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Applications of the CA3080Transconductance Amplifie
AN6668 Rev.1.00Nov 1996
APPLICATION NOTE
High-Performance Operational rs
AN6668Rev.1.00
Nov 1996
Introduction
The CA3080 and CA3080A are similar in generic form toconventional operational amplifiers, but differ sufficiently tojustify an explanation of their unique characteristics. Thisnew class of operational amplifier not only includes the usualdifferential input terminals, but also contains an additionalcontrol terminal which enhances the device's flexibility foruse in a broad spectrum of applications. The amplifier incor-porated in these devices is referred to as an OperationalTransconductance Amplifier (OTA), because its output signalis best described in terms of the output-current that it cansupply:
The amplifier's output-current is proportional to the voltagedifference at its differential input terminals.
This Application Note describes the operation of the OTAand features various circuits using the OTA. For example,communications and industrial applications including modu-lators, multiplexers, sample-and-hold-circuits, gain controlcircuits and micropower comparators are shown and dis-cussed. In addition, circuits have been included to show theoperation of the OTA being used in conjunction with CMOSdevices as post-amplifiers.
Figure 1 shows the equivalent circuit for the OTA. The outputsignal is a current which is proportional to the transconduc-tance (gM) of the OTA established by the amplifier bias cur-rent (IABC) and the differential input voltage (eIN). The OTAcan either source or sink current at the output terminal,depending on the polarity of the input signal.
The availability of the amplifier bias current (IABC) terminalsignificantly increases the flexibility of the OTA and permitsthe circuit designer to exercise his creativity in the utilizationof this device in many unique applications not possible withthe conventional operational amplifier.
Circuit Description
A simplified block diagram of the OTA is shown in Figure 2.Transistors Q1 and Q2 comprise the differential input amplifierfound in most operational amplifiers, while the lettered-circles(with arrows leading either into or out of the circles) denote“current-mirrors”. Figure 3A shows the basic type of current-mirror which is comprised of two transistors, one of which isdiode-connected. In a current-mirror with similar geometriesfor QA and QB, the current I’ establishes a second current Iwhose value is essentially equal to that of I’.
This basic current-mirror configuration is sensitive to thetransistor beta (). The addition of another active transistor,shown in Figure 3B, greatly diminishes the circuit sensitivityto transistor beta and increases the current-source outputimpedance in direct proportion to the transistor beta. Cur-rent-mirror W (Figure 2) uses the configuration shown in Fig-ure 3A, while mirrors X, Y, and Z are basically the versionshown in Figure 3B. Mirrors Y and Z employ PNP transis-tors, as depicted by the arrows pointing outward from themirrors. Appendix 1 describes current-mirrors in more detail.
Transconductance gM
iOUTeIN-----------------=
FIGURE 1. BASIC EQUIVALENT CIRCUIT OF THE OTA
gM x eIN
OTA7
V+
V-
4
2RO
2RO
RIN
eIN
2
3
-
+
IABC
5
6IOUT = gM(eIN)
gM (mS) = 19.2 IABC (mA)
RO (M) 7.5/IABC (mA)
FIGURE 2. SIMPLIFIED DIAGRAM OF THE OTA
Y
7
V+
V-
4
NON-INVERTING
IABC
5
6Q1 Q2
W
2
X
Z
INPUT
OUTPUT
3
INVERTINGINPUT
AMPLIFIERBIAS CURRENT
V-
QB
I’ I
V-
QBQA
I’ I
QA
FIGURE 3A. DIODE-CONNECTED TRANSISTOR PAIRED WITH TRANSISTOR
Page 1 of 18
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
Figure 4 is the complete schematic diagram of the OTA. TheOTA employs only active devices (transistors and diodes). Cur-rent applied to the amplifier-bias-current terminal, IABC, estab-lishes the emitter current of the input differential amplifier Q1and Q2. Hence, effective control of the differential transcon-ductance (gM) is achieved.
The gM of a differential amplifier is equal to:
(see Reference 2 for derivation) where q is the charge on anelectron, is the ratio of collector current to emitter current ofthe differential amplifier transistors, (assumed to be 0.99 in thiscase), IC is the collector current of the constant-current source(IABC in this case), K is Boltzman's constant, and T is the ambi-ent temperature in degrees Kelvin. At room temperature, gM =19.2 x IABC, where gM is in mS and IABC is in milliamperes.The temperature coefficient of gM is approximately -0.33%/oC(at room temperature).
Transistor Q3 and diode D1 (shown in Figure 4) comprise the cur-rent mirror “W” of Figure 4. Similarly, transistors Q7, Q8 and Q9and diode D5 of Figure 4 comprise the generic current mirror “Z”of Figure 2. Darlington-connected transistors are employed in mir-rors “Y” and “Z” to reduce the voltage sensitivity of the mirror, bythe increase of the mirror output impedance. Transistors Q10,
Q11, and diode D6 of Figure 4 comprise the current-mirror “X” ofFigure 2. Diodes D2 and D4 are connected across the base-emit-ter junctions of Q5 and Q8, respectively, to improve the circuitspeed. The amplifier output signal is derived from the collectors ofthe “Z” and “X” current-mirror of Figure 2, providing a push-pullClass A output stage that produces full differential gM. This circuitdescription applies to both the CA3080 and CA3080A. TheCA3080A offers tighter control of gM and input offset voltage, lessvariation of input offset voltage with variation of IABC and con-trolled cut-off leakage current. In the CA3080A, both the outputand the input cut-off leakage resistances are greater than1,000M.
ApplicationsMultiplexing
The availability of the bias current terminal, IABC, allows thedevice to be gated for multiplexer applications. Figure 5 shows asimple two-channel multiplexer system using two CA3080 OTAdevices. The maximum level-shift from input to output is low(approximately 2mV for the CA3080A and 5mV for the CA3080).This shift is determined by the amplifier input offset voltage of theparticular device used, because the open-loop gain of the systemis typically 100dB when the loading on the output of the CA3080Ais low. To further increase the gain and reduce the effects of load-ing, an additioanl buffer and/or gain-stage may be added. Meth-ods will be shown to successfully perform these functions.
