datasheet - stl47n60m6 - n-channel 600 v, 70 mΩ typ., 31 a
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5
123
4
PowerFLAT™ 8x8 HV
NG1DS2PS34D5Z
Drain(5)
Gate(1)
Driversource (2)
Powersource (3, 4)
FeaturesOrder code VDS RDS(on) max. ID
STL47N60M6 600 V 82 mΩ 31 A
• Reduced switching losses• Lower RDS(on) x area vs previous generation• Low gate input resistance• 100% avalanche tested• Zener-protected• Excellent switching performance thanks to the extra driving source pin
Applications• Switching applications
DescriptionThe new MDmesh™ M6 technology incorporates the most recent advancements tothe well-known and consolidated MDmesh family of SJ MOSFETs.STMicroelectronics builds on the previous generation of MDmesh devices through itsnew M6 technology, which combines excellent RDS(on) per area improvement withone of the most effective switching behaviors available, as well as a user-friendlyexperience for maximum end-application efficiency.
Product status link
STL47N60M6
Product summary
Order code STL47N60M6
Marking 47N60M6
Package PowerFLAT™ 8x8 HV
Packing Tape and reel
N-channel 600 V, 70 mΩ typ., 31 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 8x8 HV package
STL47N60M6
Datasheet
DS12382 - Rev 2 - January 2019For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ±25 V
ID Drain current (continuous) at TC = 25 °C 31 A
ID Drain current (continuous) at TC= 100 °C 20 A
IDM (1) Drain current (pulsed) 124 A
PTOT Total power dissipation at TC = 25 °C 190 W
dv/dt(2) Peak diode recovery voltage slope 15 V/ns
dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns
Tstg Storage temperature range-55 to 150 °C
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.2. ISD ≤ 31 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.66 °C/W
Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W
1. When mounted on 1 inch2 FR-4, 2 Oz copper board
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IARAvalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)5.3 A
EASSingle pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)800 mJ
STL47N60M6Electrical ratings
DS12382 - Rev 2 page 2/15
2 Electrical characteristics
(TC= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdownvoltage VGS = 0 V, ID = 1 mA 600 V
IDSS Zero gate voltage drain currentVGS = 0 V, VDS = 600 V 1 µA
VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 µA
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.25 4 4.75 V
RDS(on)Static drain-source
on-resistanceVGS = 10 V, ID = 15.5 A 70 82 mΩ
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS= 100 V, f = 1 MHz, VGS = 0 V
- 2340 - pF
Coss Output capacitance - 149 - pF
Crss Reverse transfer capacitance - 3.7 - pF
Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 390 - pF
RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.4 - Ω
Qg Total gate charge VDD = 480 V, ID = 36 A, VGS = 0 to 10 V
(see Figure 14. Test circuit for gatecharge behavior)
- 52.2 - nC
Qgs Gate-source charge - 16.5 - nC
Qgd Gate-drain charge - 23 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0to 80% VDSS
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 18 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Switching times testcircuit for resistive load andFigure 18. Switching time waveform)
- 21.5 - ns
tr Rise time - 18.7 - ns
td(off) Turn-off delay time - 54.6 - ns
tf Fall time - 8.1 - ns
STL47N60M6Electrical characteristics
DS12382 - Rev 2 page 3/15
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD (1) Source-drain current - 31 A
ISDM , (2) (1) Source-drain current (pulsed) - 124 A
VSD (3) Forward on voltage VGS = 0 V, ISD = 31 A - 1.6 V
trr Reverse recovery timeISD = 36 A, di/dt = 100 A/µs, VDD = 60 V(see Figure 15. Test circuit for inductiveload switching and diode recovery times)
- 281 ns
Qrr Reverse recovery charge - 3.67 µC
IRRM Reverse recovery current - 26.1 A
trr Reverse recovery time ISD = 36 A, di/dt = 100 A/µs, VDD = 60 V,Tj = 150 °C (see Figure 15. Test circuitfor inductive load switching and dioderecovery times)
- 424 ns
Qrr Reverse recovery charge - 7.2 µC
IRRM Reverse recovery current - 34 A
1. This value is limited by package.2. Pulse width is limited by safe operating area.3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
STL47N60M6Electrical characteristics
DS12382 - Rev 2 page 4/15
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
GIPG080120191350SOA
10 2
10 1
10 0
10 -1
10 -1 10 0 10 1 10 2
ID (A)
VDS (V)
tp =1 µs
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 mssingle pulse
TJ≤150 °CTC=25 °CVGS=10 V
Operation in this areais limited by R DS(on)
Figure 2. Thermal impedance
10 -1
10 -2
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2
K
tp (s)
δ = 0.5
δ = 0.2δ = 0.1
δ = 0.05
δ = 0.02δ = 0.01
Single pulse
Zth PowerFLAT 8x8 HV
Figure 3. Output characteristics
GIPG101220181057OCH
120
100
80
60
40
20
00 2 4 6 8 10 12 14 16
ID (A)
VDS (V)
VGS =7 V
VGS =8 V
VGS =7, 8, 9, 10 V
VGS =6 V
VGS =9 VVGS =10 V
Figure 4. Transfer characteristics
GIPG101220181058TCH
120
100
80
60
40
20
04 5 6 7 8 9
ID (A)
VGS (V)
VDS =16 V
Figure 5. Gate charge vs gate-source voltage
GIPG101220181058QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
00 10 20 30 40 50 60
VDS (V)
VGS (V)
Qg (nC)
VDD = 480 V,
Qgs
ID = 36 A
Qg
VDS
Qgd
Figure 6. Static drain-source on-resistance
GIPG090120191039RID
76
74
72
70
68
660 5 10 15 20 25 30
RDS(on) (mΩ)
ID (A)
VGS =10 V
STL47N60M6Electrical characteristics (curves)
DS12382 - Rev 2 page 5/15
Figure 7. Capacitance variations
GIPG101220181057CVR
10 4
10 3
10 2
10 1
10 0
10 -1 10 0 10 1 10 2
C (pF)
VDS (V)
f = 1 MHz
Figure 8. Normalized gate threshold voltage vstemperature
GIPG101220181029VTH
1.1
1.0
0.9
0.8
0.7
0.6-75 -25 25 75 125
VGS(th) (norm.)
