advanced 3level technical note

8/13/2019 Advanced 3level Technical Note

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Electronic Devices Business Headquarters All copy rights are reserved. 1

Feb. 2012Fuji Electric Co., Ltd.

Electronic Device Business headquarters,

Technology Division

T-type Advanced 3-level Inverter ModulePower dissipation and comparison tables

1. Introduction of Advanced 3-level Inverter Module

2. Inverter Mode comparison in 300A modules

3. Rectifier Mode comparison in 300A modules

4. RB-IGBT device characteristics


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2-level, NPC and A-NPC 3-level control

A-NPC 3level is suitable topology for High efficiency alternative Energy systems.

Type 2-level Inverter NPC 3-level Inverter A-NPC 3-levelwith Reverse series

A-NPC 3-levelwith RB-IGBT

Circuit

Device IGBT:1200V IGBT:600V IGBT:1200V+600V(Reverse series)

IGBT:1200V+600V(RB-IGBT)

OutputVoltage

On-loss Small Large Large Small

SW-loss Large Small Small Small

Filter loss Large Small Small Small

Composing Easy Complication Easy Easy

Total Normal Normal Good Excellent

T

T

T

T

T3

T4

T

TT43

P

U

N

C

M

T

TT 4

T 3

P

U

N

M


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9 55 7 5 7 5 7

5 6 2 7

2 2 1 7 2 7 1 8 2 8 2 9

5 9 6 4

1 8 6 8 4 8 6 5 1 9

2 1 9 11 7 9 9 7

1 5 2 6 6 1 5 4 8

5

1

1 5

2

2 5

1 2 3 4L

n

n

e

Mo

W)

2-level, NPC and A-NPC 3-level control comparison,in Inverter Mode


2-level Inverter (2L) NPC 3-level Inverter (NPC) A-NPC 3-levelReverse series RB-IGBT

IGBT 1200V IGBT 600V IGBT 1200V/600V, RB-IGBT 600V

T

T

T3

T4

T

T

T

TT 43

P

U

N

C

M

T

TT4

T3

P

U

N

M

A-NPC 3-level (RB-IGBT)A-NPC 3-level (Reverse series)NPC 3-level2-level

71.3%72.4%85.3%100%


4/32


9557 57 57

562 7

243 3 326 3 336

573 5

939 6 635 6 2 1

2 86 2

1752 91531 3 15 8 1

5

1

15

2

25

1 2 3 4

nRe

fe

Mo

W)

2-level, NPC and A-NPC 3-level control comparison,in Rectifier Mode


2-level Inverter (2L) NPC 3-level Inverter (NPC) A-NPC 3-levelReverse series RB-IGBT

IGBT 1200V IGBT 600V IGBT 1200V/600V, RB-IGBT 600V

T

T

T3

T4

T

T

T

TT 43

P

U

N

C

M

T

TT4

T3

P

U

N

M

A-NPC 3-level (RB-IGBT)A-NPC 3-level (Reverse series)NPC 3-level2-level

72.2%73.4%84.0%100%


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Equivalent circuit

Fuji A-NPC 3-level inverter Module 100A Type

Type name : 12MBI100VN-120-50

12MBI100VX-120-50T1,T2 : 1200V/100A

T3,T4 : 600V/100A

For 400V class AC output

12MBI100VN-120-50 Outline View

12MBI100VN-120-50

12MBI100VX-120-50


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Fuji A-NPC 3-level inverter Module 300A Type

Equivalent circuit(T3 and T4 are RB-IGBT)

Package outline

T

TT4

T3

P

U

N

M

T1 G

T1/T4 E

T2 G

T2 E

T3 E T3 G

CT4 G

Type name : 4MBI300VG-120R-50

T1,T2 : 1200V/300AT3,T4 : 600V/300A

For 400V class AC output


7/32Electronic Devices Business Headquarters All copy rights are reserved. 7

Inverter Mode comparison in 300A modules

2-level; 2MBI300VH-120-50NPC 3-level; 2MBI300VB-060-50 seriesAdvanced 3-level; 4MBI300VG-120R-50

Conditions;

100kVA InverterAC 400V, Io=145A, cos=1 Vdc=660V(330V+330V), Modulation rate =0.98Tj=125deg,Rg(T1,T2)=+10/-1ohm, Rg(T3,T4)=+8.2/-39ohm


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0%50%100%

150%200%

250%300%

350%400%

0 10 20 30Fc (kHz)

D e v

i c e

L o s s

( % )

