advance datasheet revision: april 2015€¦ · ©2015 northrop grumman systems corporation note:...

Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or

conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration

Regulations (EAR).

Advance Datasheet Revision: April 2015

APN232 13.5-15.5 GHz GaN Power Amplifier

Web: http://www.as.northropgrumman.com/mps ©2015 Northrop Grumman Systems Corporation

Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]

Product Features

RF frequency: 13.5 to 15.5 GHz

Linear Gain: 13 dB typ.

Psat: 42 dBm typ.

PAE% @ Psat: 43% typ.

Die Size: 3.255 sq. mm.

0.2um GaN HEMT Process

4 mil SiC substrate

DC Power: 28 VDC @ 640 mA

Product Description The APN232 monolithic GaN HEMT amplifier

is a broadband, two-stage power device,

designed for use in SATCOM Terminals and

point-to-point digital radios. To ensure rugged

and reliable operation, HEMT devices are

fully passivated. Both bond pad and backside

metallization are Au-based that is compatible

with epoxy and eutectic die attach methods.

Applications

Point-to-Point Digital Radios

Point-to-Multipoint Digital Radios

SATCOM Terminals

Performance Characteristics (Ta = 25°C)

Absolute Maximum Ratings (Ta = 25°C)

X = 2100 um Y = 1550 um

Specification Min Typ Max Unit

Frequency 13.5 15.5 GHz

Linear Gain 12 13 dB

Input Return Loss 7 10 dB

Output Return Loss 5 9 dB

P1dB (Pulsed) 38.5 dBm

Psat (Pulsed) 42 dBm

PAE @ Psat 43 %

Vd 28 V

Vg -3.5 V

Id 640 mA

Parameter Min Max Unit

Vd 20 28 V

Id 800 mA

Vg -5 0 V

Input drive level TBD dBm

Assy. Temperature 300 deg. C

(TBD seconds)



Regulations (EAR).





0123456789

10111213141516

10 11 12 13 14 15 16 17 18 19 20

Gain

(d

B)

Frequency (GHz)

Linear Gain vs. Frequency

Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)

Vd = 28 V, Id = 640 mA*

Input Return Loss vs. Frequency

Power**, Gain, PAE% vs. Frequency

Output Return Loss vs. Frequency

* Pulsed-Power On-Wafer

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

10 11 12 13 14 15 16 17 18 19 20

Inp

ut

Retu

rn L

oss (

dB

)

Frequency (GHz)

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

10 11 12 13 14 15 16 17 18 19 20

Ou

tpu

t R

etu

rn L

oss (

dB

)

Frequency (GHz)

0

5

10

15

20

25

30

35

40

45

50

12 13 14 15 16 17

Po

ut

(dB

m),

Gain

(d

b),

PA

E%

Frequency (GHz)

Linear Gain (dB) Gain @ Pin=-5 dBmGain @ Pin=34 dBm P1dB (dBm)Pout @ Pin=34dBm PAE% @ Pin=34dBmMax PAE%



Regulations (EAR).





0

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

-10 -5 0 5 10 15 20 25 30 35

Id (

mA

)

Pin (dBm)

Gain @ 12.5 GHz

Gain @ 13.5 GHz

Gain @ 14.5 GHz

Gain @ 15.5 GHz

Gain @ 16.5 GHz

0

5

10

15

20

25

30

35

40

45

50

-5 0 5 10 15 20 25 30 35

Po

ut

(dB

m)

Pin (dBm)

PAE @ 12.5 GHz

PAE @ 13.5 GHz

PAE @ 14.5 GHz

PAE @ 15.5 GHz

PAE @ 16.5 GHz

0

4

8

12

16

20

24

28

32

36

40

44

0

2

4

6

8

10

12

14

16

18

20

22

-10 -5 0 5 10 15 20 25 30 35

Po

ut

(dB

m)

Gain

(d

B)

Pin (dBm)

Gain @ 12.5 GHzGain @ 13.5 GHzGain @ 15.5 GHzGain @ 14.5 GHzGain @ 16.5 GHzPout @ 12.5 GHzPout @ 13.5 GHzPout @ 14.5 GHzPout @ 15.5 GHzPout @ 16.5 GHz

PoutGain

Pout & Gain Vs. vs. Pin

Id vs. Pin

PAE% vs. Pin

* On-Wafer Pulsed-Power

Pout, Gain & PAE% vs. Frequency


Vd = 28 V, Id = 640 mA*

0

5

10

15

20

25

30

35

40

45

50

12 13 14 15 16 17

Po

ut

(dB

m),

Gain

(d

b),

PA

E%

Frequency (GHz)

Linear Gain (dB) Gain @ Pin=-5 dBmGain @ Pin=34 dBm P1dB (dBm)Pout @ Pin=34dBm PAE% @ Pin=34dBmMax PAE%



Regulations (EAR).