FIGURE 3B. IMPROVED VERSION: EMPLOYS AN EXTRA TRANSISTOR
FIGURE 3. BASIC TYPES OF CURRENT MIRRORS
I’ II’ I
V-
I
V-
I
FIGURE 4. SCHEMATIC DIAGRAM OF OTA TYPES CA3080 AND CA3080A
Q4D2
Q5
Q7Q6
Q3
Q2Q1
D1
Q11
D6
Q10
Q8
D4Q9
D5D3
OUTPUT6
7
4V-
V+
VABC5
3
2
INVERTINGINPUT
INVERTINGINPUT
NON-
AMPLIFIERBIAS-CURRENT
qIC2KT-------------
FIGURE 5. SCHEMATIC DIAGRAM OF OTAs IN A TWO-CHANNEL LINEAR TIME-SHARED MULTIPLEXER CIRCUIT
OTAAMP 1
CA3080+
-
10k
2
310k
54
6
7
V-IABC
V+
CHANNEL #1INPUT
OTAAMP 2
CA3080+
-
10k
2
310k
54
6
7
V-
V+
CHANNEL #2INPUT
MULTIPLEXEDOUTPUT
V+ = 5VV- = -5V
(NO SUPPLY BYPASSINGSHOWN)
620
150pF
36k
36k
Q
Q
DTL OR T2LFLIP-FLOP
V+
CLOCKINPUT
TO TERM 5AMP 1 IABC
2N4037
AN6668 Rev.1.00 Page 2 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
In this example 5V power-supplies were used, with the IC flip-flop powered by the positive supply. The negative supply-voltagemay be increased to -15V, with the positive-supply at 5V to satisfythe logic supply voltage requirements. Outputs from the clockedflip-flop are applied through PNP transistors to gate the CA3080amplifier-bias-current terminals. The grounded-base configurationis used to minimize capacitive feed-through coupling via the base-collector junction of the PNP transistor.
Another multiplexer system using the OTAs clocked by a CMOSflip-flop is shown in Figure 6. The high output voltage capability ofthe CMOS flip-flop permits the circuit to be driven directly withoutthe need for PNP level-shifting transistors.
A simple RC phase-compensation network is used on the out-put of the OTA in the circuits shown in Figures 5 and 6. Thevalues of the RC-network are chosen so that:
This RC network is connected to the point shown because thelowest-frequency pole for the system is usually found at this point.Figure 7 shows an oscilloscope photograph of the multiplexer cir-cuit functioning with two input signals. Figure 8 shows an oscillo-scope photograph of the output of the multiplexer with a 6VP-P,sine wave signal (22kHz) applied to one amplifier and the input tothe other amplifier grounded. This photograph demonstrates anisolation of at least 80dB between channels.
Sample-and-Hold Circuits
An extension of the multiplex system application is a sample-and-hold circuit (Figure 9), using the strobing characteristics ofthe OTA amplifier bias-current (ABC) terminal as a means ofcontrol. Figure 9 shows the basic system using the CA3080A asan OTA in a simple voltage-follower configuration with thephase-compensation capacitor serving the additional function ofsampled-signal storage. The major consideration for the use ofthis method to “hold” charge is that neither the charging amplifiernor the signal readout device significantly alter the charge storedon the capacitor. The CA3080A is a particularly suitable capaci-tor-charging amplifier because its output resistance is more than1000Munder cut-off conditions, and the loading on the storagecapacitor during the hold-mode is minimized. An effective solu-
FIGURE 6. SCHEMATIC DIAGRAM OF A TWO-CHANNEL LINEAR MULTIPLEXER SYSTEM USING A CMOS FLIP-FLOP TO GATE TWO OTAs
OTAAMP 1
+
-10k
2
310k
54
6
7
V-
V+
OTAAMP 2
+
-
10k
2
310k
54
6
7
V-
V+
MULTIPLEXEDOUTPUT
V+ = 10V, V- = -10V(NO SUPPLY BYPASSING
SHOWN)
620
150pF
2
VDD
1/2 CD4013A
V-
CLOCK1
82kIABC
82kIABC
TO TERM 5AMP 1
TO TERM 5AMP 2
VSSQ
Q
7 6 414
CLINPUT
0V
-10VD
5
32k
12RC---------------- 2MHz.
Top Trace: Multiplexed Output; 1V/Div., 100s/Div.Bottom Trace: Time Expansion of Switching Between
Inputs; 2V/Div., 5s/Div.
FIGURE 7. VOLTAGE WAVEFORMS FOR CIRCUIT OF FIGURE 6
Top Trace: Output; 1V/Div., 100s/Div. Bottom Trace: Voltage Expansion of Output; 1mV/Div., 100s/Div.
FIGURE 8. VOLTAGE WAVEFORMS FOR CIRCUIT OF FIGURE 6
AN6668 Rev.1.00 Page 3 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
tion to the read-out requirement involves the use of a 3N138insulated-gate field-effect transistor (MOSFET) in the feedbackloop. This transistor has a maximum gate-leakage current of10pA; its loading on the charge “holding” capacitor is negligible.The open-loop voltage-gain of the system (Figure 9) is approxi-mately 100dB if the MOSFET is used in the source-followermode with the CA3080A as the input amplifier. The open-loopoutput impedance (1/gM) of the 3N138 is approximately 220because its transconductance is about 4,600S at an operatingcurrent of 5mA. When the CA3080A drives the 3N138, theclosed loop operational-amplifier output impedancecharacteristic is:
Figure 10 shows a “sampled” triangular signal. The lower tracein the photograph is the sampling signal. When this signal goesnegative, the CA3080A is cutoff and the signal is “held” on thestorage capacitor, as shown by the plateaus on the triangularwaveform. The center trace is a time expansion of the top-mosttransition (in the upper trace) with a time scale of 2s/Div.
Once the signal is acquired, variation in the stored-signal levelduring the hold-period is of concern. This variation is primarily afunction of the cutoff leakage current of the CA3080A (a maxi-mum limit of 5nA), the leakage of the storage element, and otherextraneous paths. These leakage currents may be either “posi-tive” or “negative” and, consequently, the stored-signal may rise orfall during the “hold” interval. The term “tilt” is used to describe thiscondition. Figure 11 shows the expected pulse “tilt” in microvoltsversus time for various values of the compensation/storagecapacitor. The horizontal axis shows three scales representingleakage currents of 50nA, 5nA, 500pA.
