arf leadership - asml leadership asml’s commitment to arf leadership continues with the newest...

EDITOR’S NOTE

Innovation leadership implies being out front

with new inventions, processes, or new ways of

working. As we enter the era of low k1, lithography

innovation leadership is needed more than ever

to extend the limits of optical lithography to high

volume manufacturing.

ASML has a proud history of l ithography

innovation leadership, ranging from the

introduction of Phase Grating Alignment in

1984 at the time of the company’s founding, to

our more recent revolutionary innovation, the

TWINSCAN platform, the industry’s fi rst and only

dual-stage lithography system.

The lead article in this issue of Images

showcases the TWINSCAN AT:1200B, a high NA

193-nm production tool, and the newest member

of the TWINSCAN family. This new system is

packed with innovations to enable high volume

manufacturing for 80 nm and beyond.

Another article in this issue describes

ASML’s integrated portfolio of products for en-

abling low k1 manufacturing—products like

LumenShaper, which allows customers to more

easily implement customized illumination to im-

prove their process latitude. And products like

LithoCruiser and MaskWeaver are described for

simultaneously optimizing scanner performance

and mask designs.

Two more articles on our Technology

Development Centers and Training Operations

describe innovative ways of working and

transferring knowledge, which ASML has

developed to enhance our customers’ ex-

perience and lithography productivity.

From steppers to scanners, innovation includes

the continuous evolution and improvement of our

platforms. This hallmark of ASML products’ value

of ownership is described in a pair of articles

on the “C” package productivity upgrades for

PAS 5500 and TWINSCAN, and the improved

imaging and overlay performance offered on the new

PAS 5500/350C.

Finally, it is important for you to know that at

ASML, our lithography innovations have always

been, and will continue to be, solely directed at

bringing more value to our customers’ lithography

operations.

Contents

4 ASML in the News

5-7 ASML ArF Leadership

Continues with

TWINSCAN AT:1200B;

a 0.85-NA Production Tool

for 80 nm Processing

8-11 Integrated Portfolio Enables

Low k1 Manufacturing

12-13 ASML’s Technology

Development Center –

Extending the Limits

for Customers

14-16 New TWINSCAN and

PAS 5500 Systems Increase

Productivity by up to 15%

18-19 ASML’s TWINSCAN

Training and Certifi cation

Program Sets Worldwide

Industry Standard in System

Performance and Support

20 ASML Extends its Portfolio

with 0.18-µm DUV Stepper

The LithographyInnovation Leaderby Mark Bigelow

IMAGES ASML’s CUSTOMER MAGAZINE

Editorial BoardDave Chavoustie

Paul van Attekum

Tom McGuire

Editor in ChiefMark Bigelow

Managing EditorRyan Young

Corporate EditorJane Mitchell

Contributing WritersNick Rowlands, Vivian Kim, Dorseda de Block,

Andrea Avery, Ryan Young

CirculationMichelle Herrick, Saskia Boeije, Emily Leung

© 2003, ASML.

ASML, ASM Lithography, TWINSCAN, PAS 5500, PAS 5000,

SA 5200, ATHENA, QUASAR, IRIS, FOCAL, CPL, DDL, Micralign,

Micrascan, 3DAlign, 2DStitching, 3DMetrology, MaskTools, LithoGuide,

MaskRigger, MaskWeaver, LithoCruiser, LumenShaper, Ultra-k1, Dose-

Mapper, SAMOS, ILIAS, and the ASML logo are trademarks of ASML

Holding N.V. or of affi liate companies. The trademarks may be used

either alone or in combination with a further product designation.

Starlith, AERIAL, and AERIAL II are trademarks of Carl Zeiss.

Nothing in this publication is intended to make representations with

regard to whether any trademark is registered or to suggest that any

sign other than those mentioned should not be considered to be a

trademark of ASML or of any third party.

ASML Images Summer 2003 3

IMAGINGTHE FUTUREIMAGINGTHE FUTURE

IT’S OUR COMMITMENT TO THE NEXT GENERATION

ASML produces the world’s most advanced lithography systems. Our technology

leadership enables IC makers to image today’s and tomorrow’s highest

performance chips.

ASML technology leadership is rooted in R&D and nourished by our people. We’re

committed to providing customers the right technology at the right time.

Technology leadership. It’s how we became the market leader. It’s how we’re

imaging the future. Find out more by visiting www.asml.com

4 ASML Images Summer 2003

ASML Maintains Momentum in China with Sale to ASMC

ASMC Selects ASML as “Tool of Choice” for New Facility

June 3, 2003 – ASML announced booking a multiple product order

from Advanced Semiconductor Manufacturing Corporation (ASMC),

a leading wafer foundry in Shanghai, China. The sale represents a

move forward in ASML’s bid to expand its position in the growing

Chinese chip market.

UMCi Chooses Advanced Lithography System from ASML

May 20, 2003 – ASML announced the sale of an advanced

lithography system to Singapore-based UMCi, a 300 nm foundry

joint venture company between UMC, Infineon Technologies and

Singapore’s Economic Development Board Investments (EDBI). At

full capacity, UMCi’s wafer foundry will produce up to 40,000 wafers

per month.

ASML Named World Leaderin Stepper Market

54 Percent Share of Market Captured by ASML

According to Analyst Firm

May 1, 2003 – ASML announced that the company has been named

the world leader in the semiconductor stepper market by Gartner

Dataquest, an independent research and consulting firm specializing

in the technology industry. The findings are based on market surveys

about 2002 revenues and unit sales from companies competing in the

capital equipment market.

ASML Secures Sale to Fuji Film Arch of Japan

Lithography System Selected to Support R&D

April 23, 2003 – ASML announced a sale in the Japanese market

to Fuji Film Arch (FFA), a major developer of photochemicals used in

semiconductor production. Japan is a market traditionally dominated

by local lithography suppliers.

