6924 04 winfried kaiser
TRANSCRIPT
-
7/27/2019 6924 04 Winfried Kaiser
1/16
The future of EUVL
by
Winfried Kaiser,
Udo Dinger, Peter Kuerz,
Martin Lowisch,
Hans-Juergen Mann,
Stefan Muellender,
. ,
Jos Benshop,
Steven G. Hansen,
Koen van Ingen-Schenau
Outline
Introduction
Imaging requirements of future nodes
High NA optics
Infrastructure and Technology
For public use Seite 20940_tuesday_6924-4_Winfried_Kaiser.ppt
Summary
-
7/27/2019 6924 04 Winfried Kaiser
2/16
Status Alpha Demo Tool
30 nm
42 mJ/cm232 nm
40 mJ/cm2
30 nm
24 mJ/cm232 nm
24 mJ/cm2
For public use Seite 30940_tuesday_6924-4_Winfried_Kaiser.ppt
1st scanner able to print dense features in single exposure
See also: Emerging Lithographic Technologies XII
Hans Meiling: Field performance of the EUV alpha demo tools
Tuesday, 26 February 2008, 1:20 PM 1:50 PM
(nm)
200
Why EUV?
ASML Product
XT:1400
XT:1700i
AT:1200
Resolution,
Shrin
100
80
60
40 Immersion
For public use Seite 40940_tuesday_6924-4_Winfried_Kaiser.ppt
Year of Production Start*
Introduction XT:1900iNEXT
EUV30
20
02 10 121107 090804 060503 13 14
EUV
Double patterning
Note: Process development
1.5 ~ 2 years in advance / updated 12/07
-
7/27/2019 6924 04 Winfried Kaiser
3/16
Why EUVL: 22nm SRAM approaches
cell area
0.16u2
approx SE
standard layout
(optimized) more DFM?
asym shrink
??
more DFM?
DPT, 3PT, 4PT
??
higher NA SE
or EUV
1.35NA
0.10u2
limit with
1.35NA and
standard
design
Best 2-way split
k1=0.31
k1=0.31
4
k1 relative to
0.09u2 target
1.7NA
193nm SE
38 nm
For public use Seite 50940_tuesday_6924-4_Winfried_Kaiser.ppt
EUV allows the patterning of complex, dense features in a single exposure step!
0.06u2
22nm node
target range
-
k1=0.55
k1=0.53
k1=0.48
k1=0.48
0.25NA EUV
m cm
Outline
Introduction
Imaging requirements of future nodes
High NA optics
Infrastructure and Technology
For public use Seite 60940_tuesday_6924-4_Winfried_Kaiser.ppt
Summary
-
7/27/2019 6924 04 Winfried Kaiser
4/16
EUV Optics: The future
EUV is introduced as a high k1 technology
Node \ NA 0.25 0.32 0.45
32 nm 0.59 0.76 1.07
22 nm 0.41 0.52 0.73
16 nm 0.30 0.38 0.53
11 nm 0.20 0.26 0.37
NAkRES
1=
k1reduction
For public use Seite 70940_tuesday_6924-4_Winfried_Kaiser.ppt
opportunity
EUV will follow the optical path with high NA and k1 reduction
32 nm features
Dense Lines
conventional illumination0.6
0.7
0.8
1.5
2
2.5
3
0.6
0.7
0.8
1.5
2
2.5
3best focus 75 nm defocus
NILS NILS
lcoherence
Dense contacts
conventional illumination
0.6
0.7
0.8
1.5
2
2.5
3
0.6
0.7
0.8
1.5
2
2.5
3
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
tialcoherence
Parti
For public use Seite 80940_tuesday_6924-4_Winfried_Kaiser.ppt
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1Pa
NA NA
Flare: 6%, WFE: 0.5 nm rms
NILS target: 2
-
7/27/2019 6924 04 Winfried Kaiser
5/16
0.6
0.7
0.8
1.5
2
2.5
3
0.6
0.7
0.8
1.5
2
2.5
3
NILS NILS
oherence
best focus 50 nm defocus
Dense Lines
conventional illumination
22 nm features
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
Partialc
centerA
0.6
0.7
0.8
1.5
2
2.5
3
0.6
0.7
0.8
1.5
2
2.5
3
Dense contacts
conventional illumination