Figure 12 shows a dual-trace photograph of a triangular signalbeing “sampled-and-held” for approximately 14ms with a300pF storage capacitor. The center trace (expanded to20mV/Div.) shows the worst-case “tilt” for all the steps shown inthe upper trace. The total equivalent leakage current in thiscase is only 170pA (I = C dv/dt).
Figure 13 is an oscilloscope photograph of a ramp voltage beingsampled by the “sample-and-hold” circuit of Figure 9. The inputsignal and sampled-output signal are superimposed. The lowertrace shows the sampling signal. Data shown in Figure 13 wererecorded with supply voltages of 10V and the series input resis-tor at terminal 5 was 22k.
ZOUT
ZO OPEN-LOOP
A OPEN-LOOP VOLTAGE-GAIN -------------------------------------------------------------------------------------------
220100dB-----------------
220
105
--------------- 0.0022
FIGURE 9. SCHEMATIC DIAGRAM OF OTA IN A SAMPLE-AND-HOLD CIRCUIT
OTACA3080
+
-
2.0k
2
2.0k
5
46
7
IABC
V+ =15V
30k
STORAGE AND PHASE
300pF
120pF
3
INPUT
480A
SAMPLE
HOLD
220R
0.01FC
COMPENSATIONNETWORK
V- = -15V
0.01F
3k
OUTPUT
-15V
0V
3N138
FIGURE 10. WAVEFORMS FOR CIRCUIT OF FIGURE 9
Center Trace: Top Portion of Upper Signal; 1V/Div., 2s/Div.Bottom Trace: Sampling Signal; 20V/Div., 20s/Div.
Top Trace: Sampled Signal 1V/Div., 20s/Div.
1000K
100K
10K
1K
100
10
1
HO
LD
PE
RIO
D (s
)
C = 10F
3F
1F
0.1F0.3
F
0.03F
0.01F
3000pF
300pF
100pF
30pF
10pF
1000pF
110
100
101001K
1001K
10K
1K10K
100K
10K100K1000K
THIS SCALE FOR500pA5nA50nALEAKAGE
PULSE TILT (V)
FIGURE 11. “TILT” IN “HELD” VOLTAGE vs HOLD TIME
AN6668 Rev.1.00 Page 4 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
In Figure 14, the trace of Figure 13 has been expanded(100mV/Div. and 100ns/Div.) to show the response of thesample-and-hold circuit with respect to the sampling signal.After the sampling interval, the amplifier overshoots the signallevel and settles (within the amplifier offset voltage) in approxi-mately 1s. The resistor in series with the 300pF phase-com-pensation capacitor was adjusted to 68 for minimumrecovery time.
Figure 15 shows the basic circuit of Figure 9 implemented with a2N4037 PNP transistor to minimize capacitive feedthrough. Fig-ure 16 shows oscilloscope photographs taken with the circuit ofFigure 15 operating in the sampling mode at supply voltage of15V. The 9.1k resistor in series with the PNP transistor emitterestablishes amplifier-bias-current (IABC) conditions similar tothose used in the circuit of Figure 9.
Center Trace: Worse Case Tilt; 20mV/Div., 20ms/Div.Top Trace: Sampled Signal; 1V/Div., 20ms/Div.
FIGURE 12. “TRIANGULAR-VOLTAGE” BEING SAMPLED BY CIRCUIT OF FIGURE 9
Top Trace: Input and Output Superimposed; 1V/Div., 2s/Div.Bottom Trace: Sampling Signal; 20V/Div., 2s/Div.
FIGURE 13. “RAMP-VOLTAGE” BEING SAMPLED BY CIRCUIT OF FIGURE 9
Top Trace: Input and Sampled Output Superimposed;
Bottom Trace: Sampling Signal; 20V/Div., 100ns/Div.100mV/Div., 100ns/Div.
FIGURE 14. “TRIANGULAR-VOLTAGE” BEING SAMPLED BY CIRCUIT OF FIGURE 9
FIGURE 15. SCHEMATIC DIAGRAM OF THE OTA IN A SAMPLE-AND-HOLD CONFIGURATION (DTL/TTL CONTROL LOGIC)
OTACA3080
+
-
2.0k
2
2.0k
5
46
7
IABC
V+ = 15V
9.1k
STORAGE AND PHASE
300pF
120pF
3
INPUT
DTL/TTL CONTROL
68
0.01F
COMPENSATIONNETWORK
V- = -15V
0.01F
3k
OUTPUT
0V
5V
3N138
LOGIC
2N4037
C
AN6668 Rev.1.00 Page 5 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
Considerations of circuit stability and signal retention require theuse of the largest possible phase-compensation capacitor, com-patible with the required slew rate. In most systems the capacitoris chosen for the maximum allowable “tilt” in the storage modeand the resistor is chosen so that 1/2RC 2MHz, correspondingto the first pole in the amplifier at an output current level of 500A.It is frequently desirable to optimize the system response by theplacement of a small variable resistor in series with the capacitor,as is shown in Figures 9 and 15. The 120pF capacitor shuntingthe 2k resistor improves the amplifier transient response.
Figure 17 shows a multi-trace oscilloscope photograph of inputand output signals for the circuit of Figure 9, operating in thelinear mode. The lower portion of the photograph shows theinput signal, and the upper portion shows the output signal.The amplifier slew-rate is determined by the output current andthe capacitive loading: in this case the slew rate (dv/dt) =1.8V/s.
The center trace in Figure 17 shows the difference between theinput and output signals as displayed on a Tektronix 7A13 differ-ential amplifier at 2mV/Div. The output of the amplifier systemsettles to within 2mV (the offset voltage specification for theCA3080A) of the input level in 1s after slewing.
Figure 18 is a curve of slew-rate versus amplifier-bias-current(IABC) for various storage/compensation capacitors. The magni-tude of the current being supplied to the storage/compensationcapacitor is equal to the amplifier-bias-current (IABC) when theOTA is supplying its maximum output current.