ASML Delivers First Full-Field 157-nm Tool to IMEC

Other Customers Place Orders for 2003 Delivery

April 2, 2003 – ASML announced that it is delivering the industry’s

first full-field 157-nanometer step-and-scan tool to Europe’s leading

independent research and development chip consortium, Inter-

universities MicroElectronic Center (IMEC). Called the Micrascan VII,

the new system is the first 157-nm full-field tool able to create working

chips. IMEC will receive shipment in April 2003.

ASML and Samsung Sign Global IP Licensing Agreement

Patented Technology Enhances Imaging Performance

March 27, 2003 – ASML announced that Samsung Electronics Co.

Ltd. signed a licensing agreement for its Scattering Bar technology

to be deployed at Samsung’s semiconductor production facilities

worldwide. The patented ASML technology significantly enhances the

imaging performance for current and future technology generations.

Samsung is licensing the technology through the life of the patents.

ASML Receives Favorable Ruling from Full ITC

March 18, 2003 – ASML announced that the U.S. International

Trade Commission (ITC) in Washington D.C. ruled in favor of ASML on

all claims filed against the company by competitor Nikon Corporation

of Japan. The Commission denied the petition by Nikon seeking review

of the initial determination made by an administrative law judge on

January 29, 2003.

The Commission determined that ASML had not violated Section

337 of U.S. trade law, which governs investigations into allegations of

certain unfair practices in import trade.

Carl Zeiss Selects ASML MaskTools to Supply Advanced Lens Design Qualification Software

February 04, 2003 – ASML MaskTools announced that it has been

awarded a business contract by Carl Zeiss SMT AG to support the

design of high numerical aperture (NA) 193-nm and 157-nm lenses.

Lens quality and consistency are increasingly important factors as line

widths shrink to below half the wavelength of the exposure tool. ASML

MaskTools was engaged to develop a unique method and software

implementation for the lenses, improving layout cycle times while

maintaining design quality.

For complete information regarding these press announcements,

please refer to the press section of www.asml.com

ArF leadership

ASML’s commitment to ArF leadership continues

with the newest member of the proven dual-stage

TWINSCAN platform, the AT:1200B. This system

enables customers to achieve greater yield of more

sophisticated chips. The AT:1200B provides increased

productivity in high-volume manufacturing of 80-nm

applications. Equipped with ASML’s Ultra-k1 portfolio,

the AT:1200B meets the challenges of low-k1 manu-

facturing with subsystem improvements and new

functionality.

System Overview

The TWINSCAN AT:1200B 193-nm Step & Scan system is

a high-productivity, dual-stage, ArF lithography exposure tool

designed for high-volume production at 80-nm resolution. The

AT:1200B combines the imaging power of a variable (0.60–0.85)

Numerical Aperture (NA), Carl Zeiss Starlith 4X reduction lens with

AERIAL II illuminator technology.

Accelerating the Industry TowardLower k1 Applications

Dual wafer-stage technology provides maximum productivity

for both 300-mm and 200-mm applications, and enables

improvements to the focus and leveling operations to meet

stringent process control requirements. A 20-W ArF laser with

variable frequency control and a flexible, high-transmission

illuminator provide a production throughput of 103 wph (300 mm)

or 150 wph (200 mm), all at the lowest possible cost of operation.

New functionality on the AT:1200B includes flexible lens pupil

control, on-board measurement, and aerial image control from the

projection lens for the lowest possible aberrations, and minimi-

zation of stray light. This ensures performance for low k1 imaging.

Third Generation ArF Exposure Tool

ArF has become the technology of choice for leading edge

designs below 100 nm. The AT:1200B incorporates Carl Zeiss’

third generation ArF projection lens. This lens combines the high-

est NA and lowest number of aberrations of any ArF lens to date.

The system represents the latest addition to ASML’s well-estab-

lished ArF product range. The first shipments of ASML’s exposure

systems using 193-nm wavelength began in 1998 with the

PAS 5500/900 and later PAS 5500/950B. The PAS 5500/1100

and TWINSCAN AT:1100B were subsequently introduced in 2000

and 2001.

ASML ArF Leadership Continues with TWINSCAN AT:1200B, a 0.85-NA Production Tool for 80-nm Processingby Frank van de Mast & Alberto Pirati

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ASML in the News



Integrated System Metrology

An important new feature of the AT:1200B is Integrated

Lens Interferometer At Scanner (ILIAS) technology. ILIAS is an

interferometer-based tool built into the system that determines the

aberration levels of the projection optics. This technology allows

ASML to perform the optimal set-up of the system. In addition,

ILIAS is used for system qualification and monitoring, both in the

factory as well as at the customer’s site. The benefits of ILIAS are

improved metrology accuracy and improved aberration control.

Demonstrated System Performance

Apart from the increased NA of the projection optics, further

improvements in the imaging performance of the AT:1200B come

from optimizing the contributions of the exposure tool to the Critical

Dimension Uniformity (CDU). These CDU contributions include

the control of stage dynamics, focus, dose, stray light, aberration

corrections, and lens pupil filling. On the AT:1200B, the CDU

is measured using the Electrical Linewidth Measurement (ELM)

technique, an excellent method for detailed CDU analysis that

offers the advantages of improved speed and repeatability.

The following cross-section images show the results from

experiments performed without an interface between the exposure

system and the FSI POLARIS 3500 lithography cluster.

The exposure conditions for the 80-nm lines with a binary

mask are: 160-nm pitch, NA = 0.85,σo/ σ

i = 0.88/58, and annular

illumination.

Cross-section images of 80-nm lines with 160-nm pitch over a 0.45-µm focus range

The exposure conditions for the 100-nm dense contact holes

with a binary mask are: 200-nm pitch, NA=0.85, σo/ σ

i = 0.93/0.69,

and QUASAR (30 degree pole) illumination.

