ece4430 project presentation
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BETA-MULTIPLIER REFERENCE GENERATOR
BANDGAP REFERENCE GENERATOR
GROUP3 – DEBASHIS BANERJEE JASON PINTO
ASHITA MATHEW
ECE4430 Project Presentation
DESIGN SPECIFICATIONS
Technology Node – TSMC 0.18µmRequired Design Specifications
Supply voltage 1.2 VVref 0.7 VIref 15µA
Max Supply Sensitivity
1000ppm
Max Temp Sensitivity 10ppm @37 º CMax Power
consumption20uW
BMR -TOPOLOGY USED
BMR- DESIGN CALCULATIONS
Using these we get:
Sweeping to set current, we get
BMR- ACHIEVED SPECIFICATIONSParameter Values
1 Supply (V) 1.2 V
2 Supply Sensitivity (ppm)
611.9
3Temp Sensitivity (ppm @ 37˚C)
1e06 ppm(Iref),.99e06 ppm(Vref)
4 Iref (uA) 15.15
5 Iref with ΔVTHn = 10% 0.02µA
6ΔIref with ΔVTHp = 10%
1.818nA
7 ΔIref with ΔR= 10% 3.585µA
8Minimum Supply Voltage(mV)
646.4
9Maximum Supply Voltage(V)
1.7
Parameter Values10 TCIref (ppm/˚C) 3323
11 TCVref (ppm/˚C) 3202
12 Power Consumption (µW) 50.23
13 Resistor Value (KΩ) 5.67KΩ
Iref- VDD Sweep
Startup transient response Startup time:460.6nsec
Vref- VDD Sweep
Vref= 0.718V
Current sensitivity with supply voltage = 611.9ppm @37˚C
Voltage sensitivity with supply voltage= 9333ppm @37˚C
PSRR of Vref
PSRR of Iref
PSRR of Vref = 40dB
PSRR of Iref = 125e6 mho
Iref changes by 1.818nA for +-10% variation in Vthp
Iref changes by 0.02uA for +-10% variation in Vthn
TCIref of 3323 ppm/ ˚C at 37 ˚C
TCVref of 3202ppm/ ˚C @ 37˚C
BGR TOPOLOGY USED
DIFFERENTIAL AMP STRUCTURE
BGR DESIGN CALCULATIONS
With the above values of L,N,R we observed that the ICTAT and IPTAT fail to cancel out exactly at 37 deg C. So through simulations we have adjusted R,L,N to obtain the desired characteristics.The values obtained areL = 8.5, N=4.84, R= 9.84K
ACHIEVED SPECIFICATIONSParameter Specs obtained
1 Supply (V) 1.2 V
2 Vref (V) 0.698V
3 Supply Sensitivity (ppm) 5213ppm
4 Temp Sensitivity (ppm @ 37C) 0.39ppm
5 Power consumption (uW) 63uW
6 Iref (uA) 14.69uA
7 ΔIref with ΔVTHn = 10% 124.8nA
8 Δ Iref with ΔVTHp = 10% 1.925nA
9 ΔIref with ΔR= 10% 3.1uA
10 Minumum Supply Voltage 901mV
11 Maximum Supply Voltage 2.786V
12 TCIref 0.13ppm/deg C
13 TCVref (ppm) 1.258e-3 ppm/deg C
14 PSRR for Vref 53.2dB
15 PSRR for Iref 2.18e+7 mho
Vref – Voltage Sweep Iref – Voltage Sweep
Vref- Temp Sweep Iref- Temp Sweep
Vref =0.697VIref =14.61uA
700.9mV @ 37.03C 14.69uA @ 37.01C
Vdd min =901mV
Vdd max =2.786VVdd min =904mV
Vdd max =2.788V
TCVref TCIref
Voltage Sensitivity - Vref Voltage Sensitivity - Iref
Temp sensitivity = 0.39ppm Temp sensitivity =4.15ppm
Volt sensitivity = 5213ppm Volt sensitivity = 5229ppm
PSRR for Vref PSRR for Iref
PSRR = 53.2dB
PSRR = 2.18*107 mho
Start up delay
Start up delay = 189ns
Power consumption
Power consumption= 63uW
Δ IREF WITH VTH VARIATION
Δ IREF for 10% variation in Vthn = 124.8nA
Δ IREF for 10% variation in Vthp = 1.925nA
DEVIATION FROM SPECSParameter Specs BMR Specs
ObtainedBMR Specs
ErrorBGR Specs obtained
BGR Specs Error
1 Vref (V) 0.7 0.718V 2.65% 0.698V 0.28%
2Supply
Sensitivity (ppm)
1000 611.9 (Iref) -38.81% 5213 (Vref) 421.3%
3Temp
Sensitivity (ppm @ 37C)
10 1e06 (Iref).99e6 (Vref) - 4.1(Iref)
0.39(Vref) -
4 Iref (uA) 15 15.15 1% 14.69 -2.06%
5Power
consumption (uW)
20 50.23 151.15% 63 215%
CONCLUSIONTemperature sensitivity was observed to be better in
a BGR than compared to a BMR because there is PTAT and CTAT cancellation.
Voltage sensitivity is much better in BMR than in BGR.Supply sensitivity is better with stacked devices , but
since the supply voltage is small, we cannot use cascode topology.
Both BMR and BGR are supposed to work at low frequency. So we used a min value of L = 4*0.18um. This led to a high output impedance and hence lesser voltage sensitivity.
Careful design of a high gain differential amplifier would lead to a much better voltage sensitivity.
Questions??
Thank you…
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