Gain Control - Amplitude Modulation
Effective gain control of a signal may be obtained by controlledvariation of the amplifier-bias-current (IABC) in the OTA becauseits gM is directly proportional to the amplifier-bias-current (IABC).For a specified value of amplifier-bias-current, the output current(IO) is equal to the product of gM and the input signal magnitude.The output voltage swing is the product of output current (IO)and the load resistance (RL).
Figure 19 shows the configuration for this form of basic gaincontrol (a modulation system). The output signal current (IO) isequal to -gM x VX; the sign of the output signal is negativebecause the input signal is applied to the inverting input terminalof the OTA. The transconductance of the OTA is controlled byadjustment of the amplifier bias current, IABC. In this circuit thelevel of the unmodulated carrier output is established by a partic-ular amplifier-bias-current (IABC) through resistor RM. Amplitudemodulation of the carrier frequency occurs because variation ofthe voltage VM forces a change in the amplifier-bias-current(IABC) supplied via resistor RM. When VM goes positive, thebias current increases which causes a corresponding increasein the gM of the OTA. When the VM goes in the negative direc-tion (toward the amplifier-bias-current terminal potential), theamplifier-bias-current decreases, and reduces the gM of theOTA.
FIGURE 16. CIRCUIT OF FIGURE 15 OPERATING IN SAMPLING MODE
Top Trace: Input and Sampled Output Superimposed;
Bottom Trace: Sampling Signal; 5V/Div., 100ns/Div.100mV/Div., 100ns/Div.
FIGURE 17. CIRCUIT OF FIGURE 9 OPERATING IN THE LINEAR SAMPLE MODE
Center Trace: Differential Comparsion of Input and
Bottom Trace: Input; 5V/Div., 2s/Div.
Top Trace: Output; 5V/Div., 2s/Div.
Output; 2mV/Div., 0V thru Center; 2s/Div.
FIGURE 18. SLEW RATE vs AMPLIFIER-BIAS-CURRENT (IABC)
0.01F
0.1F0.03
F3000pF
300pF100pF30pFC = 10pF
1000pF
100
10
1.0
0.1
0.01
0.0010.1 1 10 100 1000
AMPLIFIER BIAS CURRENT (IABC A)
SL
EW
RA
TE
(V
/s)
AN6668 Rev.1.00 Page 6 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
As discussed earlier, gM = 19.2 x IABC, where gM is inmillisiemens when IABC is in milliamperes. In this case, IABC isapproximately equal to:
There are two terms in the modulation equation: the first termrepresents the fixed carrier input, independent of VM and thesecond term represents the modulation, which either adds to orsubtracts from the first term. When VM is equal to the V- term,the output is reduced to zero.
In the preceding modulation equations the term,
involving the amplifier-bias-current terminal voltage (VABC) (seeFigure 4 for VABC) was neglected. This term was assumed to besmall because VABC is small compared with V- in the equation. Ifthe amplifier-bias-current terminal is driven by a current-source(such as from the collector of a PNP transistor), the effect of VABCvariation is eliminated and transferred to the involvement of thePNP transistor base-emitter junction characteristics. Figure 20shows a method of driving the amplifier-bias-current terminal toeffectively remove this latter variation.
If an NPN transistor is added to the circuit of Figure 20 as anemitter-follower to drive the PNP transistor, variations due tobase-emitter characteristics are considerably reduced due tothe complementary nature of the NPN base-emitter junctions.Moreover, the temperature coefficients of the two base-emitterjunctions tend to cancel one another. Figure 21 shows a con-figuration using one transistor in the CA3018A NPN transistor-array as an input emitter-follower, with the three remaining
transistors of the transistor-array connected as a current-source for the emitter followers.
The 100k potentiometer shown in these schematics is used tonull the effects of amplifier input offset voltage. This potentiometeris adjusted to set the output voltage symmetrically about zero.Figures 22A and 22B show oscilloscope photographs of the out-put voltages obtained when the circuit of Figure 19 is used as amodulator for both sinusoidal and triangular modulating signals.This method of modulation permits a range exceeding 1000:1 inthe gain, and thus provides modulation of the carrier input inexcess of 99%. The photo in Figure 22C shows the excellent iso-lation (>80dB at f = 100kHz) achieved in this modulator during the“gated-off” condition.
Four-Quadrant Multipliers
A single CA3080A is especially suited for many low-frequency,low-power four-quadrant multiplier applications. The basic mul-tiplier circuit of Figure 23 is particularly useful for waveformgeneration, doubly balanced modulation, and other signal pro-cessing applications, in portable equipment, where low-powerconsumption is essential and accuracy requirements are mod-
FIGURE 19. AMPLITUDE MODULATOR CIRCUIT USING THE OTA
OTACA3080A
+
-2
5
4
6
7
RM100k
3
47k
51
51
+6V
-6V
V+V-
VX
VM
IABC
5.1k
IO
IO = gM VX RLAMPLITUDEMODULATED
OUTPUT
CARRIERFREQUENCY
MODULATINGFREQUENCY
VM V- –
RM------------------------- IABC=
IO g– MVX=
IO19.2 VX V-
RM------------------------------------
19.2 VX VM
RM--------------------------------------–=
gMVX 19.2 IABC VX
IO19.2– VM V- – VX
RM------------------------------------------------------=
=
19.2 VX VABC
RM---------------
FIGURE 20. AMPLITUDE MODULATOR USING OTA CONTROLLED BY PNP TRANSISTOR
OTACA3080A
+
-2
5
4
6
7
100k
3
47k
51
51
+6V
-6V
+6V-6V
VX
VM
IABC
5.1k
AMOUTPUT
5.1k
2N4037
24k
+6V
FIGURE 21. AMPLITUDE MODULATOR USING OTA CONTROLLED BY PNP AND NPN TRANSISTORS
OTACA3080A
+
-2
5
4
6
7
3
47k
51
51
+15V
-15V
+15V
VX
VM
IABC
5.1k
AMOUTPUT
10k2N4037
75k
+6V
-15V
100k+15V
1.3M+15V
-15V
CA3018A
AN6668 Rev.1.00 Page 7 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
erate. The multiplier configuration is basically an extension ofthe previously discussed gain-controlled configuration (Figure19).