For public use Seite 90940_tuesday_6924-4_Winfried_Kaiser.ppt
NA NA
Sigm
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
NA 0.32 enables 22nm patterning with conventional illumination
NILS NILS
acenterA
best focus 50 nm defocus
Dense Lines
annular illumination
0.6
0.7
0.8
2
2.5
3
0.6
0.7
0.8
2
2.5
3
16 nm features
0.6
0.7
0.8
1.5
2
2.5
3
0.6
0.7
0.8
1.5
2
2.5
3
Sig
acenterQ
A
Dense contacts
quasar illumination
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
1.5
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
1.5
For public use Seite 100940_tuesday_6924-4_Winfried_Kaiser.ppt
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
0.2 0.3 0.4
0.3
0.4
0.5
0
0.5
1
NA NA
Sigm
Q
and even 16nm with off axis illumination
-
7/27/2019 6924 04 Winfried Kaiser
6/16
NILS NILS
centerA
best focus 40 nm defocus
Dense Lines
annular illumination
0.6
0.7
0.8
1.5
2
2.5
3
0.6
0.7
0.8
1.5
2
2.5
3
11 nm features
0.6
0.7
0.8
1.5
2
2.5
3
0.6
0.7
0.8
1.5
2
2.5
3
Sigm
centerQ
A
Dense contacts
quasar illumination
0.4 0.5 0.6
0.3
0.4
0.5
0
0.5
1
0.4 0.5 0.6
0.3
0.4
0.5
0
0.5
1
For public use Seite 110940_tuesday_6924-4_Winfried_Kaiser.ppt
0.4 0.5 0.6
0.3
0.4
0.5
0
0.5
1
0.4 0.5 0.6
0.3
0.4
0.5
0
0.5
1
NA NA
Sigm
Q
11nm can be imaged with NA > 0.45 and off axis illumination
Outline
Introduction
Imaging requirements of future nodes
High NA optics
Infrastructure and Technology
For public use Seite 120940_tuesday_6924-4_Winfried_Kaiser.ppt
Summary
-
7/27/2019 6924 04 Winfried Kaiser
7/16
The path to NA = 0.32
Slit length 26mm
MAG = 4x
Enabling for higher NA:
Larger mirror sizes
Stronger aspheres
For public use Seite 130940_tuesday_6924-4_Winfried_Kaiser.ppt
NA 0.25 NA 0.32
Full field 6 mirror designs can be extended to NAs around 0.32
Apodization is limiting 6M designs
center of field (x=0)
edge of field (x=13mm)
For public use Seite 140940_tuesday_6924-4_Winfried_Kaiser.ppt
The larger NA introduce a high angular load on surfaces which cause significant apodisation effects
Balancing of optical and coating design is needed to achieve a (quasi) rotational symmetric
apodisation uniform over the field
-
7/27/2019 6924 04 Winfried Kaiser
8/16
full field
NA > 0.4 : Way out with central
obscuration
M5
reduced
field
For public use Seite 150940_tuesday_6924-4_Winfried_Kaiser.ppt
M5Central obscuration solves the apodisation issue but limits the field size.
Full field designs show big central obscurations.
In addition stopping down increases the obscuration ratio.
NA 0.5
NA 0.32,
Annular 0.6-0.8
16nm feature size
Imaging effect of apodisation and
central obscuration
Model pupil:
2/3
1/3
For public use Seite 160940_tuesday_6924-4_Winfried_Kaiser.ppt
Area with reduced
transmission/obscuration
Transmission100%
The prime effect of apodisation and central obscuration
can be compensated by CD biasing
-
7/27/2019 6924 04 Winfried Kaiser
9/16
Alternative with NA>0.4
8M designs allow unobscured full field
systems with NA 0.5.
The two additional mirrors cause a
For public use Seite 170940_tuesday_6924-4_Winfried_Kaiser.ppt
reduction of system transmission by
at least a factor of 2.
