ac input response sop multi … ps2707-1 ac input response high collector to emitter voltage type...
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PHOTOCOUPLER
PS2707-1AC INPUT RESPONSE
HIGH COLLECTOR TO EMITTER VOLTAGE TYPE SOP MULTI PHOTOCOUPLER SERIES −NEPOC Series−
DESCRIPTION
The PS2707-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.
This is mounted in a plastic SOP (Small Outline Package) for high density applications. This package has shield effect to cut off ambient light.
FEATURES • AC input response • High collector to emitter voltage (VCEO = 120 V) • High isolation voltage (BV = 3 750 Vr.m.s.) • Small and thin (SOP) package • High-speed switching (tr, tf = 10 µs TYP.) • Ordering number of taping product: PS2707-1-F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option)
APPLICATIONS • Hybrid IC • Telephone/FAX • FA/OA equipment • Programmable logic controllers
ORDERING INFORMATION (Solder Contains Lead)
Part Number Package Safety Standard Approval
Standard specification products PS2707-1 4-pin SOP
• UL approved
PS2707-1-V 4-pin SOP VDE0884 specification products (Option)
ORDERING INFORMATION (Pb-Free)
Part Number Package Safety Standard Approval
Standard specification products PS2707-1-A 4-pin SOP
• UL approved
PS2707-1-V-A 4-pin SOP VDE0884 specification products (Option)
The mark shows major revised points. Document No. PN10245EJ01V0DS (1st edition) (Previous No. P11311EJ5V0DS00) Date Published February 2003 CP(K)
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PS2707-1
PACKAGE DIMENSIONS (in millimeters)
PS2707-14.0±0.5
7.0±0.34.4
0.5±0.3
0.15
+0.
10–0
.05
2.0
0.1±
0.1
2.1±
0.2
2.54
0.4+0.10–0.05 0.25 M
TOP VIEW
1. Anode, Cathode2. Cathode, Anode3. Emitter4. Collector
4 3
1 2
Data Sheet PN10245EJ01V0DS 2
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PS2707-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF ± 50 mA
Power Dissipation Derating ∆PD/°C 0.8 mW/°C
Power Dissipation PD 80 mW
Peak Forward Current*1 IFP ± 1 A
Transistor Collector to Emitter Voltage VCEO 120 V
Emitter to Collector Voltage VECO 6 V
Collector Current IC 30 mA
Power Dissipation Derating ∆PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage*2 BV 3 750 Vr.m.s.
Operating Ambient Temperature TA –55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet PN10245EJ01V0DS 3
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PS2707-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = ± 5 mA 1.1 1.4 V
Terminal Capacitance Ct V = 0 V, f = 1 MHz 60 pF
Transistor Collector to Emitter Dark Current
ICEO IF = 0 mA, VCE = 120 V 100 nA
Coupled CTR IF = ± 5 mA, VCE = 5 V 50 150 400 %
Current Transfer Ratio
(IC/IF) IF = ± 1 mA, VCE = 5 V 10 80
CTR Ratio*1 CTR1/ CTR2
IF = ± 5 mA, VCE = 5 V 0.3 1.0 3.0
Collector Saturation Voltage
VCE (sat) IF = ± 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time*2 tr VCC = 5 V, IC = 2 mA, RL = 1 kΩ 10 µs
Fall Time*2 tf 10
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF1
IF2
IC1
IC2
VCE
*2 Test circuit for switching time
VCC
VOUT
RL = 1 kΩ
PW = 100 sDuty Cycle = 1/10
µ
IFPulse Input
50 ΩInput monitor
Data Sheet PN10245EJ01V0DS 4
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PS2707-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
100
50
25
0
75
25 50 75 100
Ambient Temperature TA (˚C)
Dio
de P
ower
Dis
sipa
tion
PD (
mW
)
DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE
200
150
100
50
0 25 50 75 100
Ambient Temperature TA (˚C)
Tra
nsis
tor
Pow
er D
issi
patio
n P
C (
mW
)
TRANSISTOR POWER DISSIPATION vs.AMBIENT TEMPERATURE
1.5 mW/˚C
100
0.1
1
0.01
10
0.6 1.0 1.4 1.60.8 1.2
Forward Voltage VF (V)
For
war
d C
urre
nt I
F (
mA
)
FORWARD CURRENT vs.FORWARD VOLTAGE
+25 ˚C0 ˚C
–25 ˚C–55 ˚C
TA = +100 ˚C+75 ˚C+50 ˚C
FORWARD CURRENT vs.FORWARD VOLTAGE