To obtain a four-quadrant multiplier, the first term of themodulation equation (which represents the fixed carrier) mustbe reduced to zero. This term is reduced to zero by the place-ment of a feedback resistor (R) between the output and theinverting input terminal of the CA3080A, with the value of thefeedback resistor (R) equal to 1/gM. The output current is IO =gM (-VX) because the input is applied to the inverting terminalof the OTA. The output current due to the resistor (R) is VX/R.Hence, the two signals cancel when R = 1/gM. The current forthis configuration is:
The output signal for these configurations is a current which isbest terminated by a short-circuit. This condition can be satis-fied by making the load resistance for the multiplier output verysmall. Alternatively, the output can be applied to a current-to-voltage converter as shown in Figure 24.
In Figure 23, the current “cancellation” in the resistor R is a directfunction of the OTA differential amplifier linearity. In the followingexample, the signal excursion is limited to 10mV to preserve thislinearity. Greater signal-excursions on the input terminal will resultin a significant departure from linear operation (which may beentirely satisfactory in many applications).
IO-19.2 VXVM
RM-------------------------------- , and VM VY==
Center Trace: Amplitude Modulated Output; 500mV/Div.Bottom Trace: Expanded Output to Show
Top Trace: Modulation Input ( 20VP-P)
FIGURE 22A. RESPONSE FOR SINE WAVE MODULATION
TIME (50s/DIV.)
Depth of Modulation; 20mV/Div.
Bottom Trace: Amplitude Modulated Output; 500mV/Div.Top Trace: Modulation Input (20V)
FIGURE 22B. RESPONSE FOR TRIANGLE WAVE MODULATION
TIME (50s/DIV.)
Bottom Trace: Voltage Expansion Of Above SignalTop Trace: Gated Output; 1V/Div.
Showing No Residual; 1mv/Div.
TIME (50s/DIV.)
FIGURE 22C. RESPONSE FOR SQUARE WAVE MODULATION
FIGURE 22. AMPLITUDE MODULATOR CIRCUIT OF FIGURE 19 WITH RM = 40k, VS = 10V
FIGURE 23. BASIC FOUR QUADRANT ANALOG MULTIPLIER USING AN OTA
OTACA3080A
+
-2
5
6
RM
3
IABCVY
VX
R = 1/gM
IO -K VX VY
AN6668 Rev.1.00 Page 8 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
Figure 25 shows a schematic diagram of the basic multiplier withthe adjustments set-up to give the multiplier an accuracy of approx-imately 7 percent full-scale. There are only three adjustments: 1)one is on the output, to compensate for slight variations in the cur-rent-transfer ratio of the current-mirrors (which would otherwiseresult in a symmetrical output about some current level other thanzero); 2) the adjustment of the 20k potentiometer establishes thegM of the system equal to the value of the fixed resistor shuntingthe system when the Y-input is zero; 3) compensates for error dueto input offset voltage.
Procedure for adjustment of the circuit:
1. a) Set the 1M output-current balancing potentiometer tothe center of its range
b) Ground the X- and Y- inputsc) Adjust the 100k potentiometer until a 0V reading is
obtained at the output.2. a) Ground the Y-input and apply a signal to the X-
input through a low source-impedance generator (it isessential that a low impedance source be used; this min-imizes any change in the gM balance or zero-point dueto the 50A Y-input bias current).
b) Adjust the 20k potentiometer in series with Y-input untila reading of 0V is obtained at the output. This adjust-ment establishes the gM of the CA3080A at the properlevel to cancel the output signal. The output current isdiverted through the 510k resistor.
3. a) Ground the X-input and apply a signal to the Y-inputthrough a low source-impedance generator.
b) Adjust the 1M resistor for an output voltage of 0V.
There will be some interaction among the adjustments and theprocedure should be repeated to optimize the circuitperformance.
Figure 26 shows the schematic of an analog multiplier circuitwith a 2N4037 PNP transistor replacing the Y-input “current”resistor. The advantage of this system is the higher input resis-tance resulting from the current-gain of the PNP transistor. Theaddition of another emitter-follower preceeding the PNP tran-sistor (shown in Figure 21) will further increase the current gainwhile markedly reducing the effect of the Vbe temperature-dependent characteristic and the offset voltage of the twobase-emitter junctions.
Figures 27A and 27B show oscilloscope photographs of the out-put signals delivered by the circuit of Figure 26 which is connectedas a suppressed-carrier generator. Figures 28A and 28B containphotos of the outputs obtained in signal “squaring” circuits, i.e.“squaring” sine-wave and triangular- wave inputs.
If 15V power supplies are used (shown in Figure 26), bothinputs can accept 10V input signals. Adjustment of this multi-plier circuit is similar to that already described above.
FIGURE 24. OTA ANALOG MULTIPLIER DRIVING A CURRENT-TO-VOLTAGE CONVERTER
OP AMPCA3741CT
200k
IO
V+
XRF
EOUT = - IO RF
V-
150k
OTAY
ANALOG MULTIPLIERCA3080A
100
VY
FIGURE 25. SCHEMATIC DIAGRAM OF ANALOG MULTIPLIER USING OTA
OTACA3080A
+
-2
5
4
6
7
100k
3
24k
1010
+6V
-6V+6V-6V
VX
3.3M
OUTPUT
91k
5.1k510k
1M+6V-6V
20k
IABC
FIGURE 26. SCHEMATIC DIAGRAM OF ANALOG MULTIPLIER USING OTA CONTROLLED BY A PNP TRANSISTOR
OTACA3080A
+
-2
5
4
6
7
100k
3
24k
5.15.1
+15V
-15V
+15V-15V
VX
VY
4.7M
OUTPUT
2.2k
2N4037
62k
+15V
5.1k250k
1M+15V-15V
20k
FIGURE 27A.
500mV/Div., 200s/Div.,Triangular Input: 700Hz; 5VP-P to VY InputCarrier Input: 30kHz; 13.5VP-P to VX Input
AN6668 Rev.1.00 Page 9 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
The accuracy and stability of these multipliers are a direct func-tion of the power supply-voltage stability because the Y-input isreferred to the negative supply-voltage. Tracking of the positiveand negative supply is also important because the balanceadjustments for both the offset voltage and output current arealso referenced to these supplies.
