a cost quality model
TRANSCRIPT
A COST QUALITY MODEL
FOR CMOS IC DESIGN
by
Sandeep Deshpande
Thesis submitted to the Faculty of the
Virginia Polytechnic Institute and State University
in Partial fulfillment of the requirements for the degree of
Master of Science
in
Electrical Engineering
APPROVED:
Aeon 2 Ap Dr. S.F. Midkiff, Chairman
2. Online “at C=
r. JR. Armstrong Dr. P.M. Athanas SO
September, 1994
Blacksburg, Virginia
Ce
Lv
Si95 V8 S55 3 te
R474 Cia
A COST QUALITY MODEL
FOR CMOS IC DESIGN
by
Sandeep Deshpande
Dr. S.F. Midkiff, Chairman
Electrical Engineering
(ABSTRACT)
With a decreasing minimum feature size in very large scale integration (VLSI)
complementary metal oxide semiconductor (CMOS) technology, the number of transistors
that can be integrated on a single chip is increasing rapidly. Ensuring that these extremely
dense chips are almost free of defects, and at the same time, cost effective requires
planning from the initial stage of design. This research proposes a concurrent
engineering-based design methodology for layout optimization. The proposed method for
layout optimization is iterative, and layout changes in each design iteration are made based
on the principles of physical design for testability (P-DFT). P-DFT modifies a design such
that the circuit has fewer faults, difficult to detect faults are made easier to detect, and
difficult to detect faults are made less likely to occur.
To implement this design methodology, a mathematical model is required to evaluate
alternate designs. This research proposes an evaluation measure: the cost quality model.
The cost quality model extends known test quality and testability estimation measures for
gate-level circuits to switch-level circuits. To provide high fidelity in testability estimation
and reasonable CPU time overhead, the cost quality model uses inductive fault analysis
techniques to extract a realistic circuit fault list, Inne test generation techniques to generate
tests for these faults, statistical models to reduce computational overhead due to test
generation and fault simulation, yield simulation tools, and mathematical models to
estimate test quality and costs. To demonstrate the effectiveness of this model, results are
presented for CMOS layouts of benchmark circuits and modifications of these layouts.
To Mama and Daddy, for all your love and support
iii
Acknowledgments
I want to thank god for giving me the patience and determination to complete this work.
I would like to thank my advisor Dr. S.F. Midkiff for his invaluable advice and guidance
during my studies at Virginia Tech. His grasp of the area has never failed to amaze me. I
would also like to thank him for painstakingly editing this thesis, often spending evenings
and weekends doing it.
I would also like to thank Dr. J.R. Armstrong and Dr. P.M. Athanas for serving on my
committee, taking the time to review this work and for being such wonderful teachers. I
would also like to thank Dr. B.S. Blanchard, Dr. M. Abrams and Dr. R. Broadwater for
making my stay at Virginia Tech, such a stimulating and rewarding academic experience.
I would like to thank Salah for making available his fault simulator. I would also like to
thank all my friends here at Virginia Tech who made my stay in Blacksburg so enjoyable.
A special thanks to my parents, grandparents and brother for all their love,
encouragement, and support during these difficult years.
iv
Table of Contents
Chapter I. Introduction ................ Lek e
1.1.
1.2.
1.3.
1.4.
Chapter 2
2.1.
2.2.
2.3.
2.4.
2.5.
2.6
2.7
. Background
Motivation
Approach ............2.-. 004000074
Contributions of this Work ..............
Outline of the Thesis ........2....20.2022.
The Systems Approach and Design Evaluation
Physical Design for Testability .........2..
Inductive Fault Analysis... ..........202.
Testing 2... 2 ee ee
2.4.1. The Fault Model ......
2.4.2. Circuit Representation ............
2.4.3. Ippe Testing Ce ee ee ee ee kk ee
2.4.4. Test Generation for Bridging Faults .... .
Statistical Models for Testability Estimation .... .
2.5.1. The Bayesian Model ...........
2.5.2. The Beta Model .. . Dk.
Yield Analysis. ............0..
2.6.1. Analytical Yield Models ...........
* © © «© «¢ +
- 8 e 8
oe es © ee 8 «
* 2 © © © ©
- = © © 8 6
7 8 © © ee «
-_ © © © 8 «6
e 8 © © 8 &
o © #© © © «©
. .
*
o © © © «# «@
es © © © © «©
2.6.2 WVLASIC: Simulation-Based Model and Tool...
Test Qualityand Cost ........... ...0..
2.7.1 Test Quality .
2.7.2. Test Cost ....... Ck ke nk ne ek ee kk ee ne
- © © © @ 6
Chapter 3. The Circuit Cost Quality Model
3.1. Design Method and Evaluation ....... Lo ee ee
3.1.1. Integrated Approach to Circuit Design
3.1.2. Design-Dependent Parameters for Layout Design. . . . .
3.1.3. Cost Quality Model for Evaluation ............
3.1.4. Estimation of the Model Parameters
3.1.4.1. Testability Estimation. ..........
3.1.4.2. Cost Estimation ...............2..
3.2. Supporting Tools ............ 2.0.2... 002020408
Chapter 4. Results ..... Le ee ee
4.1. Undetectability Profiles .. .........
4.2. Yield Analysis ..... 2... 2. ee ee ee ee
4.3. Layout Evaluation Using the Cost Quality Model ........
4.4. Summary ... 2... ee ee ee eee
Chapter 5. Conclusion ... . . Lo ee
5.1. Summary ..... 2... ee ee ee
5.2 Directions for Future Research .......2....
Bibliography © 000
Appendix A. CARAFE and VLASIC Technology Files ..........
Appendix B. Fabrication and Defect Statistics Files ...........2..
Vita
. . 33
33
. 33
36
.. 37
. 38
39
42
48
A8
50
54
63
66
67
66
68
76
78
vi
List of Illustrations
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
IC layout design flow. .. 2... ee ee ee
The systems engineering process applied to IC design.
Inductive fault analysis flow diagram... ..............
Intra-layer bridging fault... 2... 2 2. ee eee
Inter-Layer bridging Fault... 2... 2... ee ee.
Hierarchical circuit representation. . .
Ipnpg test generation suite... 2... 2...
Flowchart for deterministic test pattern generation. .........
Relationships between yield, design, manufacturing process and testing
VLASIC system structure... 2... ee ee ee ee
Block diagram of the testing process showing effect of errors. .
Design parameters in the layout design process. . . . .
Cost quality estimation tool suite... ............20..
Flattening a hierarchical MAGIC circuit... 2... 2.0.2...
Circuit undetectability using the Bayesian model... ........
Circuit undetectability using the Beta model. . . .. .
Undetectability profiles using the entire fault list. . 2... 2...
Undetectability profiles using a random sample of the fault list. .. . .
Undetectability profiles of MCNC layouts... . .
Undetectability profiles of MCNC layouts using the entire fault list.
oe © 8 © 8 © © © © 8 6
« * . .
* 6 © © © #© © 6
vii
List of Tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Cost Model Definitions ............0....2.2....000. AQ
Programs Written for this Research. W. 4
Yield Estimates for MCNC Layouts ................ . 354
CCQ for MCNC Layouts Using the Entire Fault List... . 2... . 56
CCQ for MCNC Layouts Using a Random Sample of the Fault List. 57
Comparison of Circuit Fault Coverage Using Different Estimation
Models... 1... ee 58
Maximum Defect Size in the Fabrication Process. ........ .. 39
CCQ for c17 with Different Layouts and Fabrication Statistics Using the
Entire Fault List. 2... ee 61
CCQ for c17 with Different Layouts and Fabrication Statistics Using a
Random Sample of the Fault List... 2... ee 61
CCQ for c432 with Different Layouts and Fabrication Statistics Using the
Entire Fault List. 2... ee ee ee 62
CCQ for c432 with Different Layouts and Fabrication Statistics Using a
Random Sample of the Fault List... .......2.....0.04. 62
CCQ for c3540 with Different Layouts and Fabrication Statistics Using the
Entire Fault List... 2... ee ee 64
CCQ for 3540 with Different Layouts and Fabrication Statistics Using a
Random Sample of the Fault List... 2... 2... ee 64
Vill
Chapter 1. Introduction
1.1 Motivation
In the competitive integrated circuit (IC) market, an IC vendor has three major objectives:
1. identify a market need,
2. design a chip in the shortest possible time, and
3. ensure that the number of bad chips shipped to the customer is minimized, i.e. ensure
that the chips shipped are of high quality.
In complementary metal oxide semiconductor (CMOS) technology, the minimum feature
size is currently below one micron, so millions of transistors can be integrated on a single
chip. With these high levels of integration, shipping chips with a low defect level requires
consideration of circuit testability, manufacturability, and cost efficiency throughout the
design cycle.
To develop a design that best meets the specifications for functionality, test,
manufacturability, and cost, an iterative process must be carried out. At each iteration, the
design is evaluated to determine the extent to which it meets the specifications. The
detailed design phase consists of two parts: gate-level circuit design and incorporation of
gate-level design for test (DFT) techniques, and layout modification to incorporate
physical design for testability and optimize yield. This research develops a design method,
including an evaluation measure, to be used in the final layout phase of IC design.
Chapter 1. Introduction 1
1.2. Approach
In the life-cycle approach to engineering design, the entire life of the system is considered
from inception [4]. This research applies this approach to IC design. The steps in the IC
product life cycle using the systems approach are:
1. identification of the market need for a particular circuit as a packaged IC,
2. conceptual and preliminary design of the IC,
3. detailed circuit design,
4. production and test of the [C, and
5. consumer use.
To ensure product competitiveness, the number of defective products shipped should be
minimal, i.e. the quality of product test should be high. To ensure high test quality in the
production phase (step 4 above) of the life cycle, the detailed design stage (step 3) must
incorporate techniques that improve testability. These include circuit modification to
incorporate design for testability (DFT) techniques and reduce test costs.
A systems approach, based on [4], to the layout stage in IC design is shown in Figure 1.
The “Design/Modify Layout” block is repeated until the layout meets or exceeds the
required specifications, or it is determined that the specifications cannot be satisfied. To
evaluate and compare alternative designs, an evaluation metric is needed. This research
develops a metric to evaluate between alternative circuit layouts. Computer-aided design
(CAD) tools are used to extract realistic faults and generate tests for those faults. Using
these physically realistic faults ensures that the test patterns generated in the design stage
and used in the production stage detect all, or almost all, of the defects that can occur
during fabrication. This research also investigates statistical methods for testability
estimation to reduce test generation and fault simulation costs.
Chapter 1. Introduction 2
Gate-level
Design
Functional and
Parametric
Requirements
v
Design/Modify
Layout _
Technology Identify Strategic Factors
Evaluate
Layout
Improvement Needed
Acceptable Effectiveness
Final Layout
Figure 1. IC layout design flow.
Chapter 1. Introduction 3
1.3. Contributions of this Work
The contributions of this work include:
development of a concurrent engineering-based design method for IC layout,
development of a layout evaluation measure, the cost quality model, to be used in this
design method,
statistical determination of circuit testability for faults and circuits described at the
switch-level of abstraction, and
adaptation of test quality concepts used at the gate-level to switch-level fault and
circuit models.
1.4. Outline of the Thesis
Chapter 2 discusses the tools and concepts used in this research, including the systems
approach, physical design for testability, inductive fault analysis, switch-level fault models
and test generation for those faults, statistical testability estimation, yield modeling and
test cost and quality. Chapter 3 presents the proposed design method and circuit cost
quality evaluation metric. Chapter 4 presents results for ISCAS °85 benchmark circuits [7]
using the proposed model. Conclusions are provided in Chapter 5.
Chapter 1. Introduction 4
Chapter 2. Background
It is the aim of the IC designer and manufacturer to produce an IC which not only satisfies
all stated functional and parametric requirements, but is also cost-effective to both the
vendor and to the customer. It is with this in mind that the life-cycle complete concurrent
engineering approach to IC design is adopted in this research. Using this systems
approach, IC design is an iterative process as shown in Figure |. Alternative designs are
created, evaluated for functional and cost effectiveness and then the decision to redesign
or accept the present design is made based on the evaluation. This research proposes the
use of physical design for testability principles to modify the design. Physical design for
testability is a technique that can reduce circuit faults or make faults more testable through
layout modifications.
