a new 650v ganfast half bridge ic for ac/dc converter
TRANSCRIPT
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A New 650V GaNFast Half Bridge ICfor AC/DC Converter Applications
Santosh Sharma, Kedar Patel and Marco Giandalia
1IS-1121
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Outline• Background
• GaN on Silicon• Power ICs in GaN• Navitas IC platform
• Navitas Half-Bridge IC• Why Half-Bridge IC?• Half Bridge Architecture
• Key Features & Performance
• Application examples• Active Clamp Flyback (ACF) Topology
• Summary2
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GaN Material PropertiesGaN Material Properties compared to Si and SiC Theoretical specific RDS / VDS curves
Maximum Voltage (V)
R DS(O
N)(m
Ω-c
m2 )
Vertical SiCurrent Performance Lateral GaN
Current Performance
Lateral GaN 2-D Limit(with 400 ohm-sq 2-DEG)
2.5 MV/cm, 3.5 MV/cm
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GaN Advantage for Offline Applications
Advantages of Lateral GaN on Si Technology
• AlGaN/GaN heterojunction enables high 2DEG concentration and lateral electron mobility under channel and drift region Low specific Rdson
• 10x higher breakdown field High breakdown voltage• Absence of junctions low QG/QOSS /Qrr
• Lateral device structure Easy to integrate different flavors of active components (eMode/dMode/Schottky) and passives with different voltage handling capabilities & good isolation
• Integration on Silicon substrate means , low cost Silicon fabs can be used
Sub
Source
Gate
Drain
Channel Drift region
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eMode vs dMode GaN
dMode GaN Technology
• Depletion mode GaN with Silicon FET Cascode• Silicon FET gate easy to drive
• Complicated multi chip package• Prone to oscillations and instability• No dV/dt control
eMode GaN Technology
• Low QG
• Easy to package and low package inductance
• Good dv/dt control with gate access• No reverse recovery loss• Requires careful gate voltage control
eMode GaN FET gates can be easily damaged by voltage or current spikes Integrated Gate Control offers the most promise in terms of realizing the full potential of eMode GaN
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Navitas IC Platform
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• Hysteretic Digital input• Wide operating power supply range (10V – 30V)• Regulated internal power supply• Integrated Bootstrap• Integrated level shifters• Protection
• UVLO• ESD• Shoot-through
• Monolithic GaN integration
First & Fastest Integrated GaN Gate DriversNavitas GaN IC PDK• Sets up physical and electrical constraints for IC design in GaN• Offers great deal of design flexibility• Fast design/tape out cycle time• Enables seamless integration of new devices and features• Scalable models, streamlined for voltage, process corners and
temperatureNavitas Proprietary GaN devices and circuit elements
• eMode and dMode transistors • Integrated capacitors• Integrated resistors• Inverters• Buffers• Logic gates• Pulse generators• ESD I/O circuits
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Navitas Integrated Drive SolutionDriver challenges addressed by Navitas power ICs:
• Eliminates gate voltage oscillations• Excellent Miller immunity (>150V/ns)• Well regulated gate drive voltage• Extremely low turn off losses• Gate ESD protection• Externally programmable dv/dt control for EMI/noise reduction• Extremely fast turn on and turn off speeds (<5ns)• Clean HV switching characteristics• Fast chip startup capability• Low standby power losses• Safe power up and power down• Low cost/low PCB real estate and PCB layout insensitive
Discrete Driver & Discrete FET
VGS
2 V Overshoot
4V Undershoot
GaN Power ICVGS
50 ns/div
VPWM(2 V/div)
VDRAIN(100 V/div)
Clean HV Hard Switching
~100 V/ns dV/dt
500 V
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Outline• Background
• GaN on Silicon• Power ICs in GaN• Navitas IC platform
• Navitas Half-Bridge IC• Why Half-Bridge IC?• Half Bridge Architecture
• Key Features & Performance
• Application examples• Active Clamp Flyback (ACF) Topology
• Summary8
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Half-Bridge Level-Shifter Options
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Conventional Si JI based level shifters • High junction capacitances• Very Lossy• Unsuitable for high frequency
switching applications
High Frequency Isolators• Capacitive and Inductive coupled isolators• Multiple die structures using capacitor plates or magnetic coils • Use disparate materials • Low power consumption but very costly fabrication and assembly process
TechnologyLateral 650V GaN-on-Si
Next Gen
Logical Extension
Fully Integrated Half Bridge Drivers• Leverages low RDS/QG/COSS & high VDS GaN for HV level shifting
• Level shifters can be made extremely small and fast• Very low current resulting in low power loss• High common mode noise immunity• Pulsed level shifting
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Half-Bridge GaN Power IC
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• Combination of extremely fast low-power consumptive level shifters, Zero QRR/low RDSbootstrap FET, integrated gate drive + power stage enables multi MHz operation with short propagation delays and low system losses!!!
