results from proton-irradiation + “short“ qtc status
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Results from Proton-Irradiation+ “short“ QTC status
Sensor Meeting Tracker-Week 12.07.2001
Frank Hartmann, Christian Piasecki
Optical inspection of all 78 sensors is finished
All Sensors are fine!and compatible to the former results, shown at the last meetings.
Results can be regarded at http:\\www-ekp.uni-karlsruhe.physik.de/~cms/
Electrical-Tests of 32 Sensors finished
• Still problems with „residual“ passivation-layer on the DC-Pads at the „long side“.
• But no problems when we measure the DC-Pads at the „short side“.
Breakdown of the 6054848-Sensor
During first IV-Measurement
ca. 400µA
IV after Breakdown
Did we lost contact to Bias-Ring ?Problem happened during IV curve:
NO movementsNO relais changes
at the simplest and earliest test;with 7 m tip
Solve: as Vienna we started tomeasure with 2 probes
Materials
• Hamamatsu Full Sensor (W6b 4919-39)Thickness: 500 mResistivity: 4.6 kcm
• Hamamatsu teststructures (same batch no. 35-41)
• ST Full Sensor (04439218)Thickness: 500 mResistivity: 5.1 kcm
Irrad. Assembly
Improvements to our IQC-Probestation for measurements at –10°C
Cold bath to fight humidity
The Cooling-Jig
Place for several probes to travel withthe jig, plus a „lid“ to avoid condensation!
Air-Cooler with dry iceSintered copper to havea maximum of surface to transfer minus temperaturefrom dry ice to air
Inlet
Outlet
Proton-Irradiation-Resultsnew dose calculations (p n)
all in 10^14 n(1MeV)/cm^2
Ham. Diode39: Ileak 2,56
Ni 2.6
Ham. FSensor: Ileak 3,8 (difficult-not reliable)
Ni 3,0
ST FSensor: Ileak 0,85
Ni 0,70
Ham. Diode41: Ileak 0,94
Ni 0,72
Ham. Mini41: Ileak 0,95
Ni 0,72
Wanted:
2.5
1.5
(less irrad from cyclotron as calculated)
0.9
31MeV p
33MeV p
Multi-CV Babysensor41 after Irrad
157pF
134Pf
Low dose
Multi-CV Babysensor39 after Irrad
185pF
146pF
High dose
Depletion Voltage and Fluence OLD (shown in Catania)
0 50 100 150 200 250 300
0,0
2,0x1019
4,0x1019
6,0x1019
8,0x1019
1,0x10200 50 100 150 200 250 300
0,0
2,0x1019
4,0x1019
6,0x1019
8,0x1019
1,0x10200 50 100 150 200 250 300
0
1x1017
2x1017
3x1017
4x1017
5x1017
150V
No Fluence
Bias Voltage [V]
CV on Ham. TS - Minisensor
180V
Low Fluence
Ca
pa
cita
nce
-2
220V
High Fluence
Depletion Voltage and FluenceNEW (on HPK minisensors)
CV for HPK 39 (FS+Baby+Diode)
Interstrip capacitance of HPK sensor (1 neighbour)
100 fF 3.2 pF
Interstrip Capacitance (one neighbour) vs. Bias Voltage
after Irradiation
0 200 400 600 800 1000
3,5
4,0
4,5
5,0
5,5
6,0Hamamatsu FS - C
int on strip 335
Cin
t [p
F]
Bias Voltage [V]
0 10 20 30 40 50 60
1,0
1,2
1,4
1,6
1,8
2,0
Interstrip Capacitance on TS H39
Before After irrad. and annealing
Inte
rstr
ip C
ap
aci
tan
ce [p
F]
Interstrip Capacitance on TS 39 after Irradiation (2 neighbours)
Some bad contacts due to residuals of conductive rubber!?!?!
Vbias = 400V
Interstrip Capacitance Baby41(2 neighbours)
600V 900V
Interstrip Resistance vs. Biasvoltage
HPK TS-Baby39 (full dose)
Strip 80-81 at –7°C Strip 88-89 at –5,5°C
Voltage[V] Rint[Mohm] ^2 Voltage[V] Rint[Mohm] ^2
0 26,4 2,72 E-4 0 20,6 2,44 E-4 50 119 7,19 E-4 50 232 2,27 E-3 100 675 5,66 E-4 100 to high ~ E-2 150 to high ~ E-2 200 to high ~ E-2
Conclusion
• Evaluation on minisensor, diode and FS only
• Irradiation with protons is feasible with small bias voltage near to final LHC condition
• The IQC in Karlsuhe is ready with some possible improvements, learned at this system test level
• Many improvements already implemented since Catania
Proposal for the ingot pre-qualification!!
Strip-Values after Breakdown
ca. 0.5nA
Nominal behavior
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