traction inverterl9502b / l9502 isolated gate driver for traction inverter 5 • 15a driver...
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Traction Inverter
ST New Solutions
System Block diagram 2
• SPC58NN
• GTM V3 for fully programmable and flexible
timer system designed to unload the CPU
• SAR ADC & Σ-Δ ADC support Software
Resolver in evaluation
• SBC L9396
• Multiple Power Supply IC
• SIC/ IGBT
• 750V SiC MOSFETs
Gen 2 High Voltage Product Family
• 1200V SiC MOSFETs
Gen 2 High Voltage High Performance
Product
• L9502
• Single isolated Gate Driver (6kV)for TRACTION
With protection, diagnostics and communication
• Designed for ISO26262 compliance
• Kit Solution approach
LVBAT
VCUVoltage
regulator
Power supply protection
Can interface
Analog input
SPC58
VDD-HSVDD-LS
SPIINTWDIRST
ERROR
Driver temp*3Phase current UVW
Power supply
protectionHVBAT
ASC
SPI
Gate signal
Motor temp
Currentsensor
Over current protection
Voc
Vref
Buffercircuit
Exc+Exc-
S1S2S3S4
HV
conn
ecto
r
U V W
Supplymonitor
VB
STV
CC
VC
C5
VP
RE
RE
G
VCORE
VCC5
VDD30VCC
VCC
Isolate
Low voltage
High voltage
Boost
L9396
Flyback
Three-phase bridgeSIC Mosfet & IGBT
InverterTemp
Sensor
Tsen
Gate signal
VDD-HSVDD-LS
Resolver & Temp sensor
conn
ector
L9502*6Capacitive Isolation
Phase current UVW
Isen
Digital input Air bagASC
VDD30
M
HV
conn
ecto
r
conn
ector
Ain
FSNASC
Backup PowerBrake
DISADC_OUT
AD
C_O
UT
H-bridge
VNHD7008
/
VNHD7012
Parking locker
IGBT: STGYA120M65DF2AG/
STG200M65F2D8AG
SiC module: ADP86012W2/ ADP50075W2
ST Automotive Microcontroller 10.03.2020
3
Debug
JTAG
Nexus
Memory Protection Unit
Crossbar Switch
6M
4x 64k
FLASH
64K
SRAM
3*
LIN
Fle
x
4*D
SP
I
1* SENT
45
*DS
PI
49
* L
INF
lex
MEMU
64K
SRAM
HSM
1* PSI5
ASILDSEooC
1* SENT
4*
CA
N-F
D
4*
MC
AN
1* PSI5
Product / Application Specific Memory ConnectivitySystem / Platform
supervisor
˙˙˙
ADC2xSAR12
1xSAR10
3xΣΔ
˙˙˙
ADC2xSAR12
1xSAR10
3xΣΔ
1 * PIT 1 * PIT CRCCRC TSENS
INTCPower Architecture™
e200z4d
VLE
INTC
STM
SWT
16k-i
Cache
FPU
CMPU
128k-dTCM
STM
SWT
128k-dTCM
32k-iTCM
32k-iTCMLSP
Power Architecture™
e200z4d
16k-i
Cache
CMPU
8k-d
Cache
VLE FPU
Periph.
Bridge
Memory Protection Unit
Crossbar Switch
1* PSI5-S
FMPLL
IRC
x21 LS
GTM48x IC
96x OC
5x MCS
1*
Eth
ern
et
Zip
wir
e
SIP
I
32
eD
MA
1*F
lexR
ay
64
eD
MA
Periph.
Bridge
Cal Bus
1*I
2C
Core
• 3x 200 MHz Power Architecture™ ISA e200z4d Core (VLE)• Dual Issue Core with Floating Point Unit &
LSP(DSP)• 3x (16k-Instruction Cache, 8k-Data
Cache)• 3x (32k Local i-RAM, 128k Local d-RAM) • 2x Lock Step configuration
Memory
• 6M byte RWW Flash with ECC • +4x64k+2x16k Data Flash with ECC
• 512k RAM (128k SRAM, 384k Local d-RAM) with ECC• +61k SRAM on Timer Module• +32k Overlay RAM
I/O
• Generic Timer Module (High-End Version)
• Dual Channel FlexRay (10MB/s), 128 buffers
• 7 x (FD)M-CAN, 1 x (FD)M-TTCAN
• 7 x LINFlex, 8 x DSPI including 2 x μSB
• 1 x Ethernet, 1 x I2C
• 15 x SENT, 2 x PSI5, 1 x PSI5-S
• 61/84 channel ADC (QFP176/BGA292)• 4 SAR ADC, 12-bit, TUE ±4LSB• 1 Supervisor ADC, 12-bit, TUE ±4LSB• 3 SAR ADC, 10-bit, TUE ±1.5LSB• 6 Σ-Δ ADC with OSR x32-64
System
• Security Module (HSM)
• FM-PLL
• MPU
• AMU
• 96 Channel eDMA Controller
• 2 x CRC Unit
• Fault Collection & Control Unit (incl. error pin)
• 8 x PIT
• 1x LFAST (Interprocessor bus)
• Nexus Class 3+
• EBI only for Calibration (High speed debug interface)
• Designed for eLQFP176, LFBGA292 and KGD
8k-d
Cache
LSP
FCCU
ADCQ
SPC58 xN - BerninaSuperset Block Diagram
Qualified
4
FAULT
WDTDIS
Voltage
Monitor
Wake-up
Monitor
IGN
Boost
Controller
9V
300mA
2MHzGNDBST
BSTSW
VBG
VBM
VBST
CPCharge Pump
GN
DA
ResetRESET
GN
D1
Control & Logic
Blocks
SPI
Ctrl/
Status
Reg.
