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Transistors

1Publication date: February 2004 SJC00001CED

2SA0683 (2SA683), 2SA0684 (2SA684)Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SC1383, 2SC1384

Features

Allowing supply with the radial taping

Absolute Maximum Ratings Ta=25C

Electrical Characteristics Ta=25C 3C

5.90.2

0.70.1

4.90.2

8.6

0.

2

0.7

+0.

3

0.

2

13.5

0.

5

2.540.15

(3.2

)

(1.27)(1.27)

0.45+0.20.10.45+0.20.1

1 32

Unit: mm

1: Emitter

2: Collector

3: Base

EIAJ: SC-51

TO-92L-A1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank Q R S

hFE 85 to 170 120 to 240 170 to 340

Parameter Symbol Rating Unit

Collector-base voltage 2SA0683 VCBO 30 V

(Emitter open) 2SA0684 60

Collector-emitter voltage 2SA0683 VCEO 25 V

(Base open) 2SA0684 50

Emitter-base voltage (Collector open) VEBO 5 V

Collector current IC 1 A

Peak collector current ICP 1.5 A

Collector power dissipation PC 1 W

Junction temperature Tj 150 C

Storage temperature Tstg 55 to+150 C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage 2SA0683 VCBO IC=10 A, IE=0 30 V

(Emitter open) 2SA0684 60

Collector-emitter voltage 2SA0683 VCEO IC=2 mA, IB=0 25 V

(Base open) 2SA0684 50

Emitter-base voltage (Collector open) VEBO IE=10 A, IC=0 5 V

Collector-base cutoff current (Emitter open) ICBO VCB=20 V, IE=0 0.1 A

Forward current transfer ratio*1

hFE1*2

VCE=10 V, IC=500 mA 85 340

hFE2 VCE=5 V, IC=1 A 50

Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.2 0.4 V

Base-emitter saturation voltage VBE(sat) IC=500 mA, IB=50 mA 0.85 1.20 V

Transition frequency f T VCB=10 V, IE=50 mA, f =200 MHz 200 MHz

Collector output capacitance Cob VCB=10 V, IE=0, f =1 MHz 20 30 pF

(Common base, input open circuited)

Note) The part numbers in the parenthesis show conventional part number.

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2SA0683, 2SA0684

2 SJC00001CED

VCE(sat)IC VBE(sat)IC hFEIC

PCTa ICVCE ICIB

fTIE CobVCB VCERRBE

0 16040 120800

1.2

1.0

0.8

0.6

0.4

0.2CollectorpowerdissipationP

C

(W)

Ambient temperature Ta (C)

0 1082 640

1.5

1.25

1.0

0.75

0.50

0.25

IB=10 mA

9 mA

8 mA

7 mA6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

Ta=25C

CollectorcurrentI

C

(A)

Collector-emitter voltage VCE (V)

0 121082 640

1.2

1.0

0.8

0.6

0.4

0.2

VCE=10 V

Ta=25C

Base current IB (mA)

CollectorcurrentIC

(mA)

0.01 0.1 1 100.01

0.1

1

10

100

Ta=75C

25C

25C

IC/ IB=10

Collector-em

ittersaturationvoltageV

CE(sat)

(V)

Collector current IC (A)

0.01 0.1 1 100.01

0.1

1

10

100IC/ IB=10

Ta=25C 25C

75C

Base-emittersaturationvoltageV

BE(sat)

(V)

Collector current IC (A)

0.01 0.1 1 100

600

500

400

300

200

100

VCE=10 V

Ta=75C

25C

25C

Forw

ardcurrenttransferratioh

FE

Collector current IC (A)

1 10 1000

200

160

120

80

40

VCB=10 V

Ta=25C

TransitionfrequencyfT(MHz

)

Emitter current IE (mA)

1 10 1000

50

40

30

20

10

IE=0

f =1 MHz

Ta=25C

Collector-base voltage VCB (V)

Collectoroutputcapacitance

(Commonbase,inputopencircuited)

Cob

(pF)

0.1 1 10 1000

120

100

80

60

40

20

IC=10 mA

Ta=25C

2SA0684

2SA0683

Base-emitter resistance RBE(k)

Collector-emittervoltage

(ResistorbetweenBandE)

VCER

(V)

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2SA0683, 2SA0684

3SJC00001CED

ICEOTa Safe operation area

0 16040 120801

10

102

103

104VCE=10 V

Ambient temperature Ta (C)

ICEO

(Ta)

ICEO

(Ta=2

5C

)

0.1 1 10 100103

102

101

1

10Single pulse

Ta=25C

t =10 ms

2SA0684

2SA0683

t =1 s

ICP

IC

CollectorcurrentI

C

(A)

Collector-emitter voltage VCE (V)

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tions satisfy your requirements.

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2003 SEP