a cmos direct sampling mixer using switched capacitor ......0 200 400 600 800-120-80-40 0 40...

2
A CMOS Direct Sampling Mixer Using Switched Capacitor Filter Technique for Software-Defined Radio Hong Phuc Ninh, Takashi Moue, Takashi Kurashina, Kenichi Okada, and Akira Matsuzawa Department of Physical Electronics, Tokyo Institute of Technology 2-12-1-S3-27 Ookayama, Meguro-ku, Tokyo 152-8552 Japan. Tel/Fax: +81-3-5734-3764, E-mail: [email protected] Abstract— This paper proposes a novel direct sampling mixer (DSM) using Switched Capacitor Filter (SCF) for multi-band receivers. The proposed DSM has a higher gain, more flexibility and lower flicker noise than that of conventional circuits. The mixer for Digital Terrestrial Television (ISDB-T) 1-segment was fabricated in a 0.18 µm CMOS process, and measured results are presented for a sampling frequency of 800 MHz. The ex- perimental results exhibit 430 kHz signal bandwith with 27.3 dB attenuation of adjacent interferer assuming at 3 MHz oset. I. Introduction Nowadays, dozens of wireless communication standards, e.g. GSM, UMTS, WLAN, Bluetooth, GPS, DTV, and RFID, have been used in mobile terminals. Thus it indicates a need for a flexible mobile terminal that can support many wire- less communication standards. However, the present multi- standard terminal consists of several LNAs, VCOs, Mixers. As a result, it becomes more complicated and needs larger area and power comsumption. A multi-standard RF front-end implemented in a single chip is required for smaller size, lower power [1]. Software-defined radio (SDR) is focused to satisfy these requirements. The adoption of Muli-tap Direct Sampling Mixer (MTDSM), proposed recently by R.B. Staszewski, et al [2], is one of promising approaches for SDR. However, the conventional MTDSM consists of passive components, thus large gain loss and low order of the filter are unavoidable problems. Moreover, it is a little dicult to be applied to the wideband wireless applications, e.g. WLAN, UWB, etc, due to narrow pass-band characteristics of MTDSM. In addition the flicker noise is also a tough problem of the conventional MTDSM due to the passband characteristics. In this paper, we propose a MTDSM using Switched Capacitor Filter (SCF), which realizes more gain and flicker-noise supression. More- over, SCF in the proposed MTDSM contributes to provide higher-order filtering, which can realize gain flatness over the in-band. II. Proposed DSM Architecture Fig. 1 shows the proposed sampling mixer architecture, where RF input signal is sampled, filtered and decimated. This mixer is based on current-mode direct sampling, thus a transconductance amplifier (TA) is used to convert the received C H C 2 C 2 C 1 φ11 φ12 φ12 φ11 φ12 φ11 φ11 φ12 φ11 φ 11 φ12 φ 12 φ12 φ 12 φ11 φ 11 C O φ21 φ22 φ22 φ21 φ31 OpAmp OpAmp C S C H C R C 2 C2 C 1 φ11 φ12 φ12 φ11 φ12 φ11 φ11 φ12 φ11 φ 11 φ12 φ 12 φ12 φ 12 φ11 φ 11 C O φ21 φ22 φ22 φ21 φ31 LNTA RF LO+ LO- LO+ LO- C S C S C S C R C R C R Fig. 1. The proposed direct sampling mixer. RF voltage into current domain. The current gets sampled by the local oscillator and integrated into the sampling capacitor C S . During the phase ϕ11 (or ϕ12), the sampled RF inputs are accumulated on one C S , while the accumulated charge is read out to the next stage by another C S in the same time. Thus, it performs a Moving-Average (MA) Filtering. Moreover, one capacitor C R shares the charge with C H , a ”history” capacitor, and another C R is read out. The total charge stored in C H and C R at phase ϕ11 (or ϕ12) is equal to the sum of the remaining charge in the ”history” capacitor C H in the previous one and the accumulated charge of the sampling capacitor. This operation introduces an IIR Filtering. The second MA Filtering and IIR Filtering is realized with the same method according to the opposite operating of phase ϕ21 and phase ϕ22 in the next stage. In the conventional sampling mixer, DC and the harmonic frequency at multiple of local oscillator will also be aliased in with the sampled signal. Thus the DC component become large because of the aect of DC oset and 1/ f noise. As shown in Fig. 1, RF input signal, RF + and RF are alternately input to the filter core in the SCF mixer. According to that, the frequency response of the proposed mixer is shifted by π and