• Integrating drivers, level-shifters, bootstrap FET and power FETs in a monolithic package reduces PCB footprint
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Half-Bridge GaN Power IC• 2x GaN FETs (High side and Low side) & 2x GaN drivers
• Gate voltage regulation
• Hysteretic digital inputs
• Compatible with a wide range of analog and digital controllers
• Integrated high voltage bootstrap FET for fast bootstrap capacitor charging capable of high frequency operation
• Level-shift circuit; low loss/fast and >200V/ns CM noise immunity
• UVLO for safe startup and shut down
• ESD protection
• Shoot-through protection (non overlapping logic)
• Chip enable function for low loss standby mode operation
116 x 8 mm QFN
Exte
rnal
pow
er s
uppl
y(1
0V –
30V)
Chip
EN
B pi
n(<
30V)
High side Bootstrapped supply (10V – 30V)
Low side FET control
High
side
FET
con
trol
HS FETLS FET
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Half-Bridge Startup
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Chip Startup Sequence
Iqcc
(sta
ndby
) (A)
100u
200u
300u
5 10 15 20 25 30
Vcc (V)
Measured Standby Current
VCC
tDZL
t
6.2V
t
UVLOMode UVLO
ModeNormal Operating Mode
15V
6V
t
6.2V Slow capacitor discharge
6V
t
t
6V
tdischarge
Critical Spec: Low-side Needs to be ready in <2 µs (Guaranteed by design)
UVLO-
VDDL
ENB
INL
GML
Vcc
Vdzl
Vddl
ENB
INL
LS Gate
1. ENB = 0V chip kept in “Standby”• This shuts of the internal regulator • <190uA current draw from VCC @ 15V
2. ENB = HI; Internal regulator will turn on and start charging VDDL
3. Low side chip comes out UVLO4. Low side gate switches in response to INL signal
VDDL
ENB
Low side Gate
~ 1us chip startup time
• Very low standby PLOSS (<10mW)• Fast startup coming out of
standby mode
Chip startup waveform
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Half-Bridge Performance
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High-side Startup Characteristics
Vb charging waveform
INH
INL
INH
High side gate
INL
HS starts up after 4 100ns INL pulses
100ns 100ns
• Integrated bootstrap FET charges the high side power supply when INL = HI• Chip capable of fast charging high side bootstrapped power supply even for INL pulses as small as 100ns
• Bootstrap FET immune to dv/dt induced noise – clean high side power supply charging profile• Ideal for high frequency operation
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Half-Bridge Performance
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Hard Switching Characteristics
1us INL pulse train
500V low side hard switching (BOOST mode) 400V high side hard switching (BUCK mode)
Vsw
Inductor current = 2A
1us INH pulse train
Vsw
Inductor current = 2A
Hard switching noise due to test board layout
Excellent common mode noise immunity – chip can handle very stressful hard switching environments
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Half-Bridge Performance
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Boost-mode Switching dV/dt Control• Ability to modulate hard switched edge dv/dt important to
reduce system noise and reduce EMI• Low side FET dv/dt can be modulated by adding external
components
With combination of external resistor and
capacitance
Measured dV/dt
0
40
80
120
160
200
0 200 400 600 800
dv/d
t (V/
ns)
Cext (pF)
Rext = 0 ohms
Rext = 40 ohms
Rext = 100 ohms
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Half-Bridge Performance
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• Typical propagation delays• Low side: TON = 20ns , TOFF = 15ns• High side: TON = 40ns, TOFF = 40ns
• Chip capable of transmitting 100ns high side pulses even under hard switching conditions
Low side Gate
INL
Ton = 20ns Toff = 15ns
High side Gate
INH
Ton = 40ns Toff = 40ns
INH
Vsw
100ns INH pulse
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Half-Bridge Performance
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Non–overlapping logic to ensure full shoot through protection