2 Level

NPC 3-Level

Advanced 3-LevelRB-IGBT

Device Loss comparison in Inverter Mode

Advanced 3-level module achieves lowest loss in 30kHzand less carrier frequency

Device Loss as 5kHz loss=100%



950.0570.0 570.0

562.7

221.7 282.9

596.4

1008.0651.9

2109.1

1799.7

1504.8

0

500

1,000

1,500

2,000

2,500

2-Level NPC 3-Level A- 3Level

D i s s i p a

t i o n

L o s s e s

( W )

Von Loss

SW Loss

Filter Loss950.0

570.0 570.0

562.7

221.7 282.9

596.4

1008.0651.9

2109.1

1799.7

1504.8

0

500

1,000

1,500

2,000

2,500


D i s s i p a

t i o n

L o s s e s

( W )

Von Loss

SW Loss

Filter Loss

Von Loss

SW Loss

Filter Loss

Loss Comparison in fc=5kHz Inverter Mode

Total loss of A- 3level Inverter is lowest in 5kHz Inverter Mode 30% loss reduction from 2-level Inverter

17% loss reduction from NPC 3-level Inverter

100% 85% 71%



Device Loss Analysis in fc=5kHz Inverter Mode

T1 and T4 FWD of A-3 level is not flowed the current.

CD1

CD2

89.6 67.0 83.9

25.7

10.9 17.4

39.0

16.3

20.7

9.8 29.1

84.0 24.7 9.0

17 9.8

0

50

100

150

200

250

1 2 3

Dc

L

W)

2-Level NPC 3 -Level A- 3Level

T1,T2IGBT

Poff

Pon

Psat

T1,T2FWD

Prr

Pf

T1,T4IGBT

PsatPon

T2,T3IGBT

P

Pf

Poff

CD1,2FWD

P

193W 193W 205W 205W 155W 155W

T1,T2IGBT

Psat

Pon

T3,T4RB - IGBT

PrrPsat

Poff

89.6 67.0 83.9

25.7

10.9 17.4

39.0

16.3

20.7

9.8 29.1

84.0 24.7 9.0

17 9.8

0

50

100

150

200

250

1 2 3

Dc

L

W)

2-Level NPC 3 -Level A- 3Level

T1,T2IGBT

Poff

Pon

Psat

T1,T2FWD

Prr

Pf

T1,T4IGBT

PsatPon

T2,T3

P

Psat

Poff

CD1,2FWD

P

193W 193W 205W 205W 155W 155W

IGBTPsat

Pon

T3,T4RB - IGBT

PrrPsat

Poff



Rectifier Mode comparison in 300A modules

2-level; 2MBI300VH-120-50NPC 3-level; 2MBI300VB-060-50 seriesAdvanced 3-level; 4MBI300VG-120R-50

Conditions;100kVA InverterAC 400V, Io=145A, cos=1 Vdc=660V(330V+330V), Modulation rate =0.98Tj=125degRg(T1,T2)=+10/-1ohm, Rg(T3,T4)=+8.2/-39ohm



0500

1,000

1,5002,0002,5003,0003,500

4,0004,500

0 5 10 15 20 25 30 35

Fc (kHz)

D i s s i p a

t i o n

L o s s

( W )

2 Level

NPC 3-Level


Total Loss Comparison in Rectifier Mode


Total Loss



0%

50%

100%

150%

200%

250%

300%

350%

400%

0 10 20 30

Fc (kHz)

D e v

i c e

L o s s

( % )

2 Level

NPC 3-Level


Device Loss comparison in Rectifier Mode


Device Loss as 5kHz loss 100%



Loss Comparison in fc=5kHz Rectifier Mode

Total loss of A- 3level Inverter is lowest in 5kHz Rectifier Mode 30% loss reduction from 2-level Inverter

14% loss reduction from NPC 3-level Inverter

100% 84% 72%

950.0570.0 570.0

562.7

243.3 336.0

573.5

939.6 602.1

2086.21752.9

1508.1

0

500

1,000

1,500

2,000

2,500

1 2 3

D i s s i p a

t i o n

L o s s e s

( W )

Von Loss

SW Loss

Filter Loss


950.0570.0 570.0

562.7

243.3 336.0

573.5

939.6 602.1

2086.21752.9

1508.1

0

500

1,000

1,500

2,000

2,500

1 2 3

D i s s i p a

t i o n

L o s s e s

( W )

Von Loss

SW Loss

Filter Loss

Von Loss

SW Loss

Filter Loss




Device Loss Analysis in fc=5kHz Rectifier Mode

T1 and T4 FWD of A-3 level is not flowed the current.

