Alliance Memory Inc.2014

Worldwide HQ in

San Carlos California, USA

Sales offices in 7 countries

Warehouses in 3 countries – California

USA, Taiwan & Shanghai, China

Over 75 International Distributor Sales Offices

Over 55.6 million parts shipped worldwide

Over 300 products on offer

Alliance Memory Products

Fast Asynchronous SRAMs

Low Power Asynchronous SRAMs

ZMD Low Power Asynchronous SRAMs

Synchronous SRAMs

Synchronous DRAMs (SDRs)

DDR1, DDR2, DDR3 & Mobile DDR1 DRAMs

Alliance Memory Product Line

Mobile Technology Industrial Medical

Consumer/Gaming Automotive Telecom/Networking

Alliance Memory Markets

ABBDelta TauGEHoneywellHunter EngineeringMaximRockwellSiemens

Philips MedicalRespironicsMindrayDelphi Medical SystemsMassimoCardinal HealthC.M.T. MedicalOlympusGE MedicalNova BiomedicalAdvanced Medical InstrumentsPolycom

IPCTellabsPattonAvocentKofaxIntraRom

IGTFuturlogicHoneywellCantaloupe SystemsCrestronAltekMettlerHarman Music GroupIngersol RandDolbyWincorSmartDTVVeeder Root

Consumer/Gaming

Automotive

Industrial

Telecom/Networking

Medical

BoschDelphiBeckhoff Automation

Representative Customers

Wafer Fab TestAssembly

Alliance Memoryships all material out of

warehousesin the USA, Taiwan or Shanghai

World-Class Manufacturing Partners

World-Class Distributor Partners

Published Article in Electronics Specifier Design Magazine by David Bagby CEO Alliance Memory

Alliance Memory Financials

5 Years Shipped Sales Revenues

• Over 55.6 million parts shipped worldwide • Buffer stock programs• Quick sample turnaround – same day deliveries

Alliance Memory % Sales Revenue per RegionAmericas Total 35%

APAC Total 32%Europe Total 32%Japan Total 1%

13

Product Roadmap

All devices are in production64K New die rev in full production AS7C164A-15JCNVariety of package options: SOJ/TSOP I & TSOP II/DIP/BGAI-temp range devices fully screened at -40°C to +85°C 16M Available Now! (1M x 16) & 2M x8 - 10ns industrial temp - BGA (48-ball) TSOP II

8Kx815 ns

512Kx88 – 20 ns

256Kx168 – 20 ns

32Kx812 – 20 ns

32Kx810 – 20 ns

32Kx1610 – 20 ns

32Kx1612 – 20 ns

512Kx812 – 20 ns

256Kx1612 – 20 ns

128Kx810 – 20 ns

64Kx1610 – 20 ns

128Kx810 – 20 ns

64Kx1610 – 20 ns

5Volt

3.3Volt

64K 256K 512K 1M 4M

256Kx810 – 20 ns

128Kx1610 – 20 ns

2M

512Kx1610 ns

1Mx810ns

16M New!

1Mx162M x 810 ns

8M

Fast Asynchronous SRAM

Available

Now!

256K

4M

64K

Density

0.18

Process

1M 0.18

0.18

0.35

0.18

2M

2012 2013 2017

In Production

2014 2018

8M 0.18

2015 2016 2019 2020+

Fast Asynchronous SRAM

512K

0.18

In production16M

16M Now available

0.18

16M – datasheet & Samples available now!

Sample

In production

In production

In production

In production

In production

In production

In production

All devices are in productionVariety of package options: sTSOP/TSOPI/TSOPII/TFBGA/SOP/PDIPI-temp range devices fully screened at -40°C to +85°C 32M Now available! (2M x 16) – 48pin TSOP I

Datasheet available now! Production Q2-2013

8Kx870 ns

512Kx855ns

256Kx1655 ns

32Kx855 ns

128Kx855 ns

64Kx1655 ns

256Kx855 ns

128Kx1655 ns

Wide 2.7 – 5 Volt

8Kx855 ns

1024Kx855ns

512Kx1655 ns

8M 16M

1024Kx1655/70ns

2M 4M1M

4.5 – 5.5V Volt

64K 256K

32Kx870 ns

ZMD 8Kx8

35/55/70 ns

ZMD 32Kx8

35/55/70 ns

32M

2M x1655ns

Now availabl

e!

