spice model of 2sa1680 in spice park
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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1680
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
TRANSISTOR MODEL
PSpice model
parameter Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Early Voltage Characteristic
Reverse
Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
VAR
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward Early Voltage Characteristic
Forward
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
C-B Capacitance Characteristics E-B Capacitance Characteristics
Measurement
Simulation
Measurement
Simulation
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Q1
Q2SA1680
0
V1
5Vdc
I1
0Adc
IC(Q1)
-1.0mA -5.0A
IC(Q1)/ IB(Q1)
10
100
5.0
500
Transistor hFE-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
10
100
1000
0.001 0.01 0.1 1 10
- IC(A)
hF
E
Measurement
Simulation
Comparison Graph
Ic(A) hFE
Error(%) Measurement Simulation
-0.001 200.000 196.818 -1.591
-0.002 200.000 196.753 -1.624
-0.005 200.000 196.668 -1.666
-0.010 200.000 196.603 -1.699
-0.020 197.000 196.504 -0.252
-0.050 190.000 193.958 2.083
-0.100 188.000 189.885 1.003
-0.200 180.000 181.965 1.092
-0.500 155.000 158.984 2.570
-1.000 120.000 122.061 1.718
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
I1
0Adc
F1
F20
Q1
Q2SA1680
VC
IC(Q1)
-1.0mA -5.0A
V(Q1:c)
-10mV
-10V
VCE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.01
0.1
1
10
0.001 0.01 0.1 - IC(A)
- V
CE
(SA
T)
(V)
Measurement
Simulation
Comparison Graph
IC(A) VCE(sat)
Error(%) Measurement Simulation
-0.001 -0.025 -0.025 0.000
-0.01 -0.023 -0.023 0.000
-0.1 -0.045 -0.046 2.222
-1 -0.300 -0.301 0.333
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Q1
Q2SA1680
I1
0Adc
0
VC
F1
F20
IC(Q1)
-1.0mA -5.0A
V(Q1:b)
-10mV
-10V
VBE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.01
0.1
1
10
0.001 0.01 0.1 1
- IC(A)
- V
BE
(SA
T)
(V)
Measurement
Simulation
Comparison Graph
IC(A) VBE(sat)
Error(%) Measurement Simulation
-0.001 -0.600 -0.621 3.500
-0.01 -0.660 -0.687 4.091
-0.1 -0.740 -0.767 3.649
-1 -0.970 -0.978 0.825
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Time
20.8us 21.0us 21.2us 21.4us 21.6us 21.8us
-IB(Q1) -IC(Q1)
0A
0.5A
1.0A
1.5A
Switching Characteristics Circuit simulation result
Evaluation circuit
Simulation result
Measurement Simulation %Error
tstg (us) 0.300 0.292 -2.667
tf (us) 0.100 0.098 -2.000
L1
50nHR1
50Q1
Q2SA1680
L2
50nHR2
97
R3
30
V1
TD = 1us
TF = 15nsPW = 20usPER = 50us
V1 = -2
TR = 15ns
V2 = 6
0
V2
-30
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Q1
Q2SA1680
0
I1
0Adc
V1
5Vdc
V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
IC(Q1)
0A
-0.4A
-0.8A
-1.2A
-1.6A
-2.0A
Output Characteristics
Circuit Simulation Result
Evaluation Circuit
IB=2mA
4mA
6mA
10mA
15mA
20mA
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