advanced photoresists for the more-than-moore industry...recent developments: az lnr photoresist...
TRANSCRIPT
![Page 1: Advanced Photoresists for the More-than-Moore Industry...Recent Developments: AZ LNR Photoresist Optimized for Sputtering in a Lift-Off Process for Metallization • Negative-tone](https://reader033.vdocuments.net/reader033/viewer/2022042805/5f5d771aac1a121f0d0a4c18/html5/thumbnails/1.jpg)
Dr. Fumio Kita
MEMS & Imaging Sensors
Grenoble, 25th-27th of September 2019
Merck Performance Materials
Semiconductor Solutions
Advanced Photoresists for the More-than-Moore Industry
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The Semiconductor Industry
Market Segments Based on Device Types
PackagingLogicMemory
(DRAM & NAND)
MtM(More than Moore)
Hard Disks
MEMS Devices
RF Devices
Power Devices
Optoelectronic Devices
(Image Sensor, Laser, LED)
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Product Line-up
Merck i-line Resist Portfolio (Positive Tone)
Exposure (mJ/cm²)
Resolu
tio
n (
µm
)
6100
79003300ECI MIR701
MIR900F/T 1.0 um
8100
F/T 2.5 um
MIR703iHP
iHBF/T 0.75 um on BARC
GXRF/T 3.0 um
Different viscosity versions of a product type allow the adjustment of F/T within a wider range
Trade-OffResolution vs. Dose
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Product Line-up
Merck Lift-Off Resists Portfolio (Negative Tone)
Exposure (mJ/cm²)
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Typ
ical
Min
imu
m
Featu
re (
µm
)R
esolu
tio
n (
µm
)
nLOF5500
nLOF2000
F/T 1.0 um
F/T 3.5 um
5200 IR F/T 2.0 um
LNRpLOF F/T 3.5 umF/T 12.0 um
nLOF K7000F/T 0.5 um
Positive Tone!
DUV Resist !
i-line exposure except for nLOF K7000 (KrF)
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Product Line-up
Merck Photoresist and Generic Semiconductor ProcessesProcess
& Required Film Thickness
Etching (Dry, Wet)Implant
FT: 0.5-4 µm
Lift-OffFT: 0.5-15 µm
Dry Etch, ImplantFT: 4-15 µm
RIE in MEMSFT: > 20 µm
Po
sit
ive
Neg
ati
ve
Im
ag
eR
eversal
5200
pLOF*
nLOF5500
nLOF2000
LNR*
nLOF K***
15nXTNX7020
125nXT
IPS-6000
TF5000X
40XT
P4000** / P4620M**
12XT
3DT
10XT
5
iHB*
iHP*
7900*
MIR 700*
ECI
3300
6100
8100
MIR 900*
GXR
Note: i- and g-line sensitivity except: *pure i-line **pure g-line ***KrF-line
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Product Line-up
Merck Thick-Film Resists Portfolio for Packaging
Applications& Required
Film Thickness
RDL in 2.5D/3D/FOFT: 1-20 µm
TSV, RDL, EtchFT: 3-15 µm
Cu, UBM PlatingFT: 5-30 µm
Solder Bumping, Cu Pillar
FT: 20-80 µm
Cu Pillar in 3D/FOFT: 80-400 µm
Po
sit
ive
Neg
ati
ve 15nXT
125nXT
NX7020
P4000* / P4620M*
10XT
TF5000X
40XT
12XT
3DT
IPS-6000
6 Note: i- and g-line sensitivity except: *pure g-line
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Recent Developments: AZ pLOF Photoresist
Positive-Tone Photoresist in a Lift-Off Process for Metallization
• Positive-tone i-line photoresist with ‘negative’ profile
• Profile ideal for lift-off process
• Excellent removal in lift-off process
• Film thickness range: 5 – 15 um
• Tapered Profile
Dimensions of the profile:
• Line opening (top): 3 um
• Film thickness: 12 um
Miniaturization in backend processes & increasing demand in precision limit utilization of ‘mechanical’ lifting
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Metallization
(Evaporation)
SubstrateSubstrate
“Mechanical” Lift-Off and Stripping
Issue: ’Crown’ or ’Bat Ears’
Substrate
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Recent Developments: AZ LNR Photoresist
Optimized for Sputtering in a Lift-Off Process for Metallization
• Negative-tone i-line photoresist
• Single coating solution with high undercut
• Ideal to combine sputtering with lift-off
• Profile is reliably reproducible
• Profile is adjustable by process parameters
• Good removal properties
• Uniform Throw-Distance of sputtered metal
Throw Throw
Dimensions of the profile:
• Undercut height: 1.1 um
• Undercut distance: 3.6 um
• Film thickness: 3.5 um
Why is a photoresist with high undercut necessary?
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Substrate
Sputtering is highly un-directional No metal bridging
Metallization Stripping
SubstrateSubstrate
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Recent Developments: AZ nLOF K7000 Photoresist
KrF Photoresist in a Lift-Off Process for Metallization
• High Precision
(far beyond i-line system)
5G standard is pushing the RF Filter evolution
• further miniaturization
• higher absolute CD precision requirements
• limits for i-line based systems
• Negative-tone KrF photoresist
• Tapered profile ideal for lift-off process
• Film thickness range: 0.5 – 1.5 um
Substrate
Metal DepositionPhotoresist Stripping
Substrate Substrate
0.35 um L/S@FT=1.3 um
0.18 um L/S@FT=0.53 um
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Recent Developments: AZ 3DT-400
Positive-tone Photoresist for Electroplating Applications
• Designed Undercut creates small footing that stabilizes electroplated structure
• Positive-tone i-line and bb photoresist
• Unique feature: designed with slight undercut
• Profile ideal for electroplating
• Excellent removal properties
• Photoresist film thickness range: 5 – 20 um
• High aspect ratio of (5 : 1)
Undercut
Dimensions of the profile:
• Film thickness: 12 um
• The photoresist profile is the template for the electroplated metal
• A designed undercut is beneficial
Substrate
Electroplating Stripping
Substrate Substrate
Photoresist
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Footing stabilizes
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Merck’s Market Approach
Dedicated to Semiconductor Industry
Global Footprint
Partnership approach and open to Joint Development Activities
Technical Service Support
Address special needs and provide customer specific solutions (R&D)
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