Cross-section images of 100-nm contact holes with 200-nm pitch over a 0.5-µm focus range

(Continued)

Meeting the Challenge

With the release of our third-generation ArF system, ASML

moves closer to meeting one of our ultimate challenges—to provide

300-mm wafer productivity and to extend the limits of optical

lithography to 70 nm. Looking to the coming years, the International

Technology Road map for Semiconductors (ITRS) shows that all

three major device categories (DRAM, MPU, ASIC LP) will have

sub-100-nm imaging as a leading requirement. We anticipate,

with the technology nodes starting in 2004 and extending through

to 2006, that ArF technology will be the dominant wavelength

for enabling these aggressive designs. With its high-NA, ArF

optics and enabling features for low-k1 imaging, the TWINSCAN

AT:1200B is ready to meet these challenges.

Technology Leadership

• Proven dual-stage technology for volume manufacturing

• Embedded technology for low-k1 imaging

• High NA ArF leadership

• ILIAS for improved metrology accuracy and aberration control

System Overview

Field Size: 26 mm x 33 mm

Numerical Aperture (NA): 0.60-0.85

Partial Coherence Range:* 0.40-0.93

Intensity: ≥ 880 mW/cm2

Laser: 20 W

Productivity

300-mm wafer size 109 shots, 16 mm x 32 mm, 20 mJ/cm2:

≥ 103 wph

200-mm wafer size 46 shots, 16 mm x 32 mm, 20 mJ/cm2:

≥ 150 wph

* Advanced Illumination available including dipole, QUASAR, and extended sigma ranges


TWINSCAN AT:1200BSpecifications

low k1 manufacturing

The parameter k1, which is defi ned by Rayleigh’s

equation (R=k1(λ/NA)), provides an approximate measure

of lithography process manufacturability. Manufacturing

at lower k1 values can be achieved by ensuring that the

tool operating window remains inside the overlapping

process window. The tool operating window can be

improved by fi ne-tuning parameters such as focus,

dose, dynamics, and lens aberrations. The overlapping

process window is defi ned as the latitude available

to manufacture specifi c feature sizes based on the

device specifi cations and expected Critical Dimension

(CD) budget. With the progression to a lower k1 value,

however, the overlapping process window shrinks

(see fi gure 1). When this problem occurs, improving

the tool operating window and/or increasing the

overlapping process window improves resolution for

acceptable yield performance.

The challenges of manufacturing at low k1 require both em-

bedded functionality on the scanner that ensures manufacturing

capability and integrated technology solutions designed to ensure

process yield. For example, tasks such as mask, resist, process,

and scanner system optimizations often need to be performed

simultaneously due to their interdependence. Additionally, tools are

needed that provide more in-depth metrology and data analysis. To

address these needs, ASML has created a portfolio of integrated

low k1 lithography products and technologies (see fi gure 3) that

complement and further extend the inherent capabilities of our

Step & Scan systems. While these solutions are designed to

enable customers to operate in the realm of low k1 lithography, they

can also be applied to boost yield for existing processes.

LumenShaper and QUASAR for Customized Made-to-Order Illumination Shapes

To optimize process latitude, especially at resolutions of

130 nm and below, ASML’s Step & Scan systems are equipped

with the AERIAL II illuminator, which provides high intensity for

both conventional and annular illumination. An extension of the

AERIAL II illuminator, the QUASAR off-axis illumination module

enables multipole illumination. QUASAR includes an automatic

Diffractive Optical Element (DOE) exchanger that enables the

production engineer to select from a library of standard illumination

shapes. These illumination shapes enable users to increase their

depth of focus and Exposure Latitude, while reducing Mask Error

Factors for the most advanced layers of integrated circuits.

ASML recently announced a new product, LumenShaper, to

support customers who wish to design a fully customized illumin-

ation shape that optimizes their layer-specifi c process window (see

fi gure 2). LumenShaper together with QUASAR make it possible

to enlarge the overlapping process window, resulting in increased

process yield at low k1 values.

LithoCruiser for Low k1 Process Simulation, Analysis, and Optimization

To truly optimize a low k1 lithography process, customized

illumination, provided by LumenShaper and QUASAR, must

be combined with other resolution enhancing technologies.

ASML’s LithoCruiser is an integrated software suite for low k1

lithography development that enables the user to optimize multiple

resolution enhancement technologies and analyze their signifi cant

interactions.

LithoCruiser simultaneously analyzes and optimizes both the

scanner performance and mask optical proximity corrections.

LithoCruiser enables users to optimize the overlapping process

window for specifi c design features by optimizing the NA and σ, as

well as illumination modes including annular (traditional), multipole

4 or extreme σ (exotic) and fully customized (layer specifi c). In

addition, LithoCruiser will apply both rule- and model-based optical

proximity corrections, (including Scattering Bars) to a specifi c

design, while using the optimized illumination mode and settings.

To ensure accurate analysis and optimization of imaging

performance, LithoCruiser is tightly integrated with ASML’s leading

edge Step & Scan systems utilizing specifi c illumination profi les,

lens data, DOE libraries and scanner-specifi c boundary conditions.

LithoCruiser can be used to build an optimized low k1 lithography

process very quickly and effi ciently before committing a single

mask or wafer to production.

Integrated Portfolio Enables Low k1 Manufacturingby Rard de Leeuw, Keith Gronlund & John Doering


MaskWeaver, Scattering Bars, CPL, and DDL for Optimal Low k1 Mask Development

ASML’s MaskWeaver software suite extends the limits of

low k1 lithography through mask RET design optimization for

sub-100-nm technology development. MaskWeaver utilizes the

illumination settings and profi le optimized by LithoCruiser and

applies the optimal Resolution Enhancement Technologies (RET)

and Optical Proximity Correction (OPC) treatment to the design.