0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25 30 35

PA

E%

Pin (dBm)

PAE% @ 13GHz PAE% @ 13.5GHz



PAE% @ 16GHz

0

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

0 5 10 15 20 25 30 35

Id (

mA

)

Pin (dBm)

Id @ 13GHz Id @ 13.5GHz



Id @ 16GHz

0

4

8

12

16

20

24

28

32

36

40

44

0

2

4

6

8

10

12

14

16

18

20

22

0 5 10 15 20 25 30 35

Po

ut

(dB

m)

Gain

(d

B)

Pin (dBm)

Gain @ 13GHz Gain @ 13.5GHzGain @ 14GHz Gain @ 14.5GHzGain @ 15GHz Gain @ 15.5GHzGain @ 16GHz Pout @ 13GHzPout @ 13.5GHz Pout @ 14GHzPout @ 14.5GHz Pout @ 15GHzPout @ 15.5GHz Pout @ 16GHz

PoutGain


Id vs. Pin

PAE% vs. Pin

**CW Fixture *On-wafer Pulsed Power


Measured Fixture Performance Characteristics (Typical Performance at 25°C)

Vd = 28 V, Id = 640 mA **

02468

101214161820222426283032343638404244

12 13 14 15 16 17

Po

ut

(dB

m),

Gain

(d

b),

PA

E%

Frequency (GHz)

Linear Gain (dB)* Gain @ Pin=-0 dBm

P1dB (dBm) Psat (dBm)

PAE% @ PSat Max PAE%



Regulations (EAR).





0

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

0 5 10 15 20 25 30 35

Id (

mA

)

Pin (dBm)




Id @ 16GHz

0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25 30 35

PA

E%

Pin (dBm)




PAE% @ 16GHz

02468

101214161820222426283032343638404244

12 13 14 15 16 17

Po

ut

(dB

m),

Gain

(d

b),

PA

E%

Frequency (GHz)




0

4

8

12

16

20

24

28

32

36

40

44

0

2

4

6

8

10

12

14

16

18

20

22

0 5 10 15 20 25 30 35

Po

ut

(dB

m)

Gain

(d

B)

Pin (dBm)

Gain @ 13GHz Gain @ 13.5GHzGain @ 14GHz Gain @ 14.5GHzGain @ 15GHz Gain @ 15.5GHzGain @ 16GHz Gain @ 13GHzGain @ 13.5GHz Gain @ 14GHzGain @ 14.5GHz Gain @ 15GHzGain @ 15.5GHz Gain @ 16GHz

PoutGain


Id vs. Pin

PAE% vs. Pin




Vd = 24 V, Id = 640 mA **



Regulations (EAR).





02468

101214161820222426283032343638404244

12 13 14 15 16 17

Po

ut

(dB

m),

Gain

(d

b),

PA

E%

Frequency (GHz)




0

4

8

12

16

20

24

28

32

36

40

44

0

2

4

6

8

10

12

14

16

18

20

22

0 5 10 15 20 25 30 35

Po

ut

(dB

m)

Gain

(d

B)

Pin (dBm)

Gain @ 13GHz Gain @ 13.5GHzGain @ 14GHz Gain @ 14.5GHzGain @ 15GHz Gain @ 15.5GHzGain @ 16GHz Pout @ 13GHzPout @ 13.5GHz Pout @ 14GHzPout @ 14.5GHz Pout @ 15GHzPout @ 15.5GHz Pout @ 16GHz

PoutGain

0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25 30 35

PA

E%

Pin (dBm)




PAE% @ 16GHz

0

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

0 5 10 15 20 25 30 35

Id (

mA

)

Pin (dBm)




Id @ 16GHz


Id vs. Pin

PAE% vs. Pin




Vd = 20 V, Id = 640 mA **



Regulations (EAR).