Upload: others

Post on 31-Jan-2021

3 views

Category:

Documents


0 download

TRANSCRIPT

  • A CMOS Direct Sampling MixerUsing Switched Capacitor Filter Technique

    for Software-Defined RadioHong Phuc Ninh, Takashi Moue, Takashi Kurashina, Kenichi Okada, and Akira Matsuzawa

    Department of Physical Electronics, Tokyo Institute of Technology2-12-1-S3-27 Ookayama, Meguro-ku, Tokyo 152-8552 Japan.Tel/Fax: +81-3-5734-3764, E-mail: [email protected]

    Abstract— This paper proposes a novel direct sampling mixer(DSM) using Switched Capacitor Filter (SCF) for multi-bandreceivers. The proposed DSM has a higher gain, more flexibilityand lower flicker noise than that of conventional circuits. Themixer for Digital Terrestrial Television (ISDB-T) 1-segment wasfabricated in a 0.18 µm CMOS process, and measured resultsare presented for a sampling frequency of 800 MHz. The ex-perimental results exhibit 430 kHz signal bandwith with 27.3 dBattenuation of adjacent interferer assuming at 3 MHz offset.

    I. Introduction

    Nowadays, dozens of wireless communication standards,e.g. GSM, UMTS, WLAN, Bluetooth, GPS, DTV, and RFID,have been used in mobile terminals. Thus it indicates a needfor a flexible mobile terminal that can support many wire-less communication standards. However, the present multi-standard terminal consists of several LNAs, VCOs, Mixers.As a result, it becomes more complicated and needs largerarea and power comsumption. A multi-standard RF front-endimplemented in a single chip is required for smaller size, lowerpower [1]. Software-defined radio (SDR) is focused to satisfythese requirements. The adoption of Muli-tap Direct SamplingMixer (MTDSM), proposed recently by R.B. Staszewski, etal [2], is one of promising approaches for SDR. However, theconventional MTDSM consists of passive components, thuslarge gain loss and low order of the filter are unavoidableproblems. Moreover, it is a little difficult to be applied to thewideband wireless applications, e.g. WLAN, UWB, etc, dueto narrow pass-band characteristics of MTDSM. In additionthe flicker noise is also a tough problem of the conventionalMTDSM due to the passband characteristics. In this paper, wepropose a MTDSM using Switched Capacitor Filter (SCF),which realizes more gain and flicker-noise supression. More-over, SCF in the proposed MTDSM contributes to providehigher-order filtering, which can realize gain flatness over thein-band.

    II. Proposed DSM Architecture

    Fig. 1 shows the proposed sampling mixer architecture,where RF input signal is sampled, filtered and decimated.This mixer is based on current-mode direct sampling, thus atransconductance amplifier (TA) is used to convert the received

    CH

    C2

    C2

    C1

    φ11 φ12

    φ12 φ11

    φ12 φ11

    φ11 φ12

    φ11

    φ11

    φ12φ12

    φ12

    φ12

    φ11φ11

    CO

    φ21

    φ22

    φ22

    φ21

    φ31

    OpAmp OpAmp

    CS

    CH

    CR

    C2

    C2

    C1

    φ11 φ12

    φ12 φ11

    φ12 φ11

    φ11 φ12

    φ11

    φ11

    φ12φ12

    φ12

    φ12

    φ11φ11

    CO

    φ21

    φ22

    φ22

    φ21

    φ31

    LNTARF

    LO+

    LO-LO+

    LO-

    CS

    CS

    CS

    CR

    CR

    CR

    Fig. 1. The proposed direct sampling mixer.

    RF voltage into current domain. The current gets sampled bythe local oscillator and integrated into the sampling capacitorCS. During the phase ϕ11 (or ϕ12), the sampled RF inputs areaccumulated on one CS, while the accumulated charge is readout to the next stage by another CS in the same time. Thus,it performs a Moving-Average (MA) Filtering. Moreover, onecapacitor CR shares the charge with CH, a ”history” capacitor,and another CR is read out. The total charge stored in CHand CR at phase ϕ11 (or ϕ12) is equal to the sum of theremaining charge in the ”history” capacitor CH in the previousone and the accumulated charge of the sampling capacitor.This operation introduces an IIR Filtering. The second MAFiltering and IIR Filtering is realized with the same methodaccording to the opposite operating of phase ϕ21 and phaseϕ22 in the next stage.