MaskWeaver provides full-chip, hierarchical, model-based

OPC capability for the implementation of ASML’s patented RET

mask technologies: Scattering Bar technology, Chromeless Phase

Lithography (CPL Technology), and Double Dipole Lithography

(DDL Technology). These innovative technologies enable mask

design and wafer imaging for critical layers at the 90-nm node

down to the 45-nm node. MaskWeaver performs model-based

OPC treatment using a proprietary model, which is calibrated to

actual wafer results. It also implements a full set of rule-based OPC

treatments, including biasing, serifs, and hammerheads.

Scattering Bar technology is a proven and effective OPC

technique that enhances wafer imaging performance. They are

sub-resolution features that are placed on a photomask next to

isolated and semi-isolated features, enabling them to image like

the dense features. ASML MaskTools invented and pioneered the

use of Scattering Bars. They have since been successfully used in

production by many leading semiconductor manufacturers.

CPL technology is an ASML MaskTools single-mask single-

exposure RET mask design conversion technology that enables

low k1 lithography for the 65-nm and 45-nm nodes. CPL utilizes

ASML’s advanced Step & Scan system’s off-axis illumination and

high NA capabilities to maximize the resolution and process latitude

capabilities for a given lithography system. Since CPL requires only

one exposure mask, and the mask manufacturing process utilizes

standard binary mask type processes, CPL is a cost effective

solution for meeting the most demanding low k1 processes.

DDL technology is an ASML MaskTools proprietary and

patented model-based layout conversion technology for horizontal

and vertical lines. It utilizes two simple binary masks and ASML’s

advanced Step & Scan system’s off-axis illumination and dipole

capabilities to enable very low k1 requirements to meet the needs

of the 65-nm and 45-nm nodes. Since the masks are standard

binary, it has the fastest and simplest mask making requirements

Figure 1Smaller process windows make system performance, RET strategy, and process parameter optimization integration that much more critical for yield

Figure 2Optimized illumination processExample: brickwall feature

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Our Ultra-k1 packages are designed to work in harmony to

help customers achieve low k1 processes by fine-tuning system

performance and expanding their process windows. Two examples

of our Ultra-k1 solutions working together include advanced CD

correction and process window expansion.

The advanced CD correction solutions, consist of LithoGuide,

LithoCruiser and DoseMapper and provide maximized CD uniformity

across a single device or among multiple devices. A customer will

use LithoGuide to obtain the key scanner data input on parameters

such as the CD characterization and resist sensitivity. Based on

this input, LithoCruiser is used as the analysis tool to convert the

design feature size to the resist CD. It identifies the area where an

energy change is necessary to achieve the desired CD. As the final

step, DoseMapper is used to implement the energy change at the

wafer level. By correcting CD errors on the mask, customers can

reclaim exposure latitude and usable DoF, while maintaining a high

product yield.

Another way in which ASML’s Ultra-k1 portfolio enables low k

1

lithography in manufacturing is by process window expansion.

Increasing the process window involves maximizing the exposure

latitude and also extending the depth of focus. For this to happen,

process window expansion requires NA/σ, illumination and OPC

design to be optimized concurrently. LithoGuide is used to secure

lens and illumination parameters, with LithoCruiser to optimize

NA/σ and illumination. Resolution enhancement technologies such

as OPC and Scattering Bars are applied with LithoCruiser to further

enhance the process window. CPL or DDL technologies enabled

by MaskWeaver can also be applied. LithoCruiser’s concurrent

optimization saves time and results in a higher level of process

window expansion than is traditionally obtained using manual and

serial process development methodologies. The optimized process

is then implemented in a mask design using MaskWeaver, in

illumination shaping using LumenShaper and QUASAR, and in the

illumination settings using ASML’s standard AERIAL II capabilities.

Drive to the Limits of Optical Lithography with Ultra-k1 Solutions

ASML’s Ultra-k1

portfolio of solutions enables customers to

achieve the ultimate in system performance and process window

improvements required to extend high volume manufacturing to

the realm of low k1 lithography. Ultra-k

1 enables customers to

accelerate productivity by improving the tool operating window and

extending the overlapping process window for existing processes.

Ultra-k1 will allow our customers to drive with confidence down the

low k1 lithography road map and extend their success and global

competitiveness.

and is the lowest cost low k1 RET mask solution. DDL is an

excellent choice for small-lot specialty requirements as seen at

foundries and ASIC manufacturers.

LithoGuide for Precise Tool Measurement

As semiconductor manufacturers enter the low k1 era, the

ability to closely monitor key parameters in their scanner systems

becomes critical. LithoGuide enables the data input needed to

optimize imaging performance through close tool measurement

and monitoring. LithoGuide’s integrated metrology features,

such as Integrated Lens Interferometry At Scanner (ILIAS) and

Stray Light At Multiple Object Sizes (SAMOS), employ waferless

measurement techniques using an aerial image to produce an

accurate assessment of the scanner’s optical performance. This

can be used as input for mask design. ILIAS captures full-field

interferometry data to measure lens aberrations, and SAMOS

measures short-range, mid-range, and long-range stray light.

LithoGuide also provides the ability to measure the spatial

intensity distribution across the pupil of the reduction lens. It is

a waferless measurement technique and thereby provides an

instantaneous measurement of the system’s performance without

the possible inaccuracies introduced by photoresist processing or

human error. The data can be used as input for design optimization

to significantly improve the tool operating window. LithoGuide

provides an optimum solution to map and monitor the scanner’s

critical parameters.

DoseMapper for Enhanced CD Control

Scheduled for release during the second half of this year,

DoseMapper helps customers compensate for the performance

of their lithography process and tighten further their control of CD.

DoseMapper allows customers to create a continuous wafer-scale

dose map. DoseMapper improves the tool operating window

and provides greater process latitude by enabling customers to

correct for CD variations over the entire wafer, resulting in better

CD uniformity.

