analy sis of microinhomogeneity of irradiated si by hall and magnetoresistance effects
DESCRIPTION
Analy sis of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects. J.Vaitkus, A.Mekys, J.Storasta. Vilnius University, Institute of Materials Science and Applied Research. Basic principle. V. - +. A. Scattering by clusters:. Transient photo-Hall. - PowerPoint PPT PresentationTRANSCRIPT
10 th RD 50 Workshop, Vilnius, 2007.06.04
Analysis of microinhomogeneity of irradiated Si by Hall and
magnetoresistance effects
J.Vaitkus, A.Mekys, J.Storasta
Vilnius University, Institute of Materials Science and Applied Research
10 th RD 50 Workshop, Vilnius, 2007.06.04
V
- + A
B
Scattering by clusters:
0
0
BMM B
rX
HHH BV
Vrf
Basic principle
10 th RD 50 Workshop, Vilnius, 2007.06.04
tNtvStH
0
11
em /*
2 4 6 8 10 12 14 16
10-3
10-2
10-1
J (cm-2s-1)
2,83*1023
1,22*1023
7,04*1022
3,03*1022
1,40*1022
6,02*1021
3,72*1021
1,71*1021
7,38*1020
2,54 s
JV61AK
(-1
cm-1
)
t (s)
0 10 20 30 40 50
-1000
-800
-600
-400
-200
0
J (cm-2s-1)
2,83*1023
1,22*1023
7,04*1022
3,03*1022
1,40*1022
6,02*1021
3,72*1021
1,71*1021
7,38*1020
JV61AK
H (
cm2 /V
s)
t (s)
x
iiii
iiiii
H BEttne
tAtnetE
)()(
)()()1( 2
Transient photo-Hall
10 th RD 50 Workshop, Vilnius, 2007.06.04
4 8 12 16 20 24
10-2
10-1
100
101
283334384042444649505153545657596162636566
67
68
69
70717273
747576777879808182838485868788899091929394
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278279280281282283284285286287288289290291292293294
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800
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812
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816
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821
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830831832833
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883
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110811091110
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1263
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1272
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12741275
1276
12771278
1279
12801281
1282
12831284
1285
12861287
1288
12891290
J (cm-2s-1)
2,83*1023
1,22*1023
7,04*1022
3,03*1022
1,40*1022
6,02*1021
3,72*1021
1,71*1021
1 7,38*1020
JV61AK
Y(t)
t (s)
3,6 3,9 4,2
100
0,33 eV
JV63AK
Y (s
)
1000/T (K-1)
1
01
H
H
U
UtY
tYconsttNtS
)/exp(~ kTEY
stssH N
n
n
Y
N
nZvA
n
Y
~2 00
As = 10-12cm-2 for ionized scattering center.
1
0
0000 1
111
H
H
H U
U
vU
wBE
tvSNNSSN
Calculation scheme
10 th RD 50 Workshop, Vilnius, 2007.06.04
Hall factor
22 // CHHr
sEE
Hall scattering factor rH is defined by following expressions:
The relaxation time for individual scattering process often follows a power law:
Mechanism s rH rMP rMG
Ionized impurities -3/2 1.93 2.16 5.89
Neutral impurities 0 1 0 1
Acoustic phonons +1/2 1.18 0.38 1.77
Etc.
Variation of Hall scattering factor with total impurity density Nimp. In n-type Si.
Experimantal points: -x- 77K, -o- 300K. Solid curves: calculated (from Kirnas et al., 1974)
10 th RD 50 Workshop, Vilnius, 2007.06.04
Inhomogeneities
R. H. Bube model :
l2VH
grain l1
l1
VA
1
2
2
1
21
l
lrH
[R. H. Bube, Appl. Phys. Lett. 13, 136 (1968)]
21
10 th RD 50 Workshop, Vilnius, 2007.06.04
Inhomogeneities
V. G. Karpov, A. J. Shik and B. I. Schklovskij (1982):
kTb
H
exp0
The cells of typical clusters: I, II and III. Dashed lines indicates the equipotential lines
10 th RD 50 Workshop, Vilnius, 2007.06.04
Inhomogeneities
J. D. Albrecht et al. (1999):
3222 315210608)2/(1/1exp
8
KrH
When the mobility is limited solely by dislocation scattering and this process can be modeled by scattering form a line charge, rH can be estimated by computing the
average momentum relaxation time. It follows from the analytic expression:
2
2*8
Bkm
Specifically, rH is smaller than but close to 1.93
K2 is the second order modified Bessel function and is
the Debye screening length
In summary, it is clear that to assume rH =1 in analyzing low-
field Hall data often leads to errors of 30% (and occasionally as much as 100%) in carrier density and mobility
10 th RD 50 Workshop, Vilnius, 2007.06.04
Mobility from magnetoresistivity (cm2/Vs) at different B direction
Sample No.