Temp
Mon
Oper
Modes
Fail-
Safe OpFSN
WD
CSN
SDISDO
CLK
Int. analog
3V3 supply
Int. digital
3V3 supply
POR &
Osc.
Buck
6.5V / 7.2V
1000mA
465KHz
BCKSW
VPREREG
LDO VCC5
5.0V
250mA VCC5
LDO VCC
3.3V / 5.0V
100mA VCC
VCCSEL
VCORE
0.8V / 3.3V
1000mA
Buck w/ext FET
500mA
Lin w/ext. FET
VCOREFDBK
Fail Safe
FET
HS predr
Pump Motor FET
HS+LS pre driver
(PWM control)
PD
S
VDBATTWSS / TrackRegRSU0H/L
WS
O0
WS
O1
WS
O2
WS
O3
AI[0..4]
HV Mux +
ADC Converter
Battery protected
switch
VB VB_SW
Decoding
GCORE
VC1 VC2
PD
G
VDSVDG
SCORE
System
Voltages
LS GPO driver
(PWM control)
GPOD0
Voltage
regulation
Motor turn
counter in Low
Power Mode
VC3 VC4
I_CORE_SH
I_CORE_SL
VCORE
PRN
RSU1H/LRSU2H/LRSU3H/L
PR
S
PR
G
PR
I
PD
I PDBATT
• Boost Converter, 9V, up to 0.3A - 2MHz with spread spectrum
• Buck Converter, 6.5V/7.2V, up to 1.0A – 465KHz with spread
spectrum
• LDO VCC5 (5V +/-2%, 250mA), LDO VCC (3.3V / 5V +/-2%,
100mA), VCORE (0.8V / 5V +/-2% - µC core supply, max
1000mA in switching mode, max 750mA in linear mode)
• 4 WSS regulated interface /2 tracking regulators (120mA)
• Integrated 10-bit ADC
• HS pre-drivers for fail safe relay and for motor pump
• Configurable Watchdog (Time-out / Window / Periods) &
configurable Fail-Safe Functionality
• Fail-Safe Output (FSN), Wake-up input
• Voltage monitoring UV/OV on all regulated rails
• Temp. monitoring and Thermal Shutdown
• Commercial samples : available
• In production
Technical information
Timing information
Key Value• Designed for ISO26262 compliance
• Flexible solution to 3 configurable voltage rails
• Boost - Buck topology for low battery functionality for Start/Stop systems
• BOM selection optimized on output current needs
• Low emission design
TQFP64EP
Application Note
Demo board w/ GUI
Safety Manual
FMEDA / DFA
Automotive Multiple Power Supply IC
SBC L9396
L9502B / L9502Isolated Gate Driver for Traction Inverter
5
• 15A driver sink/source current capability
• Miller clamp
• Advanced Diagnostic and Protection
• 10-bit A/D Converter with 2 exteranl inputs
• BRAKE pin with programmable safe state
• 5MHz SPI interface with enhanced safety
• Output flyabck voltage 23V (-5V 18V; -8V 15V) on L9502
Single channel isolated gate driver
AEC-Q100 Grade 1
ASIL D systems ready
6kV galvanic isolation
Flyback controller on L9502
IGBT
In development
Is
ol
at
io
n
Driver Controller
(Flyback Contr.)