To ensure with near certainty that the product shipped is fault-free, ie. has high test
quality, all the realistic faults that can occur in the circuit should be tested. Prior research
[10,26] has shown that a switch-level circuit model is needed to accurately model the
physically realistic faults in a circuit taking into account the physical layout and the
process fabrication statistics. Using this list of realistic faults, test patterns can be
generated to detect the faults. The tests generated using the list of physically realistic
faults provide high defect coverage and improve the quality of the shipped product.
Realistic fault modeling and test generation result in high test quality, but, CPU time costs
due to this can be high. For large VLSI circuits, fault simulation time and test generation
time would constitute a considerable overhead in the iterative design process proposed.
Chapter 2. Background 5
The use of statistical models is explored in this research to reduce this overhead. The
manufactured product yield, which is a function of the fabrication process and the circuit
layout, is also a significant cost factor considered in this work.
This chapter presents a survey of literature related to research in the systems approach and
design evaluation, physical design for testability, inductive fault analysis, testing, statistical
estimation of circuit testability, yield analysis and test cost and quality.
2.1. The Systems Approach and Design Evaluation
The systems approach to product development considers effectiveness measures and
economic feasibility through the entire life cycle of the product. A flow chart of the
systems engineering process as applied to IC design is shown in Figure 2. In this iterative
process, alternative designs are evaluated against the previous iteration. This evaluation
depends on the design-related parameters. In [C design, physical design for testability
principles can be used to create alternate circuit layouts.
The factors that stand in the way of attaining design objectives are known as limiting
factors [4]. Of these limiting factors, some can be modified to achieve a more optimal
design. These factors are known as the strategic factors. The evaluation function provides
a means of evaluating and comparing design alternatives created by making changes in the
strategic factors. Blanchard and Fabrycky [4] define F as an evaluation measure to choose
between alternatives.
E= f(X,Y,,¥;) (1)
X denotes the controllable decision variables, Y; denotes the design-dependent system
parameters, and Y; denotes the design-independent system parameters. In IC design the
design-dependent parameters include yield, test cost, number of faults, circuit testability
and, thus, test quality. The design-independent parameters include fabrication
Chapter 2. Background 6
Identify Need for IC
|
Evaluate and Test
the IC Design
Compare
Define the IC : Evaluation and Requirements est Data wi
Requirements
and Objectives
Vv
Consider Choose the Best
Alternative Configuration Configurations
Design the
- IC
Manufacture
the IC
y Test the IC
Market the
IC
Figure 2. The systems engineering process applied to IC design (based on [4]).
Chapter 2. Background
process statistics and fixed costs, such as test equipment costs, design personnel costs,
support costs and prototype manufacturing costs.
2.2. Physical Design for Testability
Most current DFT methods employ gate-level circuit additions and modifications to
enhance circuit testability. Gate-level DFT techniques make faults more observable and
controllable. However, even after the incorporation of these techniques, faults may remain
that are difficult to test. Prior research in inductive fault analysis (IFA) led to tools that
extract faults at the layout or the physical level. Using these tools, it is possible to reduce
the number of realistic circuit faults through layout modifications.
Using IFA tools like CARAFE (discussed in Section 2.3), it is possible to generate a list of
all of the possible realistic faults in a circuit. Tests can then be generated for the faults.
Based on the information from fault simulation and test generation, the physical design of
the circuit can be modified to remove faults that are not testable or difficult to test. This
approach to design for testability is known as physical design for testability (P-DFT).
P-DFT criteria include [12]:
1. design the circuit to have fewer faults,
2. make difficult to detect faults easy to detect, and
3. make difficult to detect faults unlikely.
The difficulty of detecting a fault f, Diff; , is
_ all tests that detect f Diff, = Yall possible tests
The difficulty of detecting a fault is affected by whether the fault is a delay fault or a logic
fault. Delay faults are more difficult to detect, hence P-DFT techniques can modify the
Chapter 2. Background 8
circuit so as to decrease the likelihood of a delay fault, even though the likelihood of an
easier to detect logic fault may be increased. Similarly, some logic faults are difficult to
test and can be converted to delay faults to increase the detection probability. The difficult
to detect faults can be made less likely by increasing node spacing and wire spacing for
those wires and nodes which if shorted create difficult to detect faults. P-DFT techniques
modify cell placement, routing and logic selection (drive strength) to make a circuit more
testable.
2.3. Inductive Fault Analysis
To ensure that the test vectors generated detect almost all possible defects, the chosen
fault model should be able to represent the physically realistic defects in the IC. Inductive
fault analysis [10] is a systematic and automatic method for determining which faults are
likely to occur in a specific VLSI circuit. IFA analyzes low-level fault producing
mechanisms, as opposed to using a high-level fault model, and takes into account
fabrication technology, defect statistics, and physical layout. The faults are modeled at the
switch level. The IFA procedure, as described in [10], is shown in Figure 3. As is seen in
the diagram, the inputs are the technology description, the circuit layout and the defect
Statistics.
CARAFE [14,15] is an IFA tool that simulates all possible circuit defects and translates
the generated defects into faults. CARAFE enumerates the realistic bridging faults that can
occur in a circuit as a result of defects and calculates the likelihood of occurrence of each
fault based on the physical layout of the circuit. This likelihood is reported relative
Chapter 2. Background 9
Technology Technology Primitive Fault
Description Analysis Taxonomy
vv
Circuit Layout Layout Data
Layout Parsing Structures
4
Defi cet Defect Defects Statistics ;
Generation
Primitive Primitive
Fault > Fault List
Extraction
Ranked Fault
List
Chapter 2. Background
Figure 3. Inductive fault analysis flow diagram [10].
16
to the likelihood of occurrence of the other faults found. CARAFE recognizes two types
of bridging faults:
1. intra-layer bridging faults, as illustrated in Figure 4, caused by extra conducting
material deposited or not etched between physically adjacent conducting layers, and
2. inter-layer bridging faults, as illustrated in Figure 5, caused by a defect in the insulation
material (oxide layer) between two conducting layers causing a contact to be made.
A bridge is a pair of shorted circuit nodes. A bridge fault within a cell, ie. an intra-cell
bridge fault, can cause a change in the output logic value, an indeterminate logic value at
the output, an increase in the propagation delay for some inputs, or sequential behavior in
a combinational logic cell. To extract the bridging faults, CARAFE uses physical layout
geometry and defect statistics to calculate a sensitive area to determine the likelihood of
occurrence of a fault. The sensitive area, SA, is defined as the area in which the center of a
defect should fall to cause a fault.
SA= I(2r-w)
Here, r is the radius of the defect, w is the spacing between two conducting regions, and /
is the distance for which the two conducting regions are adjacent. Radius r is specified in
the fabrication statistics file, while dimensions / and w are determined by CARAFE. The
likelihood of occurrence of the bridging faults reported by CARAFE depends on the
sensitive area calculation and the probabilities of bridging fault occurrence between the
different layers.
2.4. Testing
One of the objectives of this research 1s evaluation of test quality and cost. The fault
model chosen and the test procedure contribute to both test quality and test cost. This
section discusses the choice of a fault model for test generation for CMOS VLSI circuits,
Chapter 2. Background 11
Conducting Extra
Regions Conducting
Material
Figure 4. [ntra-layer bridging fault.
Conducting
Layer 2
Conducting
Oxide Defect Layer |
Figure 5. Inter-layer bridging fault.
Chapter 2. Background 12
circuit representation and test generation. This section also discusses BODEM [5,6], a
hierarchical switch-level automatic test pattern generation (ATPG) program for CMOS
circuits.
2.4.1. The Fault Model
A fault model is a hypothesis of the fault mechanism present in a circuit [20]. Faults
should model physical defects in a circuit. A single fault may model one or more defects in
the circuit. The stuck-at fault model is a widely accepted fault model and stuck-at fault
coverage is widely used to estimate the defect coverage in an integrated circuit [18]. The
stuck-at fault model is, however, inadequate for test generation for CMOS circuits
because of the different physical structure of the CMOS gate compared to a TTL gate for
which the stuck-at model was developed, different failure mechanisms in CMOS elements,
and the inability to represent CMOS structures such as complex gates and transmission
gates as logical gates |5,20,26,28].
Common CMOS faults include a bridge between two normally unconnected nodes and an
open between two normally connected nodes. Shorts within a gate (intra-gate faults) and
shorts between gates (inter-gate faults) also need to be modeled. The fault types proposed
for the physically occurring failure mechanisms in CMOS circuits are:
e node stuck-at 0 fault,
e node stuck-at 1 fault,
e transistor stuck-off,
e transistor stuck-on,
e general open fault, and
e general bridging fault.
It should be noted that node stuck-at faults and transistor stuck faults are subsets of
general bridging faults. For example, a line stuck-at 0 is equivalent to a short between that
line and ground. A transistor stuck-on is equivalent to a bridge between the
Chapter 2. Background 13
transistor’s drain and source. Research has shown that the use of gate-level circuit models
with the line stuck-at fault model does not accurately model actual defects in a CMOS
circuit [20]. Hence, gate-level circuit representations may not provide a high level of
defect coverage. CARAFE provides a list of physically realistic switch-level bridging faults
for the circuit. This bridging fault model at the switch-level of circuit abstraction has been
chosen for BODEM [5,6] which is the test generation tool used in this research.
2.4.2. Circuit Representation
An important consideration in test generation is circuit representation. Circuits modeled at
the switch level are commonly represented in the form of a graph. For large CMOS
circuits represented as a graph, the memory requirements and computational complexity
pose a formidable problem. Hence, hierarchical techniques have been used in circuit
representation. The graph-based hierarchical circuit representation used in [5] is shown in
Figure 6, At the lowest level in the hierarchy are the interconnected transistors and wires
that are represented by nodes and edges. The next level consists of modules that are
switch-level graphs consisting of connected nodes and edges. Each module has external
nodes that provide an interface between connected modules. These modules lack logical
information, so gate-level information is added to each module. At the highest level, a
network module defines the primary inputs and the observable outputs of a circuit. A
circuit consists of module instances. An instance defines connections between adjacent
modules. Each instantiation requires storage to be allocated only for instance connectivity
and the external nodes of each module. No storage is allocated to the nodes within a
module. This approach conserves memory and reduces computational overhead.
The hierarchical circuit representation developed in [5] uses three types of gates to
provide logical information to the modules:
1. primitive gates which include NAND gates, NOR gates and INVERTERS,
Chapter 2. Background 14
2. complex gates which include AND-OR-INVERT and OR-AND-INVERT, and
3. composite gates which include inverted output AND and OR gates and XOR and
XNOR gates.
Network Module
Module Instances
Nodes and Edges
Figure 6. Hierarchical circuit representation.
2.4.3. Ippa Testing
An important feature of CMOS structures is that in normal operation they consume very
little power. By taking advantage of this low static current characteristic of CMOS,
quiescent power supply current (Ippo) measurement techniques can be effectively used to
detect shorts or bridges in a circuit [2,21]. If the shorted nodes are driven by the test
vector to opposite logic values, then the resulting path due to the short causes a high
quiescent current to flow that can be observed and measured on the power supply bus.
Chapter 2. Background 15
2.4.4. Test Generation for Bridging Faults
BODEM [5,6] is an automatic test pattern generator that performs deterministic test
pattern generation, fault simulation and test set compaction. It assumes Ippg testing and
hierarchical switch-level circuit models. The complete test generation suite is shown in
Figure 7. The circuit layout is described using MAGIC [23]. For switch-level test
generation, switch-level bridging faults are extracted using CARAFE [14,15]. Since
CARAFE flattens a hierarchical circuit, the hierarchical output of the MAGIC circuit
extractor (circuit.ext) file is used.
Using the hierarchical circuit description extracted from MAGIC and a bridging fault list
from CARAFE, bridging fault classification and switch-level module extraction is
performed by CARP (CARAFE Output Processor). CARP filters out untestable bridging
faults due to unused feed-through nodes, combines duplicate faults, adjusts their
occurrence counts, and then re-ranks the fault list. Also, CARP creates a modular,
hierarchical circuit representation in a switch-level description (SDL) language. The
bridging fault list (circuit.bf) file and the switch-level description (circuit.sdl) files are
inputs to BODEM which implements the test generation algorithm based on Ippg testing.
BODEM (Bridge Oriented Decision Making) is so called because it extends PODEM
(Path Oriented Decision Making) for use in Ippo test generation at the switch level.
2.5. Statistical Models for Testability Estimation
Test generation and fault simulation have high execution time and computing resource
costs associated with them. Statistical models can be used to reduce these costs by
estimating circuit testability using only a small sample of the circuit faults. This section
presents two models that can be used to estimate circuit testability and fault coverage: the
Bayesian model [25] and the Beta model [9]. The Beta model provides better estimates of
fault coverage than the Bayesian model [9].