Low Power SRAM

64K LPSRAM- Organization – x8- Package – 28pin SOP, 28pin DIP- Speed – 35, 55, 70ns- Temperatures:

Commercial 0 -70 C, Industrial -45 – 85 C, Automotive -45 – 125 C

256K LPSRAM-Organization - x8-Package- 28pin SOP, 28pin DIP-Speed – 35, 55, 70ns-Temperatures:

Commercial 0 -70 C, Industrial -45 – 85 C, Automotive -45 – 125 C

ZMD SRAM

4M

64K In production0.35

Process

1M 0.15

0.35

0.15

256K

2012 2016 2018 2020

8M 0.15

16M 0.15

In Production

20172013 20152014 2019

Low Power SRAM

Density

2M 0.15

Production Q2-201332M 0.15

Sample

32M Now available!

In production

In production

In production

In production

In production

In production

1M x 18166 MHz

512K x 36166 MHz

3.3 Volt

9M 18M4M

2.5 Volt

All devices are in production Various speed options Package options: 100 TQFP I-temp range devices fully screened at -40°C to +85°C

256Kx187.5ns/150Mhz/166Mhz

128Kx367.5ns/150Mhz/166Mhz

512Kx187.5ns/150Mhz

256Kx367.5ns/150Mhz

Synchronous SRAM

4M In production

Process

0.18

0.18

2013 2016 2017

In production

In production

2019

9M

0.1818M

Production

20182014 20212015 2020

Synchronous SRAM

Density

21

All devices are in production64M, 128M & 256M

Package options: 54pin TSOP II, 54 ball FBGATemp Range: Commercial, Industrial, Automotive

512MPackage options: 54pin TSOP II, Temp Range: Commercial, Industrial – New A die

16M Package options: 50pin TSOP II, Temp Range: Commercial only

3.3 Volt

AS4C4M16S-7TCN/BCN4M x 16

7ns

AS4C8M16S-7TCN/BCN

8M x 167ns

AS4C16M16S-7TCN/BCN

16M x 167ns

AS4C4M16S-6TIN/6BIN4M x 16

6ns

AS4C8M16S-6TIN/

6BIN8M x 16

6ns

AS4C16M16S-6TIN/6BIN

16M x 166ns

AS4C1M16S-7TCN

1M x 167ns

AS4C16M16S-6TAN

16M x 166ns

AS4C8M16S-6TAN8M x 16

6ns

AS4C4M16S-6TAN

4M x 166ns

AS4C32M16SA-7TCN

32M x 167ns

AS4C32M16SA-7TIN

32M x 167ns

128M 256M64M 512M16M

Synchronous DRAM (SDR)x16

In full production – x16 63nm technology 16M

Density

63nm

Process

256M

70n

m

70n

m

128M In full production – x 16 70nm technology

In full production – x 16 70nm technology

Samples

Synchronous DRAM x 16

70n

m

64M

In full production – x 16 70nm technology

Production

512M**

70n

m

In full production March 2013 – x 16 70nm technologyJan13

2014 20152013 2016

**die shrink ‘A’ - awaiting details on process

New ‘A’ die Feb14

64M, and 128M Package options: 86pin TSOP II, 90ball FBGATemp Range: Commercial and industrial temp

