p-channel enhancement mode mosfet f pin description
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HY15P03S
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P-Channel Enhancement Mode MOSFET
Pin DescriptionF
•
1
•
S S : SOP-8
HOOYIHOOYI
HOOYI
reserves the right to make changes to improve reliability or manufacturability without notice, andadvise customers to obtain the latest version of relevant information to verify before placing orders.
Ordering and Marking Information
A
P-Channel MOSFET
Note: lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-freerequirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.defines “Green”to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight inhomogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Package Code
HOOYI
HY15P03ÿYYXXXJWW G
6.6
eatures
• -30V/ -15A
RDS(ON)= m Ω (typ.) @ VGS=-10V
Avalanche Rated
• Reliable and Rugged
• Lead Free and Green DevicesAvailable
(RoHS Compliant)
pplications
150901
G : Lead Free Device Date Code Assembly Material
YYXXX WW
Top View of SOP-8
SS
SG
DD
DD
• Power Management in DC/DC Converter
8.2RDS(ON)= m Ω (typ.) @ VGS=-4.5V
-30
120***
-60**
2
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage ±20 V
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25°C -15 A
Mounted on Large Heat Sink
IDM TC=25°C A
TC=25°C -15 ID Continuous Drain Current
TC=70°C -12 A
TC=25°C 3.1 PD Maximum Power Dissipation
TC=70°C 2.0 W
RθJC Thermal Resistance-Junction to Case 40
RθJA Thermal Resistance-Junction to Ambient 75 °C/W
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed L=0.3mH mJ
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Note:** Drain current is limited by junction temperature
Pulsed Drain Current *
*** VD=-24V
* Repetitive rating ; pulse width limiited by junction temperature
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HY15P03S
6.6
HY15P03
-30
74
40
-30
Symbol Parameter Test ConditionsMin. Typ. Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA - - V
VDS= V, VGS=0V - - -1IDSS Zero Gate Voltage Drain Current
TJ=55°C - - -10µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1.0 -3.0 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
Diode Characteristics
VSD Diode Forward Voltage ISD=-15 A, VGS=0V - -0.7 -1.0 V
trr Reverse Recovery Time - - ns
Qrr Reverse Recovery ChargeIDS=-15 A, dlSD/dt=100A/µs
- - nC
-2.0
*
8.0RDS(ON) Drain-Source On-state Resistance
VGS=-10V, IDS= -15 A - mΩ*
VGS= -4.5V, IDS= -10A 10.58.2 mΩ
461
4287
323
16
HY15P03
3
Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted)
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3.0 - Ω
Ciss Input Capacitance - -
Coss Output Capacitance - -
Crss Reverse Transfer Capacitance
VGS=0V, VDS=-15V, Frequency=1.0MHz - -
pF
td(ON) Turn-on Delay Time - 12
Tr Turn-on Rise Time -
td(OFF) Turn-off Delay Time - 75
Tf Turn-off Fall Time
- 37
ns
Gate Charge Characteristics
Qg Total Gate Charge - 90
Qgs Gate-Source Charge - 7.8 -
Qgd Gate-Drain Charge
VDS=-24 V, VGS=-10V, IDS=-15A
- 19.3 -
nC
VDD= -24V, RG=3 Ω,IDS=-15A, VGS=-10V,
Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.
-
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HY15P03S
-
-
-
-
4
Typical
Operating
Characteristics
-VDS - -Drain - Source Voltage (V)
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HY15P03S
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
10
Thermal Transient Impedance
Square Wave Pulse Duration sec
Nor
mal
ized
Effe
ctiv
e Tr
ansi
ent
100
0.01
0.02
0.05
0.1
0.2
Duty = 0.5
Mounted on minimum padR
θJA : 75 oC/WSingle
Power Dissipation
Ptot
-Po
wer
(W)
Tj - Junction Temperature (°C)
Drain Current
Tj - Junction Temperature
-ID -D
rain
Cur
rent
(A)
0 20 40 60 80 100 120 140 1600.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TA=25oC
0 20 40 60 80 100 120 140 1600
2
4
6
8
10
12
14
16
18
TA=25oC,VG=-10V
-ID
- D
rain
Cur
rent
(A)
Safe Operation Area
0.1 1 10 100 5000.1
1.0
10
100
500
1ms
Rds(on)
Limit
TC=25OC
10ms
100us
DC
5
Typical Operating Characteristics (Cont.)
RD
S(O
N) - O
n - R
esis
tanc
e (m
Ω)
Drain-Source On Resistance
-I D - Drain Current (A)-VDS - Drain - Source Voltage (V)
-ID -
Dra
in C
urre
nt (A
)
Output Characteristics
0 5 10 15 20 250
2
4
6
8
10
12
14
16
VGS
=-10V
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HY15P03S
0 1 2 3 4 50
2
4
6
8
10
12
14
16
18
20
-3V
-3.5V
-2V
VGS
= -4.0,-4.5,-10V
VGS
=-4.5V
Gate-Source On Resistance
-VGS - Gate - Source Voltage (V)
RD
S(O
N) -
On
-Res
ista
nce
(mΩ
)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
Nor
mal
ized
Thre
shol
dVo
ltage
-50 -25 0 25 50 75 100 125 1500.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6IDS
=-250uA
2 3 4 5 6 7 8 9 104
6
8
10
12
14
16
18IDS
=-15A
6
Typical Operating Characteristics (Cont.)
