovementVerification

"High agreement between full

and segmented model

"High agreement between3D broadband PEEC and

0D narrowband segmented

model

- Full model- Segmented

model

- Full model- Segmented

model

- 0D narrowband3D broadband


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ResultsImpedance Discussion

! Single capacitor connectedat far end of bus bar

Cap + cables + bus bar

Cap + cables

Cap

" Impact onfres:

bus bar and cables

! Nine capacitors connectedalong bus bar

Complete bus bar

Simplified bus bar(no junction elements)

Ideal connection

" Impact onZcharacteristics:

bus bar and junctions


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Outline

! Introduction! Numerical Method! Device Simulations! System Simulations! Conclusion


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Conclusion

! Power electronics omnipresent in power T&D! EMC and EMI in power electronics are known issues

! PEEC as promising numerical method for its flexibility! Frequency range (DC to HF)! Scalability (R, L, C)! Time- and frequency domain! Circuit formulation

! Device simulations: Advanced state-of-the-art for! System simulations: Efficient methods in available & in use! Effective acceleration methods for large system simulations

! PEEC simulations as powerful tool for bus bar design


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6 emc simulations of pe systems - cottet

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