bandgap current reference source: fei4_a_cref fei4 collaboration. november 29, 2009. vladimir gromov...

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Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration . November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

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Page 1: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

Bandgap Current Reference source: FEI4_A_CREF

FEI4 collaboration . November 29, 2009.

Vladimir GromovNIKHEF, Amsterdam, the Netherlands

Page 2: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 229/11/09

The system requirements

22) The trim bits of the current reference will be modified to provide adjustment between nominal-30% and nominal+30%. Adjustment should only be possible in this narrow range. Setting the trim bits to 0 should not shut off the CREF, but simply set it to nominal-30%. 30% is not an exact requirement, could be 35% or 40% or 25% or something of that order.

An extract from the document called “ Minutes-nov-11.pdf”, distributed by Maurice Garcia-Sciveres by E-mail on November 11 2009 (19:25)

Subject: Re: CREFFrom: Abderrezak Mekkaoui <[email protected]>Date: Wed, 11 Nov 2009 10:18:06 -0800To: <[email protected]>, "ATLAS Pixel B-layer Replacement Electronics Replacement Electronics"<[email protected]>Hi Vladimir/Ruud,The nominal is whatever you think the "optimal" should be based on the design (2.7uAaccording to the last year simulations). If it is 2uA then no problem.The only thing is that tuning should be done around the nominal value (not from 0 tomax). ±1% (after tuning) would be very nice. ±5% acceptable.I hope this helps.Abderrezak

On 11/11/2009 7:10 AM, Ruud Kluit wrote:Hello Abderrezak,VladimirG is busy doing the IC5 > IC6 cerversion of the CREF.During a recent (14th Oct.) phone meeting you mentioned that 2uA is the value asdefaultfor the CREF output. The tuning should be made such that all process cornerscan be tuned back to 2uA. This is what Vladimir did now.During the review you said 2.7uA.....So, you should be aware that the design is now optimized for 2uA.Regards,Ruud.

Page 3: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 329/11/09

FE_I4_A_CREF block: symbol

Curre

nt

outp

ut

Analog VDD

Analog GND (floating P-well)

Substrate /Digital GND

( principal P-well)

This outputdeliver current in the range 2.7uA ± 30% 1.92uA…3.6uA. The value is set by the control bits RefD<0:3>

Control bits (set the value of the current at Iref_out node)

Page 4: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 429/11/09

FE_I4_A_CREF block: schematic

Optimal configuration has been chosen =

the lowest Temperature gradient

res_right = res1_5kand

Res750 = res370 = DTMOST_72

Page 5: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 529/11/09

The layout

Iref_out

Analog VDD

Analog GND (floating P-well)

Substrate /Digital GND ( principal P-well)

Control bits RefD <0:3>

164

um

204um

Page 6: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 629/11/09

The circuitVdd

Ib1

Ib2

Iref*= 26uAUb1

Ub2

Ub3

Ub1

R2 R2R1

<1:18> <1:72>

I2I1

T1 T2

Iref = I1+I2Iref Ref

D<

3>

Ref

D<

2>

Ref

D<

1>

Ref

D<

0>

Iref*/2 = 15uA Iref*/4 = 7uA Iref*/8 = 3uA

Iref_out= 1.92uA, …3.66uA

<5:1>

<6:1>

Dynamic-threshold MOS transistor (DTMOST)

Iref*= 52uA

Page 7: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 729/11/09

Curr_ref

The top cell ( FEI4_A_CREF ) internally has the following

configuration (found optimal in measurements)

res_right = res1_5kand

Res750 = res370 = DTMOST_72

Test bench A: schematicIref_out=2.7uA, when RefD=1000

Temperature gradient is NOT optimal in simulation, and

is well optimal according to the measurements

Page 8: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

The top cell ( FEI4_A_CREF ) internally has the following

configuration (found optimal in measurements)

res_right = res1_5kand

Res750 = res370 = DTMOST_72

Test bench A: temperature compensationIref_out=2.7uA, when RefD=1000

Temperature gradient is NOT optimal in simulation, and

is well optimal according to the measurements

FEI4 collaboration V.Gromov 829/11/09

Iref (Temp): simulations

PTAT (I2) CTAT (I1)

Currents

-40 -30 -20 -10 0 10 20 30 40

Temp, [C]

Iref (Temp): measurements

Page 9: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 929/11/09

Adjustment of the Iref_out

Iref_out = -1.935uARefD (1111)

Iref_out = -2.792uARefD (0111)

Iref_out = -3.274uARefD (0011)Iref_out = -3.504uA

RefD (0001)Iref_out = 3.6uARefD (0000)

Page 10: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 1

029/11/09

Stability of the Iref_outTemperature scans at Vdd=1.1V, 1.2V, 1.3V

RefD <1000>

Page 11: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 1

129/11/09

Iref_out as a function of output voltageVdd=1.2V and RefD <1000>

[dIref_out/Iref_out] / d[Vout] = - 0.6% /

V

Page 12: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

-2.8μA ± 0.4μA (± 15%)

FEI4 collaboration V.Gromov 1

229/11/09

Spread of the Iref_out: Mismatch + ProcessTemperature scans at Vdd= 1.2V

RefD <1000>

Page 13: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 1

329/11/09

Start-up of the circuit

Monte-Carlo simulations. Mismatch only. The worst case.fixed_cor_sw = 7Temp = -20°C

no start-up failures

Page 14: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 1

429/11/09

Test bench B

This configuration guarantees the lowest Temp gradient in

simulations and NOT in the measurements.

