analy sis of microinhomogeneity of irradiated si by hall and magnetoresistance effects

22
10 th RD 50 Workshop, Vilnius, 2007.06.04 Analysis of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects J.Vaitkus, A.Mekys, J.Storasta Vilnius University, Institute of Materials Science and Applied Research

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Analy sis of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects. J.Vaitkus, A.Mekys, J.Storasta. Vilnius University, Institute of Materials Science and Applied Research. Basic principle. V. - +. A. Scattering by clusters:. Transient photo-Hall. - PowerPoint PPT Presentation

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Page 1: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Analysis of microinhomogeneity of irradiated Si by Hall and

magnetoresistance effects

J.Vaitkus, A.Mekys, J.Storasta

Vilnius University, Institute of Materials Science and Applied Research

Page 2: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

V

- + A

B

Scattering by clusters:

0

0

BMM B

rX

HHH BV

Vrf

Basic principle

Page 3: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

tNtvStH

0

11

em /*

2 4 6 8 10 12 14 16

10-3

10-2

10-1

J (cm-2s-1)

2,83*1023

1,22*1023

7,04*1022

3,03*1022

1,40*1022

6,02*1021

3,72*1021

1,71*1021

7,38*1020

2,54 s

JV61AK

(-1

cm-1

)

t (s)

0 10 20 30 40 50

-1000

-800

-600

-400

-200

0

J (cm-2s-1)

2,83*1023

1,22*1023

7,04*1022

3,03*1022

1,40*1022

6,02*1021

3,72*1021

1,71*1021

7,38*1020

JV61AK

H (

cm2 /V

s)

t (s)

x

iiii

iiiii

H BEttne

tAtnetE

)()(

)()()1( 2

Transient photo-Hall

Page 4: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

4 8 12 16 20 24

10-2

10-1

100

101

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67

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J (cm-2s-1)

2,83*1023

1,22*1023

7,04*1022

3,03*1022

1,40*1022

6,02*1021

3,72*1021

1,71*1021

1 7,38*1020

JV61AK

Y(t)

t (s)

3,6 3,9 4,2

100

0,33 eV

JV63AK

Y (s

)

1000/T (K-1)

1

01

H

H

U

UtY

tYconsttNtS

)/exp(~ kTEY

stssH N

n

n

Y

N

nZvA

n

Y

~2 00

As = 10-12cm-2 for ionized scattering center.

1

0

0000 1

111

H

H

H U

U

vU

wBE

tvSNNSSN

Calculation scheme

Page 5: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Hall factor

22 // CHHr

sEE

Hall scattering factor rH is defined by following expressions:

The relaxation time for individual scattering process often follows a power law:

Mechanism s rH rMP rMG

Ionized impurities -3/2 1.93 2.16 5.89

Neutral impurities 0 1 0 1

Acoustic phonons +1/2 1.18 0.38 1.77

Etc.

Variation of Hall scattering factor with total impurity density Nimp. In n-type Si.

Experimantal points: -x- 77K, -o- 300K. Solid curves: calculated (from Kirnas et al., 1974)

Page 6: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Inhomogeneities

R. H. Bube model :

l2VH

grain l1

l1

VA

1

2

2

1

21

l

lrH

[R. H. Bube, Appl. Phys. Lett. 13, 136 (1968)]

21

Page 7: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Inhomogeneities

V. G. Karpov, A. J. Shik and B. I. Schklovskij (1982):

kTb

H

exp0

The cells of typical clusters: I, II and III. Dashed lines indicates the equipotential lines

Page 8: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Inhomogeneities

J. D. Albrecht et al. (1999):

3222 315210608)2/(1/1exp

8

KrH

When the mobility is limited solely by dislocation scattering and this process can be modeled by scattering form a line charge, rH can be estimated by computing the

average momentum relaxation time. It follows from the analytic expression:

2

2*8

Bkm

Specifically, rH is smaller than but close to 1.93

K2 is the second order modified Bessel function and is

the Debye screening length

In summary, it is clear that to assume rH =1 in analyzing low-

field Hall data often leads to errors of 30% (and occasionally as much as 100%) in carrier density and mobility

Page 9: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Mobility from magnetoresistivity (cm2/Vs) at different B direction

Sample No.

