AnalogProcess Technologies

Analog Process Technology Roadmap

BiCom3 LBC7

Broadest, deepest analog process technology portfolio

Process differentiation is sustainable competitive advantage

Advanced analog technologies use fully depreciated equipment

New product development programs across four different process platforms

HPA07 A0xx

High PrecisionHigh Speed High Power High Density

Industry’s only SiGe NPN and PNP Precision thin film and capacitorLow parasitic capacitanceSOI & SiGe

High-Speed BiCMOS

Lowest 1/f noise in IndustryBest thin film resistor and capacitor 3 / 5V CMOSLow parasitics

High-PrecisionAnalog CMOS

Dense, low power CMOSAnalog friendly CMOS Low Vt CMOS PassivesDECMOS

High-DensityAnalog CMOS

Leading edge power LDMOSIndustry leading Cu technologyMulti-voltage capabilityVoltage-scaled DECMOS

High-Power BiCMOS

Low-Noise

High-Accuracy

High-Speed

Low Power

Widely Varying Voltage Ranges

Small Form Factors

Price Competitiveness

CustomersWant

TransistorsSpeedLinearityNoise

ResistorsTemperature coefficientLinearityMatching

CapacitorsLinearityMatching

TechnologyBiCom3BiCom3HVHPA07C05

Process Needs

Digital Signal Processor

Amplifier

Amplifier DataConverter

DataConverter

Power Management

Interface

Clocks & Timers

Temperature

Pressure

Position

Speed

Flow

Humidity

Sound

Light

The RealWorld

Signal Conditioning & Data Converter Needs

Logic

BiCom3: High Speed Fully Complementary Bipolar SiGe Process

Features Benefits

Extremely low distortion Improved accuracy

30-50% lower power operationHigher speeds / Excellent Dynamic Perf.

Very low 1/f noise and transistor internal resistance

Improved Signal-to-Noise Ratio (SNR)

Precision thin-film resistors High accuracyLow temperature variation

BiCom3

Silicon germanium (SiGe)Very fast transistors: 25GHz“Ideal” transistor characteristics

Silicon-on-Insulator (SOI)Dramatically reduced transistor sizeLow-voltage coefficient capacitance

Reduction in package sizeLower distortion from reduced parasitics

Metal-metal capacitor

BiCom3HV: High Speed & High Voltage 36V Bipolar SiGe Process

Features Benefits

40V transistors Higher voltage for industrial applications

Silicon-on-Insulator (SOI)Dramatically reduced transistor sizeLow-voltage coefficient capacitance

70% reduction in package sizeLower distortion

Silicon germanium (SiGe)Very fast transistors: 3GHz“Ideal” transistor characteristics

30-50% lower power operationHigher speeds

Very low noise Improved Signal-to-Noise Ratio (SNR)

Precision thin-film resistors High accuracy

BiCom3HV

Features Benefits

0.3 µm feature sizes Higher speeds and accuracyLow CapEx requirements

Metal-metal capacitor 4x increase in accuracy40% area reduction

5V isolated CMOS transistors Improved Signal-to-Noise Ratio (SNR)Integration of analog and digital

Improved Signal-to-Noise Ratio (SNR)

Precision thin-film resistors Lower test costs30% reduction in package size

Very low noise

HPA07

HPA07: High-Performance Analog CMOS

HPA07: Better Capacitors Mean Better A/D Converters

Capacitor Voltage Coefficient Comparison

0.9985

0.999

0.9995

1

1.0005

1.001

-10 -8 -6 -4 -2 0 2 4 6 8 10

V (v)

HPA07

ConventionalProcess

Voltage (V)

Cap

acito

r Rat

io

The Most Important Component in Precision A/D Converters

Error vs Code

Erro

r (LS

B)

Conventional Process

HPA07

Output Code

Error vs. Code

Erro

r (LS

B)

Features Benefits

0.18 µm feature sizes High Digital DensityReduced Analog Circuit Parasitics

Integrated resistors and capacitors optimized for analog design

Small die sizeLower total solution costReduced package size

Multiple voltage rating CMOS analog transistors (up to 6V)

Support for 5V and Li-ion battery connectionsOptimized transistor vs voltage

Improved Signal-to-Noise Ratio (SNR) and Total Harmonic Distortion (THD)

Isolated CMOS transistors

C05: 0.18um Analog Enhanced CMOS

Low voltage digital logic libraries Low Power Integrated Digital Processing

C05

LBC7: High-Power BiCMOS Process

Features Benefits

0.25 µm feature sizes 70% increase in gate densityLower CapEx requirements

3.3V isolated CMOS Integration of digital, analog and power functions

30V power transistors Up to 70% reduction in die sizeFaster switching speeds

Reduction in power transistor sizeReduction in die size

Rugged power transistors 3x improvement in reliabilityReduction in die size

Thick copper power buss

LBC7

Features Benefits

0.13 µm feature sizes 5x increase in gate densityReduction in package size

1.5V isolated CMOS Lower power functionsIntegration of analog and digital

20V power transistors50% reduction in transistor sizeIntegration of power and dense logic

Higher gate speedHigher gate density

Dense passives Reduction in die size

Copper metallization

A035: High-Density Analog CMOS

A035

Summary

Analog process technologies provide sustainable competitive advantage

Multiple process platforms optimized individually for speed, precision, power and density

Increasing commitment to analog process leadership