ex2_4b
Post on 08-Dec-2015
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Semiconductor
TRANSCRIPT
Example 2.4b
Calculate the intrinsic carrier density in germanium, silicon and gallium arsenide at 300, 400, 500 and 600 K.
Solution The intrinsic carrier density in silicon at 300 K equals:
3-9
1919
cm 1072.8
)0258.0212.1
exp(1083.11081.2
)2
exp()K 300(
×=×−
×××=
−=
kT
ENNn g
vci
Similarly one finds the intrinsic carrier density for germanium and gallium arsenide at different temperatures, yielding:
Germanium Silicon Gallium Arsenide
300 K 2.02 x 1013 8.72 x 109 2.03 x 106 400 K 1.38 x 1015 4.52 x 1012 5.98 x 109 500 K 1.91 x 1016 2.16 x 1014 7.98 x 1011
600 K 1.18 x 1017 3.07 x 1015 2.22 x 1013
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