An Integrated Portfolio of Low k1 Solutions Paves the Way to Ultra-k1 Performance

Ultra-k1 is ASML’s integrated portfolio of low k

1 solutions to help

customers achieve the ultimate performance for the challenging

era of low k1 lithography. Ultra-k

1 is our vision of packaged

low k1 solutions to ensure customers achieve high yields for volume

manufacturing at the extended limits of optical lithography.

Figure 3

Ultra-k1 portfolio

Customized Illumination Profile• QUASAR & AERIAL: Annular, quadrupole, customized illumination

• LumenShaper: Customized illumination design SW and HW manufacturing service

Mask Design Optimization for Process Latitude• LithoCruiser: Simultaneous scanner and mask optimization

• MaskWeaver: Production ready OPC with CPL/DDL implementation

• CPL: Chromeless Phase Lithography

• DDL: Double Dipole Lithography

Aberration Measurement, Set-up, and Control• ILIAS: Full-field interferometry data

• SAMOS: Stray light measurement

• TAMIS: Coma and spherical aberration set-up

• LithoGuide: Integrated measurement and monitoring

Process Variability Compensation• Extended Exposure

• DoseMapper: Intrafield dose correction and CD analysis

LumenShaper and QUASAR:

Off-axis illumination optimization

LithoCruiser: Low k1 lithography

optimization software suite

MaskWeaver: Mask RET development software suite

Chromeless Phase Lithography (CPL technology):

Single mask with very low k

1 RET

Double Dipole Lithography (DDL technology):

Two-mask decomposition with very low k

1 RET

LithoGuide: Integrated metrology tool set

DoseMapper: CD control package

Ultra-k1ASML’s Integrated Low k1 Portfolio

10 ASML Images Summer 2003 ASML Images Summer 2003 11

TDC scientists work closely with customers to facilitate Joint

Development Projects (JDPs). In cooperation with account

managers at the customer site and development engineers, JDPs

are initiated to develop new products or to drive tool performance

to improve the customer’s product. JDPs enable our customers to

refine their design processes to more closely match our system

capabilities. Doing so enables customers to make better products

using our systems. The work done in these projects also offers

ASML great insight into how our customers use ASML equipment,

what type of problems arise, how to solve them, and how to

best match ASML’s systems to our customers’ needs. From the

continuous and significant data collected, ASML receives early

insight to formulate accurate long-term product and technology

road maps that better meet market needs. This work is executed

in cooperation with our customer support and equipment

engineers to ensure proper implementation of the results received

from the JDPs.

TDC also engages with partner/supplier companies who

support different parts of the lithography process such as masks,

photoresists, optics, and lasers to determine more accurately

when, how, and to what extent we are able to enhance our

technology and imaging capabilities.

“TDC was initiated to add value to our customers. Working with

customers to solve low k1 imaging, 193-nm and 157-nm issues

enhances the customer’s process and production as well as

provides insight into future requirements,” concludes Arnold. By

working closely with other ASML engineers in Veldhoven, Wilton,

and ASML MaskTools, the TDC is helping refine tool use today and

define products for tomorrow.

process expertise

Extending the traditional limits of optical lithography

is an increasingly common requirement from our cus-

tomers. ASML’s Technology Development Center (TDC)

is committed both to enabling efficient utilization of

ASML tools to meet advanced customers’ process

requirements and to understanding their long term

technology needs. In close collaboration with

Development Engineering and MaskTools, TDC works

intensively with customers to establish high yielding

processes, as well as higher value IC products through

effective use of our innovative technology.

A New Era in Technology Creates the Need for ASML’s TDC

To meet the needs of the continued shrink in critical dimensions

below the half illumination wavelength, the technological

complexity of lithography tools has increased significantly. This

has created a new era of scientific challenges such as lower k1

values and decreased process tolerances. As a result, there is

a need to provide customers with advanced process-related

technical support to get the maximum value from their new tool,

while meeting the market demands at the right time.

“It was logical that our customers expected more from us, the

makers of the tool, and to give them the best advice on how to

improve performance through specific tool applications. In the past,

Technology, Development, and Customer Support departments

collaborated to support the customer. However, with the ever-

growing advances in technology, it became evident that to ensure

our customers’ success with our tools, even more dedicated time

to them was required by personnel closely located to the fab

manager and sites,” remarks Martin van den Brink, Executive Vice

President of Marketing & Technology.

It was with this objective in mind that ASML created TDC. TDC

intensifies ASML’s expertise in the areas of imaging, optics, reticles,

process integration and photoresist technology. “This added

expertise working in concert with account teams, development and

customer support resources enables customers to quickly adopt

new tools and technologies that bring them to full manufacturing

capacity in a timely manner,” emphasizes Bill Arnold, Chief Scientist

and Vice President of the Technology Development Center.

The TDC was established in the United States in 1999

and today is composed of leading senior lithography scientists

with strong academic backgrounds, expertise in research and

development, and extensive work experience as both a customer

and a vendor in a fab environment. “Customers benefit from a

dialogue with ASML staff who understand their current and future

technology requirements from a high volume production fab

perspective,” comments Mircea Dusa, a TDC scientist and ASML

Fellow specializing in lithography process integration.

In 2001, a TDC was also established in Hsin-chu, Taiwan to

serve customers throughout Asia. This group operates under the

leadership of Alek Chen, Senior Imaging Scientist and Director of

TDC, Asia.