Dose (cm-2) Hall mobility (cm2/Vs)

“B+” “B-“

Conductivity (S/cm)

Resistivity (kcm)

61 1E12 1128 1152 1150 2000 0.500 62 1E13 748 891 832 833 1,201 63 1E14 483 850 860 79,2 12,62 64 3E14 374 608 451 102 9,771 54 1E15 461 727 693 37,2 26,90 56 3E15 366 695 602 20,9 47,92 58 1E16 275 800 810 14,0 71,28 60 3E16 209 627 421 11,8 84,58

Page 10: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

220 230 240 250 260 270 280 290

1000

2000

3000 61 62 63 64 54 56 58 60

m (

cm2/V

s)

T (K)

100 120 140 160 180 200 220 240 260 280 300

0

200

400

600

800

1000

1200

H (

cm2 /V

s)

61 62 63 64 54 56 58 60

T (K)

Magnetoresistivity does not see the ionized scattering centers –regions where the the current flows are scatters different way.

This is not bipolarity, clusters barriers block the Hall voltage.

Page 11: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

1,4 1,5 1,6 1,7 1,8

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

,

-1cm

-1

61 62 63 64 54 56 58 60

(1000/T)1/4

(K)-1/4

4 5 6 7 8 9 10

1E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

0,36 eV

61 62 63 64 54 56 58 60

,

-1cm

-1

1000/T (K-1)

Mr. Mott was here…At higher dozes, amorphous zones appeared.

~0,36 eV activation found at the highest irradiation doze. The activation developed from lower value – that is not doping level, that is barrier.

Page 12: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

'4 20

ne

kTrDebye

Cluster’s potential overlaps when n’ decreases to 1011

cm-3 at irradiation doses above 1014 cm-2

Screening

EC

EV

EB1 EB2

Page 13: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

1012

1013

1014

1015

1016

10-6

10-5J (cm-2s-1)

2,83*1023

1,22*1023

7,04*1022

3,03*1022

1,40*1022

6,02*1021

3,72*1021

1,71*1021

7,38*1020

Y

(s

)

(cm-2)

The photo-carriers are trapped between barriers that they screen! EFFECTIVE darkness concentration seems low.

Page 14: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

1012

1013

1014

1015

1016

10-7

10-6

J (cm-2s-1)

2,83*1023

1,22*1023

7,04*1022

3,03*1022

1,40*1022

6,02*1021

3,72*1021

1,71*1021

7,38*1020

(

s)

(cm-2)

Photoconductivity relaxation

Page 15: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

FTIR

1000 200 0 3000 4 000 5000

0,9 5

1,0 0

1,0 5

T

(a.u

.)

1/ (cm-1)

62/61 63/61 64/61 54/61 56/61 58/61 60/61

Page 16: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Annealing 80C

0 6 11 17 22680

700

720

740

760

780

800

820

840

=3*1014 cm-2

m (

cm2 /V

s)

t (hrs)

B+ B-

Page 17: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

0 6 11 17 22500

520

540

560

580

600

620

H (

cm2 /V

s)

t (hrs)

Page 18: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

0 6 11 17 220,0004

0,0005

0,0006

0,0007

0,0008

0,0009

(S

/cm

)

t (hrs)

Page 19: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

210 280 350

0

200

400

600

initia l + 4 min 80C + 26 min 80C +24 hrs 80C

H (

cm

2 /Vs

)

T (K)

Page 20: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

T

/ S

/ N S /

kV

{$A+,B-,D-,E+,F-,G+,I-,L-,N+{$M 32768,0,65536}uses defaul,invisi,LPTproc,Hcokeithhol;Const KEITHLEY=1;W301_2=var TKl,temp1,temp2,temp3:sin

33.14159 mA20.0000 V

N2

N2

N /+

-

+-

+-

Time resolved photo-Hall

Page 21: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

Page 22: Analy sis  of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects

10 th RD 50 Workshop, Vilnius, 2007.06.04

THANK YOU FOR YOUR ATTENTION

Acknowledgments: I am grateful to Gunnar Lindstroem for complicated and interesting samples