* Pulsed-Power On-Wafer

Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang

8.0 0.788 -175.150 0.056 -69.128 0.002 -149.171 0.624 145.730

8.5 0.792 177.549 0.054 -50.533 0.003 100.724 0.595 126.795

9.0 0.782 169.211 0.081 -26.971 0.005 98.959 0.528 102.406

9.5 0.767 160.468 0.171 -9.116 0.006 84.303 0.455 75.452

10.0 0.743 148.982 0.425 -13.926 0.002 39.443 0.386 43.034

10.5 0.685 136.345 1.041 -37.959 0.004 45.457 0.307 6.553

11.0 0.606 120.640 2.053 -72.411 0.005 78.299 0.252 -24.432

11.5 0.461 101.870 3.697 -111.478 0.004 -19.991 0.229 -50.326

12.0 0.305 82.279 5.877 -156.942 0.006 22.788 0.215 -71.266

12.5 0.140 57.241 7.944 156.616 0.006 -11.884 0.209 -83.304

13.0 0.033 -7.924 9.536 110.075 0.004 -57.805 0.223 -95.152

13.5 0.107 -101.508 10.221 65.248 0.007 -38.639 0.217 -111.473

14.0 0.192 -119.288 10.070 25.403 0.002 -170.834 0.204 -115.664

14.5 0.245 -134.405 10.015 -11.781 0.002 -161.559 0.172 -119.745

15.0 0.273 -143.902 10.061 -47.813 0.002 64.799 0.174 -116.071

15.5 0.254 -141.837 9.979 -83.956 0.004 125.238 0.186 -115.597

16.0 0.259 -133.613 9.615 -121.442 0.004 51.271 0.205 -120.465

16.5 0.348 -122.232 8.968 -159.474 0.005 5.375 0.227 -134.886

17.0 0.477 -126.098 8.065 162.641 0.005 -6.692 0.200 -153.352

17.5 0.569 -132.862 6.836 125.406 0.008 -53.726 0.144 -179.669

18.0 0.662 -139.509 5.673 90.341 0.004 -176.720 0.062 117.915

18.5 0.725 -148.466 4.646 55.355 0.003 -141.496 0.101 25.350

19.0 0.769 -155.321 3.720 20.982 0.007 -102.598 0.209 -8.918

19.5 0.807 -160.898 2.978 -12.195 0.002 -161.597 0.322 -25.318

20.0 0.845 -166.839 2.350 -46.408 0.006 111.398 0.433 -39.840

20.5 0.865 -171.744 1.839 -81.138 0.002 -135.188 0.545 -54.065

21.0 0.895 -176.622 1.404 -118.400 0.005 -152.650 0.647 -65.974

21.5 0.910 178.326 1.002 -159.002 0.005 76.670 0.747 -76.390

22.0 0.925 173.710 0.627 159.607 0.009 87.246 0.832 -89.068

22.5 0.923 169.561 0.341 122.484 0.005 -140.272 0.873 -99.611

23.0 0.931 165.925 0.173 92.298 0.010 115.686 0.903 -108.257

23.5 0.934 162.265 0.087 68.801 0.005 68.757 0.918 -116.042

24.0 0.940 159.140 0.043 52.012 0.007 102.110 0.933 -122.749

Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang

8.0 0.763 -118.728 2.025 -5.316 0.026 -79.725 0.643 105.703

8.5 0.745 -129.232 2.475 -29.249 0.035 -109.207 0.581 90.176

9.0 0.727 -144.920 3.063 -54.848 0.049 -135.564 0.500 68.623

9.5 0.660 -165.250 3.844 -84.234 0.064 -159.157 0.401 33.060

10.0 0.551 168.079 4.640 -117.414 0.077 167.180 0.369 -26.017

10.5 0.338 132.231 5.184 -155.335 0.087 129.682 0.442 -89.481

11.0 0.173 88.903 5.221 167.878 0.100 94.397 0.570 -135.864

11.5 0.109 -2.669 4.972 134.073 0.099 61.580 0.639 -168.949

12.0 0.121 -42.153 4.772 103.029 0.096 33.347 0.634 164.069

12.5 0.190 -67.395 4.772 72.213 0.099 3.157 0.593 137.031

13.0 0.206 -92.413 4.877 37.631 0.107 -31.666 0.503 105.027

13.5 0.183 -137.289 4.978 -2.741 0.109 -69.653 0.408 53.102

14.0 0.184 101.705 4.581 -51.124 0.102 -119.302 0.481 -25.051

14.5 0.464 23.429 3.251 -102.034 0.075 -165.984 0.694 -86.861

15.0 0.687 -19.644 1.868 -141.891 0.042 158.450 0.830 -122.949

15.5 0.790 -45.634 1.067 -169.984 0.023 125.612 0.895 -146.686

16.0 0.868 -66.251 0.636 166.489 0.014 93.154 0.921 -162.925

16.5 0.883 -80.739 0.398 148.501 0.007 63.953 0.942 -174.306

17.0 0.913 -94.134 0.258 133.907 0.006 77.989 0.957 175.897