Gate
driver
6
VIPowerTM H-Bridges Solution for High Power
VNHD7008AY / VNHD7012AY
• Optimized Standby current
• PWM operations up to 20kHz
• Tailored and compact full bridges in combination with latest
dual-channel F7 technology PowerMOS
• STL64DN4F7AG 8mΩmax
• STL76DN4LF7AG 6mΩmax
• Charge Pump Out for reverse polarity protection
• Drain and Source voltage Monitoring of external PMOSFETs
• Gate Slope Control throgut external Resistor To Optimize
EMI
• PSSO36 Package
Improved Performance
VDS
Monitor
INX PWM SELx MultiSense MS_EN
Vcc clamp
Undervoltage
Logic, Diagnostic and Protections
Power Limitation
HS Over Temperature
HS Current Limit
Short circuit protection
Vcc
Monitor
OFF state
Outputs Monitoring
KSOURCE_LSA
OUT A OUT_B
HS_B
Tchip MonitorCurrent
Sense
Gate
Driver
Gate
Driver
MUX
VREGVREGCPCharge
Pump
GATE LSA GATE_LSB
GND
VREF_OVL
_LSA
VDS
Monitor
KSOURCE_LSB
VREF_OVL_
LSB
HS_A
VccVbatt
Gate
Driver
Gate
Driver
Power & Discrete Group (PDG) Wide Power Product Portfolio
7
From Discrete to Power Modules, ST leads the innovation
Typical Power: 3 kW ÷ > 30 kW
ACEPACK™ Power ModulesSLLIMM™ IPM
Typical Power: 20 W ÷ 3 kW
Discrete & Drivers & SIP
Typical Power: 10 W ÷ 10 kW
ACEPACK™ modulesAdaptable, Compact and Easier PACKage
• 100% controlled by ST for silicon
(SiC, MOSFET, IGBT and Diodes)
• Compact design and cost-effective system
approach for a plug & play system solution
• Configuration flexibility
• 2500Vrms electrical isolation
1 & 2
SMIT
DRIVE
• 100% controlled by ST for silicon
(SiC, MOSFET, IGBT and Diodes)
• 2500Vrms electrical isolation
• SMD assembly
• Top side cooling
• Low thermal resistance
• 750 - 1200V SiC MOSFET based switch
• Improved light load power losses for extended
EV driving ranges
• AMB frame for better thermal dissipation
• 3 different lead configuration options
• Extreme low conduction losses
• Direct Cooled Cu Base Plate with pin fins
• CIB
• Six-pack
• Three level Boost
• ….
• Bridge rectifier
• Half Bridge
• Boost
• ….
• Six-pack
ConfigurationsKey featuresOutlook Target ApplicationsACEPACK
8
ACEPACK DRIVEDirect liquid cooled high performance power module
9
Traction inverter for (H)EV, Trucks, Bus
Press FIT connections for high reliable and long lasting connection
SiC-MOSFET based, 750V and 1200V
Pin-fin for direct cooling
Dedicated NTC for each single substrate
Unequalled RDS(on)
ACEPACKTM DRIVE
Internal layout optimized for minimized stray inductace
High reliability and robustness: Dice sintered to substrate
Different bus bar available to fit welding or screwing connection methods.
AMB substrates for better thermal managment
Incredible high power density
10
• Multi Sintering Package: STPAK™
• Very good thermal resistance, no TIM material needed
• Very high current capability
• Top Side Cooling Package: ACEPACK™ SMIT
• Customazible and versatile insulated power module
• In both cases several devices in parallel has to be connecteed to realize an high power system
• connections introduces stray inductance which will limit speed• Inverter room occupation will increase accordingly
• ACEPACK DRIVE
• Represents an easy-to-use solutions, with direct coolign thanks to pin-fin structure integrated in base plate
• Several device are connected in parallel in the same substrate, minimizing stray inductances and boosting speed capabilities
• Thanks to small footprint, power module can be easily integrated in motor chassis
• No soldering or sintering needed, improved manufacturability:
• Press fit avoids soldering process
• Need only to be screwed onto a waterjacked for liquid cooling
• Differnt bus bar options for final used convenience, compatible wiht Hall-effect current
• Sintering needed to get best thermal perfomances
• PCB must be designed to deal with very high current level
ST solutions for traction inverterFrom scalable solutions to ACEPACK DRIVE
ACEPACK DRIVE case selection 11
Possibility to use an Hall-current sensor thanks to longer tabs
AC bus bar to be welded to motor connections
Long tab optionShort tab option Long tab w/o AC bar holes
1200V Si based
HybridPACKTM2 (*)
Gen 2 SiC 1200V
AMB Si3N4
including coming Gen 3
1200V SiC MOSFET
120kW(240kWpeak)
160kW
(320kWpeak)
Topology: Three phase inverter
DC-link : 750Vdc
PWM Strategy: Bipolar
Switching frequency: 12kHz
TJ < 80% of Tjmax at any condition
Peak Power for 10 sec
MI = 1, Cos(phi) = 0.8
Tfluid = 70°C
85kW(170kWpeak)
Power
Six-pack Module at 750V DC-link1200V Si IGBT vs. SiC MOSFET
(*) HybridPACK 2 is 30% bigger than ACEPACK DRIVE
600mm2 IGBT+Diode each switch
ACEPACK™ DRIVE
2 times higher power with the first Silicon Carbide
module version based on SiC MOSFET Gen 3
12
ACEPACK™ DRIVE
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