Linear Multiplexer - Decoder
A simple, but effective system for multiplexing and decodingcan be assembled with the CA3080 shown in Figure 29. Onlytwo channels are shown in this schematic, but the number ofchannels may be extended as desired. Figure 30 shows oscil-loscope photos taken during operation of the multiplexer anddecoder. A CA3080 is used as a 10s delay- “one-shot” multiv-ibrator in the decoder to insure that the sample-and-hold circuitcan sample only after the input signal has settled. Thus, thetrailing edge of the “one-shot” output-signal is used to samplethe input at the sample-and-hold circuit for approximately 1s.Figure 31 shows oscilloscope photos of various waveformsobserved during operation of the multiplexer/decoder circuit.Either the Q or Q output from the flip-flop may be used to trig-ger the 10s “one-shot” to decode a signal.
FIGURE 27B.
FIGURE 27. WAVEFORMS OBSERVED WITH OTA ANALOG MULTIPLIER USED AS A SUPPRESSED CARRIER GENERATOR
500mV/Div., 200s/Div.,Modulating Frequency: 700Hz; 5VP-P to VY Input
Carrier Input: 21kHz; 13.5VP-P to VX Input
FIGURE 28A.
0V
0V
Bottom Trace: Output; 500mV/Div., 1ms/Div. (400Hz)Top Trace: Input to X And Y; 2V/Div., 1ms/Div. (200Hz)
FIGURE 28B.
FIGURE 28. WAVEFORMS OBSERVED WITH OTA ANALOG MULTIPLIER USED IN SIGNAL-SQUARING CIRCUITS
0V
0V
Bottom Trace: Output; 500mV/Div., 1ms/Div. (400Hz)Top Trace: Input to X And Y; 2V/Div., 1ms/Div. (200Hz)
AN6668 Rev.1.00 Page 10 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
FIGURE 29. TWO-CHANNEL MULTIPLEXER AND DECODER USING OTAs
OTACA3080A
+
-
3
2
10k
5
4
6
7
-5V
IABC
+5V
CHANNEL #1INPUT
OTACA3080A
+
-
10k
2
310k
5
4
6
7
-5V
+5V
CHANNEL #2INPUT
TRANSMISSIONMEDIA
620
150pF
51/2 CD4013A
1Q
Q
14
CL0V
-5VD
2
32.2k
OTACA3080
-
+
DECODER
3
2k
5
46
7
IABC
+5V
62k
300pF
2270
0.01F
0.01F
3k
OUTPUT
3N138
2N4037
MULTIPLEXER
-5V
7 6 4
2k
DECODED
-5V
82k
500k
18pF
FLIP FLOP
82k
82k
IABC
10k
OTACA3080A
-
+3
2
1k
7
4
6
5
-5V
+5V
FROMQ OR Q
+5V
68k1N914
1N91451pF
10ms ONE - SHOT
10s
Q1
20pF
FIGURE 30. WAVEFORMS SHOWING OPERATION OF LINEAR MULTIPLEXER/SAMPLE-AND-HOLD DECODE CIRCUITRY (FIGURE 29)
Center Trace: Recovered Output; 1V/Div., 20ms/Div.Bottom Trace: Multiplexed Signals; 2V/Div., 20ms/Div.
Top Trace: Input Signal; 1V/Div., 20ms/Div.Center Trace: Recovered Output; 1V/Div., 20ms/Div.Bottom Trace: Multiplexed Signals; 1V/Div., 20ms/Div.
Top Trace: Input Signal; 1V/Div., 20ms/Div.
AN6668 Rev.1.00 Page 11 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
High-Gain, High-Current Output Stages
In the previously discussed examples, the OTA has been buff-ered by a single insulated-gate field-effect-transistor (MOS-FET) shown in Figure 9. This configuration yields a voltagegain equal to the (gM) (RO) product of the CA3080, which istypically 142,000 (103dB). The output voltage and current-swing of the operational amplifier formed by this configuration(Figure 9) are limited by the 3N138 MOSFET performance andits source-terminal load. In the positive direction, the MOSFETmay be driven into saturation; the source-load resistance andthe MOSFET characteristics become the factors limiting theoutput-voltage swing in the negative direction. The availablenegative-going load current may be kept constant by the returnof the source-terminal to a constant-current transistor. Phasecompensation is applied at the interface of the CA3080 and the3N138 MOSFET shown in Figure 9.
Another variation of this generic form of amplifier utilizes theCD4007A (CMOS) inverter as an amplifier driven by theCA3080. Each of the three inverter/amplifiers in the CD4007Ahas a typical voltage gain of 30dB. The gain of a single CMOSinverter/amplifier coupled with the 100dB gain of the CA3080yields a total forward-gain of about 130dB. Use of a two-stageCMOS amplifier configuration will increase the total open-loopgain of the system to about 160dB (100,000,000). Figures 32through 35 show examples of these configurations. EachCMOS inverter/amplifier can sink or source a current of 6mA(Typ). In Figures 34 and 35, two CMOS inverter/amplifiershave been connected in parallel to provide additional outputcurrent.
Center Trace: “One-shot” Output; 5V/Div., 20s/Div.Bottom Trace: Strobe Pulse At The Collector of Q1;
Top Trace: Flip-flop Output; 5V/Div., 20s/Div.
FIGURE 31A. WAVEFORMS CONTROLLING DECODER ENABLE
0.1V/Div., 20s/Div.
Center Trace: Multiplexed Output With One
Bottom Trace: Decoded Output; 0.5V/Div., 5ms/Div.
Top Trace: Strobe Pulse at Q1; 0.5V/Div., 5ms/Div.
Input at GND; 0.5V/Div., 5ms/Div.
FIGURE 31B. WAVEFORMS SHOWING DECODER OPERATION
FIGURE 31C. SAME AS FIGURE 31B BUT WITH EXPANDED TIME SCALE
FIGURE 31. VARIOUS WAVEFORMS SHOWING THE OPERATION OF LINEAR MULTIPLEXER
500s/Div.
