sige bicmos device modeling murty, sheridan,ahlgren, haramehicum users group meeting (bctm2002) 1...
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MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
Evaluation of HiCUM for Modeling DC, S-parameter and Large-Signal Characteristics of SiGe HBTs
M.R.Murty, D.Sheridan, D.Ahlgren and D.HarameCommunications R&D Center
IBM MicroelectronicsEssex Junction, VT
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
•Transistor Structures used for Parameter Extraction:
(0.32, 0.48, 0.64, 0.96) m x 8.4 m with a CBEBC layout
•Scaling by TRADICA and Models extracted on structures with a CBE layout
•Simulations and Optimizations done in ADS2001 & ADS2002.
•Technology Details:High-Speed and High-Breakdown Versions with ~47GHz and 27 GHz fT and BVCEO of ~3.5V and 5.5V.
Model Extraction Methodology and Technology Details
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
Parameter Extraction
•Base Resistance Ring-Emitter Structures (several W’s and 2 L’s)•Emitter Resistance Modified Open-Collector Method •Collector Resistance Test Structures•Capacitances Cold S-Params + Large area monitors
•Avalanche Parameters: Ib vs Vbc Characteristics•Current Parameters Gummels and Output Curves
•Transit Time Parameters: Test Transistors (several W’s and one long L)
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device ModelingIc
& I
b (
A)
Gummel Curves and Forward Gain -0.32 um x 16.8 um, HB device
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
Output Curves -0.32 um x 16.8 um, HB device
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
S-Parameter Results
• Bias Points: Vbe = 0.82 V, 0.90 V, 0.93 V and Vce = 2 V. (1 below ft peak, one at peak ft and one past ft peak)
• Frequency range: 2-40 GHz.
• Optimizations were done using Y-parameters (in ADS).
• Ft-Ic: Vcb = -0.3, 0, 1.0, 2.0, 3.0 V
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
Ph
ase(
S11
)
S11 -0.32 um x 16.8 um, HB device
o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model
S21 -0.32 um x 16.8 um, HB device
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model
S12 -0.32 um x 16.8 um, HB device
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model
S22 -0.32 um x 16.8 um, HB device
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model
|H21| and MAG/MSG -0.32 um x 16.8 um, HB device
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
o Measurement__ Model
(Vcb = -0.3, 0, 1, 2, 3 V)
|fT vs Ic -0.32 um x 16.8 um, HB device
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
Intermodulation Distortion Results
• Measurements done using ATN Load-pull system and Simulations Using Harmonic Balance
• 2-tone Simulations and Intermodulation Distortion with 50 termination, Sheridan, Murty and others CMC,April 2001 (PortoRico) & present work
• 1-tone Simulations and harmonic Distortion with a 50 termination Schroter et.al., IEEE TED, 47, pp1529-1535 (2000)
• 2-tone Intermodulation Distortion with matched load and source Murty et.al., (To be published)
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device ModelingP
out,
IM
3, I
M5
(dB
m)
Ic &
Ib
(mA
)
o Vbe = 0.9109 V, Vce= 2 V,f= 900 MHz, =0.1 MHz
|Pout, IM3, IM5, Ic and Ib -0.32 um x 16.8 um, HB device
__ Hicum simulations using Harmonic Balance
__ Hicum
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
Conclusions
• Hicum Model is developed for a SiGe process and good fits demonstrated for DC, S-parameter and Large-signal characteristics.
• The simulations were done in ADS2001/02 and the model implementation is found to be robust. (at least at the device level)
MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)
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SiGe BiCMOS Device Modeling
ACKNOWLEDGEMENTS
Thanks to M.Schroter, K.Newton, W.Ansley for many useful discussions
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