Chapter 2. Background 16
CARAFE
Chapter 2. Background
MAGIC
CARP
BODEM
circ.vectors
Figure 7. Ippg test generation suite [5].
17
To generate a test, a deterministic ATPG program performs the steps shown in Figure 8.
In this method, CPU costs due to test generation and fault stmulation predominate. Circuit
testability is defined as the probability density function of the detection probabilities of the
faults in the circuit. The quality of a test depends on the fault coverage achieved by the
test. Fault coverage itself is a function of circuit testability. The relation between testability
and fault coverage developed by Seth, Agrawal, and Farhat [25] can be used to reduce
fault simulation and test generation costs. The concept of circuit undetectability, which is a
scalar representation of testability is also developed in [25].
2.5.1. The Bayesian Model
The model presented in this section, referred to as the Bayesian model, is due to Seth,
Agrawal, and Farhat [25]. In the Bayesian model, a probabilistic relationship is developed
between testability and fault coverage. Data collected during fault simulation and test
generation is used to estimate testability.
The detection probability of a fault is defined as the probability of detecting the fault with
a random vector. It is represented by a probability distribution with density function p(x).
The mean coverage by a vector is
I
y, = J xp(x)dx
0
It is shown in [25] that the coverage due to n vectors is
y, =1-I(n) (2)
Chapter 2. Background 18
Fault List
Select a Target
Generate a Test
|
.
Perform Fault
Simulation
Is Fault
Coverage High
Enough ?
Done
Figure 8. Flowchart for deterministic test pattern generation.
Chapter 2. Background
where I(n), the undetectability profile of the circuit, is given by
I I(n) = J (1 -x)"p(x)dx (3)
0
Equations (2) and (3) are valid for random test generation. For deterministic test
generation the model assumes that every vector detects at least one new fault not
previously covered, and that a vector may also detect other faults depending on their
detection probability. For deterministic test generation, which is used in this work, the
fault coverage is [25] n
Yn = I= Tn) (4)
To determine p(x) and /(n) experimentally, a set of n, faults is simulated. A fault is
dropped from further consideration by the fault simulator as soon as it is detected. A
random first detection (RFD) variable is associated with each fault. The RED variable
indicates the vector number at which the fault was first randomly detected. Since random
detection is required, the RFD value of a targeted fault in deterministic test generation 1s
not affected by the vector generated. For each vector number i, variable w; represents the
number of faults whose RFD value is 7. The number of faults in the fault set whose RFD
value is not defined is given by
Wy =n, -— Lw, (5)
where N is the number of test vectors. Using Bayesian detection probability, p(x) and /(n)
are given by
p(x) =— Sw,p,(a) 6) Ki. i=0
w(N+D 1X iG+Dw, and [(n) = —————~ OTT
n(n+N4+1) vn, iai(nti)\(nt+i+l) (7)
where p(x) is the fault detection probability for vector i.
Chapter 2. Background 20
2.5.2. The Beta Model
The Beta model is due to Farhat and From [9]. According to the Beta model, the
testability probability function p(x) has the distribution
_ _ r(a+B) ., Bel p(x) = Pd(x) + (1 POT (By (1-x)"") (8)
p(x) = Py 8x) +1 — Py) pg (x) OSxS1,a>0,B >0 (9)
where p(x) is the detection probability distribution of a fault, [’(-) is the gamma function, 6
(x) is the impulse function at x=0, P, is the fraction of aborted and redundant faults in the
circuit, and p,(x) is the beta component of the testability distribution. Testability is
modeled as a function of a discrete impulse function at zero and a continuous beta
distribution. The impulse function is used to model the redundant faults in the circuit.
For the Beta model, the undetectability profile is
I, = 1(n,a,B)
r Tr
r(B)rin+a+B)
where n is the number of vectors. /p(n) can be simplified to obtain
n (n—j+B) I = ]| ——_————— 11 = op (11)
The overall undetectability profile is
I(n) =P, +(1-P, JJ j=i(n— f+at+B)
I(n) =P, + — Fy dy Cn) (12)
Knowing Po and parameters @ and £, the testability profile and the fault coverage can be
obtained. For deterministic fault coverage, the testability parameters are estimated by
applying deterministic tests to a random sample of faults. The following procedure is
adopted to estimate Py for deterministic test pattern generation [9].
Chapter 2. Background 21
1. Generate an initial random sample of the fault list and generate N vectors.
2. Form a different random sample of size n with faults fj,f:,...,.f. and stimulate the NV
vectors using the new sample of faults.
3. Associate with each fault f,, a counter x;, where x; is the number of times out of N that
the fault f; is detected. Let X,, X>,.... X, be the actual detection counts. From the faults
with detection count equal to zero, P, the sum of the redundant and the aborted
faults, is estimated and used as an estimate for Po .
Parameters & and B can be estimated based on the conditional distribution of X;. a and B
can be determined using the moment estimator method or the iterative maximum
likelihood estimator method. In this research the undetectability profile is used as a figure
of merit for a particular layout, so the accuracy provided by the iterative maximum
likelihood estimator is not necessary. The moment estimator method used determines
o and 8, estimates for o and £, respectively, using the following equations.
A NX -X-m, a= => — Nm, -(N-1)X -NX
Nex” —NXm, —~NX° + Xm, B=—— = NXm, -(N-1)X —NX
N is the total number of vectors and
My - $x?) nh, i=]
¥=13x, |
AY
(13)
(14)
These values are substituted into Equation (12) to get 1(n,o..B ), the moment estimate
of I(n,a,B).
Chapter 2. Background 22
2.6. Yield Analysis
Yield is the fraction of parts produced that are free of all process and logic defects. Yield
is, therefore, an important cost factor in IC manufacturing. Yield depends on the process
defect density in the different layers, circuit layout, and circuit packaging. Many analytical
models have been proposed to estimate yield [13,17], some of which are discussed in this
section. Monte Carlo simulation methods are also used in yield estimation [29]. They
accurately model the actual physical phenomena that produce defects, but have high CPU
time overhead and cannot be used for large VLSI circuits. This section discusses VLASIC
[29,30], a yield simulation tool that uses Monte Carlo techniques.
Yield modeling and circuit testing are interrelated. This relation is shown graphically in
Figure 9. Defects in an IC consist of global defects and local defects. The circuit faults
caused by the two kinds of defects are not independent. However, it is generally true that
global defects cause a reduction in the parametric yield, ie. they cause variation in
switching speed and output voltages and currents, while local defects generally affect
topology and cause functional defects. Maly [17] identifies three important features of any
yield model.
1. Fidelity of the model: a measure of how accurately the model describes actual physical
phenomena causing yield losses.
2. Complexity of the model: the CPU time increase caused by an increase in the size of
the IC.
3. Dimensionality of the model: the number of variables that must be identified before the
model can be used.
2.6.1. Analytical Yield Models
Many analytical models have been proposed for yield estimation [13,17]. Some of these
are described in this section.
Chapter 2. Background 23
Characteristics of Contaminants
and Particulants
Process Recipe
Process Instabilities
\ vy Vv
Defect Characteristics
4
% v
r
Faults
IC Geometry + IC Layout
Product Characteristics
Performance
Reliability
‘
Selection of Chips
Y Yield
Figure 9. Relationships between yield, design, manufacturing process and testing [17].
Chapter 2. Background 24
The basic yield equation, based on Poisson statistics, is
Y=e%
where Y is the yield, A is the IC die area, and Dy is the defect density. Moore [19] modeled
IC yield using the formula
A
Y=e
where Ag is the reference area. Based on the assumption that the defect density is
exponentially distributed, Seeds [24] derived the yield formula
y=— 1+ AD,
Okabe [22] proposed a two dimensional yield model based on the negative binomial
distribution,
r Y =( 4+ 1)”
Oo
where Ay = AD, and o is the clustering parameter.
These simple analytical models do not account for the details of the chip layout and use
defect density as a model parameter. They assume that fault density is proportional to
defect density. Thus, these models have low fidelity. The need for improvement arises due
to the need to incorporate defects that can occur in different IC layers. A more recently
proposed analytical model by Kooperberg [16] is more general.
N A,D;P, _ Y=[[d+2—=—)*
i=] j Cc. i
Here j is the ith type of defect, j is the jth module, P; is the probability that defect 7 will
cause a fault in area j, and c; is a constant relating to the density of the ith defect type.
The analytical models presented in this section, with the exception of the one proposed by
Kooperberg, have poor fidelity and low complexity and dimensionality. The model
proposed by Kooperberg has better fidelity than the earlier proposed models; complexity
and dimensionality are also higher than for the simple analytical models.
Chapter 2. Background 25
2.6.2. VLASIC: Simulation-Based Model and Tool
VLASIC (VLSI Layout Simulation for Integrated Circuits) [29,30] is a yield simulator
based on Monte Carlo simulation techniques that uses process technology and defect
Statistics to place random spot defects on a chip layout and determine what circuit faults, if
any, occur. VLASIC has been developed for determining functional yield. The WLASIC
system structure is shown in Figure 10. There are six basic steps:
1. generate as many samples as desired in the simulation,
2. generate and place defects on the layout,
3. analyze the modified layout for circuit faults,
4. filter out faults that do not affect the functional yield and combine faults,
5. output a chip sample containing a list of circuit faults that have occurred, and
6. on completion of simulation for all the samples, generate chip fault lists and the
frequency of occurrence of the faults.
The defects placed by VLASIC on the layout are:
e extra material defects which include shorts created by extra material deposition, new
devices created if extra polysilicon spans active material creating a transistor, and
opens if extra polysilicon breaks an active line in forming a new transistor,
e missing material defects,
¢ oxide pinhole defects, and
e junction leakage defects.
VLASIC uses statistical models for defect size distribution, spatial distribution, radial
distribution and distribution between lots and wafers to place the defects on the chip.
VLASIC has high fidelity, but this fidelity is accompanied by high complexity and
dimensionality.
Chapter 2. Background 26
Pr oes Extracted Defect
Description Layout Statistics
Vv Vv
>) Geometry Random Number Database
Generators
¥
Polygon Sample Loop Package
A
' Fault
»} Combination and Fault Summary Filtering
;
| Vv
. Fault Samples Out _| Analysis
Figure 10. VLASIC system structure [29].
Chapter 2. Background 27
2.7. Test Quality and Cost
Layout effectiveness is a function of the associated test cost and quality. Test cost and
quality are related to each other by the cost quality metric developed in this research. For
a linear increase in circuit complexity, the cost of test increases faster than linearly. Over
the past few years, product cost has decreased even with an increase in circuit complexity.
However, test cost as a percentage of the total product cost has increased considerably
|8]. No fabrication process is perfect, so defective parts are produced. Testing is not
perfect either due to fault redundancy and economic limitations in the testing process.
Therefore, parts that are shipped may contain defects. This section discusses test quality,
test cost, fault coverage, errors in testing, and the resulting economic effects.
2.7.1. Test Quality
Testing in this work refers to Boolean testing which is the process of applying a sequence
of test patterns to a digital device and observing outputs with the objective of determining
whether the device functions correctly [18]. Test cost depends on the cost of test
equipment, the cost of fault simulation and test generation, and the cost for time required
for the actual test application.
Test transparency, TT, is the fraction of the defects not detected by the tests. The
complement of fault coverage is commonly used to estimate test transparency. Test cost
can be reduced if a higher test transparency is allowed, but test quality is reduced by
higher test transparency, so a tradeoff must be achieved between the required test quality
and the allowable test cost.
The process yield, Y, is the fraction of parts produced that are free of defects. It is not
possible to exactly determine this parameter since some defects may not be detected. Yield
Chapter 2. Background 28
can be estimated from the testing process, which gives an indication of the number of
defective parts in a batch.
The product quality level, QL, is the fraction of the good parts among the parts that pass
all tests and are shipped. Normally, manufacturers use a parameter known as the defect
level, DL, which is the complement of the quality level.
DL=1-QL
In the model developed by McCluskey and Buelow [18], Boolean testing is considered;
delay faults and other parametric faults are not considered. The process yield used should
be the Boolean yield, the fraction of parts produced that are free of all Boolean defects.
