spectrum slicer: spectrum slicer: curtis mayberry and david giles narrowband micromechanical...
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Spectrum Slicer:
Curtis Mayberry and David Giles
Narrowband Micromechanical Resonator Filters for RF Applications
Georgia Tech, October 8th, 2012ECE 6422—Interface IC Design for MEMS and
Sensors
*(Picture from [Piazza et al. 2007])
Problem Statement Motivation:
Rapid prototyping of RF Transceivers Efficient spectrum use Low cost, small area, fully integrated
RF Front-end Problem: RF Front-ends are
currently specially designed for a given application Considerable design effort for each
new design Conventional filters are not integrable
Objective: Design a reconfigurable RF front-end that can be used for rapid prototyping and development of RF Transceivers.
Specifically we are going to focus on the filtering and downconversion functions
Super-heterodyne Transceiver Architecture
Conventional Resonators Not integrable – large offchip size
Not tunable and only a single center frequency is allowed per die
Piezoelectric Crystals (Quartz widely used)
Other Materials including ceramic piezoelectric materials for low cost applications
Great Temp Stability – Low TCF(10 ppm/oC)
Low Cost
Rmot = 40-100 Ω
Low frequency f < 200 MHz Surface Accoustic Wave (SAW)
Rayleigh and longitudinal Propagation on the surface of a piezoelectric substrate
Good Temperature Stability
Good Q: up to 7000
Current Cell standards designed
assuming available SAW filtering
Technology
Thin Film Bulk Acoustic Resonators (FBAR) (Thickness-extensional)
[Shim et al. 2005] [Ueda et al. 2005] • Can have fairly high Qs (1000s)
and high electromechanical coupling (d33 coefficient)
• But—only 1 frequency per wafer• And thickness dimension cannot
be as accurately fabricated as lateral dimensions currently
• 1.94 GHz Tx filter based on FBARs
• Monolithic 7 FBAR ladder filter for a different Tx filter (1.9 GHz)
Capacitive Transduction
Require a charge pump [Pourkamali et al 2004] Disk Resonators
150 MHz Q-F product: 6.8*1012 (Vacuum) Q = 45700 (Vacuum), 25900 in air High motional Resistance: 43.3 kΩ
(Vacuum While reducing the capacitive gap
size reduces the motional resistance, the sensor output becomes nonlinear below 35nm
• Low Mechanical coupling• [Pourkamali et al 2007]• Sibar
– Advantages• High Q: 17300 (765 MHz, 5th
resonance mode)• Potential CMOS integration• Requires a charge pump• Reduced motional Resistance
with larger transduction area• High motional Resistance: 23.7
kΩ
Piezoelectric Transduction
• AlN-on-Silicon • 99.8 MHz fo
• Q = 3500• Rm = 35 O
[Tabrizian & Ayazi 2011] [Piazza et al. 2006]
• Al-AlN-Pt Stack
• 224 MHz fo
• Q = 2400• Rm = 56 O
[Nguyen et al. 2011]
• Capacitive/Piezo Combination
• Goal: High Q + Low Rm
• fo = 50 MHz• Q = 12,750
Bandpass Filters Using Resonators
[Zuo et al. 2010]
[Nguyen et al. 2006]
[Pourkamali et al. 2003]
[Verdu et al. 2006]
Our Solution
Channel Select filter bank enables reconfigurable, fully integrated direct downconversion.
NoiseFirst Stages most important
Filter ImplementationResonators• Piezoelectric-transduction for low motional
resistance• Lateral-mode for lithographically-defined resonance
frequency• AlN-on-Si/Diamond for Q enhancement (mass loading
versus decreased damping)• Sidewall-transduction—greater kt2
Electrical coupling—explore several possibilities Intrinsic capacitively-coupled—potential for small
device footprint Active cascading (amplifier stages between resonators)
—Q amplification may be necessary, but increased power dissipation and chip area may be too much
Ladder topology—for higher out-of-band rejection
Phase Noise
Noisy Oscillator waveform
ideal
noisy
Circuit SuggestionsLocal Oscillator
Challenge: Our frequency (~900 MHz) is approaching the bandwidth of this design (~900 MHz) at max gain
Noisy Oscillator Spectrum
ideal noisy
“Reciprocal Mixing”
Broadband: 960 MHz BW (MAX,880 @maxP)Low Power: 9.4 mW(1.5 v design)Low Phase Noise: -92 dBc/Hz and
Circuit Suggestions
Wideband LNA[Razavi 2010]50 MHZ to 10GHzNF = 2.9 to 5.7 dB
Large width to handle flicker noiseFor lower frequency bands
LNA
Mixer
Gilbert Cell
Local Oscillator
• Higher Bandwidth TIA Sustaining Amp• Add current amplifier pre-amp• Noise: Major contributing factor is M1 and M4 Current Noise:
Project 2 ObjectivesWe will design and simulate
1. At least two narrowband piezoelectric resonator-based filters, operating with center frequencies around 900 MHz
Good out-of-band rejection Low insertion loss Low motional impedance
2. A resonator-based local oscillator at 900 MHz
Low phase noise Good TCF Good drive capability Low Power
Sample DatasheetFilter Specifications Value Oscillator Specifications Valu
e
Center Frequency (MHz) 880/920
Frequency (MHz) 900
3dB Bandwidth (kHz) 1000 Power Dissipation (mW) 8
20dB Shape Factor 1.5 Phase Noise (1 kHz offset) (dBc/Hz)
-90
40dB Shape Factor 3 Phase Noise Floor (dBc/Hz) -140
Insertion Loss (dB) 4 Capacitive Drive Capability (pF)
2
Passband Ripple (dB) 0.5 Settling Time (ms) 2
Motional Impedance (Ohms)
200 Temperature Sensitivity (ppm/C)
20
• Small die area desired for both components <1mm2
• Atmospheric packaging is more economical but vacuum packaging enhances Q.