INL
INH
Low side Gate
High side GateHigh side Gate delayed until Low side Gate OFF
Low side Gate delayed until High side Gate OFF
Half-Bridge Performance
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Half-Bridge Performance
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What makes the half bridge IC ideal for high frequency ZVS applications?• Low COSS of power FETs • Low TON and TOFF• Ability to transmit ON pulses during dv/dt • High dv/dt immunity (no false ON or OFF pulses due to dv/dt induced noise)
High Voltage High Frequency Zero Voltage Switching (ZVS)
INL
Vsw
ZVS Current
High side third quadrant conduction
Low side third quadrant conduction
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Half-Bridge Performance
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• Level shifter capable of transmitting ON pulses over a wide range of VSW dv/dt’s without any degradation of turn on prop delay
• Critical attribute of the half bridge IC – specially under light load or startup conditions which demand some partial hard switching capability
INH
Vsw
INH
Vsw
40ns40ns
Recirculating energy large enough to induce full ZVS Insufficient recirculating energy resulting in partial hard switching
High side FET in third quadrant conductionHigh side FET partial hard switching
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Outline• Background
• GaN on Silicon• Power ICs in GaN• Navitas IC platform
• Navitas Half-Bridge IC• Why Half-Bridge IC?• Half Bridge Architecture
• Key Features & Performance
• Application examples• Active Clamp Flyback (ACF) Topology
• Summary20
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Active Clamp Flyback (ACF) Topology
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ACF Control IC
Diode Bridge
SR FET
AC lineRectified DC voltage
Half Bridge IC
Output
TransformerClamp Capacitor
• ACF is an advancement over the standard hard switching Quasi-Resonant (QR) Flyback Converter• Adding an extra switch (high side of the Half Bridge IC) enables ZVS• Reduces switching loss and enables frequency increase -> minimize transformer/EMI filters size and cost• Increase power density and efficiency!!!
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Half Bridge IC in ACF
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Half Bridge operating in an Active Clamp Flyback topology
Clean high side startup (as evidenced by the negative current excursions)High side startup after just one low side pulse
High side power supply charging and discharging sequence during and after a burst of PWM signals respectively
Excellent immunity to high frequency ringing NO FALSE SIGNALS !!!
Primary side current
Vsw
Hard switched transition at the 2nd INL pulse Negative current valleys indicate high side turn on resulting in full ZVS
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Vsw
Current
1 us/div
Vsw
Current
5 us/div
Vsw
Current
500 us/div
Half Bridge operating in various ACF modes
Full power Light load Burst mode
Half Bridge IC in ACF
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27W ACF board 75 % increase in power density
27W USB PD Charger
Vsw
Four point efficiency, 25C, no case, no air flow, no heat sink
Efficiency @ 10% load, 25C, no case, no air flow, no heat sink
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Mobile Charger Application
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Fast USB-A & USB-C chargers from Aukey using Navitas Half Bridge IC
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Summary
• Innovative Half-Bridge GaN power IC developed using Navitas proprietary GaN-on-Si technology and PDK
• Sets a new paradigm in efficiency and power density for AC/DC power conversion
• Ideally suited for ACF topology that is commonly employed in consumer adapter solutions over a wide range of power from 10W – 100W
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