AN6668 Rev.1.00 Page 12 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
The open-loop slew-rate of the circuit in Figure 32 isapproximately 65V/s. When compensated for the unity-gainvoltage-follower mode, the slew-rate is about 1V/s (shown inFigure 33). Even when the three inverter/amplifiers in theCD4007A are connected as shown in Figure 34, the open-loopslew-rate remains at 65V/s. A slew-rate of about 1V/s ismaintained with this circuit connected in the unity-gain voltage-follower mode, as shown in Figure 35. Figure 36 contains oscil-loscope photos of input-output waveforms under small-signaland large-signal conditions for the circuits of Figures 33 and35. These photos illustrate the inherent stability of the OTA andCMOS circuits operating in concert.
Precision Multistable Circuits
The micropower capabilities of the CA3080, when combinedwith the characteristics of the CD4007A CMOS inverter/amplifi-ers, are ideally suited for use in connection with precision mul-tistable circuits. In the circuits of Figures 32, 33, 34, and 35, forexample, power-supply current drawn by the CMOSinverter/amplifier approaches zero as the output voltageswings either positive or negative, while the CA3080 current-drain remains constant.
Figure 37 shows a variety of circuits that can be assembledusing the CA3080 to drive one inverter/amplifier in the
CD4007A. For greater output current capability, the remainingamplifiers in the CD4007A may be connected in parallel withthe single stage shown. Precise timing and thresholds areassured by the stable characteristics of the input differentialamplifier in the CA3080. Moreover, speed vs power consump-tion trade-offs may be made by adjustment of the IABC currentto the CA3080. The quiescent power consumption of the cir-cuits shown in Figure 37 is typically 6mW, but can be made tooperate in the micropower region by suitable circuitmodifications.
FIGURE 32. OTA DRIVING CMOS INVERTER/AMPLIFIER IN OPEN-LOOP MODE
CA3080
+
-
+6V
2
5
46
7
+6V
3NON-INVERTING
OUTPUT
6
-6V
INPUT
INVERTINGINPUT
8
7
-6V
13
14
1/3 CD4007A
FIGURE 33. OTA DRIVING CMOS INVERTER/AMPLIFIER IN UNITY-GAIN CLOSED-LOOP MODE
CA3080-
+
+6V
3
5
4
6
7
+6V
2
OUTPUT
6 8
7
-6V
13
14
1/3 CD4007A
OTA
-6V
0.1F
40F-+
2.7
0.25F50
2kVIN
2k
24k
FIGURE 34. OTA DRIVING TWO-STAGE CMOS INVERTER/AMPLIFIER IN OPEN-LOOP MODE
CA3080+
-
V+
2
7
4
6
5
V+
3
OUTPUT
6
8
7
V-
13
14
OTA
V-
3
N
P
5
4
1
2
10
N
P
9
11
12
N
PINVERTING
INPUT
INVERTINGINPUT
NON-
FIGURE 35. OTA DRIVING TWO-STAGE CMOS INVERTER/AMPLIFIER IN UNITY GAIN CLOSED-LOOP MODE
CA3080+
-
+6V
2
7
4
6
5
+6V
3
OUTPUT
6
8
7
-6V
13
14
OTA
-6V
0.1F
50F
0.33
0.1F
2k
2k
24k
INPUT
3
N
P
5
4
1
2
10
N
P
9
11
12
N
P
50F
AN6668 Rev.1.00 Page 13 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
FIGURE 36A. LARGE SIGNAL RESPONSE FOR CIRCUIT IN FIGURE 33 FIGURE 36B. SMALL SIGNAL RESPONSE FOR CIRCUIT IN
FIGURE 33
FIGURE 36C. LARGE SIGNAL RESPONSE FOR CIRCUIT IN FIGURE 35
FIGURE 36D. SMALL SIGNAL RESPONSE FOR CIRCUIT IN FIGURE 35
FIGURE 36. PERFORMANCE OF OTA DRIVING CMOS INVERTER/AMPLIFIER
Bottom Trace: Output; 5V/Div., 100s/Div.Top Trace: Input; 5V/Div., 100s/Div.
Bottom Trace: Output; 50mV/Div., 1s/Div.Top Trace: Input; 50mV/Div., 1s/Div.
Bottom Trace: Output; 5V/Div., 100s/Div.Top Trace: Input; 5V/Div., 100s/Div.
Bottom Trace: Output; 50mV/Div., 1s/Div.Top Trace: Input; 50mV/Div., 1s/Div.
AN6668 Rev.1.00 Page 14 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
Micropower Comparator
The schematic diagram of a micropower comparator is shownin Figure 38. Quiescent power consumption of this circuit isabout 10W (Typ). When the comparator is strobed “ON”, theCA3080A becomes active and consumes 420W. Under theseconditions, the circuit responds to a differential input signal inabout 8s. By suitably biasing the CA3080A, the circuitresponse time can be decreased to about 150ns, but thepower consumption rises to 21mW.
The differential amplifier input common-mode range for the cir-cuit of Figure 38 is -1V to +10.5V. Voltage gain of the micropo-wer comparator is typically 130dB. For example, a 5V inputsignal will switch the output.
Appendix ICurrent Mirrors
The basic current-mirror, described in the beginning of this note,in its rudimentary form, is a transistor with a second transistor con-nected as a diode. Figure A shows this basic configuration of thecurrent-mirror. Q2 is a diode connected transistor. Because thisdiode-connected transistor is not in saturation and is “active”, the“diode” formed by this connection may be considered as a transis-tor with 100% feedback. Therefore, the base current still controlsthe collector current as is the case in normal transistor action, i.e.,IC = IB. If a current I1 is forced into the diode-connected transis-tor, the base-to-emitter voltage will rise until equilibrium is reachedand the total current being supplied is divided between the collec-tor and base regions. Thus, a base-to-emitter voltage is estab-lished in Q2 such that Q2 “sinks” the applied current I1.