CD1

CD2

10.1 25.7

39.0

85.5

61.1 75.6

29.1

13.4

20.5 7.3

24.7 10.9

14.0 16.3

21.5 30.6

17.1

0

20

40

60

80

100 120

140 160

180

200

2level NPC 3level A 3level

D

c

L

W)

189W 189W 167W 167W 156W 156W

T1,T2IGBT

Poff

Pon

Psat

T1,T2FWD

Prr

Pf

T1,T4FWD

PfPrr

T2,T3IGBT

T2,T3FWD

P

Poff

PonPsat

CD1,2FWDPf

T1,T4FWD

Pf

Prr

T3,T4RB - IGBT

Poff

Pon

Psat

10.1 25.7

39.0

85.5

61.1 75.6

29.1

13.4

20.5 7.3

24.7 10.9

14.0 16.3

21.5 30.6

17.1

0

20

40

60

80

100 120

140 160

180

200

2level NPC 3level A 3level

D

c

L

W)

189W 189W 167W 167W 156W 156W

T1,T2IGBT

Poff

Pon

Psat

T1,T2FWD

Prr

Pf

T1,T4FWD

PfPrr

T2,T3IGBT

T2,T3FWD

P

Poff

PonPsat

CD1,2FWDPf

T1,T2FWD

Pf

Prr

T3,T4RB - IGBT

Poff

Pon

Psat



Reduction control of RB-IGBT leakage current



570.0 570.0

282.9 282.9

651.9 651.9

16.30.0

1521.21504.8

0

200400

600

800

1000

1200

1400

1600

Advanced 3-LevelRB-IGBT with Leakage Current

Reduction Control

Advanced 3-Level without LeakageCurrent Reduction Control

RB- IGBT Leakage Current Loss in 300A type

100% 100.01%

Von Loss

SW Loss

Filter Loss

LeakageCurrent Loss

RB-IGBT leakage Current loss is extremely low at Tj=125degJunction temperature, Tj, must be below 125deg

D e v i c e

l o s s e s

( W )

A-3 Level moduleWith Leakage Current Reduction

Control

A-3 Level moduleWithout Leakage Current Reduction Control

+0.01%Only



-15

-10

-5

0

-800 -600 -400 -200 0

Vce (V)

J c

( / c

2

J c

( m A / c m

2 )

Vge=0V

Vge=+15V

Leakage current

Leakage current can be reducedwith Vg=+15V

p+

Collector

n-

p pn+n+

Emitter Gate

p+ p+

Depletion region

RB-IGBT Leakage current

Vge=0V -15V

Tj=125



RB-IGBT device characteristics



Dicing Surface

Depletion region

Negative bias

GND

N-

P +P +

P +

Active Scribe

Carrier generation at dicing surface

Conventional IGBT

Cross sectional diagram of RB-IGBT

JunctionIsolation region

DicingSurface

Depletion region

GND

Negative biasP +

P +P+

N-

Active Scribe

RB-IGBT



-1000 -500 0 500 1000-1x10 -3

-5x10 -4

0

5x10 -4

1x10-3

RB-IGBT

(GE short)

Tj=25 oC

Conventional NPT-IGBT(V

GE=+15V)

RB-IGBT

RB-IGBT (VGE

=+15V)

I C (

A )

VCE

(V)

Blocking voltage

Forward ->


23/32


E

o f f ( m

J ) @ T j = 1 2 5 d e g

C IGBT + FWD

600V/100A device

RB-IGBT

Vce(sat) @Tj=125degC

E

o f f ( m

J ) @ T j = 1 2 5 d e g

C IGBT + FWD

600V/100A device

RB-IGBT

Vce(sat) @Tj=125degC

Trade-off relationship for RB-IGBT


24/32


The switching waveforms of RB-IGBTCondition:T3 switching T1-FWD recovery modeTj=RT, Vcc2=400V, Ic=300A, RG=+8.2/-39ohm

VGE(T3)=+/-15V, VGE(T4)=+15V,snubber=1.84uF, Ls=34nH

Condition:T1 switching T4 RB-IGBT recovery modeTj=RT, Vcc2=400V, Ic=300A, RG=+10ohm

VGE(T1)=+/-15V, VGE(T4)=+15V,snubber=1.84uF, Ls=34nH

Turn-on

VGE: 10V/div

VCE: 100V/div

IC: 100A/div

t: 200ns/div

VCE

IC

VGE

Turn-off

VGE: 10V/div

VCE: 100V/divIC: 100A/div

t: 500ns/div

VGE

VCE

IC

Riverse-recovery

VCE: 100V/div

IC: 100A/div

t: 200ns/div

IC

VCE

IC

Riverse-recovery

VCE: 100V/div

IC: 100A/divt: 500ns/div

VCEIC

Fuji RB-IGBT can be realized of fast switching operation same as normal IGBT and FWD.


