adverse drug events associated with the use of analgesics
TRANSCRIPT
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Matthew Duty & Phillip Sandborn
ENEE416
9/29/2011
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Wet Etch Etch: removal of material from wafer (e.g. removal
silicon dioxide)
Wet Etch: removal by liquid-phase etchant
Dry Etch: removal by plasma-phase etchant
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Advantages/Disadvantages + Selectivity
+ Inexpensive
+ Speed
+ Batch process
- Isotropic (undercutting)
- Temperature sensitivity
- Safety
- Chemical Waste
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Selectivity Ability to etch one material but not another (e.g.
silicon dioxide but not silicon)
Different etch rates for each material
Different etch rates for certain crystal orientations
Allows anisotropic etch
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Isotropy
Mask Material to etch
Si-substrate
Undercut
Isotropic: etches equally in all directions
No Undercut
Anisotropic: etches at different rates in different directions
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Anisotropic Etching
Mask
Material to etch
<100>
<111> 54.74°
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Anisotropic Etching
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Etchants – HNA Hydrofluoric acid; Nitric acid; Acetic acid
Redox reaction oxidizes Si; Si2+ reacts to form SiO2 (reaction with nitric acid)
SiO2 dissolved by HF acid to become soluble in acetic acid
Isotropic
Etch rate = 1-3um/min
Mask: Si3N4 (not SiO2!)
Low cost
Simple
Process not easily repeatable
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Etchants – KOH Potassium hydroxide
Anisotropic (Si plane selectivity: <110>:<100>:<111> = 600:400:1)
Etch rate = 2um/min
Mask: Si3N4 or SiO2 (SiO2 will etch quicker, though)
Not CMOS-compatible (Ions contaminate gate oxide)
Not allowed in some IC cleanrooms
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Etchants – EDP Ethylene Diamine, Pyrochatechol, and water
Anisotropic (Si plane selectivity: <100>:<111> = 35:1)
Etch rate = 1um/min
Mask: SiO2
Not CMOS-compatible (Ions contaminate gate oxide)
Not allowed in some IC cleanrooms
Dangerous
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Etchants – TMAH Tetramethylammonium hydroxide
No alkali ions (CMOS-compatible)
Anisotropic (Si plane selectivity: <100>:<111> = 10-35:1)
Mask: SiO2
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Stops – Controlling Etch Depth Photolithography
Anisotropy
Heavily-doped etch stops
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References http://www.mrsec.harvard.edu/education/ap298r2004/Erli%20chen%20Fabrication%20
III%20-%20Etching.pdf
http://en.wikipedia.org/wiki/Etching_%28microfabrication%29
Jaeger, Richard C. (2002). "Lithography". Introduction to Microelectronic Fabrication. Upper Saddle River: Prentice Hall
Schwartz, B., and Robbins, H. “Chemical Etching of Silicon” Journal of the Electrochemical Society, 123 (12), pp. 1903-1909
Collins, Scott D. "Etch Stop Techniques for Micromachining." Journal of the Electrochemical Society 144.6 (1997): 2242-262.