Iref_out=1.88uA, when RefD=1000Temperature gradient is optimal in simulation, and

is NOT optimal according to the measurements

Page 15: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

FEI4 collaboration V.Gromov 1

529/11/09

Lessons learned- when two adjustent cell have substrate connection RX+BP+CA+M1 (sub net) use SXCUT to run Assura LVS -do not use GRLOGIC as long as it masks GR110a (RX overlap past PC - silicide width) > 0.55u)- Use approapriate shapes when drawing PC in all gate around geometry. The cut must exclude corners<45°. Put an extra shape on it. -put more metal on VDD bus in order to avoid GR594 (For nets connected to NW contact, where the NW net isnot connected to a substrate contact defined by ((RX over BP) not over (NW or RN or BB or JD or PI or T3)), the ratio of [ (20*Mx area) + (Non-isolated p+ junction area ((((RXover BP) over NW) not over PC) not over T3)) ] / (union[NW,PI] area) where x=1,2,3,4,5,6.)

- Change size of the Bbox by editing rectangular in the layer chngLyr t0- use layer called LVS:drawing1 in order to define triple well NFETs (nfettw) devices in layout- Please re-attach IBM library properties* to match current metal stack (it is now set at "6-2" instead of "3-2" and another property is missing): use menu item CIW>IBM_PDK>Library>Add IBM_PDK Lib Properties. -In fact it does not work like this. You need to check out (from the repository) file called data.dm - There is a noConn cell that should probably point to 'basic' cadence library rather then to your own lib. - Several cellnames contain a '.' character, which is an issue in Calibre but only when checking those cells as top cells - so don't bother fixing this. - to run DRC check in Calibre:-setting: BEOL_STACK = 3_2_3, TECHDIR = /user/foundry/vlsi/IBM/cmos8sf/IBM_PDK/relDM/Calibre-BURN_IN=empty, CHECK_RECOMENDED=ON, DENSITY_LOCAL=ON, DESIGN_TYPE=CELL, EXT_LATCHUP =JEDEC78, IOTYPE=WB_INLINE-use the following runset /project/et/Atlas/Upgrade/InnerTracker/PixelDet/cadence/FE_I4_bandgap/vgromov_05_01_10.drc,- to run LVS check in Calibre:-Setting: COMPARE_NF_VALUES=FALSE, LASTMETAL=MA, MGPROCESS=MG, NO_SUBC_IN_GRLOGIC=TRUE, NO_TRACE_PROPERTY=FALSE, NUMMETAL=8, PEX_RUN=FALSE, PWELL_SUBC_DEVICE=FALSE, USE_RESISTANCE_MULTIPLIERS=TRUE.-use the following runset-/project/et/Atlas/Upgrade/InnerTracker/PixelDet/cadence/FE_I4_bandgap/lvs_gromov_06_01_10.runset-this runset generate all the netlist files when choose: Export from layout viewer=ON and Export from schematic viewer=ON

Page 16: Bandgap Current Reference source: FEI4_A_CREF FEI4 collaboration. November 29, 2009. Vladimir Gromov NIKHEF, Amsterdam, the Netherlands

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629/11/09

Lessons learned

-RULE FILE: /project/et/Atlas/Upgrade/InnerTracker/PixelDet/cadence/FE_I4_bandgap/CalibreLVS/_cmrf8sf.lvs.cal_-Check LVS setting in : /project/et/Atlas/Upgrade/InnerTracker/PixelDet/cadence/FE_I4_bandgap/example.lvs.report-When parallel MOST’s are not of the same size they will be seen as two different devices in layout and as one device in schematic. This causes LVS discrepancy. Put resistors (opndres_inh) in series with the gate connection in order to make two device in schematic too. This will solve the problem.- put two labels in sub.drw and SXCUT.lbl layer in order to stamp the substrate with nothing under Connectivity>Net name (assigns name sub! to substrate) -in schematic use nfet_inh devices when you want to give the name sub! to the substrate. - use subc component : put SUBCON net name on the net connected to SUBCON pin and inherited name on the net connected to the sub pin as follows:- Add Wire Name> Net Expression> Property Name = substrate and Default Net Name = sub! (then the global net sub! will be present in all the blocks and no dedicate pin is needed in schematic only)-Put a note on the symbol view to order to make it clear which cell is this (use Create>Note>Text> FontHeight=0.2, Font Style=roman

do not forget that the value of the output current will be 40% higher when you change the setting from res_right = res1_5k (optimal operational point in simulations) to

res_right = res1_5k + Res750 = res370 = DTMOST_72 (optimal point found in the measurements)Take it into account when you calculate the size ratio in the current mirrors.

if res_right = res1_5k then Iout_largest = 26.11uA in simulation and 30.3uA in the measurements if res_right = res1_5k + Res750 = res370 = DTMOST_72 then Iout_largest = 39.79uA in simulation

and 43.7uA in the measurements -