25/32


RB-IGBT Turn-On, Turn-OFF measurement Circuit

P

U

N

+

M

T4

VGE = +15V

T3

T1

VGE = -15V

T2

VGE = -15V

1.8uFVcc2

Ls=34nH

M403

400V

Ic

Vce

Wiring Inductance


26/32


P

U

N

+

M

T2

VGE = -15V

1.8uFVcc2

Ls=34nH

T3

VGE = -15V

T4

VGE = +15V

T1

Wiring Inductance

M403

400V

Ic

Vce

RB-IGBT Reverse Recovery measurement Circuit


27/32


Mechanism of RB-IGBT Leakage current

p+

n -

p+

Collector

Emitter

Reverse Voltage Vce

n+

Electron

Hole

Hole

Gate

Mechanism at reverse voltage

Generation of hole at Reverse voltage area

Electron flow through the emitter area

This electron is base current of PNP transistor

Generation of Hole at P-layer

Generation of Large leakage current

Reverse voltage area


28/32


Reduction method of Leakage current

(i) G-E short (ii) VGE =+15V n+ Channel

Electron flows the n+ of Emitter Not generation of Holepn diode operation

Small Leakage current

p+

n -

p+

Reverse volgate

n+

Electron

Holep+

n -

p+

Collector

Emitter

Base

Reverse Voltage

n+

pnp Base Open Generation of hole from emitter Large Leakage current

Electron

Hole

Hole

Gate


29/32


When RB-IGBT uses the FWD mode, please input the Vge = +15V.Because the Leakage current of RB-IGBT is larger when the Vge=0V.RB-IGBT leakage current can be reduced with Vge=+15V.

T1

T2

T4

T3

P

U

N

M

=

Io

Vge=+15V

T4 Gate

T2 Gate

T3 Gate-10V

-10V

+15V

+15V

+15V

-10V

When T3 uses the FWD mode,please input the Vge = +15V of T3.


30/32


12 in 1, 100A type module


31/32


Comparison of Device Loss ( 12in1 module 100A Type)

Conditions:20kVA InverterAC 400V, Io=30A, cos=0.9 Vdc=700V(350V+350V)Modulation rate =0.8

Tj=125C, Rg=datasheet value

2-Level: 7MBR100VN120-50NPC 3-level: 7MBR100VZ060-50A-NPC 3-level : 12MBI100VN-120-50

0

50

100

150

200

250

0 5 10 15 20 25 30 35 40

Carrier Frequency Hz

P o w e r

D i s s i p a t

i o n

W

2 Level

NPC 3-Level


100A Type switching loss is same level of NPC 3level. The Total loss of 100A Type A -3level is the smallest in all the frequencyranges.

There is no crossing point.


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Notes1. This technical note contains the product specifications, characteristics, data, materials, and

structures as of January2012.The contents are subject to change without notice for specification changes or other reasons.When using a product listed in this Catalog, be sure to obtain the latest specifications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only.No right or license, either express or implied, under any patent, copyright, trade secret or otherintellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted.Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to theinfringement or alleged infringement of other's intellectual property rights which may arise from the use of theapplications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage ofsemiconductor products may become faulty. When using Fuji Electric semiconductor products in yourequipment, you are requested to take adequate safety measures to prevent the equipment from causing aphysical injury, fire, or other problem if any of the products become faulty. It is recommended to make yourdesign fail-safe, flame retardant, and free of malfunction.

4. The products introduced in this technical note are intended for use in the following electronic and electricalequipment which has normal reliability requirements.

Computers OA equipment Communications equipment (terminal devices) Measurement equipment

Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc.5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for

the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. Whenusing these products for such equipment, take adequate measures such as a backup system to prevent theequipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.

Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic -signal control equipment Gas leakage detectors with an auto -shut-off feature Emergency equipment for responding to disasters and anti -burglary devices Safety devices Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following andequivalents to strategic equipment (without limitation).

Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment

7. Copyright 1996-2012 by Fuji Electric Co., Ltd. All rights reserved.No part of this technical note may be reproduced in any form or by any means without the express permissionof Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents beforeusing the product.Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products notin accordance with instructions set forth herein.

advanced 3level technical note

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