Extending the Tool’s Imaging Performance

TDC specializes in understanding our customers’ advanced

technology needs while optimizing the imaging performance of

the existing installed base of advanced products in the following

areas:

• Customized illumination for specific layer designs

• Optimal mask choice and enhancements

• Resist process improvements

• Resolution of materials/manufacturing process integration issues

• Ultra high NA optics applications

• Simulation of new imaging techniques and tools

• Advanced technologies in focus and overlay

ASML’s Technology Development Center –Extending the Limits for Customersby Bill Arnold & Kevin Cummings

Customer Focus

• TDC is focused on enabling efficient utilization of existing leading-edge ASML tools in their fabs and understanding our customers’ long-term technology requirements

• Joint Development Projects (JDPs) enable customers to refine design processes to more closely match system capabilities

• As part of ASML’s matrixed organization, TDC provides process expertise to support advanced customers

Customer Focused Process Development Solutions

TDC MaskTools Development Engineering

Customer

Process Integration & Modeling

Reticles

Photoresists

Low k1 Imaging

Low k1 Software

RET Mask & OPC Technologies

Tool Definition and Realization

Imaging Technology (including low k1)

Overlay & Focus

ProcessDevelopment Requirements

Customers

12 ASML Images Summer 2003 ASML Images Summer 2003 13


PAS 5500 Product Overview

The PAS 5500/1150C 193-nm Step & Scan system enables

90-nm mass production. This system, the industry’s leading

resolution tool, stretches the current technology to its limit. The

PAS 5500/1150C combines the proven imaging power of the

0.75 NA four-times-reduction lens with AERIAL II illumination

technology. An array of optional, advanced illumination-

enhancement technologies is available for this system. The

system is equipped with ATHENA and reticle blue align,

providing an increased accuracy of single machine overlay of

less than 12 nm. The 8-Spot Level Sensor improves focus and

leveling, particularly for edge dies, for better process control.

Highly line-narrowed 20-W ArF lasers with variable frequency

control, in combination with the high optical transmission of

the complete system, provide a production throughput of

135 wph for 200-mm wafers.

The introduction of the PAS 5500/850C DUV Step & Scan

system for 110-nm mass production stems from continuous

improvements to the industry’s highest-NA optical system, the

PAS 5500/850. The optional high-sigma DOE that is available

for this system can even extend the production resolution of the

PAS 5500/850C to 100 nm. Combining the imaging power of

a 0.80 NA four-times-reduction lens with AERIAL II illumination

technology, this system offers unprecedented imaging power

flexibility. Like the PAS 5500/1150C, ATHENA and reticle blue

align provide single machine overlay accuracy, which on the

PAS 5500/850C is less than 15 nm. A 320-mm/sec high-

speed wafer stage, in combination with highly line-narrowed

20-W KrF lasers and the high optical transmission of the

system, provides a production throughput of 135 wph for

200-mm wafers.

PAS 5500/1150C 90-nm dense lines performance. A binary mask was used, and the illumination conditions were as follows: NA= 0.75, and sigma 0.89/0.65.

-0.30 µm -0.25 µm -0.20 µm -0.15 µm -0.10 µm -0.05 µm 0.0 µm

0.05 µm 0.10 µm 0.15 µm 0.20 µm 0.25 µm 0.30 µm

increased productivity

ASML has developed performance enhancements

for its TWINSCAN and PAS 5500 lithography systems.

Called TWINSCAN C and PAS 5500 C, the new

enhancements increase wafer output for 300-mm and

200-mm wafers, at real production conditions, while

improving imaging, alignment, and leveling accuracy.

Realization of these productivity improvements is due mainly

to the increased stage speeds in these platforms. However,

other enhancements on these systems include unprecedented

imaging power and process control that drive production reso-

lution on ArF systems down to 90 nm and on KrF systems down

to 100 nm.

The TWINSCAN C product enhancements will be available

on four systems: the AT:400C, AT:750C, AT:850C, and

AT:1150C. The PAS 5500 C product enhancements are found in the

PAS 5500/850C and PAS 5500/1150C. These new systems

began shipping in the second quarter of 2003.

Optimized Imaging with AERIAL II Illumination Technology—Reduction of k1 Without Intensity or Throughput Loss

A common element in both the TWINSCAN and PAS 5500

systems is AERIAL II illumination technology. This technology

enables continuous, variable, conventional illumination, and off-

axis illumination with zoom optics for maintaining high throughput.

There are a number of optional modules available for the new

TWINSCAN C and PAS 5500 C systems. These optional modules

include the QUASAR Multipole Illumination Module—a software-

controlled automatic Diffractive Optical Element (DOE) exchanger

that maximizes the flexibility of the AERIAL II illuminator—and a high

sigma DOE, used in combination with QUASAR that extends the

sigma range.

DOEs, whether standard, or customized through LumenShaper,

work in concert with the full pupil-shaping flexibility of the AERIAL II

illuminator and the QUASAR off-axis illumination module to generate

the optimum pupil shape in the imaging tool, while maintaining high

illumination intensity.

This use of DOE technology allows customers to fine tune the

imaging of their system to meet their specific purposes, while

improving imaging performance at low k1. This optimization of the

illumination can bring substantial improvements to the process

window.

A software-controlled automatic DOE exchanger maximizes the flexibility of the AERIAL II illuminator. The DOE shapes shown, from top left to bottom right, are: conventional, low sigma, annular, high sigma, QUASAR, cQuad, dipole 35° (X), and dipole 90° (Y).

Value of Ownership

• I-Line, KrF and ArF production improvements of up to 15%

• Production resolutions of 90 nm for ArF systems, and 100 nm for KrF systems

• LumenShaper and QUASAR: Off-axis illumination optimization

• Improved focus and leveling for better process control

New TWINSCAN and PAS 5500 SystemsIncrease Productivity by up to 15%by Ron Kool & Rob van Keulen


TWINSCAN Product Overview

The TWINSCAN AT:1150C 193-nm Step & Scan system is a high-

productivity, dual-stage, ArF lithography tool designed for volume 300-

mm wafer production at 90-nm resolution. The AT:1150C combines

the imaging power of a variable (0.50–0.75) Numerical Aperture (NA),

Carl Zeiss Starlith, four-times-reduction lens with AERIAL II illuminator

technology. The level sensor improves focus and leveling, particularly

on edge dies, for better process control. A 20-W ArF laser with variable

frequency control, in combination with the high optical transmission of

the complete system, provides a production throughput of 107 wph

for 300-mm wafers.

