rf power field effect transistor array - nxp semiconductors · 2016. 11. 23. · ds1 r1 z3 z4 z5 c8...
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Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable.The PFP-16 package has had lead-free terminations from its initial release.
MRF9002R2
1RF Device DataFreescale Semiconductor
RF Power Field Effect Transistor ArrayN-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-cies to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications in 26 voltbase station equipment. The device is in a PFP-16 Power Flat Pack packagewhich gives excellent thermal performances through a solderable backsidecontact.
• Typical Performance at 960 MHz, 26 VoltsOutput Power 2 Watts Per TransistorPower Gain 18 dB Efficiency 50%
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc
Total Dissipation Per Transistor @ TC = 25°C PD 4 W
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 150 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case, Single Transistor RθJC 12 °C/W
Table 3. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020 3 240 °C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling andpackaging MOS devices should be observed.
Document Number: MRF9002R2Rev. 6, 7/2005
Freescale SemiconductorTechnical Data
MRF9002R2
1000 MHz, 2 W, 26 VLATERAL N-CHANNEL
BROADBANDRF POWER MOSFET
CASE 978-03PLASTICPFP-16
Figure 1. Pin Connections
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
(Top View)
9
N.C.
GATE1
N.C.
GATE2
N.C.
GATE3
N.C.
DRAIN 1−1
DRAIN 1−2
DRAIN 2−1
DRAIN 2−2
N.C.
DRAIN 3−1
DRAIN 3−2
N.C.
N.C.
Note: Exposed backside flag is sourceterminal for transistors.
16
1
Freescale Semiconductor, Inc., 2005. All rights reserved.
2RF Device Data
Freescale Semiconductor
MRF9002R2
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
On Characteristics
Gate Threshold Voltage(VDS = 10 Vdc, ID = 20 µAdc)
VGS(th) 2.4 4 Vdc
Gate Quiescent Voltage(VDS = 26 Vdc, ID = 25 mAdc)
VGS(Q) 3 5 Vdc
Drain-Source On-Voltage(VGS = 10 Vdc, ID = 0.1 Adc)
VDS(on) 0.3 Vdc
Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system)
Common-Source Amplifier Power Gain @ P1dB(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
Gps 15 18 dB
Drain Efficiency @ P1dB(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
η 35 50 %
Input Return Loss @ P1dB(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
IRL - 15 - 9 dB
Power Output, 1 dB Compression Point(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)
P1dB 34 37 dBm
Output Mismatch Stress(VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA, f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequencyof Tests)
Ψ
No Degradation In Output Power
MRF9002R2
3RF Device DataFreescale Semiconductor
Figure 2. MRF9002R2 Broadband Test Circuit Schematic
RF1
OUTPUTZ1 Z2
VGS1
C3
C2
DUT
VDS1
Z3R1
Z4 Z5
C8
C4
C5
C1
L1L4
C6
C7
C16
C14
RF1
INPUT
RF2
OUTPUT
RF3
OUTPUT
RF2
INPUT
RF3
INPUT
VGS2VDS2
VGS3VDS3
L2L5
L3L6
R2
R3
Z6 Z7 Z8
Z9 Z10
C10C9
C18
C13
Z11 Z12 Z13
Z14 Z15
C12C11
C17
C15
+ +
++
++
Table 5. MRF9002R2 Broadband Test Circuit Component Designations and ValuesDesignators Description
C1-C6 33 pF Chip Capacitors (0805)
C7-C12 1.0 µF, 35 V Tantalum Capacitors, Kemet
C13 8.2 pF Chip Capacitor (0805)
C14, C15 10 pF Chip Capacitors (0805)
C16, C17 2.7 pF Chip Capacitors (0805)
C18 3.3 pF Chip Capacitor (0805)
L1-L6 12 nH Chip Inductors (0805)
R1-R3 0 Chip Resistors (0805)
Z1, Z11 1.16 x 28.5 mm Microstrip
Z2, Z7, Z12 0.65 x 5.6 mm Microstrip
Z3, Z8, Z13 0.65 x 2.6 mm Microstrip
Z4, Z14 1.16 x 19.5 mm Microstrip
Z5, Z15 1.16 x 17.5 mm Microstrip
Z6 1.16 x 12.9 mm Microstrip
Z9 1.16 x 27.2 mm Microstrip
Z10 1.16 x 4.3 mm Microstrip
PCB Etched Circuit Board
Raw PCB Material Rogers RO4350, 0.020″, 2.5″, x 2.5″, r = 3.5
Bedstead Copper Heatsink
4RF Device Data
Freescale Semiconductor
MRF9002R2
Figure 3. MRF9002R2 Broadband Test Circuit Component Layout
Pin 1
MRF9002960 MHz
RF1 INPUT
Rev. B
RF1 OUTPUT
RF2 INPUTRF2 OUTPUT
VGS1
VGS2
VDS1
VDS2
C1 C2
C8C16
C7
C9 L4
C10
L5
C14
L1
L2
C3
R1
R2
C13
R3
C4C18
L3
C15L6
C11C17
C12
C5 C6
RF3 INPUT RF3 OUTPUT
VGS3 VDS3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductorsignature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will haveno impact on form, fit or function of the current product.