This model assumes that n point defects are present, each defect occurs with uniform
independent probability, and the test set detects m of the n possible defects. According to
this model
IT =1-" (15) n
It is shown in [18,33] that
QL=y"™ (16)
Hence, the defect level is given by
DL=]-y"™ (17)
Errors in the testing process can affect the defect level and effective yield. Two types of
errors can occur in the testing process. A Type / error occurs with probability @ when a
tester fails a chip that is not defective. A Type fH error occurs with probability B when a
chip is defective, but is not failed by the tester. Figure 11, from [32], shows the testing
process and the associated errors. Probability & is a function of test equipment quality,
while probability B is a function of the test coverage and the yield. The Type II error
probability B is given by [32]
Chapter 2. Background 29
Good
Type [I Errors Manufacturing
Defective
O Type I Errors
Figure 11. Block diagram of the testing process showing effects of errors [32].
yor —y = ——__—_— 18 j-y¥ (18)
The equations developed previously in this section for the defect level assume that the
probability for Type I errors is zero. However, IC manufacturers have found this to be
untrue in practice.
Chips that are failed as a result of testing often contain a number of good chips. Williams
and Hawkins [32] derive a relation for the defect level when there is a Type I error in the
tester. This defect level, denoted as Dlg, is given by
J—y™ DL. = = 19
“ JT-ay™ (19)
The fraction of the good chips among those failed, denoted as DF,, is given by [32]
Chapter 2. Background 30
oY DF, =————_ 20
“ J-yT + gy 20)
The models above are useful in estimating test costs for the producer and the customer,
some of which are discussed in Section 2.7.2
2.7.2. Test Cost
Test cost is an important component of chip cost for three reasons:
1. if a defective chip is not failed, i.e. a chip is insufficiently tested, the customer receives
defective chips which is considered a serious problem,
2. if a chip is tested thoroughly for all possible faults, the test costs can be quite high,
possibly making the chip non-competitive, and
3. if the tester fails good chips, effective yield decreases which again reduces the
competitiveness of the product.
Engineering compromises must be made to reduce test cost and, at the same time,
maintain test quality at the required level.
If n chips are tested, Williams and Hawkins [32] derive test costs for the manufacturer,
Cin, aS
Cm = nk; + nko P(DAF) + nk; P(DAF) + nk; P(D OF)
Cm = nky + nko(¥O" -Y) + nk -YO"") + nksaY (21)
where k; is the cost to test one chip, kz is the cost of a defective chip erroneously passed
by the tester, k; is the cost of a chip that has been failed by the tester and discarded.
P(DOF) is the probability that a defective chip is not failed, P(DAF) is the probability that
a chip is defective and is failed, and P(D MF) is the probability that a good chip is failed.
The first term in Equation (21) is the cost to test the n chips. The second term is the cost
of those defects discovered by the customer when a Type II error occurs. The third term
Chapter 2. Background 31
corresponds to adding value to defective chips that are discarded. The fourth term
corresponds to adding value to good chips that are discarded. These test costs to the
manufacturer and, in extension, to the customer are discussed further in Section 3.1.4.
Chapter 2. Background 32
Chapter 3. The Circuit Cost Quality Model
Determining a circuit layout that meets quality and test cost requirements, as part of the
system design process, requires an evaluation metric. The cost quality model developed in
this work is an evaluation metric that can be used for layout modification during detailed
design. The metric considers realistic faults modeled at the switch level, tests for bridging
faults, Ippg test, and yield. This chapter discusses the concurrent engineering approach to
IC design developed in this work, the evaluation model called the cost quality model, and
the suite of tools that have been integrated and adapted to implement the cost quality
model.
3.1. Design Method and Evaluation
The systems approach to IC design, as shown in Figure 1, is adopted in this work. This
research develops an evaluation measure, the cost quality model, that can be used to make
the redesign decision. This section discusses the design-dependent parameters that
influence the cost quality metric, the model adopted for circuit cost quality evaluation and
mathematical models used to estimate the parameters that influence this evaluation metric.
3.1.1. Integrated Approach to Circuit Design
Given a system concept, IC design consists of preliminary design and detailed design.
Preliminary design involves specifying functional and parametric requirements, identifying
the process technology to be used, and selecting the general design approach. In detailed
design, the circuit is designed in accordance to the specifications determined in preliminary
design. Detailed design includes both gate-level, or logic, design and layout design. Each
of these two stages requires its own design evaluation function. The evaluation function
Chapter 3. The Circuit Cost Quality Model 33
developed in this research is for the circuit layout stage. This research assumes that gate-
level design tradeoffs have been carried out prior to layout design. A flow diagram for
iterative detailed design of the layout, which can be supported by computer-aided design
(CAD) tools, is shown in Figure 12. In this work the “Modify Layout” block incorporates
P-DFT techniques and layout optimization, the “Estimation/Optimization” block estimates
design-dependent parameters given a near optimal test set, and the “Evaluate” block
computes the evaluation metric. The design-dependent parameters are enumerated in
Section 3.1.2.
3.1.2. Design-Dependent Parameters for Layout Design
There are four factors that need to be considered to optimize a design. Strategic
design-dependent parameters are associated with each factor which, if modified, may
change the numeric value of the evaluation measure. A list of design parameters associated
with each factor, as applicable to CMOS VLSI design, is given below. The list is not
exhaustive, but indicates most of the important design parameters. Note that the
parameters are not necessarily independent of each other.
1. Circuit design optimization
e Circuit layout for latchup prevention.
e Choice of metal thickness for wires to prevent metal migration, to keep
propagation delay within bounds for long wires, and to ensure that satisfactory
power and signal voltage levels are presented to each gate.
e Distribution and buffering of clock lines to control clock skew.
e Speed optimization through optimizing load capacitance and the choice of the
supply voltage.
e Optimization of the dissipated power through choice of the supply voltage Vpp,
load capacitance C,, and switching frequency fp.
e Design to prevent degradation due to charge sharing.
e Choice of clocking strategy.
Chapter 3. The Circuit Cost Quality Model 34
Modify
Layout
Evaluate
NY
r
Initial
Layout
‘\ Layout
Vv. Estimation/
Optimization
Figure 12. Design parameters in the layout design process.
Chapter 3. The Circuit Cost Quality Model
2. Circuit design for testability
e Design modifications to increase controllability and observability.
e Choice of DFT technique, including ad-hoc testing, scan-based approach, built-in
self-test, and physical design for testability.
3. Circuit design for manufacturability
e Adapting the design for the fabrication process.
e Optimizing the layout for yield.
4. Design for cost effectiveness
e Life-cycle cost.
The metric developed in this research addresses layout testability, manufacturability, and
cost effectiveness.
3.1.3. Cost Quality Model for Evaluation
The design process of Figure 12 attempts to reduce manufacturing cost through physical
layout modifications that:
e reduce the number of possible circuit faults,
e make difficult to test faults easier to test,
e make difficult to test faults unlikely, and
e optimize the layout to give maximum possible yield for the fabrication process.
This research develops a metric for evaluating the effectiveness of the layout
modifications. Decisions to change the layout or to retain the original or previous “best”
layout are made based on the metric. For the purpose of this research, the term circuit cost
quality (CCQ) is defined as the extent to which a circuit meets the required functional,
testability and manufacturing specifications. The design space in this research is the circuit
layout. That is, by varying the layout, the value of the CCQ metric changes. The metric
depends on three primary factors:
1. circuit testability,
Chapter 3. The Circuit Cost Quality Model 36
2. circuit yield, and
3. number of test vectors.
The form of the evaluation measure, given by Equation (1), is E= f (X,Y,,Y;). In the
proposed model, X corresponds to the number and set of test vectors required for the
target coverage, which can be optimized for a given set of faults for each layout, Y,
includes yield and number of faults, and Y; corresponds to process technology and fixed
costs, such as design personnel costs, support costs and prototype manufacturing costs.
Circuit cost quality is directly proportional to quality level, QL, and inversely proportional
to the test time, fy , since test time is directly proportional to the number of test vectors.
The quality level is given by Equation (16) to be
QL=Y"
The quality level is used in evaluating CCQ to relate circuit testability and yield.
LE CCQ « os (22)
T
Here, ty is the time to apply the test vectors.
3.1.4. Estimation of the Model Parameters
In the cost quality model developed in Section 3.1.3, the three model parameters, yield,
test transparency and the number of vectors (test time) must be determined for each
alternate layout. Also, a cost estimate must be made for the layout. The yield and the
number of test vectors are outputs of the VLASIC yield simulator [29] and the BODEM
test generator [5], respectively. The use of these tools is described in Section 3.2. This
section discusses testability estimation and cost estimation.
Chapter 3. The Circuit Cost Quality Model 37
3.1.4.1. Testability Estimation
In this research, testability is estimated using the circuit undetectability profile based on
the statistical methods described in Section 2.5. The advantages of using such methods to
estimate circuit testability are reduced computation time because the statistical methods
can estimate circuit undetectability using a small sample of the circuit faults. Statistical
methods also provide a figure of merit for the circuit that is accurate in estimating actual
fault coverage [25]. The use of statistical models for testability estimation in the method
proposed in this work is important. The overhead for test generation and fault simulation
at each design iteration would be considerable for large VLSI circuits, thus significantly
increasing the time for each design iteration. This research estimates test transparency
using the approach below that is an adaptation of Equation (4).
IT = I(n)-— if (I(n)-=) >0 Y Y (23)
1T = 0 if(I(n)-—) <0 Y
Here, 7 1s the number of test vectors at which the undetectability, /(n), is calculated and Y
is the total number of faults present in the circuit. The approximation that the test
transparency is zero when the test vectors provide almost complete fault coverage is made
since statistical models underestimate undetectability for Ippo testing of switch-level
bridging faults when the full set of test vectors is used.
The test transparency is calculated using Equation (23) at an arbitrary number of test
vectors which is fixed for a particular circuit. This value is used to calculate CCQ. Two
statistical approaches are used to calculate the undetectability profile: the Bayesian
approach [25] and the Beta method [9]. A comparison between the two approaches for
switch-level circuits is made to evaluate the effectiveness of the techniques for different
layout sizes. The fault coverage obtained using the complement of Equation (23) is also
compared with the standard fault coverage and the weighted circuit fault coverage, WFC,
obtained from BODEM [6]. BODEM calculates WFC as
Chapter 3. The Circuit Cost Quality Model 38
A
dd; L
iL
wy; i=]
where w; is the relative weight of occurrence of fault fi, d; =1 if fault f, is tested and d; =0
otherwise, and nv is the number of faults.
3.1.4.2. Cost Estimation
This section extends the manufacturing cost calculations in [32] to customer costs. The
parameters used are given in Table 1. Consider a process in which n, chips are
manufactured and tested. The total cost to the producer for the chips, CPp, is given by
CPp= Cp +Cr (25)
The cost of product, Cp, includes costs for design personnel, processing wafers, wafer
test, mask preparation, and packaging, and support such as computers, software, and
training. The cost of test, Cr, is given by [32]:
Cr= Care + Cacp + Cecp + Cyrec (26)
Carc 18 the actual cost to test a chip, Cacp is the cost of bad chips discarded, Cacp is the
cost of good chips discarded, Cyrgc is the cost of not failing a bad chip.
The actual cost to test an IC is
Carc = Crs + Cre + C,. (27)
where Crs is the fault simulation cost, Cr; is the test generation cost and C, is the time
cost of the testing process.
Based on [32], Cacp is given by
Caco = VACpX np X P(DOF)
where VACp is the value added cost of the chip and P(DMF) is the probability that the
chip is defective and is failed. VACp is is given by
Chapter 3. The Circuit Cost Quality Model 39
Table 1. Cost Model Definitions
Cost Definition
CPp Total cost to producer for n, chips
Cp Cost of product, including costs for design personnel,
support, processing wafers, wafer test, mask preparation and
packaging
Cr Total cost of test
Cate Actual cost to test a chip
Crs Fault simulation cost
Cro Test generation cost
C,. Time costs of the testing process
Cacp Cost of bad chips discarded
VACp Value added cost of chip to producer
Cocp Cost of good chips discarded
CNFBC Cost of not failing a bad chip
CP Cost of chip to customer
VACc Value added cost of chip to customer
Csm Customer cost of integrating IC in the system
Cst Customer cost of system test
pm Profit margin
VAC, = —(C, +C;) P
Note that the calculation of Cp and Cyr is recursive because it is expressed in terms of Cp
and Cr. P(DOF) is given by
P(DOF) = (1-Y°"™)
where Y is the process yield, and 77 is the test transparency. So, Cgcp can be expressed as
Cacp = VACpX np x(1-Y°"”) (28)
Chapter 3. The Circuit Cost Quality Model 40
Based on [32], Cgcp is given by
Cocp = VACp x P(DOF)
where P(D CF) is the probability that a good chip is failed. Cacp can be written as
| Cocp = VACp X my X YX 0 (29)
where © is the probability of a Type I error in the testing process.