The TWINSCAN AT:850C is a 248-nm KrF system capable of

volume 300-mm wafer production at a resolution of 110 nm and

below. The imaging power of this system comes from a variable

(0.55–0.80) NA, Starlith, four-times-reduction lens in combination with

AERIAL II and QUASAR illuminator technology. The AT:850C extends

ASML’s proven KrF technology to 100-nm applications, and next

generation chip design rules can exploit the improved overlay from

ATHENA. Furthermore, innovative off-axis wafer mapping improves

the focus and leveling capabilities of this system. Highly line-narrowed

20-W KrF lasers with variable frequency control, in combination

with the high optical transmission of the optical system, provide

a production throughput of 112 wph for 300-mm wafers. A high

power, 30-W laser is available as a factory option.

The TWINSCAN AT:750C continues the trend of high-productivity

made possible by dual-stage technology. This 248-nm KrF Step &

Scan system drives production resolutions on 300-mm wafers down

to 130 nm. The combination of the variable (0.50–0.70) NA lens with

AERIAL II illuminator technology again offers powerful imaging. The

level sensor improves focus and leveling, particularly on edge dies,

for better process control. Highly line-narrowed 20-W KrF lasers

with variable frequency control, in combination with the high optical

transmission of the optical system, provide a production throughput

of 112 wph for 300-mm wafers.

A 365-nm Step & Scan system, the TWINSCAN AT:400C,

completes the enhanced TWINSCAN C product range. This

high-productivity, dual-stage system offers volume 300-mm wafer

production at a resolution of 280 nm. A high power 5-kW Hg lamp

and fast stages ensure maximum productivity by minimizing the

exposure scanning time per field and the stepping time between

fields. The level sensor in combination with the TWINSCAN leveling

approach virtually eliminates differences between inner dies and

edge dies and ensures a high yield across the entire wafer. Further

enhancements on this system include fast reticle exchange times

and lot streaming.

TWINSCAN AT:850C 90-nm dense lines (pitch 1:1) performance. A binary mask was used, and the illumination conditions were as follows: cQuad illumination, NA = 0.8, and sigma 0.9/0.72.

-0.50 µm -0.45 µm -0.40 µm -0.35 µm -0.30 µm -0.25 µm -0.20 µm

90.6 nm 87.9 nm 92.1 nm 92.5 nm 91.2 nm 94.2 nm 94.4 nm

-0.15 µm -0.10 µm -0.05 µm 0.0 µm +0.05 µm +0.10 µm +0.15 µm

92.9 nm 90.2 nm 92.7 nm 92.5 nm 89.7 nm 88.7 nm 81.1 nm


ASML is committed to technology leadership. ASML TWINSCAN™ lithography

systems deliver the highest productivity at the limits of optical lithography.

TWINSCAN is the only platform that combines world-class measurement accuracy

with simultaneous, nonstop wafer imaging because it’s the only system with dual stages.

Why have the world’s leaders in 300 mm productivity chosen TWINSCAN?

Dual stages. Race them for yourself on our test track at www.asml.com/dualstages.

THE WORLD’S ONLY DUAL-STAGE LITHOGRAPHY SYSTEM

RACE AHEAD WITHTWINSCANRACE AHEAD WITHTWINSCAN

training & certification

Even as semiconductor technology continues to

become increasingly sophisticated, ASML maintains its

position as the world’s leading supplier of lithographic

imaging solutions. Contributing significantly to this

status is ASML’s demonstrated dedication to optimal

system performance and use. Through commitment

to customer satisfaction, ASML has developed the

industry-leading TWINSCAN Training and Certification

Program, aimed at ensuring that every TWINSCAN

service engineer worldwide has the same high level of

proficiency and expertise.

“Our customers deserve more than just leading-edge tech-

nology,” says Jerry Holtzclaw, U.S. Training Manager. “They also

deserve the security of knowing that their engineers have the skills

required to optimize system performance and use.”

Courses to Suit Every Engineer at Every Level

The wide variety of training programs offered—ranging from self-

paced multimedia courses incorporating e-learning to intensive,

hands-on practical training—ensures that both customer engineers

and ASML engineers have those skills so crucial to system support.

Graham Murray, Director Worldwide Training, explains how ASML’s

performance-based Training and Certification Program provides

variable paths to certification based on the demonstrated abilities

of the engineer. “We provide four distinct training paths to suit an

individual engineer’s experience,” Murray says. “This ensures that,

whatever the program entry point, certification is achieved to the

same high standard.” (See figure 1.)

The courses offered as a part of the TWINSCAN Training and

Certification Program follow a logical progression, thoroughly

covering material in each level before advancing to the next.

For example, the Level 1 System Introduction Course, which

is the initial course for all engineers, technicians, and operators

assigned to any TWINSCAN support capacity, provides students

with a basic introduction to the machine operation and an

in-depth explanation of each subsystem. This course is available

in both traditional and multimedia formats. In addition to this

Level 1 Course, the Level 1 Introduction and Operations Course

is a course designed specifically for on-site delivery to customer

TWINSCAN Operators and Technicians, and thoroughly covers

machine operations and safety.

Figure 1

Wk. Path 4

New Hire

Path 3

Lithography Experienced

Path 2

Experienced 5500 Engineers

Path 1

Experienced TWINSCAN Engineers

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

ASML’s TWINSCAN Training and Certification Program Sets Worldwide Industry Standard in System Performance and Support

Hands-on Instruction at Worldwide Training Facilities

The Level 2 course, Preventative Maintenance, addresses the

needs of maintenance engineers and technicians. The focus is

on hands-on, performance-based training and experience. During

this two-week course, students spend eighty percent of their

time in profitable hands-on learning, performing preventative

maintenance tasks on dedicated training equipment. This course

is also available to customers on-site, upon request. The six-week

Level 3 course, which covers maintenance adjustments, repair and

replacement, and general diagnostics, is targeted to maintenance

engineers and technicians. Participants receive extensive hands-on

practical exposure, performing advanced maintenance procedures

and calibrations, running software, replacing spare parts, and

mastering machine set-up sequences and system diagnostics.