TJ (°C)
ID = 250 μA
Figure 9. Normalized on-resistance vs temperature
GIPG101220181029RON
2.2
1.8
1.4
1.0
0.6
0.2-75 -25 25 75 125
RDS(on) (norm.)
VGS = 10 V
TJ (°C)
Figure 10. Normalized V(BR)DSS vs temperature
GIPG101220181055BDV
1.08
1.04
1.00
0.96
0.92
0.88-75 -25 25 75 125
V(BR)DSS (norm.)
ID = 1 mA
TJ (°C)
Figure 11. Output capacitance stored energy
ADG181220181310EOS
20
16
12
8
4
00 100 200 300 400 500 600
EOSS (µJ)
VDS (V)
Figure 12. Source-drain diode forward characteristics
GIPG080120191351SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.50 5 10 15 20 25 30
VSD (V)
ISD (A)
Tj = -50 °C
Tj = 25 °C
Tj = 150 °C
STL47N60M6Electrical characteristics (curves)
DS12382 - Rev 2 page 6/15
3 Test circuits
Figure 13. Switching times test circuit for resistive load
AM15855v1
VGS
PW
VD
RG
RL
D.U.T.
2200µF
3.3µF VDD
GND2 (power)
GND1 (driver signal)
+
Figure 14. Test circuit for gate charge behavior
GADG180720181011SA
RL
47 kΩ
2.7 kΩ
1 kΩ
IG= CONST100 Ω
D.U.T.
+pulse width
VGS
2200μF
VG
VDD
GND1 GND2
Figure 15. Test circuit for inductive load switching anddiode recovery times
AM15857v1
AD
D.U.T.
SB
G
25Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100µH
µF3.3 1000
µF VDD
GND1 GND2
D.U.T.
+
Figure 16. Unclamped inductive load test circuit
AM15858v1
Vi
Pw
VD
ID
D.U.T.
L
2200µF
3.3µF VDD
GND1 GND2
+
Figure 17. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 18. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STL47N60M6Test circuits
DS12382 - Rev 2 page 7/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
STL47N60M6Package information
DS12382 - Rev 2 page 8/15
4.1 PowerFLAT™ 8x8 HV package information
Figure 19. PowerFLAT™ 8x8 HV package outline
8222871_Rev_4
STL47N60M6PowerFLAT™ 8x8 HV package information
DS12382 - Rev 2 page 9/15
Table 8. PowerFLAT™ 8x8 HV mechanical data
Ref.Dimensions (in mm)
Min. Typ. Max.
A 0.75 0.85 0.95
A1 0.00 0.05
A3 0.10 0.20 0.30
b 0.90 1.00 1.10
D 7.90 8.00 8.10
E 7.90 8.00 8.10
D2 7.10 7.20 7.30
E1 2.65 2.75 2.85
E2 4.25 4.35 4.45
e 2.00 BSC
L 0.40 0.50 0.60
Figure 20. PowerFLAT™ 8x8 HV footprint
8222871_REV_4_footprint
Note: All dimensions are in millimeters.
STL47N60M6PowerFLAT™ 8x8 HV package information
DS12382 - Rev 2 page 10/15
4.2 PowerFLAT™ 8x8 HV packing information
Figure 21. PowerFLAT™ 8x8 HV tape
W (1
6.00
±0.3
)
E (1.75±0.1)
F (7
.50±
0.1)
A0 (8.30±0.1)P1 (12.00±0.1)
P2 (2.0±0.1) P0 (4.0±0.1)
D0 ( 1.55±0.05)
D1 ( 1.5 Min)
T (0.30±0.05)
B0 (8
.30±
0.1)
K0 (1.10±0.1)
Note: Base and Bulk qu antity 3000 pcs
8229819_Tape_revA
Note: All dimensions are in millimeters.
Figure 22. PowerFLAT™ 8x8 HV package orientation in carrier tape
STL47N60M6PowerFLAT™ 8x8 HV packing information
DS12382 - Rev 2 page 11/15
Figure 23. PowerFLAT™ 8x8 HV reel
8229819_Reel_revA
Note: All dimensions are in millimeters.
STL47N60M6PowerFLAT™ 8x8 HV packing information
DS12382 - Rev 2 page 12/15
Revision history
Table 9. Document revision history
Date Revision Changes
15-Nov-2017 1 First release
22-Jan-2019 2
Modified Table 1. Absolute maximum ratings, Table 2. Thermal data,Table 3. Avalanche characteristics, Table 4. On/off states, Table 5. Dynamic,Table 6. Switching times and Table 7. Source-drain diode.
Added Section 2.1 Electrical characteristics (curves).
Modified Section 3 Test circuits.
Minor text changes.
STL47N60M6
DS12382 - Rev 2 page 13/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 PowerFLAT 8x8 HV package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2 PowerFLAT™ 8x8 HV packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
STL47N60M6Contents
DS12382 - Rev 2 page 14/15
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STL47N60M6
DS12382 - Rev 2 page 15/15
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