256MPackage options: 90ball FBGA onlyTemp Range: Commercial and industrial temp

3.3 Volt

128M 256M64M

AS4C2M32S- 5,6,7TCN/7BCN

6TIN/6BIN2M x 325,6,7ns

AS4C4M32S-6,7TCN/7BCN

6TIN/6BIN4M x 326,7ns

AS4C8M32S-7BCN6BIN

8M x 326,7ns

Synchronous DRAM (SDR)x32

64M

Density

63nm BGA

Process

70nm BGA 256M

Samples

Synchronous DRAM x 32

128M

Production

In full production Feb 2013 – 2M x 32 – 63nm technologyJan13

Jan13 In full production Feb 2013 – 4M x 32 – 63nm technology

Jan13 In full production Feb 2013 – 8M x 32 – 70nm technology

2014 20152013 2016

90nm TSOP

63nm BGA

90nm TSOP

90nm TSOP

64M, 128M , 256M and 512MPackage options: 66pin TSOP IITemp Range: Commercial, Industrial

2.5 Volt

128M 256M64M

AS4C4M16D1-5TCN

4M x 165ns

AS4C8M16D1-5TCN

8M x 165ns

AS4C16M16D1-5TCN

16M x 165ns

AS4C4M16D1-5TIN

4M x 165ns

AS4C8M16D1-5TIN8M x 16

5ns

AS4C16M16D1-5TIN

16M x 165ns

Synchronous DDR1 AS4C32M16D1-

5TCN32M x 16

5nsAS4C16M16D1-

5TIN32M x 16

5ns

512M

64M

Density

70nm

Process

512M

63n

m

63n

m

256M

In full production by February 2013 – 70nm technology

Samples

DDR1

68n

m

128M

Production

Now!

Now!

Now!

Now!

In full production by June 2013 – 63nm technology

In full production by February 2013

In full production by March 2013 – 45nm technology

2014 2015

2013

2016Q1

Q2

Q3

Q4

512M and 1GbPackage options: 512M – (32M x16) 84ball FBGA 1G (64M x16) 84ball FBGA 1G (128Mx8) 60ball FBGATemp Range: Commercial, Industrial

1.8 Volt

1Gb 1Gb512M

AS4C32M16D2-25BCN

32M x 1625ns

AS4C64M16D2-25BCN

64M x 1625ns

AS4C128M8D2-25BCN

128M x 825ns

Synchronous DDR2

AS4C32M16D2-25BIN

32M x 1625ns

AS4C64M16D2-25BIN

64M x 1625ns

AS4C128M8D2-25BIN

128M x 825ns

Density Process

45n

m

50n

m

1GB(128x8)

Samples

DDR2

1GB(64x16)

Production

Now!

Now!

In full production – 50nm technology

In full production – 45nm technology

2014 2015 2016

2013

Q1

Q2

Q3

Q4

512M 68nm In full production – 68nm technologyNow!

1Gb, 2Gb and 4GbPackage options: 1G (128Mx8) 78ball FBGA / 1G (64M x 16) 96ball FBGA2G (128Mx16) 96ball FBGA /2G (256Mx8) 78ball FBGA4G (256Mx16) 96ball FBGA /4G (512Mx8) 78ball FBGATemp Range: Commercial, Industrial and Automotive (AEC-Q100)

1.5 Volt

1Gb 2Gb1GAS4C128M8D3-

12BCN128M x 8

12ns

Synchronous DDR3

AS4C128M8D3-12BIN

128M x 812ns

AS4C128M8D3-12BAN

128M x 812ns

AS4C64M16D3-12BCN

64M x 1612ns

AS4C64M16D3-12BIN

64M x 1612ns

AS4C64M16D3-12BAN

64M x 1612ns

AS4C128M16D3-12BCN

128M x 1612ns

AS4C128M16D3-12BIN

128M x 1612ns

AS4C256M8D3-12BCN

256M x 812ns

AS4C256M8D3-12BIN

256M x 812ns

4GbAS4C256M16D

3-12BCN256M x 16

12ns

AS4C256M16D3-12BIN

256M x 1612ns

AS4C512M8D3-12BCN

512M x 812ns

AS4C512M8D3-12BIN

512M x 812ns

Density Process

30n

m

30n

m

1GB(64Mx16)