    In the conventional sampling mixer, DC and the harmonicfrequency at multiple of local oscillator will also be aliased inwith the sampled signal. Thus the DC component become largebecause of the affect of DC offset and 1/ f noise. As shown inFig. 1, RF input signal, RF+ and RF− are alternately inputto the filter core in the SCF mixer. According to that, thefrequency response of the proposed mixer is shifted by π and

  • 0 200 400 600 800-120

    -80

    -40

    0

    40

    Frequency [MHz]

    Vo

    lta

    ge

    Ga

    in [

    dB

    ]

    Fig. 2. Frequency response of SCF mixer.

    10k 100k 1M20

    25

    30

    35

    40

    NF

    [d

    B]

    Frequency [Hz]

    Fig. 3. The noise figure of SCF mixer.

    Fig. 4. Chip micrograph of SCF mixer.

    the aliased signal will not be aliased to the DC component,thus smaller DC component can be archieved. Fig. 2 and 3show the frequency response and noise figure of the proposedmixer respectively, where the TA, OPAmps, switches andbuffers were designed in MOS device but ideal digital clockingsignals. The simulations were performed by using 50Ω inputsignal sources and 50Ω terminations. As shown in Fig. 2, thepeak voltage gain is 21.6 dB, and in Fig. 3, NF is about 27 dBat 430 kHz.

    III. Measurement Result

    The proposed SCF direct sampling mixer has been designedfor operation at 800 MHz sampling frequency and 430 kHzbandwith. A LNTA, where gm is 10 mS at sampling frequency,is also included. In addition, two LNTA+DSM for IQ modeare also developed. The mixers and LNTAs have been im-plemented in TSMC 0.18 µm CMOS process. Fig. 4 shows a

    10k 100k 1M 10M-30

    -20

    -10

    0

    10

    20

    30

    Voltage G

    ain

    (S

    imula

    tion)

    [dB

    ]

    Frequency [Hz]

    -30

    -20

    -10

    0

    10

    20

    Pow

    er

    Gain

    (M

    easure

    ment)

    [dB

    ]

    Simulation

    Measurement

    Fig. 5. Down-converted frequency response of implemented SCF mixer.

    TABLE I

    DSM performance summary.

    Technology TSMC 0.18 µm CMOS processLocal Oscillator 800 MHz

    Bandwith 430 kHzPower [email protected] MHz input 12.4 dB

    Attenuation@3 MHz offset 27.3 dBSupply voltage VDD 1.8 V

    LNTA+DSM core current 18∼ 20 mAPower consumption 32.4∼ 36 mW

    Chip area 1150 µm × 750 µm

    chip micrograph of the implemented circuit. The core size is1150 µm × 750 µm.

    Two Signal Source Analyzers (Rohde & Schwarz SML02)and Spectrum Analyzer (Advantest R3267) were used for mea-surement. Fig. 5 shows down-converted frequency responseof the mixer. Because of the matching problem of the TAand the output buffer, the conversion gain (power gain) of theimplemented SCF mixer is small, about 12.4 dB at 400.1 MHzinput. However, the measured results have the same tendencywith the simulation, as shown in Fig. 5. Table I summarizesthe measured results.

    IV. ConclusionThis paper has proposed a novel direct sampling mixer using

    SCF with 1/ f noise suppression for software-defined radio.The proposed DSM is implemented in 0.18 µm CMOS pro-cess. Measurement results show that the circuit works correctlyand the experimental results exhibit 430 kHz signal bandwithwith 27.3 dB attenuation of adjacent interferer assuming at3 MHz offset.

    AcknowledgmentThis work is supported by VLSI Design and Education Center

    (VDEC), the University of Tokyo in collaboration with CadenceDesign Systems, Inc.

    References[1] H. Eul, “ICs for mobile multimedia communications,” Proc. of IEEE International

    Solid-State Circuits Conf., Feb. 2006, pp. 31–35.[2] R. B. Staszewski, et al., “All-Digital TX Frequency Synthesizer and Discrete-Ti

    me Receiver for Bluetooth Radio in 130-nm CMOS,” IEEE Journal of Solid-StateCircuits, Vol. 39, No. 12, pp. 2278-2291, Dec. 2004.