NA 0.5
Extending NA to 0.7
For public use Seite 180940_tuesday_6924-4_Winfried_Kaiser.ppt
NA 0.7
For NA 0.7 the only
design solutions are
obscured 8M systems
-
7/27/2019 6924 04 Winfried Kaiser
10/16
High NA solution roadmap
Solution overview:
8M
6M
..
unobscured
..
For public use Seite 190940_tuesday_6924-4_Winfried_Kaiser.ppt
central obscured
(smaller fields)
There are design solutions for high NA systems enabling 11 nm and beyond
Res 2014 201520132010 2011 2012
EUVL Roadmap down to 11nm
11nm
16nm
22nm
same lens,
enhanced
off axis
illumination 0.32NA, 3nm OVL, >100wph
0.32NA +off axis illumination
0.4xNA
For public use Seite 200940_tuesday_6924-4_Winfried_Kaiser.ppt
27nm 0.25NA, 4nm OVL
-
7/27/2019 6924 04 Winfried Kaiser
11/16
Outline
Introduction
Imaging requirements of future nodes
High NA optics
Infrastructure and Technology
For public use Seite 210940_tuesday_6924-4_Winfried_Kaiser.ppt
Summary
Z-graded multilayers
EUV Coatings
8 1dR0(0-18)=72%
0.7
0.8
0
2
4
6
2
3
Layerthickness,nm
dSi
dMoperiod. ML
R0(0-18)=64%R0=60%
R0=58%
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Reflectivity
For public use Seite 220940_tuesday_6924-4_Winfried_Kaiser.ppt
Z-grading of EUV multilayers improves the angular acceptance
on cost of peak reflectivity and therefore system transmission
Bi-layer numberIncidence angle, degrees
-
7/27/2019 6924 04 Winfried Kaiser
12/16
0,45
0,50
0,55
des)
Set 1
MET2 mirrors
on-axis
AD-tool6 mirrors
off-axis
Preproduction
tool
Productiontoolstestmirror
Progress in flare reduction
0,15
0,20
0,25
0,30
0,35
0,40
MSFR
[nmrms]
(evaluatedover4.6dec
Set 3
Set 2
test mirror
setup
POB
a us: are eve
Figure = 0.04 nm rms
MSFR = 0.13 nm rms
HSFR = 0.07 nm rms
8% flare
For public use Seite 230940_tuesday_6924-4_Winfried_Kaiser.ppt
0,05
0,10
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
(MSFR
opt.)
16% flare
tools
Flare is calculated for a 2 m
line in a bright field
arget: are
Flare will be improved further to secure high imaging performance
for smaller feature sizes
Impact of CRAO change (1)
ChiefRay Angle on Object side ()
EUV optics has to be non-telecentric on reticle side.
Actual standard is 6 this limits the NA to < 0.4 Ma 4x .
For larger NAs the CRAO has to be increased accordingly.
Example:
3
4
5
6
7
8
Vmaskbias(nm)
For public use Seite 240940_tuesday_6924-4_Winfried_Kaiser.ppt
0
1
2
5 6 7 8 9 10
CRAO
required
H
NA=0.45, annular illumination
Mask stack wih 67nm TaN absorber
-
7/27/2019 6924 04 Winfried Kaiser
13/16
Impact of CRAO change (2)
Required delta bias HV
5
6
7
)
Att PSM Stack (11nm)
17nm TaN (magenta)
Required delta bias HV
0
1
2
3
4
6 7 8 9
CRAO (deg)
bias
(nm
required delta bias HV21nm Ru (green)
11nm Si (blue)
40 MoSi bilayer
The impact of a change of CRAO is not well understood today in full extent.
Our view is that there are no showstoppers for an increase to 9 - 10 allowing full
CRAO (deg)Source: Samsung
11nm DL
NA=0.45
Quasar
For public use Seite 250940_tuesday_6924-4_Winfried_Kaiser.ppt
.
where on the effect on imaging by larger CRAOs can be compensated by biasing
without critical impact.