Forward Voltage VF (V)
For
war
d C
urre
nt I
F (
mA
)
80
60
40
20
0
–40
–60
–80
–20
–1.2 0 0.4 1.2 1.6–1.6 –0.8 –0.4 0.8
50 000
0.1
500
5 000
10
10 000
1 000
10050
5
10.5
–60 0 40 80–40 –20 20 60 100
Ambient Temperature TA (˚C)
COLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATURE
Col
lect
or to
Em
itter
Dar
k C
urre
nt I
CE
O (
nA)
VCE = 40 V24 V10 V
10
0.1
0.5
5
1
0.2 0.6 1.00.0 0.4 0.8
Collector Saturation Voltage VCE (sat) (V)
Col
lect
or C
urre
nt I
C (
mA
)
COLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGE
IF = 25 mA
1.5 mA
1 mA
0.5 mA
10 mA5 mA
2.5 mA2 mA
Data Sheet PN10245EJ01V0DS 5
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10
4
0
8
6
2
6 102 4 8
Collector to Emitter Voltage VCE (V)
Col
lect
or C
urre
nt I
C (
mA
)
COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGE
IF =
10
mA
4 mA
2 mA
3 mA
1 mA
5 mA
0.5 mA
1.2
0.6
0.0
0.8
1.0
0.4
0.2
0 25 50 100–50 –25 75
Ambient Temperature TA (˚C)
NORMALIZED CURRENT TRANSFERRATIO vs. AMBIENT TEMPERATURE
Nor
mal
ized
Cur
rent
Tra
nsfe
r R
atio
CT
R
Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V
300
250
150
50
0
200
100
0.1 0.5 5 501 10
Forward Current IF (mA)
Cur
rent
Tra
nsfe
r R
atio
CT
R (
%)
CURRENT TRANSFER RATIO vs.FORWARD CURRENT
VCE = 5 V VCC = 5V, IC = 2 mA
100
0.1
10
1
10 1 k 10 k100
Load Resistance RL (Ω)
SWITCHING TIME vs.LOAD RESISTANCE
Sw
itchi
ng T
ime
t (
s)
µ
td
tf
tr
ts
IF = 5 mA, VCC = 5 V, CTR = 90 %
1 000
100
10
1
0.1 1 10 100
Load Resistance RL (kΩ)
SWITCHING TIME vs.LOAD RESISTANCE
Sw
itchi
ng T
ime
t (
s)
µ
1.2
0.4
0.0
1.0
0.6
0.2
0.8
5001 100.5 50 1005
Frequency f (kHz)
Nor
mal
ized
Gai
n G
V
FREQUENCY RESPONSE
RL = 1 kΩ510 Ω300 Ω100 Ω
tf
ts
tr
td
Data Sheet PN10245EJ01V0DS 6
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PS2707-1
1.2
1.0
0.0
0.4
0.2
0.8
0.6
102 1031 104 105
Time (Hr)
LONG TERM CTR DEGRADATION
CT
R (
Rel
ativ
e V
alue
)
IF = 1 mA, TA = 25 ˚CIF = 5 mA, TA = 25 ˚CIF = 20 mA, TA = 25 ˚CIF = 20 mA, TA = 60 ˚C
Remark The graphs indicate nominal characteristics.
Data Sheet PN10245EJ01V0DS 7
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PS2707-1
TAPING SPECIFICATIONS (in millimeters)
Tape Direction
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2φ
21.0±0.8φ
330±
2.0
φ 100±
1.0
φ
2.0±0.5
11.9 to 15.4Outer edge offlange
17.5±1.0
13.5±1.0
13.0
±0.
2φ
PS2707-1-F3 PS2707-1-F4
1.55±0.1
2.0±0.054.0±0.1 1.
75±
0.1
4.6±0.1
2.9 MAX.
0.38.0±0.1
Outline and Dimensions (Tape)
2.4±0.1
1.5+0.1–0
7.4±
0.1
5.5±
0.05
12.0
±0.
2
Data Sheet PN10245EJ01V0DS 8
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PS2707-1
NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s(preheating)
220˚C
180˚C
Pac
kage
Sur
face
Tem
pera
ture
T (
˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings.
Data Sheet PN10245EJ01V0DS 9
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PS2707-1
USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10245EJ01V0DS 10
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PS2707-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s.
IV III
Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test)Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
710 850
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.6 × UIORM, Pd < 5 pC
Upr 1 140 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN VDE 0109) 2
Clearance distance > 5 mm
Creepage distance > 5 mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage temperature range Tstg −55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C
Ris MIN. Ris MIN.
1012 1011
Ω Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi)
Tsi Isi Psi
Ris MIN.
150 200 300
109
°C mA mW
Ω
Data Sheet PN10245EJ01V0DS 11
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Concein
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