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HY15P03S
Drain-Source On Resistance
Nor
mal
ized
On
Res
ista
nce
Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
-IS
-Sou
rce
Cur
rent
(A)
-50 -25 0 25 50 75 100 125 1500.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
RON@Tj=25oC: 6.6mΩ
VGS = -10V IDS = -15A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1
1
10
30
Tj=150oC
Tj=25oC
500
-VDS - Drain - Source Voltage (V)
C -
Cap
acita
nce
(pF)
Capacitance Gate Charge
QG -Gate Charge (nC)
VG
S -
Gat
e-so
urce
Vol
tage
(V)
0 13 26 39 52 65 78 910
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 400
1000
1500
2500
3000
3500
4000
4500
5000Frequency=1MHz
CrssCoss
Ciss
2000
VDS= -24V IDS= -15A
7
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HY15P03S
Avalanche Test Circuit and Waveforms
EAS
VDD
tAV
IAS
VDS
tp VDSX(SUS)
DUT
0.01Ω
VDD
VDSL
IL
RG
tp
Switching Time Test Circuit and Waveforms
td(on) tr td(off) tf
VGS
VDS90%
10%
VDD
RD
DUT
VGS
VDS
RG
tp
HY15P03S
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Package Information
SOP-8
RECOMMENDED LAND PATTERN
UNIT: mm
A
A1
A2
LVIEW A
0.25
SEATING PLANEGAUGE PLANE
1.27
5.74
2.2
2.87
0.6350.8
D
e
EE1
b
SEE VIEW A
c
hX
45°
SEATING PLANE < 4 mils-T-
Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side.
SYMBOL MIN. MAX.1.75
0.10
0.17 0.25
0.25A
A1
cD
EE1ehL
MILLIMETERS
b 0.31 0.51
SOP-8
0.25 0.500.40 1.27
MIN. MAX.INCHES
0.0690.004
0.012 0.0200.007 0.010
0.010 0.0200.016 0.050
0
0.010
1.27 BSC 0.050 BSC
A2 1.25 0.049
0 8 0 8
3.805.804.80
4.006.205.00 0.189 0.197
0.228 0.2440.150 0.157
--
- -
°°°°
HY15P03S
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Application A H T1 C d D W E1 F 330.02.00 50 MIN. 12.4+2.00
-0.0013.0+0.50
-0.20 1.5 MIN. 20.2 MIN. 12.0 0.30 1.75 0.10 5.5 0.05
P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8
4.0 0.10 8.0 0.10 2.0 0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00
-0.40 6.40 0.20 5.20 0.20 2.10 0.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
AB
W
F
T
P0OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
HY15P03S
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Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
11
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HY15P03S
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts)
100 °C 150 °C
60-120 seconds
150 °C 200 °C
60-120 seconds
Average ramp-up rate (Tsmax to TP) 3 °C/second max. 3°C/second max.
Liquidous temperature (TL) Time at liquidous (tL)
183 °C 60-150 seconds
217 °C 60-150 seconds
Peak package body Temperature(Tp)*
See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5°C of the specifiedclassification temperature (Tc)
20** seconds 30** seconds
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Thickness
Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000 <1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package
Thickness Volume mm3
<350 Volume mm3
≥350 <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C
Reliability Test ProgramTest item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ TjmaxPCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C TCT JESD-22, A104 500 Cycles, -65°C~150°C
12
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts)
100 °C 150 °C
60-120 seconds
150 °C 200 °C
60-120 seconds
Average ramp-up rate (Tsmax to TP) 3 °C/second max. 3°C/second max.
Liquidous temperature (TL) Time at liquidous (tL)
183 °C 60-150 seconds
217 °C 60-150 seconds
Peak package body Temperature (Tp)*
See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5°C of the specified classification temperature (Tc)
20** seconds 30** seconds
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Thickness
Volume mm3 <350
Volume mm3 350-2000
Volume mm3 >2000
<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package
Thickness Volume mm3
<350 Volume mm3
≥350 <2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Reliability Test Program
Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245°C HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C TCT JESD-22, A104 500 Cycles, -65°C~150°C
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HY15P03S
Customer ServiceWorldwide Sales and Service: sales@hooyi.cc Technical Support: Technology@hooyi.ccXi’an Hooyi Semiconductor Technology Co., Ltd.East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi'an,China TEL: (86-029) 86685706FAX: (86-029) 86685705E-mail: sales@hooyi.ccWeb net: www.hooyi.cc
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