The only alternative for NA > 0.4 would be to go to higher Mag (5x, 6x, 8x) whichwould limit the usable field size in 2 dimensions with significant impact on
productivity or require larger mask sizes.
EUV Source power
wp
(full field optics)
For public use Seite 260940_tuesday_6924-4_Winfried_Kaiser.ppt
Source: Cymer
-
7/27/2019 6924 04 Winfried Kaiser
14/16
EUV source power vs. resist sensitivity
1400
16008 mirror POB
6 mirror POB
200
400
600
800
1000
1200
Power[Watt@I
FIB]
@ 100 wph
For public use Seite 270940_tuesday_6924-4_Winfried_Kaiser.ppt
To keep the required source power (at intermediate focus in band)
in a realistic range, resist sensitivity must target 10 mJ /cm2
0
0 10 20 30 40
Resist sensitivity [mJ/cm^2]
Effective etendue for
off axis illumination
out
Conventional
out in
Annular Quasar 45
out in
-
1.40.70.40.6-0.8Annular
3.21.61.00.8Conventional
NA=0.45NA=0.32NA=0.25Setting
relative etendue (@fixed slit size)
out= 0.8 in = 0.0 out= 0.8 in = 0.6 out= 1.0 in = 0.6
For public use Seite 280940_tuesday_6924-4_Winfried_Kaiser.ppt
... - .
Off axis illumination will reduce the effective etendue the illumination system
can accept from the source. Therefore the source etendue covering the full
source power has to be small enough to avoid any productivity loss for these
settings. Since the etendue grows with NA, in future larger source etendues
can be accepted or more aggressive off axis settings can be used.
-
7/27/2019 6924 04 Winfried Kaiser
15/16
0.8
1.0
stloss
flare
flare + aberrations
Resist effect on imaging
1:1 L/S
0.0
0.2
0.4
0.6
12 17 22 27 32 37
relativecontr
5nm resist blur
flare + aberrations +
10nm resist blur
flare + aberrations +
15nm resist blur
Assumptions:
Flare: 4% system, 50% mask trans
Aberration: 0.5nm RMS
Resist treated as a Gaussian (1) image blur Relative contrast loss calculated based on
For public use Seite 290940_tuesday_6924-4_Winfried_Kaiser.ppt
a -p tc nm MTF contrast
See also:
Advances in Resist Materials and Processing Technology XXV
K. van Ingen Schenau: Photoresist-induced contrast loss and
its impact on EUV imaging extendibility
Wednesday, 27 February 2008 9:40 AM 10:00 AM
Resist diffusion has strongest effect on contrast loss.
For pattern transfer of very fine features significant improvement
of resist blur (diffusion) to finally 5nm are needed
Outline
Introduction
Imaging requirements of future nodes
High NA optics
Infrastructure and Technology
For public use Seite 300940_tuesday_6924-4_Winfried_Kaiser.ppt
Summary
-
7/27/2019 6924 04 Winfried Kaiser
16/16
Summary: the extendibility of EUVL
There are solutions visible for high NA design to 0.7 NA.The challenge will be to find full field designs with optimum
transmission to enable high productivity.
~ . .
These together will enable the printing of 11nm dense features in
single exposure mode and even beyond. Improvements in polishing
and coating technologies are expected to support this progress.
Mask technology has to follow the resolution roadmap accordingly.
For larger NAs the CRAO has to be increased and the layer stack to be
adapted. The expectation is that neither increase of Mag and no larger
For public use Seite 310940_tuesday_6924-4_Winfried_Kaiser.ppt
.
Very important are improvements of resists:
Resist sensitivity have to target 10mJ/cm2 to keep the required sourcepower in a realistic target range of some 100W @ 100 wph tput.
To enable pattern transfer of features down to 11nm the resist blur
(diffusion length) has to be reduced to at least 5nm .
ACKNOWLEDGEMENT
Thanks
The activities received funding
by the European Commission in the project "More Moore"
and by various national European governments
including the German Federal Ministry of Education and Research
in the program MEDEA+ .
For public use Seite 320940_tuesday_6924-4_Winfried_Kaiser.ppt