Based on [32], Cyrac 1s given by
Cyrac = VACp x P(DOF )
where P(DCF ) is the probability that a defective chip is not failed. Cyrac can be written
as
Cyrac = VACp X np X (Y""” -Y) (30)
If the customer buys n, chips, the chip cost to the customer, CPc, is given by
CPc = CPp(] + pm) + P(DA F) x VACc
where pm is the profit margin, P(DOF ) is the probability that a defective chip has not
been failed by the manufacturer, and VAC¢ is the value added cost to the customer. VAC¢
given by
VACc = —CP, (1 + pm) + Csm + Cor P
where + cp, (1+ pm) is the purchase price of the IC, Csy is the cost of integrating the P
IC into a system and Csr is the cost of system test. CP- can be expressed as
CP¢ = CPp(1+ pm) + my X VACc x (YO -Y) (31)
A manufacturer aims to keep chip cost, CPp, and the cost to customer, CPc, to a
minimum and, at the same time, earn an acceptable profit margin.
Chapter 3. The Circuit Cost Quality Model 41
3.2. Supporting Tools
The process and tools used to evaluate circuit cost quality are shown in Figure 13. The
integrated tool suite for circuit cost quality estimation consists of two parallel processes,
test generation and yield prediction. The test generation tool suite estimates the test
transparency and the number of test vectors. The yield prediction tool suite estimates the
functional yield.
The following procedure generates the test vectors. The circuit fault list is extracted using
CARAFE [14,15]. In addition to the circuit layout (circuit.mag), CARAFE receives as
input a technology file and a fabrication statistics file. The output of CARAFE is the file
(circuit.pro) listing the possible faults ranked according to their likelihood of occurrence.
The netlist (circuit.ext) is obtained using MAGIC’s [23] circuit extractor. CARP [5]
generates the list of bridging faults (circuit.bf) and the switch-level description file
(circuit.sdl). These two files are used by BODEM to generate the test vectors. Test
transparency is estimated using the circuit undetectability profile determined using both
the Bayesian model and the Beta model. This permits comparison of the two models. To
perform statistical testability estimation, a fault simulator is required. However, the fault
simulator in BODEM is not available from the command line options, so a different fault
simulator SIM [3], has been used with the statistical models. The output of SIM
(circuit.dp) gives the detection probabilities of each of the faults. The fault detection
probability is used by programs MOD_1 and MOD_2 to estimate circuit undetectability
using the Bayesian and Beta methods, respectively. The “Statistical Testability Estimation”
block shown in Figure 13 requires the use of either program MOD_1 or program MOD_2.
The procedure described above calculates test transparency using the entire fault list. To
take advantage of the statistical models, a random sample of faults can be used for test
generation. The program RAN generates a random sample consisting of ten percent of the
Chapter 3. The Circuit Cost Quality Model 42
circuit.mag
PLAT MAGIC CARAFE
circuit_flat.ext
cifext2vl
vitopack
circuit_flat.pack
circuit.tv
4
VLASIC
SIM
circuit. yield
Circuit Cost
Quality < Statistical Testability Estimation
Figure 13. Cost quality estimation tool suite.
Chapter 3. The Circuit Cost Quality Model 43
entire fault list. This percentage chosen is arbitrarily, but it does reduce the fault list
sufficiently to significantly reduce fault simulation and test generation time. Also, ten
percent of the faults provide a good estimate of circuit testability. BODEM generates test
vectors using this reduced fault list. These test vectors are then used with the fault
simulator SIM. To use the Beta model with a random sample of faults, the procedure
described in Section 2.5.2 is used to estimate the undetectability profile and the test
transparency.
To estimate the circuit functional yield, the layout yield stimulator VLASIC [29,30], as
described in Section 2.6, is used. The circuits used in this research are hierarchical, but
vitopack, a program in the VLASIC yield estimation tool set, works only with completely
instantiated or flat circuits. The program FLAT flattens hierarchical circuits created in
MAGIC so that they can be used with VLASIC. The VLASIC tools include the programs
cifext2vl and vltopack which convert MAGIC layouts to packed binary format for use
with VLASIC (circuit_flat.pack). WLASIC estimates yield based on the technology
description, defect statistics, wafer map, and simulation inputs. Using yield estimates from
VLASIC and test transparency from Equation (23), the test quality level is estimated using
Equation (16). Using the test quality level and the time to test, CCQ is estimated using
Equation (22).
The new programs written for this research are listed in Table 2. FLAT flattens a
hierarchical circuit layout in MAGIC. It consists of two programs, whose inputs and
outputs are shown in Figure 14. The file circuit.iol is a list of circuit inputs and outputs
which is used to remove multiple labeling that causes errors during extraction in MAGIC.
MOD_1 implements the Bayesian model. The model inputs and outputs are shown in
Figure 15. The program SIM has been modified to provide the inputs required for
MOD_1. The modified output file of SIM, circuit.dpmod1, is shown in Figure 15. Figure
Chapter 3. The Circuit Cost Quality Model 44
16 shows the inputs required for the Beta model. The program MOD_2 implements the
Beta model.
Using the tool set in Figure 13, the circuit cost quality can be determined. Knowing the IC
yield, test coverage estimate, probability that the tester fails working chips, and the costs
discussed in Section 3.1.4.2, the cost-quality of different layouts can be analytically
estimated. The use of the method and tools is demonstrated for the ISCAS *85 benchmark
circuits in Chapter 4.
Table 2. Programs Written for this Research
PROGRAM FUNCTION
FLAT Flattens a hierarchical circuit description in circuit.mag
format.
UNLABEL Removes all labels from the flat circuit except single
instances of the primary input/output labels.
MOD_1 Implements the Bayesian model of circuit testability
estimation.
MOD_2 Implements the Beta model of circuit testability
estimation.
SIM_MOD Modifies the program SIM [3] to give outputs required
for MOD_1.
TV Creates the test vector file circuit.tv from the output of
BODEM.
Chapter 3. The Circuit Cost Quality Model 45
FLAT ay! UNLABEL circuit_flat.mag
Figure 14. Flattening a hierarchical MAGIC circuit.
circuit.dpmod |
MOD_1
Circuit
Undetectability
Figure 15. Circuit undetectability using the Bayesian model.
Chapter 3. The Circuit Cost Quality Model 46
MOD_2
Circuit
Undetectability
Figure 16. Circuit undetectability using the Beta model.
Chapter 3. The Circuit Cost Quality Model 47
Chapter 4. Results
This research proposes a method for IC layout design based on the systems approach. An
evaluation method for layouts has been proposed as part of this method. This chapter
presents results from experiments on benchmark circuits using this evaluation metric, the
cost quality model. These experiments were carried out using the circuit cost quality
estimation tool suite shown in Figure 13. The circuits used for the experiments are layouts
of the ISCAS ‘85 benchmark combinational circuits [7] created at the Microelectronics
Center of North Carolina (MCNC). The MCNC layouts are hierarchical and use the
standard cell design approach.
4.1. Undetectability Profiles
This section examines the undetectability profiles of the ISCAS ‘85 benchmark circuits
represented at the switch level. The undetectability profiles of the switch-level circuits are
shown in Figures 17 through 20. The undetectability in these graphs is calculated using the
Bayesian approach. Figure 17 plots the undetectability data calculated when test
generation is performed for the entire fault list, while Figure 18 plots the undetectability
data when test generation is carried out using a random sample of ten percent of the
circuit faults. Ten percent of the faults provides a good estimation of circuit testability, as
is seen by comparing Figures 17 and 18. As a measure of circuit testability, the area under
the curve for each circuit is visually estimated for a number of vectors less than an
arbitrarily chosen value. The smaller the area under the curve, the greater the testability.
The same circuit testability observations are made in both graphs. For the layouts of
circuits c5315, c3540, and c1908, if we consider testability at 20 test vectors, c5315 is
more testable than c3540 which in turn is more testable than c1908. These results indicate
Chapter 4. Results 48
0.5
0.45
0.4
0.35 -
0.3 +
0.25 +
0.2 - Unde
tect
abil
ity
I(n)
0.15 5
1 11 21 31 41 51 61 71 81 91 101
Number of Vectors (n)
Figure 17. Undetectability profiles using the entire fault list.
0.5
0.45
0.4
0.35 +
0.3
0.25 -
0.2 -
Unde
tect
abil
ity
I(n)
0.15 -
0.1 +
0.05 - T ——
1 11 21 31 41
Number of Vectors (n)
Figure 18. Undetectability profiles using a random sample of the fault list.
Chapter 4. Results 49
that using a random sample of switch-level faults provides good comparative results while
reducing the computational overhead of full test generation.
Figure 19 shows the undetectability profiles of five other MCNC layouts. Except for
circuit c17, the undetectability profiles of the other circuits are similar. Some layouts may
be only marginally more testable than others. Circuit cl7 is a very small circuit and
behaves differently from the others, as will also be seen in later sections, because statistical
models assume large fault populations. With a small fault list, statistical observations made
using c17 are inaccurate.
As a means of comparison between gate-level circuits using standard logic observation
testing and switch-level circuits using Ippg testing, the undetectability profiles of circuits
62670, c6288 and c7552 are plotted in Figure 20. Seth, et al. [25] plot the same curves for
gate-level circuits. For the switch-level circuits, the undetectability profiles almost overlap.
However, careful comparison shows that c7552 is marginally more testable than c2670.
Circuit c6288 has an undetectability profile that is nearly the same as that of circuit c2670.
These observations are quite different from those for gate-level circuits. In [25], circuit
c6288 was found to be significantly more testable than the other two circuits. Also, c2670
was found to be slightly more testable than c7552. This observation is due to Ippg testing
for physically realistic faults adopted in this research as opposed to the logic observation
testing method with the stuck-at fault model used in [25]. This observation clearly shows
the importance of considering and testing for low-level fault mechanisms while assessing
testability.
4.2. Yield Analysis
Yield is one of the cost factors considered in the cost quality model. This research
considers functional yield. VLASIC is used to generate layout yield estimates. This section
Chapter 4. Results 50
0.5 0.5 e es = 0.4 = 0.4
= 0.3 = 03 § & 3 0.2 ¥ 0.2
o 3 = 0.1 = 0.1
_ 0 - 0 Saenger
1 2 3 4 5 6 7F 8 1 11 21 31
Number of vectors (n) Number of vectors (n)
(a) cl7 (b) c432
0.5 ~ 0.5
= & = 0.4 ~ 0.4
= 0.3 ; = 0.3
8 N 8 3 0.2 N Y 0.2
o ae S
z OTT. 2 01 ~ 0 SSS Serres oa 0
1 11 #21 #31 41 #51) 61 1 11 21 31 41
Number of vectors (n) Number of vectors (n)
(c) c499 (d) c880
0.5
0.4
0.3
0.2
0.1
ee
ie
Sites He SE ee ee
1 #141 #21 #31 «41~=~«51
Undetectability
I(n)
es
Number of vectors (n)
(e) c1355
Figure 19. Undetectability profiles of MCNC layouts.
Chapter 4. Results 51
0.5
0.45 +
0.4 -
0.35
0.3
0.25 -
0.2 -
Unde
tect
abil
ity
I(n)
0.15 4 07552
0.1
0.05 -
0 r F F F T v 7 t T '
1 11 21 31 41 51 61 71 81 91 101
Number of vectors (n)
Figure 20. Undetectability profiles of MCNC layouts using the entire fault list.
describes the simulation parameters used with VLASIC, provides yield estimates for the
MCNC layouts, and discusses limitations of VLASIC.