(See figure 2.)

ASML’s customer commitment is evident in every aspect of

training. Training takes place in ASML’s four training centers, all

of which provide students with the opportunity to work hands-

on with full-scale, leading-edge ASML systems in a faithful fab

environment, fully preparing engineers for all aspects of system

support in the field. Each one of these established, dedicated

facilities, unmatched by any training centers in the industry, is

entirely equipped with state-of-the-art systems, and all courses are

delivered by experienced, certified technical instructors. As much

as eighty percent of the course content consists of unique hands-

on learning, often considered the most beneficial learning method

available. Hands-on experience, combined with the unparalleled

facilities, and the fact that class sizes are limited, guarantees each

student maximum system exposure and value from the training

experience.

Training is typically delivered in English, or in the local language

at each of ASML’s training centers, while on-site training courses

are delivered in the customer’s local language. Whether training is

taking place at the training center in the Netherlands, Taiwan, Korea,

or the U.S., Murray points out that “ASML’s Worldwide Training

Organization has a highly flexible team that can always overcome

any barriers language brings to the learning environment.”

Customer Focus

• Wide range of training options: - Virtual classroom e-learning - Interactive multimedia computer based training - Hands-on practical training

• Performance based instruction

• Full-scale systems in a fab environment

• Regional Facilities: The Netherlands, Taiwan, Korea, United States

Figure 2

Level Description Length

Level 0 (L0) Prerequisite Training, Orientation, Safety, Contamination

Level 1 (L1) Computer Based Training

System Introduction Self-paced

Level 1* (L1) Customer Introduction and Operations

2 days

Level 2 (L2) Preventitive Maintenance 2 weeks

Level 3 (L3) General Diagnostics, Layout, Airmounts, Sensors

Wafer and Reticle Handler

Wafer and Reticle Stage

Illumination and Projection

Advanced Alignment

Metrology

1 week

1 week

1 week

1 week

1 week

1 week

Validation Skill Certification in the Field

*L1 Introduction and Operations for customers only

Available Courses

Level 0 Level 2 Validation

Level 1 Level 3

ASML Images Summer 2003 19 18 ASML Images Summer 2003

3DAlign™, an optical front-to-back alignment technology, allows ASML’s

production-proven lithography steppers to provide fully automated,

high-throughput, double-sided processing of MEMS devices.

The 3DAlign option also enables high accuracy, back-to-back and mixed front/back

alignment for power, discrete and compound chip manufacturers.

This capability solves process-induced challenges such as CMP lapped

marks, epi shift for thick epi layers and noisy signals from grainy metal.

ASML’s commitment to special applications solutions is making the

world’s best ideas fly. See 3DAlign in action at www.asml.com/3DAlign.

extended portfolio

The new PAS 5500/350C stepper system, the

successor to the PAS 5500/300, is good news for

users seeking resolution and image improvements over

former stepper capabilities. The PAS 5500/350C is a

Deep UltraViolet (DUV) stepper for 0.18-µm applications

and beyond. The /350C’s 10-W KrF laser and AERIAL

illuminator enable high productivity for all applications.

The new system also provides an ideal mix-and-match

solution for i-line stepper fabs seeking to advance their

process capabilities.

DUV Stepper Enables Process Advances

The most advanced lithography processes employ DUV step-

and-scan systems. However, DUV steppers continue to fill an

important role in more mature fabs that wish to advance from i-line

to DUV. For example, many silicon and compound IC applications

that, until now, have used i-line steppers are migrating to processes

or technology nodes that require DUV imaging. While their

resolution requirements are moving into DUV territory, they still want

to continue to use their existing i-line steppers for the less critical

layers. For these users, the PAS 5500/350C provides DUV imaging

that is much more cost efficient than the more complex and more

expensive step-and-scan technology. Because it operates well in

mixed i-line and DUV stepper environments, the /350C provides

these users with an optimum mix-and-match solution.

Significant Resolution and Overlay Improvements

While the /350C delivers the same high throughput as the

/300C, the new stepper offers significant imaging and overlay

improvements over the /300C. The imaging improvements were

achieved by optimizing the adjustment of the lens, resulting in

better lens performance. In addition, the /350C’s improved critical

dimension (CD) performance results in resolution improvements

from 0.25 µm in the /300C down to 0.18 µm and beyond in

the /350C.

Along with the enhanced resolution of the new stepper comes

an improvement in the overlay performance. While an Improved

Overlay for Stepper (IOSt) package was an option for the /300,

it is now a standard feature of the /350C. The IOSt package is

a phase-modulated alignment system, which greatly enhances

overlay. Without the IOSt option, the /300 produced an overlay of

45 nm, versus the impressive 25 nm delivered by the /350C.

Enabling 0.18-µm technology in high-volume production, the

PAS 5500/350C fills an ever-increasing need as customers extend

their stepper infrastructure to DUV technology.

Value of Ownership

• Presents an important next step in the imaging improvement road map for /300 customers

• Shrinks CD to 0.18 µm and beyond

• Offers a significant overlay improvement

• Provides an ideal mix-and-match i-line stepper solution

ASML Extends its Portfolio with 0.18-µm DUV Stepperby Markus Hankeln

PAS 5500/350CKey Specifications

Lens

Numerical Aperture (NA): Variable 0.40-0.63

Resolution: ≤ 0.18 µm

Field Size

X & Y: 22 x 22 mm

Overlay

Two-point Global Alignment: ≤ 25 nm

Throughput

200-mm wafers, 70 shots, 30 mJ/cm2:

≥ 88 wph


WHEN ALIGNMENT IS CRITICAL TO PERFORMANCE

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