17.5 0.898 -103.079 0.175 117.097 0.004 60.761 0.974 166.982

18.0 0.943 -113.030 0.121 102.141 0.003 48.952 0.979 158.426

18.5 0.919 -120.648 0.082 92.753 0.003 23.430 0.972 149.970

19.0 0.959 -129.866 0.062 79.009 0.005 29.283 0.959 141.554

19.5 0.945 -137.015 0.053 66.885 0.004 31.623 0.950 131.493

20.0 0.969 -144.637 0.043 48.927 0.001 66.212 0.895 117.360

20.5 0.948 -152.423 0.038 17.435 0.001 129.984 0.553 82.893

21.0 0.969 -158.197 0.020 -28.627 0.001 -106.560 0.280 177.907

21.5 0.921 -166.413 0.005 -35.339 0.003 33.807 0.820 158.926

22.0 0.961 -170.156 0.004 12.052 0.004 -135.315 0.939 142.715

22.5 0.906 -177.330 0.005 18.547 0.004 -78.396 0.959 131.501

23.0 0.969 178.450 0.003 -6.674 0.004 3.125 0.974 123.035

23.5 0.924 171.476 0.002 25.446 0.003 146.767 0.964 116.072

24.0 0.978 166.907 0.004 8.586 0.007 1.366 0.965 110.042


Vd = 28 V, Id = 640 mA*



Regulations (EAR).





536 µm

Die Size and Bond Pad Locations (Not to Scale)

1550 µm

900 µm 900 µm

2100 µm

X = 2100 25 µm Y = 1550 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 100 x 100 0.5 µm Chip Thickness = 101 5 µm

Biasing/De-Biasing Details:

APN232 can only be biased at the bottom of the die.

Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V

b. Know your devices’ breakdown voltages

c. Use a power supply with both voltage and current limit.

d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to

your test fixture.

i. Apply negative gate voltage (-5 V) to ensure that all devices are off

ii. Ramp up drain bias to ~10 V

iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating

current is achieved

iv. Ramp up drain to operating bias

v. Gradually increase gate bias voltage while monitoring drain current until the operating current

is achieved

e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):

i. Gradually decrease drain bias to 0 V.

ii. Gradually decrease gate bias to 0 V.

iii. Turn off supply voltages

136 µm

RFIN

GND

GND

RFOUT

GND

GND

GN

D

GN

D

VD

VG



Regulations (EAR).





RFIN

GND

GND

RFOUT

GND

GND

GN

D

GN

D

VD

VG

Recommended Assembly Notes

1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils

from the amplifier.

2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.

3. Part must be biased from both sides as indicated.

4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device

is to be used, do NOT use the 0.1uF , 50V Capacitors.

Mounting Processes

Most Northrop Grumman Aerospace Systems (NGAS) GaN IC chips have a gold backing and can be

mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of

AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum

recommended temp during die attach is 320oC for 30 seconds.

Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the

pick up tool.

CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN

CHIPS.

Suggested Bonding Arrangement

RF

Output

Substrate

RF

Input

Substrate

= 100 pF, 15V (Shunt)

= 10 Ohms, 30V (Series)

= 0.01uF, 15V (Shunt)

PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,

ASSEMBLING OR BIASING THESE MMICS!

= 0.1uF, 15V (Shunt)

= 100 pF, 50V (Shunt)

= 0.01uF, 50V (Shunt)

= 0.1uF, 50V (Shunt) [4]

VD

VG [4]

Approved for Public Release: Northrop Grumman Case 15-0917, 05/04/15

advance datasheet revision: april 2015€¦ · ©2015 northrop grumman systems corporation note:...

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