Dose (cm-2) Hall mobility (cm2/Vs)
“B+” “B-“
Conductivity (S/cm)
Resistivity (kcm)
61 1E12 1128 1152 1150 2000 0.500 62 1E13 748 891 832 833 1,201 63 1E14 483 850 860 79,2 12,62 64 3E14 374 608 451 102 9,771 54 1E15 461 727 693 37,2 26,90 56 3E15 366 695 602 20,9 47,92 58 1E16 275 800 810 14,0 71,28 60 3E16 209 627 421 11,8 84,58
10 th RD 50 Workshop, Vilnius, 2007.06.04
220 230 240 250 260 270 280 290
1000
2000
3000 61 62 63 64 54 56 58 60
m (
cm2/V
s)
T (K)
100 120 140 160 180 200 220 240 260 280 300
0
200
400
600
800
1000
1200
H (
cm2 /V
s)
61 62 63 64 54 56 58 60
T (K)
Magnetoresistivity does not see the ionized scattering centers –regions where the the current flows are scatters different way.
This is not bipolarity, clusters barriers block the Hall voltage.
10 th RD 50 Workshop, Vilnius, 2007.06.04
1,4 1,5 1,6 1,7 1,8
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
,
-1cm
-1
61 62 63 64 54 56 58 60
(1000/T)1/4
(K)-1/4
4 5 6 7 8 9 10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0,36 eV
61 62 63 64 54 56 58 60
,
-1cm
-1
1000/T (K-1)
Mr. Mott was here…At higher dozes, amorphous zones appeared.
~0,36 eV activation found at the highest irradiation doze. The activation developed from lower value – that is not doping level, that is barrier.
10 th RD 50 Workshop, Vilnius, 2007.06.04
'4 20
ne
kTrDebye
Cluster’s potential overlaps when n’ decreases to 1011
cm-3 at irradiation doses above 1014 cm-2
Screening
EC
EV
EB1 EB2
10 th RD 50 Workshop, Vilnius, 2007.06.04
1012
1013
1014
1015
1016
10-6
10-5J (cm-2s-1)
2,83*1023
1,22*1023
7,04*1022
3,03*1022
1,40*1022
6,02*1021
3,72*1021
1,71*1021
7,38*1020
Y
(s
)
(cm-2)
The photo-carriers are trapped between barriers that they screen! EFFECTIVE darkness concentration seems low.
10 th RD 50 Workshop, Vilnius, 2007.06.04
1012
1013
1014
1015
1016
10-7
10-6
J (cm-2s-1)
2,83*1023
1,22*1023
7,04*1022
3,03*1022
1,40*1022
6,02*1021
3,72*1021
1,71*1021
7,38*1020
(
s)
(cm-2)
Photoconductivity relaxation
10 th RD 50 Workshop, Vilnius, 2007.06.04
FTIR
1000 200 0 3000 4 000 5000
0,9 5
1,0 0
1,0 5
T
(a.u
.)
1/ (cm-1)
62/61 63/61 64/61 54/61 56/61 58/61 60/61
10 th RD 50 Workshop, Vilnius, 2007.06.04
Annealing 80C
0 6 11 17 22680
700
720
740
760
780
800
820
840
=3*1014 cm-2
m (
cm2 /V
s)
t (hrs)
B+ B-
10 th RD 50 Workshop, Vilnius, 2007.06.04
0 6 11 17 22500
520
540
560
580
600
620
H (
cm2 /V
s)
t (hrs)
10 th RD 50 Workshop, Vilnius, 2007.06.04
0 6 11 17 220,0004
0,0005
0,0006
0,0007
0,0008
0,0009
(S
/cm
)
t (hrs)
10 th RD 50 Workshop, Vilnius, 2007.06.04
210 280 350
0
200
400
600
initia l + 4 min 80C + 26 min 80C +24 hrs 80C
H (
cm
2 /Vs
)
T (K)
10 th RD 50 Workshop, Vilnius, 2007.06.04
T
/ S
/ N S /
kV
{$A+,B-,D-,E+,F-,G+,I-,L-,N+{$M 32768,0,65536}uses defaul,invisi,LPTproc,Hcokeithhol;Const KEITHLEY=1;W301_2=var TKl,temp1,temp2,temp3:sin
33.14159 mA20.0000 V
N2
N2
N /+
-
+-
+-
Time resolved photo-Hall
10 th RD 50 Workshop, Vilnius, 2007.06.04
10 th RD 50 Workshop, Vilnius, 2007.06.04
THANK YOU FOR YOUR ATTENTION
Acknowledgments: I am grateful to Gunnar Lindstroem for complicated and interesting samples