• Monolithic Integration for economic viability and use in RF FPAA
Simultaneously meeting Rm, IL, and SF specs will be challenging!!
References[1] B. Razavi, RF Microelectronics, Second Edition, Prentice Hall 2011.
[2] R. Aigner, “Innovative RF Filter Technologies: Gaurdrails for the Wireless Data Highway,” Microwave Product Digest. June 2007.
[3] S. Pourkamali, G. K. Ho, and F. Ayazi, “Low-impedance VHF and UHF capacitive silicon bulk acoustic wave resonators - Part I: Concept and Fabrication” IEEE Transactions on Electron Devices, May 2007, Vol. 54, No. 8, Aug. 2007, pp. 2017-2023.
[4] S. Pourkamali, G. K. Ho, and F. Ayazi, “Low-impedance VHF and UHF capacitive silicon bulk acoustic wave resonators - Part II: Measurement and Characterization,” IEEE Transactions on Electron Devices, Vol. 54, No. 8, Aug. 2007, pp. 2024-2030.
[5] Z. Hao, S. Pourkamali, and F. Ayazi, “VHF Single Crystal Silicon Elliptic Bulk-Mode Capacitive Disk Resonators; Part I: Design and Modeling,” IEEE Journal of Microelectromechanical Systems, Vol. 13, No. 6, Dec. 2004, pp. 1043-1053.
[6] S. Pourkamali, Z. Hao, and F. Ayazi, “VHF Single Crystal Silicon Elliptic Bulk-Mode Capacitive Disk Resonators; Part II: Implementation and Characterization,” IEEE Journal of Microelectromechanical Systems, Vol. 13, No. 6, Dec. 2004, pp. 1054-1062.
[7] H. Miri Lavassani, R. Abdolvand, and F. Ayazi, “A 500MHz Low Phase Noise AlN-on-Silicon Reference Oscillator,” Proc. IEEE Custom Integrated Circuits Conference (CICC 2007), Sept. 2007, pp. 599-602.
[8] H.M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, and F. Ayazi, “A 76dBOhm, 1.7 GHz, 0.18um CMOS Tunable Transimpedance Amplifier Using Broadband Current Pre-Amplifier for High Frequency Lateral Micromechanical Oscillators,” IEEE International Solid State Circuits Conference (ISSCC 2010), San Francisco, CA, Jan. 2010, pp. 318-320
[9] B. Razavi, “Cognitive Radio Design Challenges and Techniques,” IEEE Journal of Solid-State Circuits, vol. 45, pp.1542-1553, Aug. 2010.
[10] J. Garrido, “Biosensors and Bioelectronics Lecture 10,”Walter Schottky Institut Center for Nanotechnology and Nanomaterials. http://www.wsi.tum.de/Portals/0/Media/Lectures/20082/98f31639-f453-466d-bbc2-a76a95d8dead/BiosensorsBioelectronics_lecture10.pdf
References (continued)[11] S. Pourkamali, R. Abdolvand, and F. Ayazi, “A 600kHz Electrically Coupled MEMS Bandpass Filter,” Proc. IEEE International Micro Electro Mechanical Systems Conference (MEMS‘03), Kyoto, Japan, Jan. 2003, pp. 702-705.
[12] R. Tabrizian and F. Ayazi, "Laterally Excited Silicon Bulk Acoustic Resonator with Sidewall AlN," International Conference on Solid-State Sensors, Acutators and Microsystems (Transducers), Beijing, China, June 2011.
[13] C. Zuo, N. Sinha, G. Piazza, “Very High Frequency Channel-Select MEMS Filters based on Self-Coupled Piezoelectric AlN Contour-Mode Resonators”, Sensors and Actuators, A Physical, vol. 160, no. 1-2, pp. 132-140, May 2010.
[14] G. Piazza, P.J. Stephanou, A.P. Pisano, “Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators”, Journal of MicroElectroMechanical Systems, vol. 15, no.6, pp. 1406-1418, December 2006.
[15] Li-Wen Hung; Nguyen, C.T.-C.; , "Capacitive-piezoelectric AlN resonators with Q>12,000," 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), pp.173-176, 23-27 Jan. 2011.
[16] Sheng-Shian Li; Yu-Wei Lin; Zeying Ren; C.T.-C. Nguyen; , "Disk-Array Design for Suppression of Unwanted Modes in Micromechanical Composite-Array Filters,". Istanbul. 19th IEEE International Conference on Micro Electro Mechanical Systems, 2006, pp.866-869, 2006.
[17] Dongha Shim; Yunkwon Park; Kuangwoo Nam; Seokchul Yun; Duckhwan Kim; Byeoungju Ha; Insang Song, "Ultra-miniature monolithic FBAR filters for wireless applications," Microwave Symposium Digest, 2005 IEEE MTT-S International, pp. 4 pp., 12-17 June 2005.
[18] Ueda, M.; Nishihara, T.; Tsutsumi, J.; Taniguchi, S.; Yokoyama, T.; Inoue, S.; Miyashita, T.; Satoh, Y.; , "High-Q resonators using FBAR/SAW technology and their applications," Microwave Symposium Digest, 2005 IEEE MTT-S International, pp. 4 pp., 12-17 June 2005.
[19] Gianluca Piazza, Philip J. Stephanou, Albert P. Pisano, One and two port piezoelectric higher order contour-mode MEMS resonators for mechanical signal processing, Solid-State Electronics, Volume 51, Issues 11–12, November–December 2007, Pages 1596-1608.
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