VLASIC requires a technology file, a defect statistics file, a wafer map file and simulation
control commands as inputs. The scalable CMOS process (SCMOS) technology file used
is given in Appendix A.2. VLASIC considers eighteen different fault types for SCMOS
technology. They are extra first metal, missing first metal, extra active-MF(first metal)
contact, missing active-MF contact, extra poly-MF contact, missing poly-MF contact,
extra poly, missing poly, extra active, missing active, extra second metal, missing second
metal, extra MF-MS (second metal) contact, missing MF-MS contact, poly-MF oxide
pinhole, MF-MS oxide pinhole, gate oxide pinhole, and junction leakage. A sample defect
statistics file used in the simulation is shown in Appendix B.2. The parameters used in the
defect statistics file must be specified for all the defect types and must be in the same order
Chapter 4. Results 52
as the defect types in the process technology file. The parameters for each defect type, as
explained in [30] are listed below.
e Defect density (d): the mean number of defects of that type per square centimeter.
e Lot alpha (/): the between-lot defect clustering coefficient.
e Wafer alpha (w): the between-wafer defect clustering coefficient.
e Zone radius (D): the radius of the wafer inner zone in centimeters.
e Zone probability (S): the fraction of defects that land in the wafer inner zone,
e Diameter peak (p): the diameter at which the defect density is at its maximum, in
centimicrons (overridden by M).
e Diameter file (M): the filename for the binary file describing the discrete defect
diameter distributions. The discrete diameter distribution is generated using the
program makedist that is part of the VLASIC tool suite. The program uses as input a
file that lists the defect diameters in centimicrons and their corresponding weights. An
example input file to makedist is given in Appendix B.3.
e Diameter bias (b): the bias for minimum width and spacing rules in centimicrons.
e Minimum diameter (7): the minimum defect diameter that causes a circuit fault in
centimicrons.
The values used for these parameters are indicated in the defect statistics file in Appendix
B.2. It should be noted that many of these values used are assumed since actual process
data is not available. It is believed that the values are reasonable assumptions for certain
manufacturing environments.
The simulation was carried out with a 1,000-chip sample with one wafer manufactured per
lot. These values were chosen to reduce simulation time. The yield estimates for the
MCNC layouts are presented in Table 3. No values are available for circuits c5315, c6228
and c7552 because the simulations could not run to completion on the workstation used in
this work due to insufficient memory swap space.
Chapter 4. Results §3
Table 3. Yield Estimates for MCNC Layouts
Yield
Circuit Estimate (7%)
cl7 99.8
c432 78.3
c499 59.9
c880 61.6
c1355 A7.2
c1908 53.4
c2670 20.5
63540 16.3
The utility of VLASIC is limited since it has considerable computational and memory
overhead. To use VLASIC with the MAGIC circuit file format, a packed wirelist file has
to be created. The program cifext2v/ that converts a MAGIC file to a VL format layout,
for use by VLASIC, uses a quadratic algorithm that runs slowly on cells with more than a
few hundred transistors [30]. Also large simulations take many hours. For example,
cifext2vl took 15 hours and 9 minutes to create the VL format file on a DECstation
5000/125 workstation for circuit c3540 and the VLASIC simulation for the same circuit
took | hour and 16 minutes. VLASIC uses about 1,750 bytes of storage per transistor, so
for large VLSI circuits memory overhead is considerable. Because of these limitations
yield estimates for the large layouts cannot be obtained in a reasonable time using
VLASIC.
4.3 Layout Evaluation using the Cost Quality Model
This section presents results from experiments that evaluate and compare the MCNC
layouts and modified versions of the MCNC layouts. The experiments demonstrate the
Chapter 4. Results 54
effectiveness of the cost quality model as an evaluation measure in the proposed iterative
design process. These experiments also investigate whether there is any advantage in using
either the Bayesian or the Beta models for calculating the CCQ value, and the effect of
using a random sample of circuit faults for test generation on the evaluation results.
The time required to apply a fixed number of Ippg test vectors is a design-independent
parameter. The results for CCQ are presented in terms of parameter ¢, defined to be the
time required to apply 100 test vectors for Ippg testing.
Table 4 indicates CCQ values for the original MCNC layouts using the entire fault list.
Table 5 presents CCQ values using a random sample of the circuit faults. From a
comparison of the data in each table, one can conclude that the Bayesian and the Beta
models provide almost the same CCQ figure for a particular layout and fault set. It should
be noted that the CCQ values in Tables 4 and 5 are figures of merit for the particular
layout. They cannot be used to compare two different circuits. If one is interested in
comparing two different circuits, then the CCQ calculation should use the circuit
undetectability for both circuits given the same number of test vectors.
Table 6 presents a comparison between the fault coverage estimates for the original
MCNC layouts using the Bayesian model, the Beta model, standard fault coverage and the
weighted fault coverage. It is seen that for full ATPG with the entire fault list, the
statistical methods overestimate the fault coverage when standard fault coverage is high,
i.e. almost 100 percent. Thus, these statistical methods are not accurate predictors of fault
coverage for the maximum number of test vectors. They are, at best, indicators of circuit
testability. This limitation of the statistical models does not necessarily make them
unsuitable for the methodology proposed in this research since the evaluation measure
requires an indication of circuit testability rather than exact circuit testability value.
Statistical models provide nearly exact testability estimation when testability is calculated
Chapter 4. Results 55
- -
- ST00°0
€Z00°0 LOT
85069 7SgLo
- -
- 7600'0
S710'0 ve
LOOVE 88799
- -
- Z100°0
S£00'0 L9
LOLIS CTESo
881 O8I'T
E91 €700'0
$S00°0 8
SLZET Ose
809° 19°
C07 6700'0
7900'0 Z9
85681 OL979
po6'0 ve6'0
yes 9700°0
7S00'0 LOI
8IE8 80619
pel} 08'I
tL 1€90°0
Z810'0 Sg
SOIL coer
Ev’? Ev'7
9°19 100°0
vL00'0 Ip
vSvS 0839
L8S'I L8S'T
6'6S 1L00°0
L600°0 €9
S6ES 6609
8797 679°7
€8L T810°0
9910°0 8
EV87Z Zev
S71 A
8°66 ve0'0
8L0°0 8
ZL Li?
Reg uvisokeg
| (%)
PIAIA Rog
uvisoke g (Od LV
sy[ne.y WIND
G/ODD=O009 Ten5y)
$10199 A, m4)
suIsplig OOD
ISO JO
JOqUINN] UINUITXe/y
$10199 A. [e210],
ye Ayiqeyoojopuy)
SO]
IST] Ne oMU
oy} SuIs_ sNoAe’]
ONOW JOY OOO
‘page
56 Chapter 4. Results
: -
; [T1000
LITO0 vp
9069 cSSL9
- -
v00°0 9900°0
cS 90PE
88799
- -
- 81100
78100 Sc
TLTS SItso
LOC LOC
¢ 9] 7S00°0
80100 ce
BCL OVSeo
CBE I8'¢
S07 LLIO0
C6100 9¢
9681 QOL979
[8°? S87C
ves 7900
91200 Se
ce8 80619
vOV cE V
CLV 97900
S800
€? ITZ
gcelo
88S L8S
9°19 L100
L7t0'0 Li
SVS 0889
css 9o°¢
66S evr0'0
977200 81
OVS 6669
S79 S79
C8L cS0'0
cv0'0 OT
V8~ cope
Cee Ce Ek
8°66 cS'0
TT? 0
¢ L
LT9
Blog uvisakeg
(%) PIPLX
B10g uvIsokeg
S10}99A PolapIsuo)
NII,
G/ODD=O000 Tens)
$1019 A SOL
syne] 000
Iso], JO JoqunN
winuTxey] suis plig
ye Ayiqeyoojopuy)
[e101
ISTT YN
oy} Jo adweg
wopuey e suse)
snoAP] DNOW
10F OOO *S§ FGBL
57 Chapter 4. Results
68°66 £L°66
C00 '00T c6 66
LOT cSSL9
S166 18°66
V8 °86 91
66 ve
88799
88°66 76 66
T0001 L666
L9 STEgo
6S 66 6S 66
76 66 8°66
v8 OVse9
cS 66
[66 £866
89°66 79
QOL9T9
98°66 98°66
cO TOT SL 001
LOT 80619
6'L6 St 86
9V'86 S686
cS SSel9
OOT OOT
[0°001 89 001
Iv 0889
Lt 66 vy 66
Sv 001 61 O0T
£9 6679
6S °86 97 66
1$°66 L966
BE ctp9
OOT OOT
99° LOT c cOl
8 LI9
IBPIOAND IBVIOAOZ)
Bog uvisadegq
|
SI0IOOA |
WNoMD
yne-y ynej
OSPIOA0Z) ‘ysa,
Jo
PoIysIo piepuris
yney porveunis|
TaquinN
S[OPOP UONUIMSY JSIOIG
BUISA VBeIDAOZ
YN
WNoMD Jo
uostredwo, *9
ajquy,
58 Chapter 4. Results
using a random sample of the fault list and an arbitrary number of test vectors that is less
than the maximum number generated. The failure of the statistical models for circuit c17
should be noted. Inflated fault coverage results are seen for cl17 using both the Bayesian
and Beta approaches due to the small circuit size, as noted previously.
In an iterative, concurrent engineering-based approach to layout design, a layout is
created, evaluated and, based on the evaluation, a decision to retain the design or redesign
is made. Experiments were performed to test the utility of the cost quality model in this
design methodology. The circuits used were c17, a small circuit with 6 gates, c432, with
120 gates and c3540, with 1,669 gates. Two different layouts of each of the three circuits
were created by modifying the MCNC layout. Due to the lack of CAD tools for place and
route, only minor modifications were made to the MCNC layout for each of the two
versions created. The modifications included increasing fault likelihood in some standard
cells and decreasing fault likelihood in other standard cells. Fault probability was increased
by bringing two wires closer to each other and by increasing wire thickness. Fault
probability was reduced by moving wires further from each other and by reducing wire
thickness. The faults were extracted by CARAFE using three different fabrication
processes, fab_1, fab_2, and fab_3. The maximum defect size considered in each of these
fabrication processes is summarized in Table 7. Process fab_3 is the “best” process, while
fab_2 is the “worst.” The fabrication statistics file for a sample process (fab_1) is shown in
Appendix B.
Table 7. Maximum Defect Size in the Fabrication Process
Fabrication Maximum Defect size
Process (centimicrons)
fab_1 400
fab_2 800
fab_3 100 Chapter 4. Results 59
Tables 8 and 9 present results for circuit cl7 using the complete fault list and a random
sample of faults, respectively. For c17, it is seen that the model fails completely when
using either the entire fault list or a random sample of the faults. When there is a change in
the layout and/or fabrication process, there is no change in the CCQ value. This failure
occurs due to two reasons.
1. Circuit cl7 is extremely testable with no redundant or untestable faults. Modifying the
layout to the limited extent done in these experiments does not change layout
testability.
2. Circuit cl7 is a very small circuit. As mentioned earlier, statistical models assume large
fault populations and, therefore, are not accurate in calculating the undetectability
profile for small circuits like c17.
Tables 10 and 11 present CCQ values for circuit c432 using the entire fault list and using a
random sample of faults, respectively. For the fab_1 process statistics, it is seen that layout
Version | has a better (higher) CCQ value than layout Version 2. The same observation is
made when using the entire fault list and when using only a random sample of the faults. A
similar observation is made for the fab_3 process statistics. However, for fab_2 process
Statistics, Version 2 is better when using the complete fault list and Version 1 is better
when using a random sample of faults. This discrepancy occurs due to the approximation
made in Equation (23) where it is assumed that
TT =0 if (1(n)-—) <0
Due to this approximation, the CCQ calculation in layout Version 2 with fab_2 process
Statistics 1s affected only by the number of test vectors and not by the quality level. This
error can be corrected by performing the undetectability calculations at a number of
vectors that is less than the maximum number generated by full test generation. In that
case, test transparency is not zero and CCQ depends on the quality level. In this
experiment, the result obtained using the entire fault list is correct, i.e. with the fab_2
process statistics, layout Version 2 is better than layout Version 1.
Chapter 4. Results 60
Cee Cee
8°66 LSLS'0
Cece 0
€ L
€ qey
Cel Cee
6°86 LSSS'0
88E7 0
¢ L
Z qey
Cee CLE
L'66 Ltvs'0
9170
3 L
T qey
7 UOISIOA,
SC SC
8°66 v86I
0 V8LT
0 Vv
L € ej
Sc $c
6°86 89ET
0 yest
0 Vv
6 7 ey
oC SC
L’66 60¢
0 T0@'0
v L
T qey
[ UOISISA,
Blog UvISOAR
(%) platy
Blog uvIsoAeg
$10199 A, syney
Ssao01g okey]
/O0D
SE OOD Tenis Vy)
S10}99 A, SOL
suIsplg |
woreorIqe,y OOD
SOT, AN
ye Aiiqeuicojopug,
| jo
rJaquinyy |
jo iaquiny
IST] Ne]
9y} Jo
ajdwies wopuey
ve ZUIS]
SONSTIEIS UOMPOTIQe]
pue SINOAR'T
WoIdIIC YUM
£19 10}
OOD
*6 FIGVL
CCl CCl
8°66 99700
T890°0 8
89 © ey
CCl CCl
6°86 9970'0
1890°0 8
89 Z ey
al CCl
L’66 8700
‘0890'0 8
89 T qey
C UOISIOA,
SCI CCl
8°66 9700
0L0°0 8
69 € qey
OOT OOT
6°86 STv0'0
vS0°0 OI
C8 7 ey
CCl CCl
L'66 L700
L90°0 8.