MRF9002R2
5RF Device DataFreescale Semiconductor
TYPICAL CHARACTERISTICS
16
15
35
0
17
Gps
Pout
VDS = 26 Vdc
IDQ = 25 mA
f = 960 MHz
Single−Tone
Gps
, P
OW
ER
GA
IN (
dB)
33 19.25
31 19
29 18.75
27 18.5
25 18.25
23 18
21 17.75
19 17.5
17 17.25
19.5
2 4 6 8 10 12 14
985
25
41
925
10 dBm
VDS = 26 Vdc
IDQ = 25 mA
Single−Tone
Pou
t, O
UT
PU
T P
OW
ER
(dB
m)
39
37
35
33
31
29
27
975965955945935
15 dBm
Pin = 20 dBm
Pin, INPUT POWER (dBm)
Figure 4. Output Power and Power Gainversus Input Power
Pou
t, O
UT
PU
T P
OW
ER
(dB
m)
Pout, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
Gps
, P
OW
ER
GA
IN (
dB)
30
19.9
20.3
22
−32
−28
Gps
IMD
Pout = 2 W (PEP)
IDQ = 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 6. Power Gain and Intermodulation Distortionversus Supply Voltage
Gps
, P
OW
ER
GA
IN (
dB)
20.2 −29
20.1 −30
20 −31
29282726252423
INT
ER
MO
DU
LAT
ION
DIS
TO
RT
ION
(dB
c)IM
D,
40
−65
−20
5
25 mA
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm) PEP
Figure 7. Intermodulation Distortion versusOutput Power
INT
ER
MO
DU
LAT
ION
DIS
TO
RT
ION
(dB
c)IM
D,
50 mA
75 mA
100 mA
−25
−30
−35
−40
−45
−50
−55
−60
353025201510
40
−70
0
10
3rd Order
VDS = 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm)
Figure 8. Intermodulation Distortion Productsversus Output Power
INT
ER
MO
DU
LAT
ION
DIS
TO
RT
ION
(dB
c)IM
D,
−10
−20
−30
−40
−50
−60
3530252015
5th Order
7th Order
f, FREQUENCY (MHz)
Figure 9. Output Power versus Frequency
40
15
23
10
100 mA
VDS = 26 Vdc
f = 960 MHz
Single−Tone
22
21
20
19
18
17
16
15 20 25 30 35
25 mA
75 mA
50 mA
6RF Device Data
Freescale Semiconductor
MRF9002R2
TYPICAL CHARACTERISTICS
Crss
Ciss
30
2
12
22
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 10. Capacitance versus Drain Source Voltage
Coss
23 24 25 26 27 28 29
3
4
5
6
7
8
9
10
11
C,
CA
PA
CIT
AN
CE
(pF
)
MRF9002R2
7RF Device DataFreescale Semiconductor
Figure 11. Series Equivalent Source and Load Impedance
fMHz
ZsourceΩ
ZloadΩ
925
960
985
4.5 + j13.3
4.1 + j15.8
4.3 + j15.3
23.4 + j9.2
23.2 + j10.4
23.0 + j11.1
VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP
f = 925 MHz
Zo = 50 Ω
f = 925 MHz
985 MHz
985 MHz
fMHz
ZsourceΩ
ZloadΩ
925
960
985
6.0 + j12.3
5.8 + j16.5
5.9 + j14.3
19.7 + j27.8
22.0 + j23.9
22.5 + j25.4
VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP
fMHz
ZsourceΩ
ZloadΩ
925
960
985
4.3 + j12.2
3.9 + j15.9
4.3 + j14.0
23.1 + j6.5
22.8 + j8.4
22.6 + j9.3
VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP
Transistor 2
Transistor 3
Transistor 1
Zsource
Zload
f = 925 MHz
Zo = 50 Ω
f = 925 MHz
985 MHz
985 MHz
f = 925 MHz
985 MHz
Zsource
T 1
T 2
T 1
f = 925 MHz
985 MHz
Zload
T 2T 3
T 3
TRANSISTORS 1 and 2 TRANSISTOR 3
Zsource
Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zsource = Test circuit impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Zload
Zsource
8RF Device Data
Freescale Semiconductor
MRF9002R2
NOTES
MRF9002R2
9RF Device DataFreescale Semiconductor
NOTES
10RF Device Data
Freescale Semiconductor
MRF9002R2
NOTES
MRF9002R2
11RF Device DataFreescale Semiconductor
PACKAGE DIMENSIONS
CASE 978-03ISSUE C
DIM MIN MAX
MILLIMETERS
A 2.000 2.300
A1 0.025 0.100
A2 1.950 2.100
D 6.950 7.100
D1 4.372 5.180
E 8.850 9.150
E1 6.950 7.100
E2 4.372 5.180
L 0.466 0.720
L1 0.250 BSC
b 0.300 0.432
b1 0.300 0.375
c 0.180 0.279
c1 0.180 0.230
e 0.800 BSC
h −−− 0.600
0 7
aaa 0.200
bbb 0.200
ccc 0.100
NOTES:1. CONTROLLING DIMENSION: MILLIMETER.2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLDPROTRUSION. ALLOWABLE PROTRUSION IS0.250 PER SIDE. DIMENSIONS D AND E1 DOINCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION IS 0.127 TOTAL IN EXCESS OF THEb DIMENSION AT MAXIMUM MATERIALCONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.
BOTTOM VIEW
D1
E2
16
98
1
e/2
SBMbbb C
D
X 45
h
e14
x
E1
8X E
A2A
SEATING
PLANE
DATUM
PLANE
GAUGE
L1
PLANE
1.000
LW
W
0.039
A1
ccc C
DETAIL Y
SECT W-W
c c1
b1
b
ÇÇÇÇÇÇÉÉÉÉ
SAMaaa C
A
B
H
C
Y
PFP-16PLASTIC
12RF Device Data
Freescale Semiconductor
MRF9002R2
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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved.
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Document Number: MRF9002R2Rev. 6, 7/2005
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