Samples

DDR3

1GB(128Mx8)

Production

In full production – 30nm technologyFeb

2015 2016 20172014 1H 2014 2H

30nm In full production – 30nm technologyFeb

4GB(256Mx16)

2GB(128Mx16)

2GB(256Mx8) 30n

m

30n

m

In full production – 30nm technologyFeb

In full production – 30nm technology

In full production – 30nm technologyFeb

Feb

4GB(512Mx8) 30n

m

In full production – 30nm technologyFeb

256M and 512MPackage options: 60ball FPBGATemp Range: Commercial temp only currently

1.8 Volt

256M

AS4C16M16MD1-6BCN

16M x 166ns

Mobile DDR AS4C32M16MD1-

6BCN32M x 16

5ns

512M

256M

Density

63nm

Process

63n

m

In full production by February 2014– 63nm technology

Samples

Mobile DDR

512M

Production

In full production by March 2014 – 63nm technology

2014 2015

2013

2016Q1

Q2

Q3

Q4

Alliance Memory New Products Q1-2014/Q2-2014

2Gb DDR2 & 1Gb Mobile DDR

NEW DDR 2 releases coming

Density Organization VCC Speed Package Alliance Part Number

2Gb 128M x 16 1.8V 400Mhz 84-ball FBGA AS4C128M16MD2-25BCN

128M x 16 1.8V 400Mhz 84-ball FBGA AS4C128M16MD2-25BCNTR

128M x 16 1.8V 400Mhz 84-ball FBGA AS4C128M16MD2-25BIN

128M x 16 1.8V 400Mhz 84-ball FBGA AS4C128M16MD2-25BINTR

NEW MOBILE DDR 1 releases coming

Density Organization VCC Speed Package Alliance Part Number

1Gb 64M x 16 1.8V 200Mhz 60-ball FBGA AS4C64M16MD1-6BCN

64M x 16 1.8V 200Mhz 60-ball FBGA AS4C64M16MD1-6BCNTR

64M x 16 1.8V 200Mhz 60-ball FBGA AS4C64M16MD1-6BIN

64M x 16 1.8V 200Mhz 60-ball FBGA AS4C64M16MD1-6BINTR

Alliance Memory New Products Q1-2014/Q2-2014

1Gb, 2Gb and 4Gb low voltage 1.35V DDR3

NEW DDR 3 releases coming

DensityOrganization VCC Speed Package Alliance Part Number

1G 64M x 16 1.35V 800MHz 96-ball FBGA AS4C64M16D3L-12BCN

2G 128M x 16 1.35V 800MHz 96-ball FBGA AS4C128M16D3L-12BCN

4G 256M x 16 1.35V 800MHz 96-ball FBGA AS4C256M16D3L-12BCN

Quality & Reliability

ISO 9001 certified until 2015

Document control system

Incoming QA and monitoring in place

Reliability program in place

State-of-the-art test equipment and techniques

Compliance to JEDEC and EIAJ standards

REACH ROHS2 compliant Automotive AECQ-100

compliant

Alliance Quality and Reliability

Published Article in Material Handling & Logistics Magazine by Richard Ward – QA & Logistics Director

•Company Information •Datasheets•Cross Reference Guides•Weekly stock inventory report•ROHS/REACH Compliancy information•Package details•MPQ’s •Testimonials•Worldwide Distributor information

available on the web at www.alliancememory.com

Alliance Memory Website

Why Engage with Alliance Memory?

• Fast Information response times • Buffer stock programs• Quick sample turnaround

• Inventory held in the U.S. Shanghai & Taiwan

• Multiple manufacturing sites

• Great customer service and support

• All parts go through additional ‘Burn In’ testing

• Management has strong Memory background

• COMMITMENT TO LEGACY Memory!