Threshold VS
R1R1 R2+---------------------
=
T RCln=
R1R1 R2+---------------------(V+ - V-) + V+ - VD
V+-------------------------------------------------------------------------
FIGURE 37C. THRESHOLD DETECTOR
FIGURE 37D. MULTISTABLE CIRCUITS USING THE OTA AND CMOS INVERTER/AMPLIFIERS
CA3080
+
-
V+
3
7
4
6
5
V+
2 6 8
7
V-
13
14
1/3 CD4007A
OTA0.01F
5k
100k
C
R2
V+V-
10k
10k
R1
f1
2RCln2R1R2----------- 1+
--------------------------------------------
CA3080+
-
V+
27
4
6
5
V+
3
6 8
7
V-
13
14
1/3 CD4007A
OTA
1000pF
100k
1N914
R2
V-
V+
CA3080
+
-
V+
3
5
6
7
V+
2 6 8
7
V-
13
141/3 CD4007A
OTA
100k
R2 10k
10k
R1
10k
10k
R1
V-
10M
100k
VD
R
V+
T
56pF
R = R1||R2
5.1k
R
C
FIGURE 37A. ASTABLE MULTIVIBRATOR
FIGURE 37B. MONOSTABLE MULTIVIBRATOR
V-
FIGURE 37. SCHEMATIC DIAGRAM OF MICROPOWER COM-PARATOR USING THE CA3080A AND CMOS CD4007A
CA3080+
-
V+
2
5
6
7
STROBE
38
10
V-
14
CD4007A
OTA
V+
9V-
11
V-
4
7
13
V+P
N
6V+ = 12VV- = -2V
IABC10A
1.3M
12
OUTPUT
FIGURE 38A. DIODE - TRANSISTOR CURRENT SOURCE
Q1Q2
I1 I2
AN6668 Rev.1.00 Page 15 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
If the base of a second transistor (Q1) is connected to the base-to-collector junction of Q2, shown in Figure 39A, Q1 will also be ableto “sink” a current approximately equal to that flowing in the collec-tor lead of the diode-connected transistor Q2. This assumes thatboth transistors have identical characteristics, a prerequisiteestablished by the IC fabrication technique. The difference in cur-rent between the input current (I1) and the collector current (I2) oftransistor Q1, is due to the fact that the base-current for both tran-sistors is supplied from I1. Figure 39B shows this current division,using a “unit” of base current (1) to each transistor base. Thisbase current causes a collector current to flow in direct proportionto the of each transistor. The ratio of the “sinking” current I2 tothe input current I1 is therefore:
Thus, as increases, the output current (I2) approaches the inputcurrent (I1). The curves in Figure 39C show this ratio as a functionof the transistor When the transistor is equal to 100, for exam-ple, the difference between the two currents is only two percent.
Figure 39D shows a curve-tracer photograph of characteristics forthe circuit of Figure 39B. No consideration in this discussion isgiven to the variation of the transistor (Q1) collector current as afunction of its collector-to-emitter voltage. The output resistancecharacteristic of Q1 retains its similarity to that of a single transistoroperating under similar conditions. An improvement in its outputresistance characteristic can be made by the insertion of a diode-connected transistor in series with the emitter of Q1.
This diode-connected transistor (Q3 in Figure 39E) may be con-sidered as a current-sampling diode that senses the emitter-cur-rent of Q1 and adjusts the base current Q1 (via Q2) to maintain aconstant-current in I2. Because all controlling transistors areoperated at relatively fixed voltages, the previously discussedeffects due to voltage coefficients do not exist. The curve-tracerphotograph of Figure 39F shows the improved output resistancecharacteristics of the circuit of Figure 39E. (Compare Figure 39Dand 39F).
I2I1---- / 2+ ·
.=
FIGURE 38B. DIODE - TRANSISTOR CURRENT SOURCE. ANALYSIS OF CURRENT FLOW
Q1Q2
I1 I2
+ 2
2
11
I2I1-----
2+-------------=
FIGURE 38C. CURRENT TRANSFER RATIO I2/I1 vs TRANSISTOR BETA
1.5
1.41.31.2
1.11.0
0.9
0.80.70.6
0.50.4
0.30.20.1
0
CU
RR
EN
T T
RA
NS
FE
R R
AT
IO I 2
/I 1
1 10 100 1000
I2I1----
2+-------------=
I2I1----
22+
22 2+ +
-----------------------------=
TRANSISTOR BETA
FIGURE 38D. PHOTO SHOWING RESULTS OF FIGURE 39B
Scale: Horizontal = 2V/Div.Vertical = 1mA/Div.Steps = 1mA/STEP
FIGURE 38E. DIODE - 2 TRANSISTOR CURRENT SOURCE
Q3Q2
I1 I2
Q1
AN6668 Rev.1.00 Page 16 of 18Nov 1996
Applications of the CA3080 High-Performance
Operational Transconductance Amplifiers
Figure 39G shows the current-division within the mirror assum-ing a “unit” (1) of current in transistors (Q2 and Q3).
The resulting current transfer ratio
Figure 39C shows this equation plotted as a function of beta. Itis significant that the current transfer ratio (I2/I1) is improved bythe 2 term, and reduces the significance of the 2 + 2 term inthe denominator.
Conclusions
The Operational Transconductance Amplifier (OTA) is a uniquedevice with characteristics particularly suited to applications inmultiplexing, amplitude modulation, analog multiplication, gaincontrol, switching circuitry, multivibrators, comparators, and abroad spectrum of micropower circuitry. The CA3080 is idealfor use in conjunction with CMOS ICs being operated in the lin-ear mode.
Acknowledgments
The author is indebted to C. F. Wheatly for many helpfuldiscussions. Valued contributions in circuit evaluation weremade by A. J. Visioli Jr. and J. H. Klinger.
FIGURE 38F. PHOTO SHOWING RESULTS OF FIGURE 39E
Scale: Horizontal = 2V/Div.Vertical = 1mA/Div.Steps = 1mA/STEP
I2/I12
2+
22 2+ +
----------------------------- .=
FIGURE 38G. CURRENT FLOW ANALYSIS OF FIGURE 39E
Q3Q2
I1 I2
+ 2
2
11
I2I1----
2+ 1+-------------
2+ 1+------------- +
----------------------------2
2+
22 2+ +
-----------------------------==
Q1
2+ 1+-------------+
2+ 1+------------- 2+
1+-------------
AN6668 Rev.1.00 Page 17 of 18Nov 1996
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10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third
party in advance of the contents and conditions set forth in this document.
11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.