69 T qey
[| WOISIOA
Blog ULISOARY
(%) Platz
raeys| uvisoheg
$10199 A, synej
SSID01g ynokey]
ODD
SI ODO Ten9V)
S10190 A, ISO],
sulsplg |
uoneoriqey OOD
SOL Nye
Aiiqeyojopury, |
jo roquinyy
| jo
Joquinn |
ISV'] YN]
aU
oy} BUISE
soNSHeIS UONPOLIQe
pur sINOAeT
WaIDWIG WWM
£19 10]
OOD 8
aAqeVy
61 Chapter 4. Results
97'S 97'S
€'L8 9700
8£0'0 61
617 € qe
96'S 96'S
€°S9 9€70'0
170'0 8T
vee Z
ey L@9L
S89°L VLL
6L0'0 0S0°0
El 6L7
T qey
Z UOISIOA 6678
1€°8 7°88
€9L0°0 6790'0
ZI 6LZ
€ qey 9L8°¢
Z88°S 719
ZES0'0 €0r0'0
LI vee
Z ey 6078
887°8 EBL
8E01'0 1$90'0
ZI 6LZ
T ey
[ WOISI9 A, e10g
UBISOAR (%)
PIOtA BIOg
uvisodeg $10199 A,
syney SSQ90Ig
jnoAe’T]
G/OOD St. ODD
Ten) 810199
SOL SuIsplig
| woreoliqe,y
OOD
SOT A
ye Amiqeiosjepuy,
| joroquiny
| jo
Joquiny
jsI’J JNey
sy} Jo
adwies wopury
ev BuIsE
SONSTIVIg UOTIBOLIQe
pue SINOAR’T
JWOIIFIG YUM
ZEpd IO}
OOO
“IL FABL
STE SET
€°L8 ZL10°0
LS10°0 eV
06L7 € qey
EV’? rr'z
€°S9 S9T0°0
LS10°0 Iv
ZVEE Z Qey
ELVZ pLVZ
ULL SL10°0
yST0'0 OV
0622 T 9ey
Z UOISIO A, 660°C
6607 7'88
ZLI0°0 L9T0'0
OV 06L7Z
€ qey ILUZ
ELV'Z Z'L9
S910°0 cvl0'0
OF ZVEE
Z Ry 6LET
8E'7 €°8L
0810°0 Z910'0
zy 06L7
T qey
| WOISIOA
ays | uvisokeg
| (%)
plaly BI0g
uvIsoAeg $10}99 A,
syne SS9d0Ig]
noe]
32/090 St ODD
TensVv) S10}99A,
SOL suisplig
| uoneorqey
OOD
SOL A
ye Aipiqeyolopuy,
| joroquiny |
jo Joquinyy
TT YN
oMjUy
oy} BUIS
1) SOYSHBIS UOHeoIgey
pue synoAe’] yUotoHiq YUM TEpo
IO} O00
‘OT FAIGBL
62 Chapter 4. Results
Tables 12 and 13 present CCQ values for circuit c3540. In these experiments it is seen that
for the fab_1 process statistics, layout Version 1 is better, i.e. it has a higher CCQ value
when using either the complete fault list or a random sample of faults. It is also seen that
layout Version 2 is better when using the fab_3 process statistics. This observation holds
when using either the full or random fault list.
IC life-cycle cost considerations also need to be taken into account before a decision to
manufacture is made. Section 3.1.4.2 presented cost calculations to be considered. Due to
the lack of actual cost estimates, this research does not calculate life-cycle costs to the
manufacturer or the customer. However, if such data was available, the costs could be
calculated directly using the equations in Section 3.1.4.2 and the results given above.
4.4. Summary
From the experiments, it is seen that the CCQ value obtained using the Bayesian approach
and the Beta model are almost the same. There is no significant advantage to be gained
from adopting either particular statistical model for evaluating CCQ. It is also seen that
the evaluation decision using test generation with a random fault sample is the same as it is
when the entire fault list is used, except for circuit c17. There is a cost advantage in using
statistical models with a small random sample of the fault list rather than full test
generation for all the faults. The results also show that due to the approximations made in
the adopted approach, inaccuracies can occur in the comparison between alternate layouts
when /(n), the undetectability, is estimated at the maximum number of test vectors, N,
generated. CCQ estimation should be carried out with n < N, Le. at an arbitrarily selected
number of test vectors less than the maximum number generated by the test generator.
Most importantly, it was seen that the cost quality model proposed is an effective
evaluation measure for medium and large circuits. Layout modifications lead to different
Chapter 4. Results 63
‘payuasoid are
sy]Nsai OU
OS ‘QPS Ed
INOIIO Joy
sousHes ssado1d
7 qey
oy JOJ
STE} ATVUVO
|
£9°C 9°?
BE 71100
Se10°0 Be
LOET € qey
L@ Le?
6LT eC10
0 cvlO'0
Le LOET
T qey
C UOISIOA
SC SC
L'6e SOT0'0
8c100 OV
LOE? € qey
ScOE COE
C6
éSTO0 £9100
ce LOET
T qey
[ UOISIOA
Blog uvisadeg
(%) PIar
B10q uvIsoAeg
$10}99A, syne
SS3901g inode]
/ODD St OOO
Temsy) S10199A,
ISO], susplig
| uoreorqes
00D
SOL Nye
Aiiqeioajepug, |
joroquinNy |
jo Joquinyy
Ast] yne{
yi Jo
adureg wopuey
e SuIsr
Sorstielg WOTeOLIQe,;
pue SINOAL'T
JUDIDFIC YUM
OpSEd OJ
OOD
“ET PBL
87721 Lye
lt BE
€v00°0 9S00°0
08 L90ET
€ ey
Lye | Src
6LI vv00'°0
9600°0 08
L90CT T
ey ¢ UOISIS A
SLI SLIT
L6t 9700°0
€S00°0 c8
L90ET € qey
6L¢ 1
LL7T c'6l
0S00°0 LS00°0
8L L90ET
T ey
[ UOISIOA
Blog uevisoseq
|
(%) PIX
e10g uvisodeg
SI0}99 A, syne
“$S99001g ynoAe7y]
G/ODD
SE ODO Ten1V)
$10}09 A, OL
sulspug |
woreoLqe,y OOD
SOL Aye
AIpqeioajopuy, |
jo roquinyy
| jo
1oquiny
ASV] yNey
WU
oy) Susy)
SONSTIBIg WorVoliqe,]
pue SINOART
JOJO
YIM OpEd
10} ODD
“ZI alae
Chapter 4. Results
CCQ values. Using the CCQ metric, a redesign decision can be made in the iterative IC
design process proposed in this research.
Chapter 4. Results 65
Chapter 5. Conclusion
3.1. Summary
This research applied the systems approach to product development to integrated circuit
design. The systems approach considers functional and cost effectiveness in every stage of
the IC life cycle. This research focused on circuit layout in the detailed design stage. The
proposed design method iterates on layout changes to create alternative layouts. It
attempts to improve the layout in each iteration based on physical design for testability
principles. The new alternative is evaluated and compared to the previous baseline layout
based on controllable decision variables, design-dependent parameters and
design-independent parameters. A mathematical model is required to perform this
evaluation. This research developed an evaluation measure, circuit cost quality (CCQ).
The controllable decision variable in the model is the number of test vectors required to
achieve the target fault coverage. The design-dependent variables include the number of
faults and the yield. The design-independent variables are the fabrication process and fixed
cost factors. In developing this model, this research extends known techniques to estimate
test quality and testability for gate-level circuits to switch-level circuits. To provide the
best possible product quality, the method uses inductive fault analysis techniques to
produce a list of physically realistic faults at the switch-level of circuit abstraction, test
generation tools for Ippo test of the set of switch-level bridging faults, statistical models
for estimating circuit testability to reduce overhead, a layout yield estimation tool and test
quality and cost evaluation metrics.
Chapter 5. Conclusion 66
Experiments were performed using layouts of the ISCAS °85 benchmark circuits to
evaluate the utility of the cost quality model. Important findings are listed below.
e The cost quality model is an effective measure that can be used to obtain a figure of
merit for layouts of medium and large circuits.
e Gate-level testability differs from switch-level testability using Ippg test, as is seen by
comparing gate-level circuit testability and switch-level circuit testability for the same
circuits. Switch-level testability and Ippg test must be taken into consideration to
maximize the quality of shipped ICs.
e There is no significant advantage to be gained from adopting either the Bayesian or
Beta statistical models for use in the CCQ metric.
e Use of the statistical models reduces design time without adversely affecting the utility
of the evaluation. The CCQ values obtained using the statistical models with a random
sample of the fault list provides the same decisions based on layout evaluation as those
obtained using the entire fault list.
5.2. Directions for Future Research
There are several topics for further research that are a direct extension of this work. A
Statistical approach that shows greater fidelity in coverage prediction when using a switch-
level bridging fault model with Ippo testing could be investigated. The development of
CAD tools to support the concurrent engineering-based IC design process proposed in
this work is another area for future research. This would include the development of a tool
set to automatically modify layout based on P-DFT principles and the evaluation
performed using the cost quality model. Another suggestion for research is the extension
of the CCQ metric to incorporate more design-dependent parameters that can be modified
to improve the design.
Chapter 5. Conclusion 67
Bibliography
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
M. Abramovici, M.A. Breuer and A.D. Friedman, Digital Systems Testing and
Testable Design, Computer Science Press, New York, NY, 1990.
J.M. Acken, “Testing for Bridging Faults (Shorts) in CMOS Circuits,” Design
Automation Conference, 1983, pp. 717-718.
S. Almajdoub, private communications, May 1994.
B.S. Blanchard and W.J. Fabrycky, Systems Engineering and Analysis, Second
Edition, Prentice Hall, Englewood Cliffs, NJ, 1990.
S.W. Bollinger, “Hierarchical Test Generation for CMOS Circuits,” Ph.D.
Dissertation, Virginia Polytechnic Institute and State University, 1992.
S.W. Bollinger and S.F. Midkiff, “Test Generation for Ipng Testing of Bridging
Faults in CMOS Circuits,” [EEE Transactions on Computer-Aided Design, to
appear.
F, Brglez and H. Fujiwara, “A Neural Netlist of 10 Combinational Benchmark
Circuits and a Target Translator in Fortran,” /nternational Symposium on Circuits
and Systems, 1985, pp. 695-698.
I.D. Dear, C. Dislis, A.P. Ambler and J. Dick, “Economic Effects in Design and
Test,” [EEE Design and Test of Computers, vol. 8, no. 4, pp. 64-77, December
1991.
H. Farhat and S.G. From, “A Beta Model for Estimating the Testability and
Coverage Distributions of a VLSI Circuit,’ JEEE Transactions on
Computer-Aided Design, vol. 12, no. 4, pp. 550-554, April 1993.
Bibliography 68
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
F.J. Ferguson and J. Shen, “A CMOS Fault Extractor for Inductive Fault
Analysis, EEE Transactions on Computer-Aided Design, vol. 7, no. 11,
pp.1181-1194, November 1988.
F.J. Ferguson and T. Larrabee, “Test Pattern Generation for Realistic Bridge
Faults in CMOS ICs,” [nternational Test Conference, 1991, pp. 492-499.
F.J. Ferguson, “Physical Design for Testability for Bridges in CMOS Circuits,”
VLSI Test Symposium, 1993, pp. 290-295.
A.V. Ferris-Prabhu, /ntroduction to Semiconductor Device Yield Modeling,
Artech House, Inc., Norwood, MA, 1992.
A. Jee, “Carafe User’s Manual Alpha.3 Release,” University of California at Santa
Cruz, June 1992.
A. Jee and F. J. Ferguson, “Carafe: An Inductive Fault Analysis Tool for CMOS
VLSI Circuits,” VLST Test Symposium, 1993, pp. 92-98.
C. Kooperburg, “Circuit Layout and Yield,” JEEE Journal of Solid State Circuits,
vol. 23, no. 4, pp. 887-892, August 1988.
W. Maly, “Yield Models - Comparative Study,” edited by C.H. Stapper, et al.,
Defect and Fault Tolerance in VLSI Systems, vol. 2, Plenum Press, New York,
NY, 1990.
E.J. McCluskey and F. Buelow, “IC Quality and Test Transparency,” /nternational
Test Conference, 1988, pp. 295-301.
G. Moore, “What Level of LSI is Best for You?,” Electronics, vol. 43, no. 4, pp.
126-130, February 1970.
V.N. Nickel, “VLSI - The Inadequacy of the Stuck-At Fault Model,” [EEE Test
Conference, 1980, pp. 378-381.
P. Nigh and W. Maly, “Test Generation for Current Testing,” European Test
Conference, 1989, pp. 194-200.
T. Okabe, et al., “Analysis on Yield of Integrated Circuits and a New Expression
for the Yield,” Electrical Engineering in Japan, vol. 92, pp. 135-141, December
1972.
Bibliography 69
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
J.K. Ousterhout, et al., “The Magic VLSI Layout System,” JEEE Design and Test
of Computers, vol. 2, no. 1, pp. 19-30, January 1985.
R.B. Seeds, “Yield and Cost Analysis of Bipolar LSI,” /EEE International
Electron Devices Meeting, p. 12, October 1967.
S.C. Seth, V.D. Agrawal, and H. Farhat, “A Statistical Theory for Digital Circuit
Testability,” JEEE Transactions on Computers, vol. 39, no. 4, pp. 582-586, April
1990.
J.P. Shen, W. Maly, and F.J. Ferguson, “Inductive Fault Analysis of MOS
Integrated Circuits,” JEEE Design and Test of Computers, vol. 2, no. 6, pp. 13-26,
December 1985.
P. Varma, A.P. Ambler and K. Baker, “An Analysis of the Economics of Self
Test,” International Test Conference, 1984, pp. 20-30.
R.L. Wadsack, “Fault Modeling and Logic Simulation of CMOS and MOS
Integrated Circuits,” Bell System Technical Journal, vol. 57, no. 3, pp. 1449-
1473, May-June 1978.
D.M.H. Walker, Yield Simulation for Integrated Circuits, Kluwer Academic
Publishers, Boston, MA, 1987.
D.M.H. Walker, “VLASIC System User Manual Release 1.3,” SRC-CMU
Research Center for Computer-Aided Design, Department of Electrical and
Computer Engineering, Carnegie Mellon University, August 1990.
N. Weste and K. Eshraghian, Principles of CMOS VLSI Design: A Systems
Perspective, Second Edition, Addison-Wesley Publishing Company, Reading, MA,
1993.
R.H. Williams and C.F. Hawkins, “Errors in Testing,” Jnternational Test
Conference, 1990, pp. 1018-1027.
T.W. Williams and N.C. Brown, “Defect Level as a Function of Fault Coverage,”
IEEE Transactions on Computers, vol. C-30, no. 12, pp. 987-988, December
1981.
Bibliography 70
Appendix A. CARAFE and VLASIC Technology Files
The SCMOS technology files used with CARAFE and VLASIC are presented here.
A.Il. CARAFE Technology File
# This is the tech file for the mene cells
tech
semos
end
planes trans
metall
metal2
oxide
end
types
trans polysilicon trans ndiffusion
trans pdiffusion trans ntransistor
trans ptransistor
trans nwell
trans pwell metall metall
metal2 metal2
oxide checkpaint end
contact
polycontact polysilicon metall ndcontact metall ndiffusion
pdcontact metall pdiffusion m2contact metall metal2
psubstratepcontact metall pwell nsubstratencontact metall nwell
end
connect
polysilicon ntransistor polysilicon ptransistor
end
compose
Appendix A
trans ntransistor ndiffusion, polysilicon trans ptransistor polysilicon, pdiffusion
end
# since this is for magic file only, there are no calma numbers
calma
end
extract
fet on ntransistor GND! _ ndiffusion
fet p_ ptransistor GND! pdiffusion end
route
trans polysilicon,ntransistor,ptransistor,pdiffusion,ndiffusion metall metall
metal2 metal2
end
bridge polysilicon metal] metall metal2
ndiffusion metall
pdiffusion metal1 end
fault
bridge n 200 4000 1
break p 200 4000 1 end
color polysilicon Red pdiffusion Gold ndiffusion Green
pwell LimeGreen nwell Orchid
ntransistor FireBrick
ptransistor Khaki
metall Blue
metal2 Violet
end
A.2. VLASIC Technology File
* Technology file syntax is: * comment - line starting with * * input - line starting with keyword, lines of stuff, then end
* Technology file for double-metal P, N, or twin-well scaleable CMOS. * Contacts on top of channel are illegal
* Process is self-aligned so active intersect poly form channel regions. * Extra contacts are assumed not to occur.
Appendix A 72
* Extra/missing select implants, wells are not included. * Cifext2vl and ENTICE make NX = CAA and CPG, and makes CAA = CAA - CPG, * i.e. diffusion regions,
inputlayers CWN CWP CMS CMF CPG CAA CVA CCA CCP CSN CSP COG XP NX end * what Magic plane 0-N each conducting layer lies in * planes 0-5 are used by Magic V6, 0-2 by Magic V4 * <layername> <plane number> planes
CAA 6 CPG 6 CMF 7 CMS 8 * CWN 9 * CWP 9 * COG 10 end * layer combinations separated by one oxide layer * the bottom and top layers must be previously defined * <overlapname> <botlayer> <toplayer> overlap
* this only inserts values into gen, gennet arrays, which are overwritten by * generatedlayers commands AAPG CAA CPG PGMF CPG CMF MFMS CMF CMS end* layers that are not input layers are generated layers * the two source layers must be previously defined * <srel> <src2> <result> <deletel> <delete2> <proc> <merge> <warn> <net1> <net2> generatedlayers * really a NOOP, but included since some circuit extractors do not provide * transistor channels on the NX layer
* overwrites AAPG overlap definition AAPG AAPG AAPG False False NULL False False L2N1 L1N1 end* complete and incomplete via layer stackings * <vianame> <bottomlayer> <vialayer> <toplayer> <bvincomplete> <vtincomplete> via
AACAMF CAA CCA CMF NULL NULL PGCPMF CPG CCP CMF NULL NULL MFVAMS CMF CVA CMS NULL NULL end* All layer combinations that can contain a transistor source/drain
Appendix A 73
* terminal net number. * Used by FollowNet in fault.c when determining transistors hooked to a net. * <layername> sourcedrain CAA end * All layer combinations that can contain a transistor gate terminal * net number. Used by FollowNet in fault.c when determining transistors * hooked to a net. * should infer DP, PNB is special case. * <layername> gate
CPG AAPG end * what via layers electrically connect to what other layers * <layerl> <layer2> * Jayer2 is connected to layer1, this is not necessarily symmetric
viaconnect
end * what conducting layers electrically connect to what other layers * <layerl> <layer2> * layer2 is connected to layer1, this is not necessarily symmetric
layerconnect end * defect definitions * <defectname> <extra/missing/pinhole type> <layer it occurs on> <printname> defects POSMF + CMF Extra First Metal NEGME - NULL Missing First Metal POSCA + CCA Extra Active-MF Contact NEGCA - NULL Missing Active-MF Contact POSCP + CCP Extra Poly-MF Contact NEGCP - NULL Missing Poly-MF Contact POSPG + CPG Extra Poly NEGPG - NULL Missing Poly POSAA + CAA Extra Active NEGAA - NULL Missing Active POSMS + CMS Extra Second Metal NEGMS - NULL Missing Second Metal POSVA + CVA Extra MF-MS Contact
NEGVA - NULL Missing MF-MS Contact PIN1 p NULL Poly-MF Oxide Pinhole
PIN2 p NULL MF-MS Oxide Pinhole PING p NULL Gate Oxide Pinhole PINJ p NULL Junction Leakage end* layer combinations that interact with the defect for each fault type * could infer this using layer stackings
* <defectname> <faultname> <layername> * all layers must be previously defined
* temporarily split OPEN into SPAN and OPENVIA, and add NEWVIA with SHORT * NEGCA, NEGCP, NEGVA assumed not to occur.
* Some fault analysis routines may waste time by merging the active and * channel regions, assuming active == CAA. interacting POSMF SHORT CMF
Appendix A 74
NEGMF SPAN CMF NEGMF OPENVIA AACAMF NEGMF OPENVIA PGCPMF NEGCA OPENVIA AACAMF NEGCP OPENVIA PGCPMF * unused - SD is wired in? POSPG NEWGD CAA POSPG SPAN CAA POSPG OPENVIA AACAMF POSPG SHORT CPG POSPG SHORT AACAMF * unused - SD is wired in? NEGPG SHORTD CAA NEGPG SPAN CPG
NEGPG OPENVIA PGCPMF * unused - POLYSILICON is wired in? POSAA NEWSDD CPG POSAA SHORT CAA NEGAA OPEND CPG NEGAA SPAN CAA NEGAA OPENVIA AACAMF POSMS SHORT CMS NEGMS SPAN CMS NEGMS OPENVIA MFVAMS NEGVA OPENVIA MFVAMS PIN1 NEWVIA PGMF PIN2 NEWVIA MFMS PING NEWVIA AAPG PINJ NEWVIA CAA end* layer that masks a defect for a fault type * should be determined from process flow description * Since POSAA is on the CAA layer and AAPG is a transistor channel * then CPG splits POSAA. * <defectname> <faultname> <layername> mask POSAA SHORT CPG
end * layer stackings with special meanings for transistors * <SD/GATE/POLYSILICON> <layername> * all layers must be defined * Cifext2vl assumes that SD and POLYSILICON are input layers. ReadTechnology * enforces this. speciallayers SD CAA GATE AAPG POLYSILICON CPG end * random integer values
* <name> <value> ints MAXDEFDIAM 1800 end
Appendix A 75
Appendix B. Fabrication and Defect Statistics Files
This section presents the fabrication and defect statistics files used with CARAFE and
VLASIC for the three fabrication processes. The maximum defect size for each process,
fab_1, fab_2, and fab_3, is shown in Table 7. The files for each of the processes are similar
to the ones shown here for fabrication process 1 (fab_1). This section also presents an
example discrete distribution file used by the program makedist.
B.1. CARAFE Fabrication Statistics File (fab_1)
# fab file for mene cells
fab
scmos end
types
polysilicon ndiffusion
pdiffusion ntransistor
ptransistor
nwell
pwell
metall metal2
polycontact ndcontact pdcontact m2contact
end
radius
400
end
bridge 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Appendix B 76
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
end
break
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
end
B.2. VLASIC Defect Statistics File (fab_ 1)
-d 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 1050.5 0.50.5 0.50.5 0.5 0.5 0.50.50.50.5 0.50.5 0.50.5 0.5 0.5 -w 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 -p 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 -b 50 50 0 50 0 50 50 50 50 50 50 50 050 0 0 0 0 -r 300 300 300 300 300 300 150 300 150 300 300 300 300 300 300 300 300 150 D555 55 5555555 5 55 55 5 5 Sti 2121212212222212232133122 -M df_n1i_b df_n1_b NULL df_ni_b NULL df_n1_b df_n1_b df_ni_b df_n1_b df_n1_b df_n1_b df_n1_b NULL df_n1_b NULL NULL NULL NULL
B.3. Discrete Diameter Distribution
This file is an input to the program makedist to generate the binary discrete diameter
distribution file (df_n1 in fab_1).
9 0400 1.0000 0490 0.3000 0540 0.2000 0590 0.1500 0640 0.1200 0840 0.1000 1040 0.0800 1440 0.0100 1840 0.0000
Appendix B 77
Vita
Sandeep Deshpande was born in Bombay, India. He attended Bombay Scottish School,
from where he graduated in March 1986. From June 1986 to June 1988 he attended the
D.G. Ruparel Junior College, Bombay. In the Higher Secondary Certificate examination,
1988, he was placed first in mathematics in the state of Maharashtra. From July 1988 to
July 1992 he studied electronics engineering at the Victoria Jubilee Technical Institute
(VJTI), University of Bombay. He graduated from VJTT in July 1992 with a bachelors
degree in electronics engineering with a first class (honors). From August 1992 to
September 1994 he attended the Virginia Polytechnic Institute and State University from
where he obtained a masters degree in electrical engineering in October 1994. Sandeep is a
member of Phi Kappa Phi honor society. His other interests include swimming, writing
poetry and reading.
Vita 78